STP36NF06 STMicroelectronics MOSFET (N-Channel) (Transistor Outline, Vertical) In Stock
STP36NF06 is an N-channel power MOSFET from STMicroelectronics in a TO-220AB package rated at 60 V and 30 A. Features 40 mΩ maximum RDS(on) and 200 mJ avalanche energy rating for robust switching. Available from stock with worldwide shipping.
- Manufacturer
- STMicroelectronics
- Package
- Transistor Outline, Vertical
- Pin Count
- 3
- Lifecycle
- OBSOLETE
- Datasheet
- STP36NF06 Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $0.4381(MOQ 2000)
- Temp Range
- ?°C to 175.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of STP36NF06?
- 60 V drain-source breakdown voltage with 30 A continuous drain current for high-power switching applications
- 40 mΩ maximum RDS(on) minimizes conduction losses and thermal dissipation in motor drive and DC-DC converter designs
- 200 mJ avalanche energy rating provides robust protection against inductive voltage spikes without external clamping
What is STP36NF06 used for?
The STP36NF06 is widely used in DC motor control, synchronous rectification, and high-current load switching circuits where a 60 V, 30 A device is required. Its low 40 mΩ RDS(on) reduces conduction losses in PWM-driven H-bridge and half-bridge topologies, supporting efficient power conversion in industrial and automotive auxiliary systems. Battery chargers, solar MPPT controllers, and e-bike power stages also benefit from its high avalanche energy tolerance and TO-220AB through-hole package for heat-sink mounting.
What are the specifications of STP36NF06?
| Pbfree Code | Yes |
| YTEOL | 0 |
| Avalanche Energy Rating (Eas) | 200mJ |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 60V |
| Drain Current-Max (ID) | 30A |
| Drain-source On Resistance-Max | 0.04Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-220AB |
| JESD-30 Code | R-PSFM-T3 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 70W |
| Pulsed Drain Current-Max (IDM) | 120A |
| Qualification Status | Not Qualified |
| Surface Mount | NO |
| Terminal Finish | MATTE TIN |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Transistor Outline, Vertical |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
Where can I find the STP36NF06 datasheet?
STP36NF06 Datasheet DownloadOfficial datasheet from STMicroelectronics
What are equivalent replacements for STP36NF06?
Compatible alternatives and drop-in replacements for STP36NF06:
Power Field-Effect Transistor, 30A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Frequently Asked Questions
What continuous drain current and voltage rating does the STP36NF06 support in power switching designs?
The STP36NF06 is rated for 30 A continuous drain current and 60 V drain-source breakdown voltage, making it suitable for 24 V and 48 V bus motor drivers and DC-DC converters. The built-in body diode handles freewheeling currents in inductive loads without needing an external Schottky diode in many designs.
How does the STP36NF06 perform in high-frequency PWM motor control circuits?
With an RDS(on) of 40 mΩ maximum and a gate charge optimized for switching speeds compatible with 20 kHz to 100 kHz PWM frequencies, the STP36NF06 achieves low conduction and switching losses. In a 24 V, 30 A H-bridge at 20 kHz, estimated conduction power loss is approximately 36 W at full load, which is manageable with a standard TO-220AB heat sink.
When should a designer choose the STP36NF06 over the IRFZ44N for the same 60 V application?
The STP36NF06 offers a 200 mJ avalanche energy rating and 40 mΩ RDS(on), while the IRFZ44N is rated at 60 V with a similar current capability. In applications with significant inductive kickback or uncertain clamping—such as unregulated motor drives—the higher avalanche robustness of the STP36NF06 provides extra margin. Both share the TO-220AB footprint, so swapping is a direct PCB-compatible substitution.
What thermal management does the TO-220AB package of the STP36NF06 require at full load?
The TO-220AB package has a junction-to-case thermal resistance of approximately 1.5 °C/W. At 30 A with 40 mΩ RDS(on), conduction dissipation is about 36 W, requiring a heat sink with a thermal resistance below 2 °C/W to keep the junction below 150 °C at a 25 °C ambient. Standard clip-on or bolt-down aluminum heat sinks with thermal interface paste readily achieve this in bench and industrial environments.
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About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 2000+ | $0.4381 | $876.14 |
In Stock · 24h Response · Worldwide Shipping
Response within 24 hours · Worldwide shipping
“Their engineering team helped us find a pin-compatible alternative when our original MCU went EOL.”
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