MOSFET (N-Channel)
MOSFET (N-Channel) components are essential building blocks in modern electronic systems. FindMyChip sources MOSFET (N-Channel) ICs from authorized China distributors with competitive pricing and reliable stock.
2,078 components
How to Choose MOSFET (N-Channel) Components
- 1Verify electrical specifications (voltage, current, frequency) match your design requirements.
- 2Check package footprint and thermal characteristics against your PCB layout constraints.
- 3Confirm lifecycle status and long-term availability for production designs.
Popular Applications
Consumer Electronics
Smartphones, tablets, and smart home devices
Industrial Systems
Factory automation, control systems, and monitoring
Automotive
In-vehicle electronics and advanced driver assistance
Telecommunications
Base stations, routers, and network equipment
MOSFET (N-Channel) Guides & Articles
CSD87313DMS Synchronous Buck Power Stage Design Guide
Design a compact CSD87313DMS synchronous buck stage with practical guidance for loss, gate drive, PCB layout, EMI, thermal validation, and sourcing.
Aug 6, 2026
STEF05SGR eFuse Selection Guide for 5 V Overcurrent Protection
Choose STEF05SGR for 5 V overcurrent protection by checking current-limit margin, inrush, thermal loss, fault response, and sourcing.
Aug 6, 2026
C0402C103K3RACTU Selection Guide: Choosing a 10 nF 0402 MLCC
Select C0402C103K3RACTU by voltage margin, X7R behavior, tolerance, 0402 assembly risk, and qualified alternatives.
Aug 4, 2026
STM32H753VIT6 MCU Selection Guide: Memory, Package, Connectivity, and Security
Choose STM32H753VIT6 by evaluating memory architecture, LQFP-100 pin fit, connectivity, security, power, and sourcing tradeoffs.
Aug 4, 2026
All MOSFET (N-Channel) Components
Showing 601–650 of 2,078
Use the download button to access the SSM3K15AFS,LF schematic symbol, PCB footprint, and 3D model.
SSM3K35CTC,L3F from Toshiba is a mOSFET (N-Channel). Key specs include 12 Weeks, 3 pins. From inquiry pricing, buyers can request stock with worldwide shipping. Suitable for production sourcing and approved vendor list reviews.
SSM3K35MFV(TPL3) from Toshiba is a mOSFET (N-Channel). Key specs include Drain Current-Max (ID): 0.18 A, Power Dissipation-Max (Abs): 0.15 W, 3 pins. From inquiry pricing, buyers can request stock with worldwide shipping.
SSM3K36TU(TE85L) from Toshiba is a mOSFET (N-Channel). Key specs include Drain Current-Max (ID): 0.5 A, Power Dissipation-Max (Abs): 0.8 W, 3 pins. From inquiry pricing, buyers can request stock with worldwide shipping.
SOP-8
Q2: N-Channel Max rDS(on) = 1.8 mΩ at VGS = 10 V, ID = 30 A Max rDS(on) = 2.2 mΩ at VGS = 4.5 V, ID = 27 A ; Low inductance packaging shortens rise/fall times, resulting in lower switching losses ; Q1: N-Channel Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A; MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing ; RoHS Compliant
HALOGEN FREE AND ROHS COMPLIANT, HSMT8, 8 PIN
TK5A50D(STA4,Q,M) is a Toshiba MOSFET (N-Channel) for load switching, power conversion, and signal-control stages. It combines 3 pins, 500V, and Transistor Outline, Vertical package, 3-pin layout for practical design qualification. From request-a-quote sourcing, FindMyChip supports stock checks and worldwide shipping.
Use the download button to access the BSZ060NE2LSATMA1 schematic symbol, PCB footprint, and 3D model.
DPAK-3/2
TP0610K-T1-GE3 is a Vishay Diode for rectification, reverse-polarity protection, clamping. Key specs include 3-Pin, 0 A, 60 V, 0.185 A and SOT-23. From $ price in stock worldwide shipping.
NVMFS5C423NLT1G is a ON Semiconductor MOSFET (N-Channel) for load switching, power conversion, and signal-control stages. It combines -55°C to 175°C, 8 pins, and DFN-5 package, 8-pin layout, -55°C to 175°C operation for practical design qualification. From request-a-quote sourcing, FindMyChip supports stock checks and worldwide shipping.
MOSFET N-Ch 40V 522A Automotive D2PAK-6 International Rectifier AUIRFS8409-7P N-channel MOSFET Transistor, 240 A, 522 A, 40 V, 7-Pin D2PAK
Use the download button to access the IXFH26N50P schematic symbol, PCB footprint, and 3D model.
HEXFET N-Ch MOSFET 17A 100V DPAK International Rectifier IRLR3410TRPBF N-channel MOSFET Transistor, 17 A, 100 V, 3-Pin DPAK
SOT-23, 3 PIN
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grad
VISHAY - SI7884BDP-T1-GE3 - MOSFET, N CH, 40V, 58A, POWERPAK
ZVN4310GTA from Diodes Inc. is a mOSFET (N-Channel). Key specs include 12 Weeks, DS Breakdown Voltage-Min: 100 V, Drain Current-Max (ID): 1.67 A. From inquiry pricing, buyers can request stock with worldwide shipping.
DMN2300UFB4-7B N-Channel MOSFET, 1.3 A, 20 V, 3-Pin X2-DFN1006 Diodes Inc
GREEN, PLASTIC, CASE X1-DFN1212-3, 3 PIN
ZVN4424GTA from Diodes Inc. is a mOSFET (N-Channel). Key specs include 12 Weeks, DS Breakdown Voltage-Min: 240 V, Drain Current-Max (ID): 0.5 A. From inquiry pricing, buyers can request stock with worldwide shipping.
ZVN4525E6TA from Diodes Inc. is a mOSFET (N-Channel). Key specs include 12 Weeks, DS Breakdown Voltage-Min: 250 V, Drain Current-Max (ID): 0.23 A. From inquiry pricing, buyers can request stock with worldwide shipping.
20V N-Channel Enhancement MOSFET SOT-23 Diodes Inc DMN2300U-7 N-channel MOSFET Transistor, 1.4 A, 20 V, 3-Pin SOT-23
ZVN4206GVTA from Diodes Inc. is a mOSFET (N-Channel). Key specs include 12 Weeks, DS Breakdown Voltage-Min: 60 V, Drain Current-Max (ID): 1 A. From inquiry pricing, buyers can request stock with worldwide shipping.
SIR870ADP-T1-GE3 N-Channel MOSFET, 60 A, 100 V, 8-Pin PowerPAK SO Vishay
GREEN, PLASTIC, SOT-223, 4 PIN
MOSFET 40V 50A 71W AEC-Q101 Qualified
BSC019N02KS G is a Infineon mosfet (n-channel) for electronic assemblies. It provides 9 pins and MOSFET N-Ch 20V 100A TDSON-8 OptiMOS 2. From RFQ pricing, in-stock sourcing supports worldwide shipping.
Diodes Inc. DMN6040SFDE-7 is an N-channel MOSFET in U-DFN2020-6 package with 60 V breakdown voltage, 5.3 A drain current, 38 mΩ on-resistance, and built-in body diode. Designed for compact load switching and motor drive applications. Available in stock worldwide with fast shipping.
PLASTIC PACKAGE-3
MULTICOMP - 2N7002-7-F - MOSFET, N CHANNEL, 60V, 1.2OHM, 115mA, SOT-23, FULL REEL
MOSFET N-Ch 60V .2A
MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3
MOSFET N-Ch 100V 63A TDSON-8 OptiMOS 3
Infineon BSC077N12NS3 G N-channel MOSFET, 98 A, 120 V OptiMOS 3, 8-Pin TDSON
MOSFET N-channel 100 V 65 mo FET
MOSFET N-channel 80 V 27 mo FET
Use the download button to access the IRFP054NPBF schematic symbol, PCB footprint, and 3D model.
Use the download button to access the IRFP3206PBF schematic symbol, PCB footprint, and 3D model.
GREEN, PLASTIC PACKAGE-3
BSC123N10LS G is a 71A 100V transistor by Infineon. Key specs: 71A, 100V, 8-Pin. From quote-based pricing, in stock with worldwide shipping for production sourcing.
TDSON-8
GREEN, PLASTIC, TDSON-8
Use the download button to access the IRFB7437PBF schematic symbol, PCB footprint, and 3D model.
Low gate charge ; RoHS compliant ; Fast Switching ; Max rDS(on) = 24mΩ at VGS = 10V, ID = 9A ; Max rDS(on) = 30mΩat VGS = 4.5V, ID = 7A ; High performance trench technology for extremely low rDS(on)
100% avalanche tested; RDS(on) = 430mΩ (Typ.)@ VGS = 10V, ID = 3.1A; RoHS compliant; Low gate charge (Typ. 12nC); Low Crss (Typ. 8pF); Improved dv/dt capability; ESD improved capability
DPAK-3/2
Use the download button to access the IRLP3034PBF schematic symbol, PCB footprint, and 3D model.
MOSFET N-Channel 40V 380A HEXFET D2PAK-7 International Rectifier IRLS3034-7PPBF N-channel MOSFET Transistor, 380 A, 40 V, 7-Pin D2PAK
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