MOSFET (N-Channel)

MOSFET (N-Channel) components are essential building blocks in modern electronic systems. FindMyChip sources MOSFET (N-Channel) ICs from authorized China distributors with competitive pricing and reliable stock.

2,078 components

How to Choose MOSFET (N-Channel) Components

  • 1Verify electrical specifications (voltage, current, frequency) match your design requirements.
  • 2Check package footprint and thermal characteristics against your PCB layout constraints.
  • 3Confirm lifecycle status and long-term availability for production designs.

Popular Applications

Consumer Electronics

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Factory automation, control systems, and monitoring

Automotive

In-vehicle electronics and advanced driver assistance

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Base stations, routers, and network equipment

All MOSFET (N-Channel) Components

Showing 601–650 of 2,078

SSM3K15AFS,LFToshiba

Use the download button to access the SSM3K15AFS,LF schematic symbol, PCB footprint, and 3D model.

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SSM3K35CTC,L3FToshiba

SSM3K35CTC,L3F from Toshiba is a mOSFET (N-Channel). Key specs include 12 Weeks, 3 pins. From inquiry pricing, buyers can request stock with worldwide shipping. Suitable for production sourcing and approved vendor list reviews.

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SSM3K35MFV(TPL3)Toshiba

SSM3K35MFV(TPL3) from Toshiba is a mOSFET (N-Channel). Key specs include Drain Current-Max (ID): 0.18 A, Power Dissipation-Max (Abs): 0.15 W, 3 pins. From inquiry pricing, buyers can request stock with worldwide shipping.

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SSM3K36TU(TE85L)Toshiba

SSM3K36TU(TE85L) from Toshiba is a mOSFET (N-Channel). Key specs include Drain Current-Max (ID): 0.5 A, Power Dissipation-Max (Abs): 0.8 W, 3 pins. From inquiry pricing, buyers can request stock with worldwide shipping.

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ZXMHC3F381N8TCDiodes Inc.

SOP-8

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FDMS3660SON Semiconductor

Q2: N-Channel Max rDS(on) = 1.8 mΩ at VGS = 10 V, ID = 30 A Max rDS(on) = 2.2 mΩ at VGS = 4.5 V, ID = 27 A ; Low inductance packaging shortens rise/fall times, resulting in lower switching losses ; Q1: N-Channel Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A; MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing ; RoHS Compliant

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RQ3E080BNTBROHM Semiconductor

HALOGEN FREE AND ROHS COMPLIANT, HSMT8, 8 PIN

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TK5A50D(STA4,Q,M)Toshiba

TK5A50D(STA4,Q,M) is a Toshiba MOSFET (N-Channel) for load switching, power conversion, and signal-control stages. It combines 3 pins, 500V, and Transistor Outline, Vertical package, 3-pin layout for practical design qualification. From request-a-quote sourcing, FindMyChip supports stock checks and worldwide shipping.

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BSZ060NE2LSATMA1Infineon

Use the download button to access the BSZ060NE2LSATMA1 schematic symbol, PCB footprint, and 3D model.

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DMN10H100SK3-13Diodes Inc.

DPAK-3/2

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TP0610K-T1-GE3Vishay

TP0610K-T1-GE3 is a Vishay Diode for rectification, reverse-polarity protection, clamping. Key specs include 3-Pin, 0 A, 60 V, 0.185 A and SOT-23. From $ price in stock worldwide shipping.

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NVMFS5C423NLT1GON Semiconductor

NVMFS5C423NLT1G is a ON Semiconductor MOSFET (N-Channel) for load switching, power conversion, and signal-control stages. It combines -55°C to 175°C, 8 pins, and DFN-5 package, 8-pin layout, -55°C to 175°C operation for practical design qualification. From request-a-quote sourcing, FindMyChip supports stock checks and worldwide shipping.

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AUIRFS8409-7PInternational Rectifier

MOSFET N-Ch 40V 522A Automotive D2PAK-6 International Rectifier AUIRFS8409-7P N-channel MOSFET Transistor, 240 A, 522 A, 40 V, 7-Pin D2PAK

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IXFH26N50PIXYS SEMICONDUCTOR

Use the download button to access the IXFH26N50P schematic symbol, PCB footprint, and 3D model.

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IRLR3410TRPBFInternational Rectifier

HEXFET N-Ch MOSFET 17A 100V DPAK International Rectifier IRLR3410TRPBF N-channel MOSFET Transistor, 17 A, 100 V, 3-Pin DPAK

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MMBF170Q-7-FDiodes Inc.

SOT-23, 3 PIN

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MMBF170-7-FDiodes Inc.

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grad

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SI7884BDP-T1-GE3Vishay

VISHAY - SI7884BDP-T1-GE3 - MOSFET, N CH, 40V, 58A, POWERPAK

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ZVN4310GTADiodes Inc.

ZVN4310GTA from Diodes Inc. is a mOSFET (N-Channel). Key specs include 12 Weeks, DS Breakdown Voltage-Min: 100 V, Drain Current-Max (ID): 1.67 A. From inquiry pricing, buyers can request stock with worldwide shipping.

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DMN2300UFB4-7BDiodes Inc.

DMN2300UFB4-7B N-Channel MOSFET, 1.3 A, 20 V, 3-Pin X2-DFN1006 Diodes Inc

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DMN2300UFD-7Diodes Inc.

GREEN, PLASTIC, CASE X1-DFN1212-3, 3 PIN

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ZVN4424GTADiodes Inc.

ZVN4424GTA from Diodes Inc. is a mOSFET (N-Channel). Key specs include 12 Weeks, DS Breakdown Voltage-Min: 240 V, Drain Current-Max (ID): 0.5 A. From inquiry pricing, buyers can request stock with worldwide shipping.

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ZVN4525E6TADiodes Inc.

ZVN4525E6TA from Diodes Inc. is a mOSFET (N-Channel). Key specs include 12 Weeks, DS Breakdown Voltage-Min: 250 V, Drain Current-Max (ID): 0.23 A. From inquiry pricing, buyers can request stock with worldwide shipping.

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DMN2300U-7Diodes Inc.

20V N-Channel Enhancement MOSFET SOT-23 Diodes Inc DMN2300U-7 N-channel MOSFET Transistor, 1.4 A, 20 V, 3-Pin SOT-23

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ZVN4206GVTADiodes Inc.

ZVN4206GVTA from Diodes Inc. is a mOSFET (N-Channel). Key specs include 12 Weeks, DS Breakdown Voltage-Min: 60 V, Drain Current-Max (ID): 1 A. From inquiry pricing, buyers can request stock with worldwide shipping.

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SIR870ADP-T1-GE3Vishay

SIR870ADP-T1-GE3 N-Channel MOSFET, 60 A, 100 V, 8-Pin PowerPAK SO Vishay

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BSP452HUMA1Infineon

GREEN, PLASTIC, SOT-223, 4 PIN

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SQD50N04-5m6_T4GE3Vishay

MOSFET 40V 50A 71W AEC-Q101 Qualified

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BSC019N02KS GInfineon

BSC019N02KS G is a Infineon mosfet (n-channel) for electronic assemblies. It provides 9 pins and MOSFET N-Ch 20V 100A TDSON-8 OptiMOS 2. From RFQ pricing, in-stock sourcing supports worldwide shipping.

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DMN6040SFDE-7Diodes Inc.

Diodes Inc. DMN6040SFDE-7 is an N-channel MOSFET in U-DFN2020-6 package with 60 V breakdown voltage, 5.3 A drain current, 38 mΩ on-resistance, and built-in body diode. Designed for compact load switching and motor drive applications. Available in stock worldwide with fast shipping.

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2N7002-TPMicro Commercial Components (MCC)

PLASTIC PACKAGE-3

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2N7002-7-FMULTICOMP

MULTICOMP - 2N7002-7-F - MOSFET, N CHANNEL, 60V, 1.2OHM, 115mA, SOT-23, FULL REEL

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2N7002 TRCentral Semiconductor

MOSFET N-Ch 60V .2A

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BSC067N06LS3 GInfineon

MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3

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BSC109N10NS3 GInfineon

MOSFET N-Ch 100V 63A TDSON-8 OptiMOS 3

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BSC077N12NS3 GInfineon

Infineon BSC077N12NS3 G N-channel MOSFET, 98 A, 120 V OptiMOS 3, 8-Pin TDSON

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BUK9Y65-100E,115Nexperia

MOSFET N-channel 100 V 65 mo FET

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BUK9Y25-80E,115Nexperia

MOSFET N-channel 80 V 27 mo FET

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IRFP054NPBFInternational Rectifier

Use the download button to access the IRFP054NPBF schematic symbol, PCB footprint, and 3D model.

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IRFP3206PBFInternational Rectifier

Use the download button to access the IRFP3206PBF schematic symbol, PCB footprint, and 3D model.

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IPD30N06S2L-23Infineon

GREEN, PLASTIC PACKAGE-3

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BSC123N10LS GInfineon

BSC123N10LS G is a 71A 100V transistor by Infineon. Key specs: 71A, 100V, 8-Pin. From quote-based pricing, in stock with worldwide shipping for production sourcing.

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BSC123N08NS3GATMA1Infineon

TDSON-8

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BSC123N10LSGATMA1Infineon

GREEN, PLASTIC, TDSON-8

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IRFB7437PBFInternational Rectifier

Use the download button to access the IRFB7437PBF schematic symbol, PCB footprint, and 3D model.

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FDD8451ON Semiconductor

Low gate charge ; RoHS compliant ; Fast Switching ; Max rDS(on) = 24mΩ at VGS = 10V, ID = 9A ; Max rDS(on) = 30mΩat VGS = 4.5V, ID = 7A ; High performance trench technology for extremely low rDS(on)

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FDD7N25LZTMON Semiconductor

100% avalanche tested; RDS(on) = 430mΩ (Typ.)@ VGS = 10V, ID = 3.1A; RoHS compliant; Low gate charge (Typ. 12nC); Low Crss (Typ. 8pF); Improved dv/dt capability; ESD improved capability

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FDD10N20LZTMON Semiconductor

DPAK-3/2

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IRLP3034PBFInternational Rectifier

Use the download button to access the IRLP3034PBF schematic symbol, PCB footprint, and 3D model.

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IRLS3034-7PPBFInternational Rectifier

MOSFET N-Channel 40V 380A HEXFET D2PAK-7 International Rectifier IRLS3034-7PPBF N-channel MOSFET Transistor, 380 A, 40 V, 7-Pin D2PAK

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