STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
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All STMicroelectronics Components
Showing 10,501–10,550 of 11,957
The STGB7NC60HD is an N-channel IGBT transistor in a D2PAK (TO-263) package rated at 600 V collector-emitter voltage and 25 A collector current, with a built-in freewheeling diode, targeting motor drive inverters, switch-mode power supplies, and induction heating applications.
The STGB10NB37LZT4 is an N-channel IGBT transistor rated for 375 V collector-emitter voltage and 20 A continuous collector current, featuring an integrated freewheeling diode and gate resistor in a 3-pin D2PAK (TO-263) surface-mount package. It incorporates voltage clamping for enhanced robustness against inductive switching transients, making it suitable for high-reliability power switching applications. Ideal for motor drives, switching power supplies, and induction heating systems operating from mains voltage.
STGB14NC60KD is an N-channel IGBT rated at 600 V collector-emitter voltage and 25 A maximum collector current, with an integrated anti-parallel freewheeling diode. Gate-emitter threshold is up to 6.5 V and maximum gate-emitter voltage is 20 V. The 3-pin D2PAK (TO-263) surface-mount package suits motor drives, inverters, and switching power supplies.
N-channel 900 V, 3.6 Ω typ., 3 A SuperMESH Power MOSFET in a DPAK package
3 PIN
TO-252, DPAK-3/2
ROHS COMPLIANT, TO-220FP, 3 PIN
ROHS COMPLIANT, TO-220FP, 3 PIN
TO-220FP, 3 PIN
The STDS75DS2F is a 12-bit digital temperature sensor from STMicroelectronics with ±3°C maximum accuracy and I2C serial interface. It operates from 2.7V to 5.5V and includes a thermal watchdog alarm output for over-temperature protection. Available in a compact 8-pin MSOP surface-mount package with worldwide stock and shipping.
The STB80NF10T4 is an N-channel power MOSFET from STMicroelectronics rated at 100 V drain-source breakdown voltage and 80 A maximum drain current with an ultra-low on-resistance of 15 mΩ in a D2PAK (TO-263) package. It integrates a built-in body diode and supports 350 mJ avalanche energy for robust transient protection. Available from authorized distributors worldwide with competitive pricing and global shipping.
STMicroelectronics STD7NK40ZT4 is an N-channel MOSFET with 400V breakdown voltage and 5.4A drain current in a TO-252AA package. It features a maximum drain-source on-resistance of 1 Ohm and includes a built-in body diode for robust switching. Available from stock with worldwide shipping.
STD15NF10T4 is an N-channel power MOSFET from STMicroelectronics rated at 100 V and 15 A with 0.08 Ω on-resistance in a compact DPAK-3 (TO-252) package. It integrates a built-in body diode and features 75 mJ avalanche energy rating for rugged switching applications. Available from stock with worldwide shipping at competitive pricing.
The STD60NF06T4 is an N-channel STripFET II power MOSFET rated at 60 V and 60 A with 0.014 Ω typical on-resistance and 350 mJ avalanche energy rating in a DPAK package. Available from STMicroelectronics with worldwide shipping.
STD6NF10 is an N-channel power MOSFET from STMicroelectronics with a 100V drain-source breakdown voltage, 6A maximum drain current, and a maximum on-resistance of 0.25 ohm in a 3-pin D-PAK (TO-252) package. It includes a built-in diode and a 200mJ avalanche energy rating for robust switching. Available from authorized distributors worldwide with fast shipping.
Use the download button to access the STD3NK80Z-1 schematic symbol, PCB footprint, and 3D model.
N-channel 100 V, 33 mΩ typ, 25 A, STripFET™ II Power MOSFET in a DPAK package
STD35NF3LL is an integrated circuit by STMicroelectronics. Key specs include Avalanche Energy Rating (Eas): 300 mJ; DS Breakdown Voltage-Min: 30 V. From RFQ price checks to worldwide shipping, FindMyChip supports sourcing.
STMicroelectronics STD20NF06 is an N-channel power MOSFET rated at 60V drain-source breakdown voltage and 24A drain current with 40 mΩ on-resistance, packaged in a TO-252 (DPAK) surface-mount case with an integrated flyback diode. Available in stock worldwide with fast shipping.
N-channel 900 V, 4.7 Ω typ 2.1 A SuperMESH Power MOSFET in a DPAK package
N-channel 600 V, 1.7 Ω typ., 4 A SuperMESH Power MOSFET in a D²PAK package
ST3243CPR, Line Transceiver, EIA/TIA-232, RS-232, V.24, V.28 3-TX 5-RX 3-TRX, 3.3 V, 5 V, 28-Pin SSOP
STB55NF06 is an integrated circuit by STMicroelectronics. Key specs include Avalanche Energy Rating (Eas): 350 mJ; DS Breakdown Voltage-Min: 60 V. From RFQ price checks to worldwide shipping, FindMyChip supports sourcing.
N-Channel 55 V 80A (Tc) 300W (Tc) Surface Mount D2PAK -55°C ~ 175°C
DPAK-3
STD12NF06L is an integrated circuit by STMicroelectronics. Key specs include Avalanche Energy Rating (Eas): 100 mJ; DS Breakdown Voltage-Min: 60 V. From RFQ price checks to worldwide shipping, FindMyChip supports sourcing.
LEAD FREE, TSSOP-16
STD10NF10 is an integrated circuit by STMicroelectronics. Key specs include Avalanche Energy Rating (Eas): 70 mJ; DS Breakdown Voltage-Min: 100 V. From RFQ price checks to worldwide shipping, FindMyChip supports sourcing.
MOSFET N-Ch 600V 7A SuperFREDMesh D2PAK STMicroelectronics STB9NK60ZDT4 N-channel MOSFET Transistor, 7 A, 600 V, 3-Pin D2PAK
D2PAK-3
ST75185CTR, Line Transceiver, EIA/TIA-232-E, RS-232, V.28 3-TX 5-RX 3-TRX, 20-Pin TSSOP
ROHS COMPLIANT, TO-263, D2PAK-3
STB75NF75L is an integrated circuit by STMicroelectronics. Key specs include Avalanche Energy Rating (Eas): 680 mJ; DS Breakdown Voltage-Min: 75 V. From RFQ price checks to worldwide shipping, FindMyChip supports sourcing.
D2PAK-3
ROHS COMPLIANT, SOP-8
LEAD FREE, TSSOP-16
0.300 INCH, PLASTIC, SOP-28
ST202BDR, Line Transceiver, EIA/TIA-232, RS-232, RS-232-E, V.28 2-TX 2-RX 2-TRX, 5 V, 16-Pin SOP
STMicroelectronics SMDB3 DIAC 36V, 1A, 3-Pin SOT-23
N-channel 100 V, 9.0 mΩ typ., 110 A STripFET™ II Power MOSFETs in D²PAK, TO-220 and TO-247 packages
Micro 8-Bit 8K Flash ST7FLITE29F2B6
0.300 INCH, PLASTIC, DIP-16
Automotive-grade N-channel 40 V, 4.3 mΩ typ., 120 A STripFET™ II Power MOSFET in a D²PAK and TO-220
STB11NK40Z is an integrated circuit by STMicroelectronics. Key specs include Drain Current-Max (ID): 9 A; JESD-609 Code: e3. From RFQ price checks to worldwide shipping, FindMyChip supports sourcing.
Use the download button to access the STB10NK60ZT4 schematic symbol, PCB footprint, and 3D model.
ROHS COMPLIANT, SOP-8
ST62T65CB6, 8 bit ST62 Microcontroller 8MHz 3884 B OTP, 256 kB RAM, 28-Pin PDIP
ST75185CDR, Line Transceiver, EIA/TIA-232-E, RS-232, V.28 3-TX 5-RX 3-TRX, 20-Pin SO
ST62T01CB6, 8 bit ST6 Microcontroller 8MHz 2 kB OTP, 64 B RAM, 16-Pin PDIP
0.600 INCH, PLASTIC, DIP-28
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