MOSFET (N-Channel)

STMicroelectronics STD5NK40Z-1 is an N-Channel power MOSFET with 400V breakdown voltage and 3A maximum drain current with 1.8Ω on-resistance in an IPAK-3 package. Features avalanche energy rating of 130mJ and integrated built-in diode for robust switching protection. Available from authorized distributors with worldwide shipping.

The STD3NK100Z is a high-voltage N-channel Power MOSFET from STMicroelectronics featuring 1000V drain-source breakdown voltage, 2.5A continuous drain current, and 6-ohm maximum on-resistance in a compact DPAK-3 surface-mount package. It integrates a built-in body diode and delivers 110mJ avalanche energy capability for robust high-voltage switching. Available from authorized distributors with in-stock inventory and worldwide shipping for high-voltage power circuit designs.

The STD25N10F7 is an N-channel power MOSFET by STMicroelectronics with a built-in body diode. Key specs: 100 V drain-source breakdown voltage, 25 A max drain current, ultra-low 0.035 Ω on-resistance, DPAK-3 package. Available with worldwide shipping.

STMicroelectronics STD4N80K5 is an N-channel MDmesh K5 Power MOSFET rated at 800V and 3A with a typical on-resistance of 2.1 ohms. Featuring advanced MDmesh K5 technology, it delivers superior switching efficiency and avalanche energy rating of 74.5mJ. Available in DPAK (TO-252) package, in stock with worldwide shipping.

The STD17NF25 is an N-channel Power MOSFET from STMicroelectronics rated at 250V and 17A with a maximum RDS(on) of 165mΩ in a DPAK surface-mount package. It features a built-in body diode and 100mJ avalanche energy rating, making it robust for inductive switching applications. Available from global distributors with competitive pricing and worldwide shipping.

STMicroelectronics STD45N10F7 is an N-channel power MOSFET rated at 100V and 45A with an ultra-low Rds(on) of 18mΩ and 190mJ avalanche energy capability. Designed for high-efficiency switching in power conversion and motor drive circuits. Available in DPAK (TO-252) package from stock with worldwide shipping.

The STD18N55M5 is an N-channel power MOSFET by STMicroelectronics with a built-in body diode. Key specs: 550 V drain-source breakdown voltage, 14 A max drain current, 0.21 Ω on-resistance, DPAK-3 (TO-252) package. Available with worldwide shipping.

The STD10NM60N is an N-channel 600V MDmesh II Power MOSFET from STMicroelectronics, offering 10A continuous drain current, a typical on-resistance of 530mΩ, and 200mJ avalanche energy rating in a surface-mount DPAK (TO-252) package. Its MDmesh II technology delivers an excellent RDS(on) x area figure of merit for compact, efficient power designs. Available from authorized distributors worldwide with in-stock inventory and global shipping.

N-channel 650 V, 198 mΩ typ., 15 A, MDmesh M5 Power MOSFET in a DPAK package -55 to 150 °C

STMicroelectronics STD10NM60ND is an N-channel power MOSFET with 600V drain-source breakdown voltage, 8A maximum drain current, and 0.6Ω maximum on-resistance in a DPAK-3 TO-252 package. It features a built-in body diode and 130mJ avalanche energy rating for robust switching in high-voltage power applications. Available in stock from STMicroelectronics with worldwide shipping.

The STB7NK80ZT4 is an N-channel power MOSFET from STMicroelectronics rated at 800V and 5.2A in a D2PAK (TO-263AB) package. It features avalanche rating with 210 mJ energy handling, 1.8 ohm on-resistance, and a built-in diode for robust switching applications. Available worldwide with competitive pricing and fast shipping.

The STB80NF55-08T4 is an N-Channel power MOSFET from STMicroelectronics rated at 55 V breakdown voltage and 80 A maximum drain current. It features an ultra-low 8 mΩ on-resistance and a high 1000 mJ avalanche energy rating in a D2PAK (TO-263) surface-mount package. RoHS compliant and available in stock worldwide.

The STD15N65M5 is an N-channel MOSFET from STMicroelectronics rated at 650V breakdown voltage and 11A continuous drain current in a DPAK (TO-252) package. It features a low on-resistance of 0.34 Ohm and 160mJ avalanche energy rating for rugged power switching. Available from stock worldwide with competitive pricing and fast shipping.

STMicroelectronics STD14NM50N is an N-channel MOSFET rated at 12A drain current and 500V breakdown voltage with 0.32Ω on-resistance. Built-in diode and drain-connected TO-252 package simplify high-voltage switching designs. Available from stock with worldwide shipping.

STMicroelectronics STD16NF06LT4 is a logic-level N-channel MOSFET with 60V breakdown voltage and 24A drain current in a DPAK-3 package. Features 85mΩ on-resistance, 200mJ avalanche energy rating, and built-in body diode. Available from stock with worldwide shipping.

STMicroelectronics STD11NM60ND is an N-channel 600V FDmesh II Power MOSFET with 10A drain current, 370 mOhm typical on-resistance, and integrated body diode in a DPAK package. Available from stock with worldwide shipping.

STD150N3LLH6 is a low-voltage N-Channel MOSFET from STMicroelectronics in RoHS-compliant DPAK-3 package. Key specs include 30V breakdown voltage, 80A drain current, and ultra-low 0.0045Ω on-resistance with 525mJ avalanche energy. Available from stock with worldwide shipping.

STD10NF10T4 is an N-Channel Power MOSFET in DPAK-3 (TO-252) package with 100V breakdown voltage and 13A drain current capability. Features ultra-low 0.13Ω on-resistance with built-in freewheeling diode and 70mJ avalanche energy rating. From $0.70 in stock with worldwide shipping.

STMicroelectronics STD13NM60ND is an N-channel FDmesh II Power MOSFET rated at 11A drain current and 600V breakdown voltage with 0.38Ω on-resistance. Features 162mJ avalanche energy rating and built-in diode in a DPAK package. Available from stock with worldwide shipping.

The STD13N60M2 is an N-Channel power MOSFET from STMicroelectronics rated at 600 V breakdown voltage and 11 A maximum drain current. It features a 380 mΩ on-resistance and 125 mJ avalanche energy rating in a compact DPAK-3 (TO-252) package. Available with worldwide shipping and competitive pricing.

The STMicroelectronics STB8N65M5 is an N-channel 650V MDmesh M5 power MOSFET with 7A drain current and ultra-low 560 mΩ typical on-resistance. It features a built-in diode and 120 mJ avalanche energy rating in a TO-263AB (D2PAK) package. Available from stock with worldwide shipping.

STB85NF55T4 is a high-current N-channel power MOSFET by STMicroelectronics rated at 55 V and 80 A with an ultra-low 8 mΩ on-resistance. Key specs: 980 mJ avalanche energy rating, drain-connected case in TO-263AB package. From competitive pricing, in stock with worldwide shipping.

STMicroelectronics STB45N65M5 is an N-channel 650V MDmesh M5 Power MOSFET rated at 35A with ultra-low 78 mOhm maximum on-resistance and 810 mJ avalanche energy. It is available in D2PAK, TO-220FP, and TO-220 packages for high-power switching applications with worldwide shipping.

The STMicroelectronics STD10N60M2 is a single N-channel MDmesh M2 power MOSFET rated at 600V and 7.5A with a typical 0.55Ω on-resistance and 110mJ avalanche energy rating, available in D2PAK, DPAK, and TO-220 packages. It integrates a built-in body diode and features an ultra-low 0.84pF feedback capacitance for high-efficiency switching in power conversion designs. Available from authorized distributors worldwide with competitive pricing and ready stock for immediate shipment.

STMicroelectronics STB6N60M2 is an N-channel MDmesh M2 Power MOSFET rated at 600V and 4.5A with a typical on-resistance of 1.06 ohms and 86mJ avalanche energy rating. MDmesh M2 superjunction technology delivers reduced gate charge and switching losses for efficient high-voltage power conversion. Available in D2PAK package, in stock with worldwide shipping.

The STB34NM60N is an N-Channel 600V MDmesh II Power MOSFET from STMicroelectronics with a 31.5A continuous drain current and 92mΩ typical RDS(on), featuring a built-in diode and 345mJ avalanche energy rating. It is available in D²PAK (TO-263AB) and TO-220 packages for high-efficiency power switching. Available in stock worldwide with competitive pricing for industrial and power conversion applications.

The STMicroelectronics STB18N60M2 is an N-channel MDmesh M2 Power MOSFET rated at 600V and 13A with 255 mΩ typical on-resistance. It features 135 mJ avalanche energy rating and integrated body diode. Available in D²PAK package, in stock worldwide with competitive pricing.

The STMicroelectronics STB16N65M5 is a 650V N-channel power MOSFET with ultra-low 0.279Ω on-resistance and 12A drain current in a D2PAK-3 package. It integrates a built-in body diode and 200mJ avalanche energy rating. Available from stock with worldwide shipping.

STB57N65M5 is an N-Channel power MOSFET rated at 650V and 42A with an ultra-low 0.063Ω on-resistance in a D2PAK (TO-263) surface-mount package. Features 960mJ avalanche energy rating and built-in diode for robust inductive switching performance. Available from STMicroelectronics with worldwide shipping.

The STB45NF06T4 is a high-current N-channel STripFET Power MOSFET from STMicroelectronics with 60V breakdown voltage, 38A continuous drain current, and an exceptionally low 0.028-ohm maximum on-resistance in a 3-pin D2PAK package. It integrates a built-in body diode for simplified synchronous rectification and half-bridge topologies. Available from STMicroelectronics authorized distributors with in-stock inventory and worldwide shipping for power electronics designs.

The STB38N65M5 is a high-voltage N-channel Power MOSFET from STMicroelectronics rated at 650V and 30A with a maximum RDS(on) of 95mΩ. Built with MDmesh M5 technology, it delivers excellent switching performance and a 660mJ avalanche energy rating for robust reliability. Available in a TO-220AB package with worldwide shipping from authorized global distributors.

STB34N65M5 is a high-voltage N-Channel MOSFET from STMicroelectronics in TO-263 package. Key specs include 650V breakdown voltage, 28A drain current, and ultra-low 0.11Ω on-resistance with 510mJ avalanche energy. Available from stock with worldwide shipping.

STB18NM80 is an N-channel 800 V power MOSFET by STMicroelectronics with 17 A drain current and 295 mΩ maximum on-resistance in a TO-263AB D2PAK surface-mount package. Key specs: 600 mJ avalanche energy rating and built-in body diode for robust high-voltage switching. RoHS compliant, in stock with competitive pricing and worldwide shipping.

STMicroelectronics STB26NM60N is an N-Channel power MOSFET with 600V breakdown voltage and 20A maximum drain current with 0.165Ω on-resistance. Features a built-in diode and 610mJ avalanche energy rating for robust switching performance. Available in TO-263 (D2PAK) package with worldwide shipping.

The STB16NF06LT4 is a STripFET Power MOSFET from STMicroelectronics featuring an N-channel design with 60V breakdown voltage, 16A continuous drain current, and ultra-low 0.07-ohm typical on-resistance. Housed in the D2PAK (TO-263AB) surface-mount package, it delivers high efficiency in motor drive and power conversion circuits. Available through authorized distributors with in-stock inventory and worldwide shipping.

STMicroelectronics STB31N65M5 is an N-channel MDmesh M5 Power MOSFET rated at 650V and 22A with a maximum power dissipation of 150W. It features advanced MDmesh M5 superjunction technology for excellent switching performance and high efficiency in power conversion. Available in D2PAK surface-mount package, in stock with worldwide shipping.

STMicroelectronics STB25N80K5 is a high-voltage N-channel power MOSFET rated at 800V and 19.5A with 260mΩ Rds(on) and 200mJ avalanche energy capability. Built with ST's K5 superjunction technology for high-efficiency switching in offline power supplies and PFC circuits. Available in D2PAK (TO-263) package from stock with worldwide shipping.

The STMicroelectronics STB18N65M5 is an N-channel 650V MDmesh M5 power MOSFET with 15A continuous drain current and ultra-low 220 mΩ maximum on-resistance. It features a built-in diode and 210 mJ avalanche energy rating in a D2PAK (TO-263AB) surface-mount package. Available from stock with worldwide shipping.

The STB10N60M2 is a high-voltage N-channel Power MOSFET from STMicroelectronics with 600V breakdown voltage, 7.5A continuous drain current, and 0.6-ohm maximum on-resistance in a D2PAK-3 surface-mount package. It features an ultra-low 0.84pF maximum feedback capacitance for excellent switching performance in offline power conversion circuits. Available from authorized distributors with in-stock inventory and worldwide shipping for power supply designs.

The STB28NM50N is an STMicroelectronics N-Channel 500V Power MOSFET with 21A drain current, 0.158Ω maximum RDS(on), and integrated body diode in a TO-263AB surface-mount package. It features 430mJ avalanche energy rating for rugged operation in unclamped inductive switching circuits. Available from authorized distributors with worldwide shipping.

N‑channel 600 V, 168 mΩ typ., 18 A MDmesh M2 Power MOSFET in a D²PAK, I²PAK, TO-220 and TO-247 packages

The STB13N80K5 is an N-channel power MOSFET from STMicroelectronics rated at 800V breakdown voltage and 12A drain current with a maximum on-resistance of 0.45 ohm and 148 mJ avalanche energy rating. It integrates a built-in body diode for robust switching in high-voltage power conversion circuits. Available in TO-263 (D2PAK) surface-mount package with worldwide shipping.

N-Channel MOSFET, 13 A, 550 V, 3-Pin D2PAK STMicroelectronics STB18N55M5

N-channel 75V - 3.5mΩ - 120A - TO-220 - TO-247 - D2PAK - STripFET™ Power MOSFET

D2PAK-3

TO-263, D2PAK-3/2

D2PAK-3/2 PIN

ROHS COMPLIANT PACKAGE-3

STP13NM60N is an N-channel MDmesh II Power MOSFET rated at 600 V and 11 A with a 280 mΩ typical on-resistance, housed in a TO-220 through-hole package for robust thermal dissipation. Its superjunction technology enables high efficiency in flyback and PFC topologies. Available from STMicroelectronics with worldwide shipping.

STP24NM60N is an N-channel power MOSFET from STMicroelectronics rated at 600 V and 17 A with a maximum on-resistance of 190 mΩ. Features TO-220 package with integrated body diode and 300 mJ avalanche energy rating. Available from stock with worldwide shipping.