STGB20H65DFB2Alternatives & Equivalent Parts
About STGB20H65DFB2
STGB20H65DFB2 is a Transistor IGBT component manufactured by STMicroelectronics. It comes in a Other package. Below you'll find known alternative and equivalent parts that can serve as replacements in your design.
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Specification Comparison
| Parameter | STGB20H65DFB2Source | STGB20H65FB2 |
|---|---|---|
| Manufacturer | STMicroelectronics | STMicroelectronics |
| Package Type | Other | Other |
| Pin Count | 3 | 3 |
| Temperature Range | -55.0°C ~ 175.0°C | -55.0°C ~ 175.0°C |
| Price | $1.2416 | $0.6221 |
| Stock | In Stock | In Stock |
| Lifecycle | OBSOLETE | ACTIVE |
| Electrical Parameters | ||
| Factory Lead Time | 15 Weeks | 15 Weeks |
| Date Of Intro | 2020-05-07 | 2020-05-25 |
| YTEOL | 0 | 5.82 |
| Case Connection | COLLECTOR | COLLECTOR |
| Collector Current-Max (IC) | 40 A | 40 A |
| Collector-Emitter Voltage-Max | 650 V | 650 V |
| Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE |
| Gate-Emitter Thr Voltage-Max | 7 V | 7 V |
| Gate-Emitter Voltage-Max | 20 V | 20 V |
| JEDEC-95 Code | TO-263AB | TO-263AB |
| JESD-30 Code | R-PSSO-G2 | R-PSSO-G2 |
| JESD-609 Code | e3 | — |
| Number of Elements | 1 | 1 |
| Package Body Material | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR | RECTANGULAR |
| Package Style | SMALL OUTLINE | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 245 | — |
| Polarity/Channel Type | N-CHANNEL | N-CHANNEL |
| Power Dissipation-Max (Abs) | 147 W | 147 W |
| Surface Mount | YES | YES |
| Terminal Finish | Matte Tin (Sn) - annealed | — |
| Terminal Form | GULL WING | GULL WING |
| Terminal Position | SINGLE | SINGLE |
| Transistor Application | POWER CONTROL | POWER CONTROL |
| Transistor Element Material | SILICON | SILICON |
| Turn-off Time-Nom (toff) | 178 ns | 178 ns |
| Turn-on Time-Nom (ton) | 26 ns | 26 ns |
| VCEsat-Max | 2.1 V | 2.1 V |
Cells highlighted in yellow indicate differing values across parts. Always verify with official datasheets before substitution.
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Get one quote covering this alternative for STGB20H65DFB2 — response within 24 hours.
Quick Links
Insulated Gate Bipolar Transistor, 40A I(C), 650V V(BR)CES, N-Channel, TO-263AB
Why Look for Alternatives?
Finding alternatives for STGB20H65DFB2 is essential for supply chain resilience. Component shortages, long lead times, and end-of-life notices can disrupt production schedules. Having verified alternative parts ensures your designs remain manufacturable.
When evaluating STGB20H65DFB2 replacements, consider key parameters such as package compatibility, electrical specifications, and operating temperature range. Our engineering team can help verify pin-to-pin compatibility for your specific application.
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FAQ
What is equivalent to STGB20H65DFB2?
Known equivalents for STGB20H65DFB2 include STGB20H65FB2. Contact FindMyChip for a full compatibility analysis for your specific application.
Can I use a different manufacturer's part instead of STGB20H65DFB2?
In many cases, yes. Cross-manufacturer alternatives exist for most standard components. However, always verify pin compatibility, electrical specs, and package dimensions before substituting in production.
How do I verify STGB20H65DFB2 alternatives?
Compare the datasheet specifications including pinout, voltage ratings, timing parameters, and package dimensions. FindMyChip's engineering team can help with compatibility verification — submit an RFQ to get started.