BD536 STMicroelectronics Transistor BJT PNP (Transistor Outline, Vertical) In Stock
STMicroelectronics BD536 is a PNP bipolar junction transistor rated at 60 V collector-emitter voltage and 8 A continuous collector current in a TO-220AB through-hole package. It delivers a minimum DC current gain of 15 for power switching and audio amplifier applications. Available from stock worldwide with fast shipping.
- Manufacturer
- STMicroelectronics
- Package
- Transistor Outline, Vertical
- Pin Count
- 3
- Lifecycle
- OBSOLETE
- Datasheet
- BD536 Datasheet PDF
- Category
- Transistor BJT PNP
- Temp Range
- ?°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of BD536?
- PNP power BJT with 60 V VCEO and 8 A collector current capacity for medium-power switching and linear amplification
- Minimum DC current gain (hFE) of 15 at high collector currents ensures reliable base drive from standard logic or MCU outputs
- TO-220AB package with bolt-down tab allows direct heatsink mounting for continuous 8 A operation without thermal runaway
What is BD536 used for?
The BD536 is used in audio power amplifier output stages, DC motor speed controllers, and linear power supply pass elements where a PNP transistor handling up to 8 A at 60 V is required. Its TO-220AB package bolts directly to chassis heatsinks, making it practical in off-road vehicle lighting controllers and industrial relay driver circuits. Complementary pairing with the BD535 NPN device enables push-pull Class AB audio output stages with symmetrical drive characteristics.
What are the specifications of BD536?
| Pbfree Code | Yes |
| Reach Compliance Code | Not Compliant |
| YTEOL | 0 |
| Collector Current-Max (IC) | 8A |
| Collector-Emitter Voltage-Max | 60V |
| Configuration | SINGLE |
| DC Current Gain-Min (hFE) | 15 |
| JEDEC-95 Code | TO-220AB |
| JESD-30 Code | R-PSFM-T3 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Polarity/Channel Type | PNP |
| Power Dissipation Ambient-Max | 50W |
| Power Dissipation-Max (Abs) | 50W |
| Qualification Status | Not Qualified |
| Surface Mount | NO |
| Terminal Finish | MATTE TIN |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Transition Frequency-Nom (fT) | 12MHz |
| VCEsat-Max | 0.8V |
| Package | Transistor Outline, Vertical |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| HTS Code | 8541.29.00.95 |
Where can I find the BD536 datasheet?
BD536 Datasheet DownloadOfficial datasheet from STMicroelectronics
What are equivalent replacements for BD536?
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What are the maximum collector-emitter voltage and continuous collector current ratings for the BD536?
The BD536 is rated for a maximum collector-emitter voltage (VCEO) of 60 V and a continuous collector current (IC) of 8 A. These ratings make it suitable for medium-power PNP applications such as 24 V or 48 V motor drive circuits where the transistor must handle sustained load currents without exceeding its safe operating area.
How does the BD536 perform in a complementary push-pull audio amplifier paired with a suitable NPN transistor?
In a complementary push-pull output stage, the BD536 PNP and a complementary NPN such as BD535 handle the negative and positive half-cycles respectively, each rated at 60 V and 8 A to deliver power into 4-ohm or 8-ohm speaker loads at supply rails of plus-or-minus 30 V. The minimum hFE of 15 keeps base drive current below 540 mA even at full 8 A collector current, which a driver transistor can supply without saturation.
What heatsink is needed to operate BD536 continuously at 8 A collector current in a 25 degree C ambient environment?
The BD536 in TO-220AB has a junction-to-case thermal resistance of approximately 3.1 degrees C per W. At 8 A with a VCE(sat) near 0.5 V, power dissipation reaches about 4 W, requiring a heatsink with thermal resistance below 15 degrees C per W to keep the junction below 150 degrees C. A small 40 mm x 40 mm aluminum heatsink with thermal compound is typically sufficient for continuous 8 A operation.
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Why Buy from FindMyChip
About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
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