MOSFET (N-Channel)

MOSFET (N-Channel) components are essential building blocks in modern electronic systems. FindMyChip sources MOSFET (N-Channel) ICs from authorized China distributors with competitive pricing and reliable stock.

2,078 components

How to Choose MOSFET (N-Channel) Components

  • 1Verify electrical specifications (voltage, current, frequency) match your design requirements.
  • 2Check package footprint and thermal characteristics against your PCB layout constraints.
  • 3Confirm lifecycle status and long-term availability for production designs.

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All MOSFET (N-Channel) Components

Showing 601650 of 2,078

SSM3K15AFS,LFToshiba

Use the download button to access the SSM3K15AFS,LF schematic symbol, PCB footprint, and 3D model.

SSM3K35CTC,L3FToshiba

SSM3K35CTC,L3F from Toshiba is a mOSFET (N-Channel). Key specs include 12 Weeks, 3 pins. From inquiry pricing, buyers can request stock with worldwide shipping. Suitable for production sourcing and approved vendor list reviews.

SSM3K35MFV(TPL3)Toshiba

SSM3K35MFV(TPL3) from Toshiba is a mOSFET (N-Channel). Key specs include Drain Current-Max (ID): 0.18 A, Power Dissipation-Max (Abs): 0.15 W, 3 pins. From inquiry pricing, buyers can request stock with worldwide shipping.

SSM3K36TU(TE85L)Toshiba

SSM3K36TU(TE85L) from Toshiba is a mOSFET (N-Channel). Key specs include Drain Current-Max (ID): 0.5 A, Power Dissipation-Max (Abs): 0.8 W, 3 pins. From inquiry pricing, buyers can request stock with worldwide shipping.

ZXMHC3F381N8TCDiodes Inc.

SOP-8

FDMS3660SON Semiconductor

Q2: N-Channel Max rDS(on) = 1.8 mΩ at VGS = 10 V, ID = 30 A Max rDS(on) = 2.2 mΩ at VGS = 4.5 V, ID = 27 A ; Low inductance packaging shortens rise/fall times, resulting in lower switching losses ; Q1: N-Channel Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A; MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing ; RoHS Compliant

RQ3E080BNTBROHM Semiconductor

HALOGEN FREE AND ROHS COMPLIANT, HSMT8, 8 PIN

TK5A50D(STA4,Q,M)Toshiba

TK5A50D(STA4,Q,M) is a Toshiba MOSFET (N-Channel) for load switching, power conversion, and signal-control stages. It combines 3 pins, 500V, and Transistor Outline, Vertical package, 3-pin layout for practical design qualification. From request-a-quote sourcing, FindMyChip supports stock checks and worldwide shipping.

BSZ060NE2LSATMA1Infineon

Use the download button to access the BSZ060NE2LSATMA1 schematic symbol, PCB footprint, and 3D model.

DMN10H100SK3-13Diodes Inc.

DPAK-3/2

TP0610K-T1-GE3Vishay

TP0610K-T1-GE3 is a Vishay Diode for rectification, reverse-polarity protection, clamping. Key specs include 3-Pin, 0 A, 60 V, 0.185 A and SOT-23. From $ price in stock worldwide shipping.

NVMFS5C423NLT1GON Semiconductor

NVMFS5C423NLT1G is a ON Semiconductor MOSFET (N-Channel) for load switching, power conversion, and signal-control stages. It combines -55°C to 175°C, 8 pins, and DFN-5 package, 8-pin layout, -55°C to 175°C operation for practical design qualification. From request-a-quote sourcing, FindMyChip supports stock checks and worldwide shipping.

AUIRFS8409-7PInternational Rectifier

MOSFET N-Ch 40V 522A Automotive D2PAK-6 International Rectifier AUIRFS8409-7P N-channel MOSFET Transistor, 240 A, 522 A, 40 V, 7-Pin D2PAK

IXFH26N50PIXYS SEMICONDUCTOR

Use the download button to access the IXFH26N50P schematic symbol, PCB footprint, and 3D model.

IRLR3410TRPBFInternational Rectifier

HEXFET N-Ch MOSFET 17A 100V DPAK International Rectifier IRLR3410TRPBF N-channel MOSFET Transistor, 17 A, 100 V, 3-Pin DPAK

MMBF170Q-7-FDiodes Inc.

SOT-23, 3 PIN

MMBF170-7-FDiodes Inc.

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grad

SI7884BDP-T1-GE3Vishay

VISHAY - SI7884BDP-T1-GE3 - MOSFET, N CH, 40V, 58A, POWERPAK

ZVN4310GTADiodes Inc.

ZVN4310GTA from Diodes Inc. is a mOSFET (N-Channel). Key specs include 12 Weeks, DS Breakdown Voltage-Min: 100 V, Drain Current-Max (ID): 1.67 A. From inquiry pricing, buyers can request stock with worldwide shipping.

DMN2300UFB4-7BDiodes Inc.

DMN2300UFB4-7B N-Channel MOSFET, 1.3 A, 20 V, 3-Pin X2-DFN1006 Diodes Inc

DMN2300UFD-7Diodes Inc.

GREEN, PLASTIC, CASE X1-DFN1212-3, 3 PIN

ZVN4424GTADiodes Inc.

ZVN4424GTA from Diodes Inc. is a mOSFET (N-Channel). Key specs include 12 Weeks, DS Breakdown Voltage-Min: 240 V, Drain Current-Max (ID): 0.5 A. From inquiry pricing, buyers can request stock with worldwide shipping.

ZVN4525E6TADiodes Inc.

ZVN4525E6TA from Diodes Inc. is a mOSFET (N-Channel). Key specs include 12 Weeks, DS Breakdown Voltage-Min: 250 V, Drain Current-Max (ID): 0.23 A. From inquiry pricing, buyers can request stock with worldwide shipping.

DMN2300U-7Diodes Inc.

20V N-Channel Enhancement MOSFET SOT-23 Diodes Inc DMN2300U-7 N-channel MOSFET Transistor, 1.4 A, 20 V, 3-Pin SOT-23

ZVN4206GVTADiodes Inc.

ZVN4206GVTA from Diodes Inc. is a mOSFET (N-Channel). Key specs include 12 Weeks, DS Breakdown Voltage-Min: 60 V, Drain Current-Max (ID): 1 A. From inquiry pricing, buyers can request stock with worldwide shipping.

SIR870ADP-T1-GE3Vishay

SIR870ADP-T1-GE3 N-Channel MOSFET, 60 A, 100 V, 8-Pin PowerPAK SO Vishay

BSP452HUMA1Infineon

GREEN, PLASTIC, SOT-223, 4 PIN

SQD50N04-5m6_T4GE3Vishay

MOSFET 40V 50A 71W AEC-Q101 Qualified

BSC019N02KS GInfineon

BSC019N02KS G is a Infineon mosfet (n-channel) for electronic assemblies. It provides 9 pins and MOSFET N-Ch 20V 100A TDSON-8 OptiMOS 2. From RFQ pricing, in-stock sourcing supports worldwide shipping.

DMN6040SFDE-7Diodes Inc.

Diodes Inc. DMN6040SFDE-7 is an N-channel MOSFET in U-DFN2020-6 package with 60 V breakdown voltage, 5.3 A drain current, 38 mΩ on-resistance, and built-in body diode. Designed for compact load switching and motor drive applications. Available in stock worldwide with fast shipping.

2N7002-TPMicro Commercial Components (MCC)

PLASTIC PACKAGE-3

2N7002-7-FMULTICOMP

MULTICOMP - 2N7002-7-F - MOSFET, N CHANNEL, 60V, 1.2OHM, 115mA, SOT-23, FULL REEL

2N7002 TRCentral Semiconductor

MOSFET N-Ch 60V .2A

BSC067N06LS3 GInfineon

MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3

BSC109N10NS3 GInfineon

MOSFET N-Ch 100V 63A TDSON-8 OptiMOS 3

BSC077N12NS3 GInfineon

Infineon BSC077N12NS3 G N-channel MOSFET, 98 A, 120 V OptiMOS 3, 8-Pin TDSON

BUK9Y65-100E,115Nexperia

MOSFET N-channel 100 V 65 mo FET

BUK9Y25-80E,115Nexperia

MOSFET N-channel 80 V 27 mo FET

IRFP054NPBFInternational Rectifier

Use the download button to access the IRFP054NPBF schematic symbol, PCB footprint, and 3D model.

IRFP3206PBFInternational Rectifier

Use the download button to access the IRFP3206PBF schematic symbol, PCB footprint, and 3D model.

IPD30N06S2L-23Infineon

GREEN, PLASTIC PACKAGE-3

BSC123N10LS GInfineon

BSC123N10LS G is a 71A 100V transistor by Infineon. Key specs: 71A, 100V, 8-Pin. From quote-based pricing, in stock with worldwide shipping for production sourcing.

BSC123N08NS3GATMA1Infineon

TDSON-8

BSC123N10LSGATMA1Infineon

GREEN, PLASTIC, TDSON-8

IRFB7437PBFInternational Rectifier

Use the download button to access the IRFB7437PBF schematic symbol, PCB footprint, and 3D model.

FDD8451ON Semiconductor

Low gate charge ; RoHS compliant ; Fast Switching ; Max rDS(on) = 24mΩ at VGS = 10V, ID = 9A ; Max rDS(on) = 30mΩat VGS = 4.5V, ID = 7A ; High performance trench technology for extremely low rDS(on)

FDD7N25LZTMON Semiconductor

100% avalanche tested; RDS(on) = 430mΩ (Typ.)@ VGS = 10V, ID = 3.1A; RoHS compliant; Low gate charge (Typ. 12nC); Low Crss (Typ. 8pF); Improved dv/dt capability; ESD improved capability

FDD10N20LZTMON Semiconductor

DPAK-3/2

IRLP3034PBFInternational Rectifier

Use the download button to access the IRLP3034PBF schematic symbol, PCB footprint, and 3D model.

IRLS3034-7PPBFInternational Rectifier

MOSFET N-Channel 40V 380A HEXFET D2PAK-7 International Rectifier IRLS3034-7PPBF N-channel MOSFET Transistor, 380 A, 40 V, 7-Pin D2PAK

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