IRF7759L2TRPBF International Rectifier MOSFET (N-Channel) (Other) In Stock
International Rectifier IRF7759L2TRPBF is a dual N-channel power MOSFET rated at 75 V with exceptional low on-resistance of 2.3 mΩ and 375 A drain current capability. This advanced power-switch device features an integrated body diode and is optimized for DC-DC conversion and synchronous rectification circuits. Wide availability from major distributors with expedited worldwide shipping.
- Manufacturer
- International Rectifier
- Package
- Other
- Pin Count
- 15
- Lifecycle
- OBSOLETE
- Datasheet
- IRF7759L2TRPBF Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $4.2687(MOQ 1)
- Temp Range
- -55.0°C to 175.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- Dual N-channel configuration with 75 V DS breakdown voltage and ultra-low 2.3 mΩ on-resistance
- 375 A maximum drain current with 257 mJ avalanche energy for robust fault tolerance
- Integrated body diode and optimized gate drive characteristics for efficient power switching
Applications
The IRF7759L2TRPBF is ideal for high-efficiency DC-DC converters, synchronous buck regulators, and power distribution systems requiring minimal conduction losses. Its dual-channel topology enables advanced gate-drive configurations for real-time protection and precise current sharing in multi-phase power supplies and electric vehicle charging systems.
Specifications
| Factory Lead Time | 4Weeks |
| YTEOL | 0 |
| Avalanche Energy Rating (Eas) | 257mJ |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 75V |
| Drain Current-Max (ID) | 375A |
| Drain-source On Resistance-Max | 0.0023Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 609pF |
| JESD-30 Code | R-XBCC-N9 |
| JESD-609 Code | e1 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | UNSPECIFIED |
| Package Shape | RECTANGULAR |
| Package Style | CHIP CARRIER |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 125W |
| Pulsed Drain Current-Max (IDM) | 640A |
| Qualification Status | Not Qualified |
| Surface Mount | YES |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
| Terminal Form | NO LEAD |
| Terminal Position | BOTTOM |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 1 |
| ECCN | EAR99 |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What are the key electrical specifications of the IRF7759L2TRPBF dual N-channel MOSFET?
The IRF7759L2TRPBF features a 75 V drain-source breakdown voltage with an ultra-low on-resistance of 2.3 mΩ at maximum rating and 375 A drain current capability. With 257 mJ avalanche energy and 609 pF feedback capacitance, this dual-channel MOSFET is designed for high-efficiency power switching at 48 V or 12 V rails in compact system designs.
How does the 2.3 mΩ on-resistance impact efficiency in DC-DC converter applications?
The ultra-low 2.3 mΩ on-resistance minimizes conduction losses, with a 100 A switching current producing only 23 mV voltage drop and 2.3 W power dissipation. This exceptional performance enables >95% efficiency in multi-phase buck regulators and 48 V to 12 V intermediate bus converters, reducing thermal management costs and enabling higher power density designs.
What synchronous rectification benefits does the integrated body diode provide?
The IRF7759L2TRPBF's built-in body diode eliminates the need for external synchronous rectifier components, reducing circuit complexity and parasitic inductance. In high-frequency DC-DC circuits operating above 500 kHz, the internal diode enables true synchronous rectification with the ultra-low gate charge characteristics, improving conversion efficiency and reducing heat dissipation compared to discrete diode implementations.
Which power supply and motor control systems utilize the IRF7759L2TRPBF dual topology?
This dual-channel MOSFET is widely used in high-frequency synchronous buck converters (12 V to 3.3 V, 5 A output), 48 V telecom power supplies, EV on-board chargers, and brushless DC motor pre-drivers requiring 75 V blocking and 375 A switching current. The dual configuration enables push-pull drive topologies and real-time current balancing in multi-phase systems.
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About International Rectifier
International Rectifier is a leading electronic component manufacturer. FindMyChip sources International Rectifier ICs directly from authorized China distributors, offering competitive pricing and reliable stock.
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