STP36NF06 STMicroelectronics MOSFET (N-Channel) (Transistor Outline, Vertical) In Stock
STP36NF06 is an N-channel power MOSFET from STMicroelectronics in a TO-220AB package rated at 60 V and 30 A. Features 40 mΩ maximum RDS(on) and 200 mJ avalanche energy rating for robust switching. Available from stock with worldwide shipping.
- Manufacturer
- STMicroelectronics
- Package
- Transistor Outline, Vertical
- Pin Count
- 3
- Lifecycle
- OBSOLETE
- Datasheet
- STP36NF06 Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $0.4381(MOQ 2000)
- Temp Range
- ?°C to 175.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 60 V drain-source breakdown voltage with 30 A continuous drain current for high-power switching applications
- 40 mΩ maximum RDS(on) minimizes conduction losses and thermal dissipation in motor drive and DC-DC converter designs
- 200 mJ avalanche energy rating provides robust protection against inductive voltage spikes without external clamping
Applications
The STP36NF06 is widely used in DC motor control, synchronous rectification, and high-current load switching circuits where a 60 V, 30 A device is required. Its low 40 mΩ RDS(on) reduces conduction losses in PWM-driven H-bridge and half-bridge topologies, supporting efficient power conversion in industrial and automotive auxiliary systems. Battery chargers, solar MPPT controllers, and e-bike power stages also benefit from its high avalanche energy tolerance and TO-220AB through-hole package for heat-sink mounting.
Specifications
| Pbfree Code | Yes |
| YTEOL | 0 |
| Avalanche Energy Rating (Eas) | 200mJ |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 60V |
| Drain Current-Max (ID) | 30A |
| Drain-source On Resistance-Max | 0.04Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-220AB |
| JESD-30 Code | R-PSFM-T3 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 70W |
| Pulsed Drain Current-Max (IDM) | 120A |
| Qualification Status | Not Qualified |
| Surface Mount | NO |
| Terminal Finish | MATTE TIN |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Transistor Outline, Vertical |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
Alternate & Equivalent Parts
Compatible alternatives and drop-in replacements for STP36NF06:
Power Field-Effect Transistor, 30A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Frequently Asked Questions
What continuous drain current and voltage rating does the STP36NF06 support in power switching designs?
The STP36NF06 is rated for 30 A continuous drain current and 60 V drain-source breakdown voltage, making it suitable for 24 V and 48 V bus motor drivers and DC-DC converters. The built-in body diode handles freewheeling currents in inductive loads without needing an external Schottky diode in many designs.
How does the STP36NF06 perform in high-frequency PWM motor control circuits?
With an RDS(on) of 40 mΩ maximum and a gate charge optimized for switching speeds compatible with 20 kHz to 100 kHz PWM frequencies, the STP36NF06 achieves low conduction and switching losses. In a 24 V, 30 A H-bridge at 20 kHz, estimated conduction power loss is approximately 36 W at full load, which is manageable with a standard TO-220AB heat sink.
When should a designer choose the STP36NF06 over the IRFZ44N for the same 60 V application?
The STP36NF06 offers a 200 mJ avalanche energy rating and 40 mΩ RDS(on), while the IRFZ44N is rated at 60 V with a similar current capability. In applications with significant inductive kickback or uncertain clamping—such as unregulated motor drives—the higher avalanche robustness of the STP36NF06 provides extra margin. Both share the TO-220AB footprint, so swapping is a direct PCB-compatible substitution.
What thermal management does the TO-220AB package of the STP36NF06 require at full load?
The TO-220AB package has a junction-to-case thermal resistance of approximately 1.5 °C/W. At 30 A with 40 mΩ RDS(on), conduction dissipation is about 36 W, requiring a heat sink with a thermal resistance below 2 °C/W to keep the junction below 150 °C at a 25 °C ambient. Standard clip-on or bolt-down aluminum heat sinks with thermal interface paste readily achieve this in bench and industrial environments.
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| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 2000+ | $0.4381 | $876.14 |
In Stock · 24h Response · Worldwide Shipping
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