SQ2310ES-T1_GE3 Vishay MOSFET (N-Channel) (SOT23 (3-Pin)) In Stock
The SQ2310ES-T1_GE3 is an N-channel MOSFET in a compact SOT23 (3-pin) package designed for low-side switching applications. Key specifications include a maximum drain current of 6 A, ultra-low on-resistance of 0.03 Ω at full rating, and a 20 V minimum breakdown voltage suitable for 12-24 V systems. Available worldwide from major distributors with fast shipping and in-stock availability.
- Manufacturer
- Vishay
- Package
- SOT23 (3-Pin)
- Pin Count
- 3
- Lifecycle
- OBSOLETE
- Datasheet
- SQ2310ES-T1_GE3 Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $0.2633(MOQ 1)
- Temp Range
- -55.0°C to 175.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of SQ2310ES-T1_GE3?
- Ultra-low 0.03Ω drain-source on-resistance for minimal power dissipation
- Compact SOT23 3-pin package fits tight PCB layouts
- 6 A maximum drain current handles medium-power switching up to 20 V
What is SQ2310ES-T1_GE3 used for?
The SQ2310ES-T1_GE3 excels in low-side switching for battery management circuits, LED drivers, and DC motor control requiring efficient gate drive up to 20 V. Its 6 A rating and 0.03 Ω on-resistance make it ideal for compact mobile power supplies and charging applications where space and thermal efficiency are critical constraints.
What are the specifications of SQ2310ES-T1_GE3?
| YTEOL | 0 |
| Avalanche Energy Rating (Eas) | 5mJ |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 20V |
| Drain Current-Max (ID) | 6A |
| Drain-source On Resistance-Max | 0.03Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 46pF |
| JEDEC-95 Code | TO-236AB |
| JESD-30 Code | R-PDSO-G3 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | N-CHANNEL |
| Pulsed Drain Current-Max (IDM) | 24A |
| Qualification Status | Not Qualified |
| Surface Mount | YES |
| Terminal Finish | Matte Tin (Sn) |
| Terminal Form | GULL WING |
| Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | 10 |
| Transistor Element Material | SILICON |
| Turn-off Time-Max (toff) | 46ns |
| Turn-on Time-Max (ton) | 23ns |
| Package | SOT23 (3-Pin) |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 1 |
| ECCN | EAR99 |
Where can I find the SQ2310ES-T1_GE3 datasheet?
SQ2310ES-T1_GE3 Datasheet DownloadOfficial datasheet from Vishay
What are equivalent replacements for SQ2310ES-T1_GE3?
Compatible alternatives and drop-in replacements for SQ2310ES-T1_GE3:
Frequently Asked Questions
What is the maximum drain-source on-resistance of the SQ2310ES-T1_GE3 MOSFET?
The SQ2310ES-T1_GE3 features a maximum drain-source on-resistance (RDS-on) of 0.03 Ω, which is exceptionally low for a SOT23-packaged N-channel MOSFET. This ultra-low resistance minimizes power dissipation during switching, reducing heat generation and improving overall circuit efficiency. At a 6 A drain current and typical operating conditions, this on-resistance specification makes it suitable for low-loss battery charging and motor control applications.
Can the SQ2310ES-T1_GE3 be used in a 12 V or 24 V low-side switch application?
Yes, the SQ2310ES-T1_GE3 is well-suited for 12 V and 24 V low-side switching. The device has a minimum breakdown voltage (BVDSS) of 20 V and a maximum rating above that, providing adequate voltage headroom for both systems. With 6 A maximum drain current capability and a built-in body diode, this MOSFET handles typical DC motor control, solenoid driving, and load switching from a 12-24 V supply rail efficiently.
How does the SOT23 3-pin package of the SQ2310ES-T1_GE3 compare to alternatives for compact PCB designs?
The SOT23 (3-pin) package minimizes board footprint compared to larger alternatives like TO-220 or D2PAK. The SQ2310ES-T1_GE3 occupies approximately 2.9 mm × 2.7 mm, making it ideal for densely packed consumer electronics and wearable devices where space is at a premium. The compact form factor does not sacrifice performance: the 6 A rating and 0.03 Ω on-resistance remain competitive for most mobile and industrial low-power switching circuits.
What avalanche energy rating does the SQ2310ES-T1_GE3 provide for inductive load switching protection?
The SQ2310ES-T1_GE3 offers an avalanche energy rating (Eas) of 5 mJ, which indicates its ability to withstand single-pulse inductive switching transients without damage. This 5 mJ rating is sufficient for relay, solenoid, and motor winding de-energization scenarios where inductive voltage spikes would otherwise destroy the switch. The built-in body diode provides additional protection by clamping transient overvoltages during rapid turn-off events.
Related Guides
STM32H725IGT3 Selection Guide: Memory, Package, Temperature, and Supply
Choose the right STM32H725 variant by comparing Flash, package, pin count, temperature grade, connectivity, and production requirements.
Aug 1, 2026
STM32H725IGT3 High-Performance MCU Design Guide
Design STM32H725IGT3 systems for reliable 550 MHz operation with practical power, clock, cache, DMA, PCB, ADC, and recovery guidance.
Jul 31, 2026
150141VS73100 Violet SMD LED Selection Guide: Color, Drive, and Sourcing
Select the 150141VS73100 by wavelength, brightness, drive current, 3528 fit, reliability, and traceable sourcing requirements.
Jul 31, 2026
STEF05SGR 5 V eFuse Protection Design Guide
Design a reliable 5 V STEF05SGR eFuse stage with current-limit math, capacitor sizing, thermal analysis, fault recovery, and PCB layout guidance.
Jul 30, 2026
Why Buy from FindMyChip
About Vishay
Vishay is a leading electronic component manufacturer. FindMyChip sources Vishay ICs directly from authorized China distributors, offering competitive pricing and reliable stock.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.2900 | $1.29 |
| 10+ | $0.8110 | $8.11 |
| 100+ | $0.5353 | $53.53 |
| 250+ | $0.3240 | $81.00 |
| 500+ | $0.2835 | $141.75 |
| 1000+ | $0.2633 | $263.30 |
In Stock · 24h Response · Worldwide Shipping
Response within 24 hours · Worldwide shipping
“Their engineering team helped us find a pin-compatible alternative when our original MCU went EOL.”
You May Also Like
AO3416
Alpha & Omega Semiconductors
MOSFET (N-Channel)
2SK3568
Toshiba
MOSFET (N-Channel)
BSS139 H6327
Infineon
MOSFET (N-Channel)
TPWR8004PL,L1Q
Toshiba
MOSFET (N-Channel)
TPW1R005PL,L1Q
Toshiba
MOSFET (N-Channel)
ZXMN3B01FTA
Diodes Inc.
MOSFET (N-Channel)
AO3422
Alpha & Omega Semiconductors
MOSFET (N-Channel)
IRLML2402TRPBF
Infineon
MOSFET (N-Channel)
IRLML2803TRPBF
Infineon
MOSFET (N-Channel)
IRF7607TRPBF
Infineon
MOSFET (N-Channel)
IPD530N15N3GATMA1
Infineon
MOSFET (N-Channel)
BSZ520N15NS3GATMA1
Infineon
MOSFET (N-Channel)
BSC360N15NS3GATMA1
Infineon
MOSFET (N-Channel)
IPI041N12N3 G
Infineon
MOSFET (N-Channel)
PMZB290UNE2
Nexperia
MOSFET (N-Channel)
ZVN4306GVTA
Diodes Inc.
MOSFET (N-Channel)
NTR3C21NZT1G
ON Semiconductor
MOSFET (N-Channel)
DMN2230UQ-7
Diodes Inc.
MOSFET (N-Channel)
CPH6442-TL-W
ON Semiconductor
MOSFET (N-Channel)
BF998E6327HTSA1
Infineon
MOSFET (N-Channel)
2SK209-BL(TE85L,F)
Toshiba
MOSFET (N-Channel)
IXFH20N100P
IXYS SEMICONDUCTOR
MOSFET (N-Channel)
IRFH7545TRPBF
Infineon
MOSFET (N-Channel)
IRLU3410PBF
Infineon
MOSFET (N-Channel)