IXFX230N20T IXYS SEMICONDUCTOR MOSFET (N-Channel) (Transistor Outline, Vertical) In Stock
IXYS IXFX230N20T is a high-performance 200V N-channel MOSFET rated for 230A continuous drain current with avalanche-rated 0.0075Ω RDS(on) and 5000 mJ avalanche energy. This robust power transistor in TO-3P package features integrated body diode for switching applications in motor drives, industrial power supplies, and automotive load switches operating at frequencies up to 50 kHz. Wide availability and proven reliability make it ideal for demanding power conversion and motor control circuits.
- Manufacturer
- IXYS SEMICONDUCTOR
- Package
- Transistor Outline, Vertical
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- IXFX230N20T Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $17.1300(MOQ 1)
- Temp Range
- -55.0°C to 175.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of IXFX230N20T?
- High current 230A continuous drain rating with ultra-low 0.0075Ω RDS(on) at 25°C
- Avalanche-rated 200V breakdown voltage with 5000 mJ energy rating for transient protection
- Integrated high-speed body diode with 60 pF feedback capacitance for optimized switching performance
What is IXFX230N20T used for?
The IXFX230N20T is engineered for high-power motor drive circuits, industrial DC-DC converters, and automotive load switches requiring high current handling and robust avalanche protection. Its 200V 230A capability makes it ideal for 48V automotive systems with 10+ kW motor drives, solar microinverters, and three-phase AC motor PWM controllers requiring fast switching and low conduction losses at switching frequencies of 20-50 kHz.
What are the specifications of IXFX230N20T?
| YTEOL | 6 |
| Additional Feature | AVALANCHE RATED |
| Avalanche Energy Rating (Eas) | 5000mJ |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 200V |
| Drain Current-Max (ID) | 230A |
| Drain-source On Resistance-Max | 0.0075Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 60pF |
| JESD-30 Code | R-PSIP-T3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | IN-LINE |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 1670W |
| Pulsed Drain Current-Max (IDM) | 630A |
| Surface Mount | NO |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Transistor Outline, Vertical |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | Philippines |
Where can I find the IXFX230N20T datasheet?
IXFX230N20T Datasheet DownloadOfficial datasheet from IXYS SEMICONDUCTOR
What are equivalent replacements for IXFX230N20T?
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What is the on-state resistance and power dissipation of the IXFX230N20T in a 48V motor drive circuit?
The IXFX230N20T delivers RDS(on) = 0.0075 Ω at 25°C (specified at VGS = 10V, ID = 230A), producing only 396 mW conduction loss at 230A continuous current: P = I²R = 230² × 0.0075 = 396W (peak). In a 48V × 200A motor drive, the 0.0075Ω channel resistance introduces 48V ÷ (0.0075Ω) = 6.4A voltage drop per amp of motor current, or 6.4V drop at 100A—acceptable for boost converters and synchronous buck topologies managing 10-15 kW motor power levels.
How does the IXFX230N20T 5000 mJ avalanche energy rating protect against inductive load switching transients?
The IXFX230N20T is rated for 5000 mJ avalanche energy dissipation per device per switching cycle, protecting against voltage spikes from motor back-EMF or power-supply line inductance. A 48V 230A motor coil with 5 µH inductance stores E = ½LI² = ½ × 5µH × 230² = 132 mJ of energy—well within the 5000 mJ margin and permitting multiple switching transients before catastrophic breakdown. This avalanche rating eliminates requirement for external clamp diodes or snubber networks.
What cooling and PCB layout considerations are needed for the IXFX230N20T in continuous 200A operation?
At 230A continuous current with 0.0075Ω RDS(on), junction temperature rises rapidly without adequate cooling. Thermal resistance Rθ(j-a) ≈ 0.5°C/W (typical TO-3P package) means 200W dissipation produces ΔT ≈ 100°C above ambient; at 25°C ambient, junction reaches 125°C, reducing remaining thermal headroom to near the 175°C absolute maximum. PCB layout must include 2-4 oz copper heat planes, thermal vias under the drain tab, and active forced-air cooling or heatsinking to achieve safe 100°C junction temperature margin for long-term reliability.
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Why Buy from FindMyChip
About IXYS SEMICONDUCTOR
IXYS SEMICONDUCTOR is a leading electronic component manufacturer. FindMyChip sources IXYS SEMICONDUCTOR ICs directly from authorized China distributors, offering competitive pricing and reliable stock.
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| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $31.2300 | $31.23 |
| 5+ | $21.0400 | $105.20 |
| 10+ | $18.9100 | $189.10 |
| 30+ | $17.6400 | $529.20 |
| 120+ | $17.6000 | $2112.00 |
| 270+ | $17.1300 | $4625.10 |
In Stock · 24h Response · Worldwide Shipping
Response within 24 hours · Worldwide shipping
“Their engineering team helped us find a pin-compatible alternative when our original MCU went EOL.”
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