MOSFET (N-Channel)

60 V, 350 mA dual N-channel Trench MOSFET

Use the download button to access the BSC028N06NS schematic symbol, PCB footprint, and 3D model.

Use the download button to access the 2N7002DWH6327XTSA1 schematic symbol, PCB footprint, and 3D model.

N channel ;VBRDSS 60 V; RDSon 200 mOhm

Infineon BSC050N04LS G N-channel MOSFET Transistor, 85 A, 40 V, 8-Pin TDSON

Nexperia PSMN4R8-100BSEJ is a mosfet (n-channel) for load switching, motor control, power conversion, and driver circuits. Key specs include 3 pins, -55 to 175 °C, 100 V, 120 A, with D2PAK packaging. Use it for load switches, motor drivers, battery equipment, DC/DC stages, and discrete power-control boards with RFQ pricing, inquiry stock support, and worldwide shipping.

SOT-23, 3 PIN

SSM3K339R,LF is a Toshiba Capacitor for decoupling, filtering, and energy storage. Key specs include 3 PIN, 16 W, and SOT-23 integration. From RFQ pricing in stock for worldwide shipping.

SOT-23, 3 PIN

SOT-323, 3 PIN

Use the download button to access the BSH103,215 schematic symbol, PCB footprint, and 3D model.

MOSFET N-Channel 20V 0.63A SOT523 Diodes Inc DMG1012T-7 N-channel MOSFET Transistor, 0.63 A, 20 V, 3-Pin SOT-523

MOSFET N-Channel 20V 1A SOT323 Diodes Inc DMG1012UW-7 N-channel MOSFET Transistor, 1 A, 20 V, 3-Pin SOT-323

International Rectifier IRFR3910TRPBF is an N-channel MOSFET rated 100 V, 16 A with 115 mΩ Rds(on) and 79 W in a surface-mount TO-252AA (DPAK) package, featuring avalanche energy rating of 150 mJ. From $0.80 in stock worldwide shipping.

International Rectifier IRF7341TRPBF is a dual N-channel MOSFET rated at 55V and 4.7A per channel with ultra-low 50mΩ on-resistance. It offers avalanche-rated, high-reliability construction in a compact SO-8 surface-mount package. Available from authorized distributors with worldwide shipping.

International Rectifier IRF540ZPBF is an N-channel power MOSFET in TO-220AB package rated at 100 V drain-source breakdown voltage, 36 A drain current, and ultra-low 26.5 mΩ on-resistance with avalanche energy rating of 120 mJ. Available from stock with worldwide shipping.

International Rectifier IRF540NLPBF is an N-Channel power MOSFET rated at 100V, 33A with ultra-low 44mΩ on-resistance and 185mJ avalanche energy rating. It features high reliability and avalanche-rated design in a TO-220 package. Available from stock with worldwide shipping.

The SQ2310ES-T1_GE3 is an N-channel MOSFET in a compact SOT23 (3-pin) package designed for low-side switching applications. Key specifications include a maximum drain current of 6 A, ultra-low on-resistance of 0.03 Ω at full rating, and a 20 V minimum breakdown voltage suitable for 12-24 V systems. Available worldwide from major distributors with fast shipping and in-stock availability.

The SQ2318AES-T1_GE3 is a Vishay N-channel MOSFET in a compact SOT-23 (3-pin) package delivering 8 A drain current at 40 V breakdown voltage with low 0.031 Ω on-resistance. Built-in body diode ensures fast switching in low-power DC-DC converters and gate-drive circuits. In-stock worldwide with immediate shipping and volume pricing available.

Vishay SQJ858AEP-T1_GE3 is a single N-channel MOSFET with integrated diode in PowerPak SO-8L surface-mount package, rated for 40V breakdown voltage and 58A drain current. The ultra-low on-resistance of 6.3mΩ makes it ideal for high-efficiency power switching applications requiring minimal heat dissipation. Halogen-free, RoHS compliant, available in stock with competitive pricing and worldwide shipping.

Vishay IRFR420APBF is an N-channel MOSFET in TO-252AA surface-mount package with 500V drain-source breakdown voltage and 3.3A continuous drain current capability. The device features a maximum on-resistance of 3Ω at 25°C with 140 mJ avalanche energy rating, making it suitable for high-voltage switching applications and inductive load circuits. Globally stocked by major electronic distributors with 8-week standard lead time and expedited options.

IXYS IXFX230N20T is a high-performance 200V N-channel MOSFET rated for 230A continuous drain current with avalanche-rated 0.0075Ω RDS(on) and 5000 mJ avalanche energy. This robust power transistor in TO-3P package features integrated body diode for switching applications in motor drives, industrial power supplies, and automotive load switches operating at frequencies up to 50 kHz. Wide availability and proven reliability make it ideal for demanding power conversion and motor control circuits.

International Rectifier IRF7759L2TRPBF is a dual N-channel power MOSFET rated at 75 V with exceptional low on-resistance of 2.3 mΩ and 375 A drain current capability. This advanced power-switch device features an integrated body diode and is optimized for DC-DC conversion and synchronous rectification circuits. Wide availability from major distributors with expedited worldwide shipping.

Use the download button to access the AUIRF7769L2TR schematic symbol, PCB footprint, and 3D model.

NXP BSS138BKW N-channel MOSFET Transistor, 0.32 A, 60 V, 3-Pin SOT-23

Vishay SQJ461EP-T1_GE3 is a 60 V N-channel MOSFET in a compact PowerPAK SO-8L package delivering 21.7 A drain current with ultra-low 0.015 Ω on-resistance. This halogen-free RoHS-compliant power switch features 125 mJ avalanche energy rating and integrated body diode for synchronous rectification and motor control applications. Available worldwide with fast lead times.

Use the download button to access the 2N7002E-7-F schematic symbol, PCB footprint, and 3D model.

Use the download button to access the 2N7002W-7-F schematic symbol, PCB footprint, and 3D model.

Use the download button to access the 2N7002K-7 schematic symbol, PCB footprint, and 3D model.

Use the download button to access the DMN3900UFA-7B schematic symbol, PCB footprint, and 3D model.

TUMT3, 3 PIN

BSS159N is a Infineon mosfet (n-channel) for electronic assemblies. It provides 3 pins, SOT23 (3-Pin). From RFQ pricing, in-stock sourcing supports worldwide shipping.

IPP114N03L G is a Infineon MOSFET for load switching and power management. Key specs include 3 pins, 30 A, and 30 V. Request quote pricing, in-stock sourcing, and worldwide shipping for production builds.

N-channel 30 V 22 mΩ logic level MOSFET

IPD122N10N3 G is a Infineon 3-position transistor for reliable PCB assembly and replacement sourcing. It uses a Other format with documented specifications for engineering review. Request quote-based stock, lifecycle support, and worldwide shipping options through.

Use the download button to access the IPT015N10N5ATMA1 schematic symbol, PCB footprint, and 3D model.

2SK3878(F) is a Toshiba Capacitor for rail decoupling, filtering, coupling. Key specs include 3 PIN, 0 A, 900 V, 9 A and Transistor Outline, Vertical. From $ price in stock worldwide shipping.

VMT3, 3 PIN

Use the download button to access the SQS460EN-T1_GE3 schematic symbol, PCB footprint, and 3D model.

Use the download button to access the SQJ422EP-T1_GE3 schematic symbol, PCB footprint, and 3D model.

Vishay Siliconix SIR422DP-T1-GE3 N-channel MOSFET, 40 A, 40 V, 8-Pin PowerPAK SO

VISHAY - SIS412DN-T1-GE3 - MOSFET, N-CH, 30V, 12A, POWERPAK8

HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, 1212-8, POWERPAK-8

HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8

HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8

Obsolete - Single N-Channel Small Signal MOSFET 60V, 500mA, 5Ω

MOSFET N-Channel 60V 0.00015A SOT23 Diodes Inc BS170FTA N-channel MOSFET Transistor, 0.00015 A, 60 V, 3-Pin SOT-23

Use the download button to access the IRLML2402PBF schematic symbol, PCB footprint, and 3D model.

2N7002CK, N-channel MOSFET Transistor, 300 mA 60 V, 3-Pin SOT23

GREEN, PLASTIC PACKAGE-3