STP10NK60ZFP STMicroelectronics MOSFET (N-Channel) (Transistor Outline, Vertical) In Stock
N-channel 600 V, 10 A SuperMESH Power MOSFET with 0.68 Ω typ. on-resistance and 300 mJ avalanche energy rating in TO-220FP package. Features low gate charge and fast switching for high-efficiency power conversion. Available in stock worldwide with competitive pricing and multiple package options.
- Manufacturer
- STMicroelectronics
- Package
- Transistor Outline, Vertical
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- STP10NK60ZFP Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $1.0400(MOQ 1)
- Temp Range
- ?°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of STP10NK60ZFP?
- 600 V breakdown voltage with 0.68 Ω typ. drain-source on-resistance enabling high-voltage switching with minimal conduction loss
- SuperMESH technology delivers 300 mJ avalanche energy rating for robust rugged operation in demanding environments
- Available in D2PAK, TO-220, TO-220FP, and TO-247 packages for flexible PCB design and thermal management
What is STP10NK60ZFP used for?
The STP10NK60ZFP is well suited for switch-mode power supplies (SMPS), motor drives, and industrial inverter stages operating at voltages up to 600 V. Its low on-resistance of 0.68 Ω and 10 A continuous drain current make it ideal for PFC boost converters and half-bridge topologies. The isolated TO-220FP package simplifies thermal design in compact power electronics assemblies.
What are the specifications of STP10NK60ZFP?
| Factory Lead Time | 13Weeks |
| YTEOL | 5.9 |
| Avalanche Energy Rating (Eas) | 300mJ |
| Case Connection | ISOLATED |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 600V |
| Drain Current-Max (ID) | 10A |
| Drain-source On Resistance-Max | 0.75Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-220AB |
| JESD-30 Code | R-PSFM-T3 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 35W |
| Pulsed Drain Current-Max (IDM) | 36A |
| Qualification Status | Not Qualified |
| Surface Mount | NO |
| Terminal Finish | Matte Tin (Sn) |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Transistor Outline, Vertical |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 1 |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Where can I find the STP10NK60ZFP datasheet?
STP10NK60ZFP Datasheet DownloadOfficial datasheet from STMicroelectronics
What are equivalent replacements for STP10NK60ZFP?
Compatible alternatives and drop-in replacements for STP10NK60ZFP:
suggested
suggested
suggested
suggested
suggested
Power Field-Effect Transistor, 9A I(D), 800V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Power Field-Effect Transistor, 8.6A I(D), 700V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Power Field-Effect Transistor, 9A I(D), 800V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Frequently Asked Questions
What drain-source on-resistance does the STP10NK60ZFP exhibit at full load, and how does it affect conduction losses?
The STP10NK60ZFP has a typical drain-source on-resistance (RDS(on)) of 0.68 Ω and a maximum of 0.75 Ω measured at 10 A drain current. This low on-resistance minimizes I²R conduction losses in switching power supplies and motor drives operating at up to 600 V, helping maintain high converter efficiency across the full load range.
Which SMPS topologies benefit most from the STP10NK60ZFP avalanche energy rating of 300 mJ?
Flyback and boost PFC converters benefit most because unclamped inductive switching events are common in these topologies. The 300 mJ avalanche energy rating of the STP10NK60ZFP ensures the device survives voltage spikes exceeding 600 V during transformer leakage inductance discharge, reducing the need for external clamping circuits and improving system reliability.
How does the TO-220FP isolated package of the STP10NK60ZFP simplify thermal management compared to the standard TO-220?
The TO-220FP (Full-Pack) variant features an electrically isolated plastic body that eliminates the need for mica insulators or insulating pads between the MOSFET and a grounded heatsink, saving assembly time and reducing thermal resistance. This allows the heatsink to be mounted directly to a chassis at ground potential while the drain remains at high voltage, simplifying designs with multiple power switches in a 10 A, 600 V application.
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Why Buy from FindMyChip
About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.1074 | $1.11 |
| 2000+ | $1.0900 | $2180.00 |
| 5000+ | $1.0400 | $5200.00 |
In Stock · 24h Response · Worldwide Shipping
Response within 24 hours · Worldwide shipping
“Their engineering team helped us find a pin-compatible alternative when our original MCU went EOL.”
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