Transistor BJT PNP

Transistor BJT PNP components are essential building blocks in modern electronic systems. FindMyChip sources Transistor BJT PNP ICs from authorized China distributors with competitive pricing and reliable stock.

162 components

How to Choose Transistor BJT PNP Components

  • 1Verify electrical specifications (voltage, current, frequency) match your design requirements.
  • 2Check package footprint and thermal characteristics against your PCB layout constraints.
  • 3Confirm lifecycle status and long-term availability for production designs.

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All Transistor BJT PNP Components

Showing 101150 of 162

BDX54CGON Semiconductor

BDX54CG is a PNP Darlington bipolar power transistor from ON Semiconductor rated at 100 V collector-emitter voltage, 8 A collector current, and 65 W power dissipation with a minimum hFE of 750. It includes an integrated freewheeling diode and base resistors in a TO-221 package.

BD678AGON Semiconductor

Last Shipments - 4.0 A, 60 V PNP Darlington Bipolar Power Transistor

BD180GON Semiconductor

ROHS COMPLIANT, PLASTIC, CASE 77-09, TO-225, 3 PIN

2SB1203S-TL-EON Semiconductor

DPAK-3/2

2N6667GON Semiconductor

Obsolete - Power 8A 80V Darlington PNP

2N6111GON Semiconductor

Obsolete - 20 A, 80 V PNP Darlington Bipolar Power Transistor

2N6109GON Semiconductor

Obsolete - 7.0 A, 30 V PNP Bipolar Power Transistor

2N4920GON Semiconductor

Low Saturation Voltage - VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Amp; Excellent Power Dissipation - PD = 30 W @ TC = 25°C; Excellent Safe Operating Area; Gain Specified to IC = 1.0 Amp; Complement to NPN 2N4921, 2N4922, 2N4923; Pb-Free Package is Available

MJE15033GON Semiconductor

Collector-Emitter Sustaining Voltage VCEO(sus) = 250 Vdc (Min) MJE15032, MJE15033; High Current Gain Bandwidth Product fT = 30 MHz (Min) @ IC = 500 mAdc; DC Current Gain Specified to 5.0 Amperes hFE = 50 (Min) @ IC = 0.5 Adc hFE = 10 (Min) @ IC = 2.0 Adc; TO-220AB Compact Package; Pb-Free Packages are Available*

MJ15025GON Semiconductor

High Safe Operating Area (100% Tested) - 2 A @ 80 V; High DC Current Gain - hFE = 15 (Min) @ IC = 8 Adc

MJE15031GON Semiconductor

DC Current Gain Specified to 4.0 Amperes hFE = 40 (Min) @ IC = 3.0 Adc hFE = 20 (Min) @ IC = 4.0 Adc; TO-220AB Compact Package; Collector-Emitter Sustaining Voltage - VCEO(sus) = 120 Vdc (Min) MJE15028, MJE15029 VCEO(sus) = 150 Vdc (Min) - MJE15030, MJE15031; High Current Gain - Bandwidth Product fT = 30 MHz (Min) @ IC = 500 mAdc; Pb-Free Packages are Available

BC560CGON Semiconductor

TO-226AA, 3 PIN

PMMT591ANexperia

PMMT591A, PNP Bipolar Transistor, 1 A 40 V HFE:160 150 MHz Small Signal, 3-Pin TO-236AB

BC806-25HVLNexperia

Bipolar Transistors - BJT BC806-25H/SOT23/TO-236AB

CZT5401 TR PBFREECentral Semiconductor

Bipolar Transistors - BJT . . SURFACE MOUNT SILICON PNP TRANSISTOR

2N2906WELWYN

Bipolar Transistors - BJT BIPOLAR SMALL SIGNAL

2SA2088U3T106ROHM Semiconductor

SC-70, 3 PIN

BD236ON Semiconductor

ON Semiconductor PNP/2A/60V TO-126

2N5154ESYHRGSTMicroelectronics

STMicroelectronics 2N5154ESYHRG is a radiation-hardened NPN bipolar junction transistor rated at 80 V collector-emitter and 5 A collector current, designed for high-reliability aerospace and space applications. It delivers a minimum DC current gain of 40 in a TO-257 package.

2N5153RESYHRGSTMicroelectronics

Rad-Hard 80 V, 5 A PNP bipolar transistor

2N5153ESYHRGSTMicroelectronics

2N5153ESYHRG is a STMicroelectronics transistor bjt pnp for industrial electronics and embedded systems. It combines 3 pins, Transistor Outline, Vertical, 80 V for reliable board-level integration. Quote-based sourcing supports stock checks and worldwide shipping.

2N5153RESYHRTSTMicroelectronics

The 2N5153RESYHRT is a radiation-hardened PNP bipolar junction transistor rated to 80 V collector-emitter voltage and 5 A continuous collector current, designed for space and high-reliability applications. It is packaged in a hermetic TO-39 metal can and qualified for use in harsh radiation environments. Available for defense, aerospace, and space-grade procurement worldwide.

2N2904Microchip

Use the download button to access the 2N2904 schematic symbol and PCB footprint.

2N2907AHRSTMicroelectronics

STMicroelectronics 2N2907AHR is a radiation-hardened PNP bipolar transistor rated at 60 V collector-emitter voltage and 600 mA collector current, designed for space and high-reliability applications. Housed in a hermetic TO-18 metal can package with an operating range of -65 degrees C to +200 degrees C.

BD908STMicroelectronics

BD908 is a PNP power transistor by STMicroelectronics in a TO-220 package, rated for 60 V collector-emitter voltage and 15 A continuous collector current. Key specs: 60 V VCEO, 15 A IC, 75 W power dissipation. From $0.30, in stock with worldwide shipping.

2N4029Microchip

Bipolar Transistors - BJT BJTs

JANTX2N5153Microchip

Bipolar Transistors - BJT Power BJT

JAN2N2907AMicrochip

Microchip JAN2N2907A is a JAN-qualified PNP small-signal silicon BJT transistor rated at 600 mA and 60 V. It operates across -65°C to +200°C temperature range for military and aerospace use. Available with 22-week lead time and worldwide shipping.

JANTX2N4957/TRMicrochip

Bipolar Transistors - BJT

BD534STMicroelectronics

ROHS COMPLIANT, TO-220, 3 PIN

BC177BSTMicroelectronics

LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS silicon Planar Epitaxial PNP transistors in TO-18 metal case

BC177STMicroelectronics

PNP transistor,BC177 0.1A,BP

D45H11FPSTMicroelectronics

Trans GP BJT PNP 80V 10A 36000mW 3-Pin(3+Tab) TO-220FP Tube

2STW200STMicroelectronics

PNP power Darlington transistor

BC161STMicroelectronics

The BC161 is a PNP general-purpose bipolar junction transistor rated at 60 V collector-emitter voltage and 1 A collector current with a minimum DC current gain of 40, suitable for switching and amplifier circuits. Available from stock worldwide with fast shipping.

BD536STMicroelectronics

STMicroelectronics BD536 is a PNP bipolar junction transistor rated at 60 V collector-emitter voltage and 8 A continuous collector current in a TO-220AB through-hole package. It delivers a minimum DC current gain of 15 for power switching and audio amplifier applications. Available from stock worldwide with fast shipping.

BD708STMicroelectronics

BIPOLAR TRANSISTOR, PNP -60V TO-220; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency ft:3MHz; Power Dissipation Pd:75W; DC Collector Current:-12A; DC Current Gain hFE:120hFE; No. of Pins:3Pins RoHS Compliant: Yes

STD2805T4STMicroelectronics

Low voltage fast-switching PNP power transistor VCBO -60V IC -5A, DPAK (TO-252)

BD244CSTMicroelectronics

STMicroelectronics BD244C PNP Bipolar Transistor, 6 A, 100 V, 3-Pin TO-220

STX93003STMicroelectronics

STMicroelectronics STX93003 is a single PNP bipolar junction transistor (BJT) with 400-V collector-emitter voltage, 1-A maximum collector current, and minimum DC current gain (hFE) of 4. Housed in a compact through-hole TO-92 package for general-purpose high-voltage switching. Available in stock with worldwide shipping.

TIP42ASTMicroelectronics

TIP42A,Transistor,BJT PNP 60V 6A,TO220-3 STMicroelectronics TIP42A PNP Bipolar Transistor, 6 A, 60 V, 3-Pin TO-220

2N2907ASTMicroelectronics

Bipolar Junction Transistor, PNP Type, TO-18

STR2550STMicroelectronics

Use the download button to access the STR2550 schematic symbol, PCB footprint, and 3D model.

TIP2955STMicroelectronics

TIP2955, PNP Bipolar Transistor, 15 A 60 V HFE:5 3 MHz Power, 3-Pin TO-247

TIP115STMicroelectronics

TIP115, Darlington Transistor, PNP 2 A 60 V HFE:500, 3-Pin, TO-220

TIP147TSTMicroelectronics

TIP147T, Darlington Transistor, PNP 10 A 100 V HFE:500, 3-Pin, TO-220

TIP36CSTMicroelectronics

TIP36C, PNP Bipolar Transistor, 25 A 100 V HFE:10 3 MHz Power, 3-Pin TO-247

TIP125STMicroelectronics

TIP125, Darlington Transistor, PNP 5 A 60 V HFE:1000, 3-Pin, TO-220

TIP117STMicroelectronics

Darlington PNP 100V 2A TO220

TIP137STMicroelectronics

Trans Darlington PNP 100V 8A TO220 STMicroelectronics TIP137 PNP Darlington Transistor, 8 A 100 V HFE:500, 3-Pin TO-220

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