IRF7759L2TRPBF International Rectifier MOSFET (N-Channel) (Other) In Stock
International Rectifier IRF7759L2TRPBF is a dual N-channel power MOSFET rated at 75 V with exceptional low on-resistance of 2.3 mΩ and 375 A drain current capability. This advanced power-switch device features an integrated body diode and is optimized for DC-DC conversion and synchronous rectification circuits. Wide availability from major distributors with expedited worldwide shipping.
- Manufacturer
- International Rectifier
- Package
- Other
- Pin Count
- 15
- Lifecycle
- OBSOLETE
- Datasheet
- IRF7759L2TRPBF Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $4.2687(MOQ 1)
- Temp Range
- -55.0°C to 175.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of IRF7759L2TRPBF?
- Dual N-channel configuration with 75 V DS breakdown voltage and ultra-low 2.3 mΩ on-resistance
- 375 A maximum drain current with 257 mJ avalanche energy for robust fault tolerance
- Integrated body diode and optimized gate drive characteristics for efficient power switching
What is IRF7759L2TRPBF used for?
The IRF7759L2TRPBF is ideal for high-efficiency DC-DC converters, synchronous buck regulators, and power distribution systems requiring minimal conduction losses. Its dual-channel topology enables advanced gate-drive configurations for real-time protection and precise current sharing in multi-phase power supplies and electric vehicle charging systems.
What are the specifications of IRF7759L2TRPBF?
| Factory Lead Time | 4Weeks |
| YTEOL | 0 |
| Avalanche Energy Rating (Eas) | 257mJ |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 75V |
| Drain Current-Max (ID) | 375A |
| Drain-source On Resistance-Max | 0.0023Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 609pF |
| JESD-30 Code | R-XBCC-N9 |
| JESD-609 Code | e1 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | UNSPECIFIED |
| Package Shape | RECTANGULAR |
| Package Style | CHIP CARRIER |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 125W |
| Pulsed Drain Current-Max (IDM) | 640A |
| Qualification Status | Not Qualified |
| Surface Mount | YES |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
| Terminal Form | NO LEAD |
| Terminal Position | BOTTOM |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 1 |
| ECCN | EAR99 |
Where can I find the IRF7759L2TRPBF datasheet?
IRF7759L2TRPBF Datasheet DownloadOfficial datasheet from International Rectifier
What are equivalent replacements for IRF7759L2TRPBF?
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What are the key electrical specifications of the IRF7759L2TRPBF dual N-channel MOSFET?
The IRF7759L2TRPBF features a 75 V drain-source breakdown voltage with an ultra-low on-resistance of 2.3 mΩ at maximum rating and 375 A drain current capability. With 257 mJ avalanche energy and 609 pF feedback capacitance, this dual-channel MOSFET is designed for high-efficiency power switching at 48 V or 12 V rails in compact system designs.
How does the 2.3 mΩ on-resistance impact efficiency in DC-DC converter applications?
The ultra-low 2.3 mΩ on-resistance minimizes conduction losses, with a 100 A switching current producing only 23 mV voltage drop and 2.3 W power dissipation. This exceptional performance enables >95% efficiency in multi-phase buck regulators and 48 V to 12 V intermediate bus converters, reducing thermal management costs and enabling higher power density designs.
What synchronous rectification benefits does the integrated body diode provide?
The IRF7759L2TRPBF's built-in body diode eliminates the need for external synchronous rectifier components, reducing circuit complexity and parasitic inductance. In high-frequency DC-DC circuits operating above 500 kHz, the internal diode enables true synchronous rectification with the ultra-low gate charge characteristics, improving conversion efficiency and reducing heat dissipation compared to discrete diode implementations.
Which power supply and motor control systems utilize the IRF7759L2TRPBF dual topology?
This dual-channel MOSFET is widely used in high-frequency synchronous buck converters (12 V to 3.3 V, 5 A output), 48 V telecom power supplies, EV on-board chargers, and brushless DC motor pre-drivers requiring 75 V blocking and 375 A switching current. The dual configuration enables push-pull drive topologies and real-time current balancing in multi-phase systems.
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Why Buy from FindMyChip
About International Rectifier
International Rectifier is a leading electronic component manufacturer. FindMyChip sources International Rectifier ICs directly from authorized China distributors, offering competitive pricing and reliable stock.
More from International Rectifier
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $9.7500 | $9.75 |
| 5+ | $8.9700 | $44.85 |
| 10+ | $8.5800 | $85.80 |
| 41+ | $4.9254 | $201.94 |
| 53+ | $4.7612 | $252.34 |
| 71+ | $4.2687 | $303.08 |
In Stock · 24h Response · Worldwide Shipping
Response within 24 hours · Worldwide shipping
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