STP10NK60ZFP STMicroelectronics MOSFET (N-Channel) (Transistor Outline, Vertical) In Stock

N-channel 600 V, 10 A SuperMESH Power MOSFET with 0.68 Ω typ. on-resistance and 300 mJ avalanche energy rating in TO-220FP package. Features low gate charge and fast switching for high-efficiency power conversion. Available in stock worldwide with competitive pricing and multiple package options.

ACTIVEMOSFET (N-Channel)Verified May 2026
Package / Visual Reference
STP10NK60ZFPTransistor Outline, Vertical
Quick Facts
Manufacturer
STMicroelectronics
Package
Transistor Outline, Vertical
Pin Count
3
Lifecycle
ACTIVE
Category
MOSFET (N-Channel)
Price
From $1.0400(MOQ 1)
Temp Range
?°C to 150.0°C
RoHS
Compliant
Lead Time
3–7 business days
Shipping
DHL Express · Worldwide

Key Features

  • 600 V breakdown voltage with 0.68 Ω typ. drain-source on-resistance enabling high-voltage switching with minimal conduction loss
  • SuperMESH technology delivers 300 mJ avalanche energy rating for robust rugged operation in demanding environments
  • Available in D2PAK, TO-220, TO-220FP, and TO-247 packages for flexible PCB design and thermal management

Applications

The STP10NK60ZFP is well suited for switch-mode power supplies (SMPS), motor drives, and industrial inverter stages operating at voltages up to 600 V. Its low on-resistance of 0.68 Ω and 10 A continuous drain current make it ideal for PFC boost converters and half-bridge topologies. The isolated TO-220FP package simplifies thermal design in compact power electronics assemblies.

Specifications

Factory Lead Time13Weeks
YTEOL5.9
Avalanche Energy Rating (Eas)300mJ
Case ConnectionISOLATED
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min600V
Drain Current-Max (ID)10A
Drain-source On Resistance-Max0.75Ω
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 CodeTO-220AB
JESD-30 CodeR-PSFM-T3
JESD-609 Codee3
Number of Elements1
Operating ModeENHANCEMENT MODE
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleFLANGE MOUNT
Peak Reflow Temperature (Cel)260
Polarity/Channel TypeN-CHANNEL
Power Dissipation-Max (Abs)35W
Pulsed Drain Current-Max (IDM)36A
Qualification StatusNot Qualified
Surface MountNO
Terminal FinishMatte Tin (Sn)
Terminal FormTHROUGH-HOLE
Terminal PositionSINGLE
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
PackageTransistor Outline, Vertical

Compliance & Regulatory

RoHS StatusCompliant
Lead-FreeYes (Pb-Free)
Moisture Sensitivity LevelMSL 1
ECCNEAR99
Country of OriginMainland China

Datasheet

STP10NK60ZFP Datasheet Download

Official datasheet from STMicroelectronics

Alternate & Equivalent Parts

Compatible alternatives and drop-in replacements for STP10NK60ZFP:

STP10NK80ZFPSTMicroelectronics

Power Field-Effect Transistor, 9A I(D), 800V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

View Part →
STP10NK70ZFPSTMicroelectronics

Power Field-Effect Transistor, 8.6A I(D), 700V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

View Part →
STP10NK80ZSTMicroelectronics

Power Field-Effect Transistor, 9A I(D), 800V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

View Part →

Frequently Asked Questions

What drain-source on-resistance does the STP10NK60ZFP exhibit at full load, and how does it affect conduction losses?

The STP10NK60ZFP has a typical drain-source on-resistance (RDS(on)) of 0.68 Ω and a maximum of 0.75 Ω measured at 10 A drain current. This low on-resistance minimizes I²R conduction losses in switching power supplies and motor drives operating at up to 600 V, helping maintain high converter efficiency across the full load range.

Which SMPS topologies benefit most from the STP10NK60ZFP avalanche energy rating of 300 mJ?

Flyback and boost PFC converters benefit most because unclamped inductive switching events are common in these topologies. The 300 mJ avalanche energy rating of the STP10NK60ZFP ensures the device survives voltage spikes exceeding 600 V during transformer leakage inductance discharge, reducing the need for external clamping circuits and improving system reliability.

How does the TO-220FP isolated package of the STP10NK60ZFP simplify thermal management compared to the standard TO-220?

The TO-220FP (Full-Pack) variant features an electrically isolated plastic body that eliminates the need for mica insulators or insulating pads between the MOSFET and a grounded heatsink, saving assembly time and reducing thermal resistance. This allows the heatsink to be mounted directly to a chassis at ground potential while the drain remains at high voltage, simplifying designs with multiple power switches in a 10 A, 600 V application.

Related Guides

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About STMicroelectronics

STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.

AvailabilityIn Stock
Reference Price (USD)
From $1.0400
Buy from 1pc · Factory-direct pricing
Qty.Unit PriceExt. Price
1+$1.1074$1.11
2000+$1.0900$2180.00
5000+$1.0400$5200.00
pcs
Unit price: $1.1074 · Total: $1.11

In Stock · 24h Response · Worldwide Shipping

Lead Time3-7 business days
MOQFrom 1 piece
ShippingDHL / FedEx / UPS
OriginChina (Authorized)

Response within 24 hours · Worldwide shipping

Their engineering team helped us find a pin-compatible alternative when our original MCU went EOL.

MR
Marco Rossi
CTO, AutoDrive Systems, Italy