Transistor BJT PNP
Transistor BJT PNP components are essential building blocks in modern electronic systems. FindMyChip sources Transistor BJT PNP ICs from authorized China distributors with competitive pricing and reliable stock.
162 components
How to Choose Transistor BJT PNP Components
- 1Verify electrical specifications (voltage, current, frequency) match your design requirements.
- 2Check package footprint and thermal characteristics against your PCB layout constraints.
- 3Confirm lifecycle status and long-term availability for production designs.
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Transistor BJT PNP Guides & Articles
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All Transistor BJT PNP Components
Showing 101–150 of 162
BDX54CG is a PNP Darlington bipolar power transistor from ON Semiconductor rated at 100 V collector-emitter voltage, 8 A collector current, and 65 W power dissipation with a minimum hFE of 750. It includes an integrated freewheeling diode and base resistors in a TO-221 package.
Last Shipments - 4.0 A, 60 V PNP Darlington Bipolar Power Transistor
ROHS COMPLIANT, PLASTIC, CASE 77-09, TO-225, 3 PIN
DPAK-3/2
Obsolete - Power 8A 80V Darlington PNP
Obsolete - 20 A, 80 V PNP Darlington Bipolar Power Transistor
Obsolete - 7.0 A, 30 V PNP Bipolar Power Transistor
Low Saturation Voltage - VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Amp; Excellent Power Dissipation - PD = 30 W @ TC = 25°C; Excellent Safe Operating Area; Gain Specified to IC = 1.0 Amp; Complement to NPN 2N4921, 2N4922, 2N4923; Pb-Free Package is Available
Collector-Emitter Sustaining Voltage VCEO(sus) = 250 Vdc (Min) MJE15032, MJE15033; High Current Gain Bandwidth Product fT = 30 MHz (Min) @ IC = 500 mAdc; DC Current Gain Specified to 5.0 Amperes hFE = 50 (Min) @ IC = 0.5 Adc hFE = 10 (Min) @ IC = 2.0 Adc; TO-220AB Compact Package; Pb-Free Packages are Available*
High Safe Operating Area (100% Tested) - 2 A @ 80 V; High DC Current Gain - hFE = 15 (Min) @ IC = 8 Adc
DC Current Gain Specified to 4.0 Amperes hFE = 40 (Min) @ IC = 3.0 Adc hFE = 20 (Min) @ IC = 4.0 Adc; TO-220AB Compact Package; Collector-Emitter Sustaining Voltage - VCEO(sus) = 120 Vdc (Min) MJE15028, MJE15029 VCEO(sus) = 150 Vdc (Min) - MJE15030, MJE15031; High Current Gain - Bandwidth Product fT = 30 MHz (Min) @ IC = 500 mAdc; Pb-Free Packages are Available
TO-226AA, 3 PIN
PMMT591A, PNP Bipolar Transistor, 1 A 40 V HFE:160 150 MHz Small Signal, 3-Pin TO-236AB
Bipolar Transistors - BJT BC806-25H/SOT23/TO-236AB
Bipolar Transistors - BJT . . SURFACE MOUNT SILICON PNP TRANSISTOR
Bipolar Transistors - BJT BIPOLAR SMALL SIGNAL
SC-70, 3 PIN
ON Semiconductor PNP/2A/60V TO-126
STMicroelectronics 2N5154ESYHRG is a radiation-hardened NPN bipolar junction transistor rated at 80 V collector-emitter and 5 A collector current, designed for high-reliability aerospace and space applications. It delivers a minimum DC current gain of 40 in a TO-257 package.
Rad-Hard 80 V, 5 A PNP bipolar transistor
2N5153ESYHRG is a STMicroelectronics transistor bjt pnp for industrial electronics and embedded systems. It combines 3 pins, Transistor Outline, Vertical, 80 V for reliable board-level integration. Quote-based sourcing supports stock checks and worldwide shipping.
The 2N5153RESYHRT is a radiation-hardened PNP bipolar junction transistor rated to 80 V collector-emitter voltage and 5 A continuous collector current, designed for space and high-reliability applications. It is packaged in a hermetic TO-39 metal can and qualified for use in harsh radiation environments. Available for defense, aerospace, and space-grade procurement worldwide.
Use the download button to access the 2N2904 schematic symbol and PCB footprint.
STMicroelectronics 2N2907AHR is a radiation-hardened PNP bipolar transistor rated at 60 V collector-emitter voltage and 600 mA collector current, designed for space and high-reliability applications. Housed in a hermetic TO-18 metal can package with an operating range of -65 degrees C to +200 degrees C.
BD908 is a PNP power transistor by STMicroelectronics in a TO-220 package, rated for 60 V collector-emitter voltage and 15 A continuous collector current. Key specs: 60 V VCEO, 15 A IC, 75 W power dissipation. From $0.30, in stock with worldwide shipping.
Bipolar Transistors - BJT BJTs
Bipolar Transistors - BJT Power BJT
Microchip JAN2N2907A is a JAN-qualified PNP small-signal silicon BJT transistor rated at 600 mA and 60 V. It operates across -65°C to +200°C temperature range for military and aerospace use. Available with 22-week lead time and worldwide shipping.
Bipolar Transistors - BJT
ROHS COMPLIANT, TO-220, 3 PIN
LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS silicon Planar Epitaxial PNP transistors in TO-18 metal case
PNP transistor,BC177 0.1A,BP
Trans GP BJT PNP 80V 10A 36000mW 3-Pin(3+Tab) TO-220FP Tube
PNP power Darlington transistor
The BC161 is a PNP general-purpose bipolar junction transistor rated at 60 V collector-emitter voltage and 1 A collector current with a minimum DC current gain of 40, suitable for switching and amplifier circuits. Available from stock worldwide with fast shipping.
STMicroelectronics BD536 is a PNP bipolar junction transistor rated at 60 V collector-emitter voltage and 8 A continuous collector current in a TO-220AB through-hole package. It delivers a minimum DC current gain of 15 for power switching and audio amplifier applications. Available from stock worldwide with fast shipping.
BIPOLAR TRANSISTOR, PNP -60V TO-220; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency ft:3MHz; Power Dissipation Pd:75W; DC Collector Current:-12A; DC Current Gain hFE:120hFE; No. of Pins:3Pins RoHS Compliant: Yes
Low voltage fast-switching PNP power transistor VCBO -60V IC -5A, DPAK (TO-252)
STMicroelectronics BD244C PNP Bipolar Transistor, 6 A, 100 V, 3-Pin TO-220
STMicroelectronics STX93003 is a single PNP bipolar junction transistor (BJT) with 400-V collector-emitter voltage, 1-A maximum collector current, and minimum DC current gain (hFE) of 4. Housed in a compact through-hole TO-92 package for general-purpose high-voltage switching. Available in stock with worldwide shipping.
TIP42A,Transistor,BJT PNP 60V 6A,TO220-3 STMicroelectronics TIP42A PNP Bipolar Transistor, 6 A, 60 V, 3-Pin TO-220
Bipolar Junction Transistor, PNP Type, TO-18
Use the download button to access the STR2550 schematic symbol, PCB footprint, and 3D model.
TIP2955, PNP Bipolar Transistor, 15 A 60 V HFE:5 3 MHz Power, 3-Pin TO-247
TIP115, Darlington Transistor, PNP 2 A 60 V HFE:500, 3-Pin, TO-220
TIP147T, Darlington Transistor, PNP 10 A 100 V HFE:500, 3-Pin, TO-220
TIP36C, PNP Bipolar Transistor, 25 A 100 V HFE:10 3 MHz Power, 3-Pin TO-247
TIP125, Darlington Transistor, PNP 5 A 60 V HFE:1000, 3-Pin, TO-220
Darlington PNP 100V 2A TO220
Trans Darlington PNP 100V 8A TO220 STMicroelectronics TIP137 PNP Darlington Transistor, 8 A 100 V HFE:500, 3-Pin TO-220
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