2N5153RESYHRT STMicroelectronics Transistor BJT PNP (Transistor Outline, Vertical) In Stock
The 2N5153RESYHRT is a radiation-hardened PNP bipolar junction transistor rated to 80 V collector-emitter voltage and 5 A continuous collector current, designed for space and high-reliability applications. It is packaged in a hermetic TO-39 metal can and qualified for use in harsh radiation environments. Available for defense, aerospace, and space-grade procurement worldwide.
- Manufacturer
- STMicroelectronics
- Package
- Transistor Outline, Vertical
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- 2N5153RESYHRT Datasheet PDF
- Category
- Transistor BJT PNP
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- Radiation-hardened construction for space and satellite applications
- 80 V collector-emitter breakdown voltage (BVCEO)
- 5 A continuous collector current capability
- Hermetic TO-39 metal can package for harsh environment sealing
- PNP polarity for complementary driver and switch configurations
- High-reliability screening suitable for MIL-PRF-19500 equivalent programs
Applications
The 2N5153RESYHRT is used in satellite power conditioning, spacecraft attitude control electronics, and radiation-hardened avionics where transistors must withstand total ionizing dose exposure without degradation. Its 80 V and 5 A ratings also suit high-reliability linear power supply pass stages, rad-hard relay drivers, and complementary output switch pairs in space-grade DC-DC converters.
Specifications
| YTEOL | 4 |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Package | Transistor Outline, Vertical |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | France |
Alternate & Equivalent Parts
Compatible alternatives and drop-in replacements for 2N5153RESYHRT:
Frequently Asked Questions
What are the voltage and current ratings of 2N5153RESYHRT and why do they matter in spacecraft power circuits?
The 2N5153RESYHRT is rated for 80 V collector-emitter voltage and 5 A continuous collector current, providing sufficient margin for satellite bus voltages typically between 28 V and 50 V. These ratings allow linear pass elements and switch drivers to handle load transients without entering breakdown in the radiation environment of low-Earth or geostationary orbit.
How does the radiation hardness of 2N5153RESYHRT compare to standard commercial PNP transistors?
Unlike commercial-grade BJTs, the 2N5153RESYHRT is processed and screened specifically for radiation tolerance, maintaining stable hFE and leakage current after total ionizing dose exposure exceeding 100 krad(Si) in many test programs. Standard transistors can suffer current gain degradation or increased ICBO leakage under similar radiation levels, making the rad-hard variant necessary for space missions lasting 5 or more years.
What hermetic package does 2N5153RESYHRT use and what sealing advantages does it offer?
The 2N5153RESYHRT is packaged in a TO-39 metal-can hermetic package, which provides a nitrogen or vacuum-sealed enclosure. This hermetic seal prevents outgassing and moisture ingress that could degrade transistor performance over the 10- to 20-year operational life expected from satellite electronics in vacuum and thermal cycling environments.
What procurement considerations apply when sourcing 2N5153RESYHRT for a space program?
Buyers should verify the radiation characterization data, date code traceability, and lot conformance test reports supplied with each shipment, as space-grade PNP BJTs like the 2N5153RESYHRT are typically procured against a Defense Logistics Agency or equivalent radiation-hardness-assurance flow. Lead times can exceed 12 weeks depending on the screening level and whether 5 A continuous-current test data accompanies the lot.
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About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
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