Transistor BJT PNP

TO-3, 2 PIN

ON Semiconductor CPH3105-TL-E is a transistor bjt pnp for electronic assemblies and production BOM sourcing. Key specs include 3 positions, CPH3 based on the available part data. From $0 inquire online for sourced stock and worldwide shipping support.

BDX54CG is a PNP Darlington bipolar power transistor from ON Semiconductor rated at 100 V collector-emitter voltage, 8 A collector current, and 65 W power dissipation with a minimum hFE of 750. It includes an integrated freewheeling diode and base resistors in a TO-221 package.

Last Shipments - 4.0 A, 60 V PNP Darlington Bipolar Power Transistor

ROHS COMPLIANT, PLASTIC, CASE 77-09, TO-225, 3 PIN

DPAK-3/2

Obsolete - Power 8A 80V Darlington PNP

Obsolete - 20 A, 80 V PNP Darlington Bipolar Power Transistor

Obsolete - 7.0 A, 30 V PNP Bipolar Power Transistor

Low Saturation Voltage - VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Amp; Excellent Power Dissipation - PD = 30 W @ TC = 25°C; Excellent Safe Operating Area; Gain Specified to IC = 1.0 Amp; Complement to NPN 2N4921, 2N4922, 2N4923; Pb-Free Package is Available

Collector-Emitter Sustaining Voltage VCEO(sus) = 250 Vdc (Min) MJE15032, MJE15033; High Current Gain Bandwidth Product fT = 30 MHz (Min) @ IC = 500 mAdc; DC Current Gain Specified to 5.0 Amperes hFE = 50 (Min) @ IC = 0.5 Adc hFE = 10 (Min) @ IC = 2.0 Adc; TO-220AB Compact Package; Pb-Free Packages are Available*

High Safe Operating Area (100% Tested) - 2 A @ 80 V; High DC Current Gain - hFE = 15 (Min) @ IC = 8 Adc

DC Current Gain Specified to 4.0 Amperes hFE = 40 (Min) @ IC = 3.0 Adc hFE = 20 (Min) @ IC = 4.0 Adc; TO-220AB Compact Package; Collector-Emitter Sustaining Voltage - VCEO(sus) = 120 Vdc (Min) MJE15028, MJE15029 VCEO(sus) = 150 Vdc (Min) - MJE15030, MJE15031; High Current Gain - Bandwidth Product fT = 30 MHz (Min) @ IC = 500 mAdc; Pb-Free Packages are Available

TO-226AA, 3 PIN

PMMT591A, PNP Bipolar Transistor, 1 A 40 V HFE:160 150 MHz Small Signal, 3-Pin TO-236AB

Bipolar Transistors - BJT BC806-25H/SOT23/TO-236AB

Bipolar Transistors - BJT . . SURFACE MOUNT SILICON PNP TRANSISTOR

BFT93 is a 5GHz 3-Pin capacitor by NXP. Key specs: 5GHz, 3-Pin, 0A. From quote-based pricing, in stock with worldwide shipping for production sourcing for production BOM sourcing.

Bipolar Transistors - BJT BIPOLAR SMALL SIGNAL

SC-70, 3 PIN

ON Semiconductor PNP/2A/60V TO-126

STMicroelectronics 2N5154ESYHRG is a radiation-hardened NPN bipolar junction transistor rated at 80 V collector-emitter and 5 A collector current, designed for high-reliability aerospace and space applications. It delivers a minimum DC current gain of 40 in a TO-257 package.

Rad-Hard 80 V, 5 A PNP bipolar transistor

2N5153ESYHRG is a STMicroelectronics transistor bjt pnp for industrial electronics and embedded systems. It combines 3 pins, Transistor Outline, Vertical, 80 V for reliable board-level integration. Quote-based sourcing supports stock checks and worldwide shipping.

The 2N5153RESYHRT is a radiation-hardened PNP bipolar junction transistor rated to 80 V collector-emitter voltage and 5 A continuous collector current, designed for space and high-reliability applications. It is packaged in a hermetic TO-39 metal can and qualified for use in harsh radiation environments. Available for defense, aerospace, and space-grade procurement worldwide.

Use the download button to access the 2N2904 schematic symbol and PCB footprint.

STMicroelectronics 2N2907AHR is a radiation-hardened PNP bipolar transistor rated at 60 V collector-emitter voltage and 600 mA collector current, designed for space and high-reliability applications. Housed in a hermetic TO-18 metal can package with an operating range of -65 degrees C to +200 degrees C.

BD908 is a PNP power transistor by STMicroelectronics in a TO-220 package, rated for 60 V collector-emitter voltage and 15 A continuous collector current. Key specs: 60 V VCEO, 15 A IC, 75 W power dissipation. From $0.30, in stock with worldwide shipping.

Bipolar Transistors - BJT BJTs

Bipolar Transistors - BJT Power BJT

Microchip JAN2N2907A is a JAN-qualified PNP small-signal silicon BJT transistor rated at 600 mA and 60 V. It operates across -65°C to +200°C temperature range for military and aerospace use. Available with 22-week lead time and worldwide shipping.

Bipolar Transistors - BJT

ROHS COMPLIANT, TO-220, 3 PIN

LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS silicon Planar Epitaxial PNP transistors in TO-18 metal case

PNP transistor,BC177 0.1A,BP

Trans GP BJT PNP 80V 10A 36000mW 3-Pin(3+Tab) TO-220FP Tube

PNP power Darlington transistor

The BC161 is a PNP general-purpose bipolar junction transistor rated at 60 V collector-emitter voltage and 1 A collector current with a minimum DC current gain of 40, suitable for switching and amplifier circuits. Available from stock worldwide with fast shipping.

STMicroelectronics BD536 is a PNP bipolar junction transistor rated at 60 V collector-emitter voltage and 8 A continuous collector current in a TO-220AB through-hole package. It delivers a minimum DC current gain of 15 for power switching and audio amplifier applications. Available from stock worldwide with fast shipping.

BIPOLAR TRANSISTOR, PNP -60V TO-220; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency ft:3MHz; Power Dissipation Pd:75W; DC Collector Current:-12A; DC Current Gain hFE:120hFE; No. of Pins:3Pins RoHS Compliant: Yes

Low voltage fast-switching PNP power transistor VCBO -60V IC -5A, DPAK (TO-252)

STMicroelectronics BD244C PNP Bipolar Transistor, 6 A, 100 V, 3-Pin TO-220

STMicroelectronics STX93003 is a single PNP bipolar junction transistor (BJT) with 400-V collector-emitter voltage, 1-A maximum collector current, and minimum DC current gain (hFE) of 4. Housed in a compact through-hole TO-92 package for general-purpose high-voltage switching. Available in stock with worldwide shipping.

TIP42A,Transistor,BJT PNP 60V 6A,TO220-3 STMicroelectronics TIP42A PNP Bipolar Transistor, 6 A, 60 V, 3-Pin TO-220

Bipolar Junction Transistor, PNP Type, TO-18

Use the download button to access the STR2550 schematic symbol, PCB footprint, and 3D model.

TIP2955, PNP Bipolar Transistor, 15 A 60 V HFE:5 3 MHz Power, 3-Pin TO-247

TIP115 is a PNP Darlington power transistor from STMicroelectronics in a TO-220 package, rated for 2 A collector current, 60 V collector-emitter voltage, and a minimum current gain (hFE) of 500, ideal for motor drivers, relay drivers, and power switching applications.

TIP147T, Darlington Transistor, PNP 10 A 100 V HFE:500, 3-Pin, TO-220

TIP36C, PNP Bipolar Transistor, 25 A 100 V HFE:10 3 MHz Power, 3-Pin TO-247