SQ2310ES-T1_GE3 Vishay MOSFET (N-Channel) (SOT23 (3-Pin)) In Stock
The SQ2310ES-T1_GE3 is an N-channel MOSFET in a compact SOT23 (3-pin) package designed for low-side switching applications. Key specifications include a maximum drain current of 6 A, ultra-low on-resistance of 0.03 Ω at full rating, and a 20 V minimum breakdown voltage suitable for 12-24 V systems. Available worldwide from major distributors with fast shipping and in-stock availability.
- Manufacturer
- Vishay
- Package
- SOT23 (3-Pin)
- Pin Count
- 3
- Lifecycle
- OBSOLETE
- Datasheet
- SQ2310ES-T1_GE3 Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $0.2633(MOQ 1)
- Temp Range
- -55.0°C to 175.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of SQ2310ES-T1_GE3?
- Ultra-low 0.03Ω drain-source on-resistance for minimal power dissipation
- Compact SOT23 3-pin package fits tight PCB layouts
- 6 A maximum drain current handles medium-power switching up to 20 V
What is SQ2310ES-T1_GE3 used for?
The SQ2310ES-T1_GE3 excels in low-side switching for battery management circuits, LED drivers, and DC motor control requiring efficient gate drive up to 20 V. Its 6 A rating and 0.03 Ω on-resistance make it ideal for compact mobile power supplies and charging applications where space and thermal efficiency are critical constraints.
What are the specifications of SQ2310ES-T1_GE3?
| YTEOL | 0 |
| Avalanche Energy Rating (Eas) | 5mJ |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 20V |
| Drain Current-Max (ID) | 6A |
| Drain-source On Resistance-Max | 0.03Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 46pF |
| JEDEC-95 Code | TO-236AB |
| JESD-30 Code | R-PDSO-G3 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | N-CHANNEL |
| Pulsed Drain Current-Max (IDM) | 24A |
| Qualification Status | Not Qualified |
| Surface Mount | YES |
| Terminal Finish | Matte Tin (Sn) |
| Terminal Form | GULL WING |
| Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | 10 |
| Transistor Element Material | SILICON |
| Turn-off Time-Max (toff) | 46ns |
| Turn-on Time-Max (ton) | 23ns |
| Package | SOT23 (3-Pin) |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 1 |
| ECCN | EAR99 |
Where can I find the SQ2310ES-T1_GE3 datasheet?
SQ2310ES-T1_GE3 Datasheet DownloadOfficial datasheet from Vishay
What are equivalent replacements for SQ2310ES-T1_GE3?
Compatible alternatives and drop-in replacements for SQ2310ES-T1_GE3:
Frequently Asked Questions
What is the maximum drain-source on-resistance of the SQ2310ES-T1_GE3 MOSFET?
The SQ2310ES-T1_GE3 features a maximum drain-source on-resistance (RDS-on) of 0.03 Ω, which is exceptionally low for a SOT23-packaged N-channel MOSFET. This ultra-low resistance minimizes power dissipation during switching, reducing heat generation and improving overall circuit efficiency. At a 6 A drain current and typical operating conditions, this on-resistance specification makes it suitable for low-loss battery charging and motor control applications.
Can the SQ2310ES-T1_GE3 be used in a 12 V or 24 V low-side switch application?
Yes, the SQ2310ES-T1_GE3 is well-suited for 12 V and 24 V low-side switching. The device has a minimum breakdown voltage (BVDSS) of 20 V and a maximum rating above that, providing adequate voltage headroom for both systems. With 6 A maximum drain current capability and a built-in body diode, this MOSFET handles typical DC motor control, solenoid driving, and load switching from a 12-24 V supply rail efficiently.
How does the SOT23 3-pin package of the SQ2310ES-T1_GE3 compare to alternatives for compact PCB designs?
The SOT23 (3-pin) package minimizes board footprint compared to larger alternatives like TO-220 or D2PAK. The SQ2310ES-T1_GE3 occupies approximately 2.9 mm × 2.7 mm, making it ideal for densely packed consumer electronics and wearable devices where space is at a premium. The compact form factor does not sacrifice performance: the 6 A rating and 0.03 Ω on-resistance remain competitive for most mobile and industrial low-power switching circuits.
What avalanche energy rating does the SQ2310ES-T1_GE3 provide for inductive load switching protection?
The SQ2310ES-T1_GE3 offers an avalanche energy rating (Eas) of 5 mJ, which indicates its ability to withstand single-pulse inductive switching transients without damage. This 5 mJ rating is sufficient for relay, solenoid, and motor winding de-energization scenarios where inductive voltage spikes would otherwise destroy the switch. The built-in body diode provides additional protection by clamping transient overvoltages during rapid turn-off events.
Related Guides
CSD87313DMS Synchronous Buck Power Stage Design Guide
Design a compact CSD87313DMS synchronous buck stage with practical guidance for loss, gate drive, PCB layout, EMI, thermal validation, and sourcing.
Aug 6, 2026
STEF05SGR eFuse Selection Guide for 5 V Overcurrent Protection
Choose STEF05SGR for 5 V overcurrent protection by checking current-limit margin, inrush, thermal loss, fault response, and sourcing.
Aug 6, 2026
C0402C103K3RACTU Selection Guide: Choosing a 10 nF 0402 MLCC
Select C0402C103K3RACTU by voltage margin, X7R behavior, tolerance, 0402 assembly risk, and qualified alternatives.
Aug 4, 2026
STM32H753VIT6 MCU Selection Guide: Memory, Package, Connectivity, and Security
Choose STM32H753VIT6 by evaluating memory architecture, LQFP-100 pin fit, connectivity, security, power, and sourcing tradeoffs.
Aug 4, 2026
Why Buy from FindMyChip
About Vishay
Vishay is a leading electronic component manufacturer. FindMyChip sources Vishay ICs directly from authorized China distributors, offering competitive pricing and reliable stock.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.2900 | $1.29 |
| 10+ | $0.8110 | $8.11 |
| 100+ | $0.5353 | $53.53 |
| 250+ | $0.3240 | $81.00 |
| 500+ | $0.2835 | $141.75 |
| 1000+ | $0.2633 | $263.30 |
In Stock · 24h Response · Worldwide Shipping
Response within 24 hours · Worldwide shipping
“Their engineering team helped us find a pin-compatible alternative when our original MCU went EOL.”
You May Also Like
AO3416
Alpha & Omega Semiconductors
MOSFET (N-Channel)
2SK3568
Toshiba
MOSFET (N-Channel)
BSS139 H6327
Infineon
MOSFET (N-Channel)
TPWR8004PL,L1Q
Toshiba
MOSFET (N-Channel)
TPW1R005PL,L1Q
Toshiba
MOSFET (N-Channel)
ZXMN3B01FTA
Diodes Inc.
MOSFET (N-Channel)
AO3422
Alpha & Omega Semiconductors
MOSFET (N-Channel)
IRLML2402TRPBF
Infineon
MOSFET (N-Channel)
IRLML2803TRPBF
Infineon
MOSFET (N-Channel)
IRF7607TRPBF
Infineon
MOSFET (N-Channel)
IPD530N15N3GATMA1
Infineon
MOSFET (N-Channel)
BSZ520N15NS3GATMA1
Infineon
MOSFET (N-Channel)
BSC360N15NS3GATMA1
Infineon
MOSFET (N-Channel)
IPI041N12N3 G
Infineon
MOSFET (N-Channel)
PMZB290UNE2
Nexperia
MOSFET (N-Channel)
ZVN4306GVTA
Diodes Inc.
MOSFET (N-Channel)
NTR3C21NZT1G
ON Semiconductor
MOSFET (N-Channel)
DMN2230UQ-7
Diodes Inc.
MOSFET (N-Channel)
CPH6442-TL-W
ON Semiconductor
MOSFET (N-Channel)
BF998E6327HTSA1
Infineon
MOSFET (N-Channel)
2SK209-BL(TE85L,F)
Toshiba
MOSFET (N-Channel)
IXFH20N100P
IXYS SEMICONDUCTOR
MOSFET (N-Channel)
IRFH7545TRPBF
Infineon
MOSFET (N-Channel)
IRLU3410PBF
Infineon
MOSFET (N-Channel)