2N5154ESYHRG STMicroelectronics Transistor BJT PNP (Transistor Outline, Vertical) In Stock
STMicroelectronics 2N5154ESYHRG is a radiation-hardened NPN bipolar junction transistor rated at 80 V collector-emitter and 5 A collector current, designed for high-reliability aerospace and space applications. It delivers a minimum DC current gain of 40 in a TO-257 package.
- Manufacturer
- STMicroelectronics
- Package
- Transistor Outline, Vertical
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- 2N5154ESYHRG Datasheet PDF
- Category
- Transistor BJT PNP
- Temp Range
- -65.0°C to 200.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- Radiation-hardened design for space and high-reliability aerospace use
- 80 V collector-emitter voltage (VCEO) for robust switching margins
- 5 A maximum collector current for medium-power switching
- Minimum DC current gain (hFE) of 40 for predictable drive requirements
- Low collector-base capacitance of 250 pF for fast switching
- Single NPN element in TO-257 vertical package for thermal management
Applications
The 2N5154ESYHRG is primarily used in satellite power management, spacecraft onboard electronics, and radiation-tolerant power switching circuits where long mission life and resistance to total ionizing dose are mandatory. It also finds application in military avionics and ground-based high-reliability systems requiring MIL-grade NPN switching transistors.
Specifications
| YTEOL | 4 |
| Additional Feature | HIGH RELIABILITY |
| Collector Current-Max (IC) | 5A |
| Collector-Base Capacitance-Max | 250pF |
| Collector-Emitter Voltage-Max | 80V |
| Configuration | SINGLE |
| DC Current Gain-Min (hFE) | 40 |
| JEDEC-95 Code | TO-257 |
| JESD-30 Code | R-XSFM-P3 |
| Number of Elements | 1 |
| Package Body Material | UNSPECIFIED |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Polarity/Channel Type | NPN |
| Power Dissipation Ambient-Max | 3.3W |
| Power Dissipation-Max (Abs) | 35W |
| Reference Standard | EUROPEAN SPACE AGENCY |
| Surface Mount | NO |
| Terminal Form | PIN/PEG |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Turn-off Time-Max (toff) | 1300ns |
| Turn-on Time-Max (ton) | 500ns |
| VCEsat-Max | 1.5V |
| Package | Transistor Outline, Vertical |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| HTS Code | 8541.29.00.95 |
| Country of Origin | France |
Alternate & Equivalent Parts
Compatible alternatives and drop-in replacements for 2N5154ESYHRG:
Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-257, 3 Pin
Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-257, 3 Pin
Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-257
Frequently Asked Questions
What radiation tolerance level does 2N5154ESYHRG provide for satellite power supply designs?
The 2N5154ESYHRG is qualified as a radiation-hardened device offering high-reliability performance in space environments. Its 80 V, 5 A NPN structure is specifically designed to maintain DC current gain above 40 after exposure to total ionizing dose typical of low-earth-orbit missions.
How does the 250 pF collector-base capacitance of 2N5154ESYHRG affect switching speed in a DC-DC converter?
A collector-base capacitance of 250 pF contributes to Miller charging delays during turn-on and turn-off transitions. Designers should budget sufficient base drive current and minimize parasitic inductance in the 80 V, 5 A switching loop to achieve acceptable switching efficiency.
Which package standard does 2N5154ESYHRG use, and what mounting options does it offer for thermal management?
The 2N5154ESYHRG uses the TO-257 vertical package (JEDEC-95 code TO-257), which provides a metal flange for direct heat-sinking to a chassis or cold plate. This is critical when operating near the 5 A collector current limit in confined spacecraft electronics enclosures.
When should engineers consider 2N5154ESYHRG over commercial-grade NPN transistors for a new design?
Engineers should select 2N5154ESYHRG whenever the application demands verified radiation hardness, high-reliability screening, and guaranteed hFE greater than 40 at 5 A. Commercial-grade parts with similar 80 V ratings lack the radiation qualification and traceability needed for defense or space flight hardware.
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