MMBT3904LP-7 Diodes Inc. Transistor BJT NPN (Other) In Stock
The MMBT3904LP-7 is a high-reliability NPN bipolar junction transistor from Diodes Inc. rated at 40 V collector-emitter voltage and 200 mA maximum collector current for general-purpose switching and amplification. It features a minimum DC current gain (hFE) of 30 and a 4 pF collector-base capacitance in a small surface-mount package. Available in stock with worldwide shipping for prototype and volume production.
- Manufacturer
- Diodes Inc.
- Package
- Other
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- MMBT3904LP-7 Datasheet PDF
- Category
- Transistor BJT NPN
- Temp Range
- -55.0°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 40 V VCEO and 200 mA IC ratings for general-purpose NPN switching and small-signal amplification in 12 V and 24 V circuits
- High-reliability (HR) screening for improved quality assurance in demanding consumer and industrial applications
- Low collector-base capacitance of 4 pF maximum enabling fast switching speeds for high-frequency signal applications
- Minimum DC current gain (hFE) of 30 with typical gain well above 100 at 10 mA for efficient base drive design
- Compact surface-mount package (SOT-363/SC-70) for space-efficient PCB layouts in portable and wearable electronics
Applications
The MMBT3904LP-7 is used as a general-purpose NPN switching transistor in LED driver circuits, relay driver stages, and logic-level signal buffers in embedded systems and consumer electronics. It is also applied as a small-signal amplifier in audio preamplifier stages, sensor signal conditioning, and low-frequency oscillator circuits operating below 100 MHz. The high-reliability screening and 40 V VCEO rating make it suitable for industrial control and telecommunications line interface circuits requiring consistent transistor performance.
Specifications
| Pbfree Code | Yes |
| Factory Lead Time | 12Weeks |
| YTEOL | 6 |
| Additional Feature | HIGH RELIABILITY |
| Case Connection | COLLECTOR |
| Collector Current-Max (IC) | 0.2A |
| Collector-Base Capacitance-Max | 4pF |
| Collector-Emitter Voltage-Max | 40V |
| Configuration | SINGLE |
| DC Current Gain-Min (hFE) | 30 |
| JESD-30 Code | R-PBCC-N3 |
| JESD-609 Code | e4 |
| Number of Elements | 1 |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | CHIP CARRIER |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | NPN |
| Power Dissipation Ambient-Max | 1W |
| Power Dissipation-Max (Abs) | 1W |
| Qualification Status | Not Qualified |
| Surface Mount | YES |
| Terminal Finish | NICKEL PALLADIUM GOLD |
| Terminal Form | NO LEAD |
| Terminal Position | BOTTOM |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Transistor Element Material | SILICON |
| Transition Frequency-Nom (fT) | 300MHz |
| Turn-off Time-Max (toff) | 250ns |
| Turn-on Time-Max (ton) | 70ns |
| VCEsat-Max | 0.3V |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 1 |
| ECCN | EAR99 |
| HTS Code | 8541.29.00.75 |
| Country of Origin | Mainland China |
Alternate & Equivalent Parts
Compatible alternatives and drop-in replacements for MMBT3904LP-7:
suggested
suggested
suggested
suggested
suggested
Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon
Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon
Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
Frequently Asked Questions
What are the maximum collector-emitter voltage and current ratings of MMBT3904LP-7?
MMBT3904LP-7 is rated for a maximum collector-emitter voltage (VCEO) of 40 V and a maximum collector current (IC) of 200 mA. These ratings make it suitable for switching loads up to 40 V in relay driver, LED indicator, and logic-level switching circuits drawing less than 200 mA.
How does the 4 pF collector-base capacitance of MMBT3904LP-7 affect its switching speed?
The low collector-base capacitance (Ccb) of 4 pF maximum in MMBT3904LP-7 minimizes the Miller effect and results in fast turn-on and turn-off times, typically below 35 ns for the 2N3904 family. This enables use in switching applications up to several megahertz, including PWM fan control circuits and high-speed digital logic drivers.
What does the LP suffix indicate about the MMBT3904LP-7's package compared to standard MMBT3904?
The LP suffix in MMBT3904LP-7 indicates the low-profile or small-outline SOT-363 (SC-70) package variant from Diodes Inc., featuring a body size of approximately 2.0 mm × 1.25 mm with 6 leads on 0.65 mm pitch. This is more compact than the standard SOT-23 MMBT3904 (2.9 mm × 1.3 mm), saving significant board space in dense portable and wearable device layouts.
What minimum DC current gain (hFE) does MMBT3904LP-7 provide and how does this influence base resistor selection?
MMBT3904LP-7 guarantees a minimum hFE of 30 at IC = 10 mA, with typical values ranging from 100 to 300 across the operating current range. When driving a 100 mA load from a 3.3 V GPIO with a target hFE of 30, the maximum required base current is approximately 3.3 mA, setting the base resistor to about 820 Ω for saturation-mode switching with adequate drive margin.
Is MMBT3904LP-7 a suitable alternative to MMBT3904 in existing designs, and what must be verified?
MMBT3904LP-7 is electrically equivalent to the standard MMBT3904 with the same 40 V VCEO, 200 mA IC, and 60 V VCBO ratings, making it a drop-in electrical replacement. The key difference is the LP package footprint (SOT-363 vs. SOT-23), so designers must verify PCB land pattern compatibility and update the component footprint in the layout before substituting in existing designs.
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