STP36NF06 STMicroelectronics MOSFET (N-Channel) (Transistor Outline, Vertical) In Stock

STP36NF06 is an N-channel power MOSFET from STMicroelectronics in a TO-220AB package rated at 60 V and 30 A. Features 40 mΩ maximum RDS(on) and 200 mJ avalanche energy rating for robust switching. Available from stock with worldwide shipping.

OBSOLETEMOSFET (N-Channel)Verified May 2026
Package / Visual Reference
STP36NF06Transistor Outline, Vertical
Quick Facts
Manufacturer
STMicroelectronics
Package
Transistor Outline, Vertical
Pin Count
3
Lifecycle
OBSOLETE
Category
MOSFET (N-Channel)
Price
From $0.4381(MOQ 2000)
Temp Range
?°C to 175.0°C
RoHS
Compliant
Lead Time
3–7 business days
Shipping
DHL Express · Worldwide

Key Features

  • 60 V drain-source breakdown voltage with 30 A continuous drain current for high-power switching applications
  • 40 mΩ maximum RDS(on) minimizes conduction losses and thermal dissipation in motor drive and DC-DC converter designs
  • 200 mJ avalanche energy rating provides robust protection against inductive voltage spikes without external clamping

Applications

The STP36NF06 is widely used in DC motor control, synchronous rectification, and high-current load switching circuits where a 60 V, 30 A device is required. Its low 40 mΩ RDS(on) reduces conduction losses in PWM-driven H-bridge and half-bridge topologies, supporting efficient power conversion in industrial and automotive auxiliary systems. Battery chargers, solar MPPT controllers, and e-bike power stages also benefit from its high avalanche energy tolerance and TO-220AB through-hole package for heat-sink mounting.

Specifications

Pbfree CodeYes
YTEOL0
Avalanche Energy Rating (Eas)200mJ
Case ConnectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min60V
Drain Current-Max (ID)30A
Drain-source On Resistance-Max0.04Ω
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 CodeTO-220AB
JESD-30 CodeR-PSFM-T3
JESD-609 Codee3
Number of Elements1
Operating ModeENHANCEMENT MODE
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleFLANGE MOUNT
Polarity/Channel TypeN-CHANNEL
Power Dissipation-Max (Abs)70W
Pulsed Drain Current-Max (IDM)120A
Qualification StatusNot Qualified
Surface MountNO
Terminal FinishMATTE TIN
Terminal FormTHROUGH-HOLE
Terminal PositionSINGLE
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
PackageTransistor Outline, Vertical

Compliance & Regulatory

RoHS StatusCompliant
Lead-FreeYes (Pb-Free)
ECCNEAR99

Datasheet

STP36NF06 Datasheet Download

Official datasheet from STMicroelectronics

Alternate & Equivalent Parts

Compatible alternatives and drop-in replacements for STP36NF06:

STP36NF06LSTMicroelectronics

Power Field-Effect Transistor, 30A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

View Part →

Frequently Asked Questions

What continuous drain current and voltage rating does the STP36NF06 support in power switching designs?

The STP36NF06 is rated for 30 A continuous drain current and 60 V drain-source breakdown voltage, making it suitable for 24 V and 48 V bus motor drivers and DC-DC converters. The built-in body diode handles freewheeling currents in inductive loads without needing an external Schottky diode in many designs.

How does the STP36NF06 perform in high-frequency PWM motor control circuits?

With an RDS(on) of 40 mΩ maximum and a gate charge optimized for switching speeds compatible with 20 kHz to 100 kHz PWM frequencies, the STP36NF06 achieves low conduction and switching losses. In a 24 V, 30 A H-bridge at 20 kHz, estimated conduction power loss is approximately 36 W at full load, which is manageable with a standard TO-220AB heat sink.

When should a designer choose the STP36NF06 over the IRFZ44N for the same 60 V application?

The STP36NF06 offers a 200 mJ avalanche energy rating and 40 mΩ RDS(on), while the IRFZ44N is rated at 60 V with a similar current capability. In applications with significant inductive kickback or uncertain clamping—such as unregulated motor drives—the higher avalanche robustness of the STP36NF06 provides extra margin. Both share the TO-220AB footprint, so swapping is a direct PCB-compatible substitution.

What thermal management does the TO-220AB package of the STP36NF06 require at full load?

The TO-220AB package has a junction-to-case thermal resistance of approximately 1.5 °C/W. At 30 A with 40 mΩ RDS(on), conduction dissipation is about 36 W, requiring a heat sink with a thermal resistance below 2 °C/W to keep the junction below 150 °C at a 25 °C ambient. Standard clip-on or bolt-down aluminum heat sinks with thermal interface paste readily achieve this in bench and industrial environments.

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About STMicroelectronics

STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.

AvailabilityIn Stock
Reference Price (USD)
From $0.4381
Buy from 1pc · Factory-direct pricing
Qty.Unit PriceExt. Price
2000+$0.4381$876.14
pcs
Unit price: $0.4381 · Total: $876.14

In Stock · 24h Response · Worldwide Shipping

Lead Time3-7 business days
MOQFrom 1 piece
ShippingDHL / FedEx / UPS
OriginChina (Authorized)

Response within 24 hours · Worldwide shipping

Their engineering team helped us find a pin-compatible alternative when our original MCU went EOL.

MR
Marco Rossi
CTO, AutoDrive Systems, Italy