ON Semiconductor
ON Semiconductor (onsemi) provides intelligent power and sensing technologies for automotive, industrial, IoT, and cloud infrastructure applications.
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All ON Semiconductor Components
Showing 351–400 of 4,313
Low Clamping Voltage; Small Body Outline Dimensions on SC88 Package:0.082 x 0.078 (2.10 mm x 1.25 mm); Low Body Height: 0.043 (1.10 mm); Standoff Voltage: 5.5 V; Low Leakage; Response Time is Typically < 1.0 ns; IEC6100042 Level 4 ESD Protection; These Devices are PbFree and are RoHS Compliant; AECQ101 Qualified and PPAP Capable for SZNUP4114; Meets UL 94 V-0; SZ prefix for automotive and other applications requiring unique site and control change requirements
Low Clamping Voltage; Small Body Outline Dimensions on SC88 Package:0.082 x 0.078 (2.10 mm x 1.25 mm); Low Body Height: 0.043 (1.10 mm); Standoff Voltage: 5.5 V; Low Leakage; Response Time is Typically < 1.0 ns; IEC6100042 Level 4 ESD Protection; These Devices are PbFree and are RoHS Compliant; AECQ101 Qualified and PPAP Capable for SZNUP4114; Meets UL 94 V-0; SZ prefix for automotive and other applications requiring unique site and control change requirements
Low Clamping Voltage; Small Body Outline Dimensions on SC88 Package:0.082 x 0.078 (2.10 mm x 1.25 mm); Low Body Height: 0.043 (1.10 mm); Standoff Voltage: 5.5 V; Low Leakage; Response Time is Typically < 1.0 ns; IEC6100042 Level 4 ESD Protection; These Devices are PbFree and are RoHS Compliant; AECQ101 Qualified and PPAP Capable for SZNUP4114; Meets UL 94 V-0; SZ prefix for automotive and other applications requiring unique site and control change requirements
Low Clamping Voltage; Small Body Outline Dimensions on SC88 Package:0.082 x 0.078 (2.10 mm x 1.25 mm); Low Body Height: 0.043 (1.10 mm); Standoff Voltage: 5.5 V; Low Leakage; Response Time is Typically < 1.0 ns; IEC6100042 Level 4 ESD Protection; These Devices are PbFree and are RoHS Compliant; AECQ101 Qualified and PPAP Capable for SZNUP4114; Meets UL 94 V-0; SZ prefix for automotive and other applications requiring unique site and control change requirements
Low Capacitance (2.0 pF Max Between I/O Lines; Single Package Integration Design; Provides ESD Protection for JEDEC Standards JESD22; Protection for IEC61000-4-2 (Level 4); Ensures Data Line Speed and Integrity; Directs the Transient to Either Positive Side or to Ground; AEC-Q101 Qualified and PPAP Capable; SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements
Provides Robust Interface between D.C. Relay Coils and Sensitive Logic; Capable of Driving Relay Coils Rated up to 150 mA at 12 Volts; Replaces 3 or 4 Discrete Components for Lower Cost; Internal Zener Eliminates Need for Free-Wheeling Diode; Meets Load Dump and other Automotive Specs
1 X 1 MM, LEAD FREE, ULTRA SMALL, CASE 527AD-01, 6 PIN
1 X 1 MM, LEAD FREE, ULTRA SMALL, CASE 527AD-01, 6 PIN
Low RDSon; Low Capacitance; Optimized Gate Charge
Use the download button to access the NTMFS4936NT1G schematic symbol, PCB footprint, and 3D model.
Low Qg and Capacitance; Low Profile UDFN 1.6x1.6x0.55 mm; Low Vf Schottky Diode; Lead Free and Halide Free; ESD Protected Gate
Mosfet Array 30V 2.5A 710mW Surface Mount 6-WDFN (2x2)-55°C ~ 150°C (TJ)
Use the download button to access the NTK3139PT1G schematic symbol, PCB footprint, and 3D model.
SC-88, SC-70-6, 6 PIN
SC-88, SC-70-6, 6 PIN
Ultra Low RDS(on); Higher Efficiency Extending Battery Life; Logic Level Gate Drive; Diode Exhibits High Speed, Soft Recovery; Avalanche Energy Specified; IDSS Specified at Elevated Temperature
TSOP-6
Obsolete - Single P-Channel Power MOSFET -60V -18.5A 140 mΩ
The ON Semiconductor NTB45N06LT4G is a logic-level N-channel power MOSFET rated at 45 A and 60 V in a D2PAK (TO-263) surface-mount package with a built-in body diode and 240 mJ avalanche energy rating. Its low gate threshold enables direct switching from 3.3 V or 5 V microcontroller GPIO pins without a dedicated gate driver in many designs. Available through global distributors with fast worldwide shipping for prototyping and volume production.
Use the download button to access the NTA4151PT1G schematic symbol, PCB footprint, and 3D model.
High Current, Low VCEsat, ESD Robust, High Current Gain, High Cut Off Frequency, Low Profile Package, Linear Gain (Beta); NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable
Gain matched to 10%, Typical 2%; Vbe matched to 2.0 mV typical 0.5 mV; AEC-Q101 Qualified and PPAP Capable; NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
Low Collector-Emitter Saturation Voltage; High DC Current Gain; High Current-Gain Bandwidth Product; Superior gain linearity; NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable; These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant
CASE 631AA-01, 3 PIN
Very Low Forward Voltage Drop - 410 mV @ 100 mA; Low Reverse Current - 0.5 uA @ 25 V VR; 250 mA of Continuous Forward Current; Power Dissipation of 200 mW with Minimum Trace; Very High Switching Speed; Low Capacitance - CT = 6 pF; This is a Pb-Free Device
Fine Lithography Trench−based Schottky Technology for Very Low; Forward Voltage and Low Leakage; Fast Switching with Exceptional Temperature Stability; Low Power Loss and Lower Operating Temperature; Higher Efficiency for Achieving Regulatory Compliance; Low Thermal Resistance; High Surge Capability; NRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; These are Pb−Free and Halide−Free Devices
Small Compact Surface Mountable Package with J-Bend Leads; Rectangular Package for Automated Handling; Highly Stable Oxide Passivated Junction; Excellent Ability to Withstand Reverse Avalanche Energy Transients; Guardring for Stress Protection Mechanical Characteristics:; Case: Epoxy, Molded, Epoxy Meets UL94, VO; Weight: 217 mg (approximately); Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Lead and Mounting Surface Temperature for Soldering Purposes: 260 C Max
Use the download button to access the NRVBA1H100T3G schematic symbol, PCB footprint, and 3D model.
Compact Package with J-Bend Leads Ideal for Automated Handling; Stable, High Temperature, Glass Passivated Junction Mechanical Characteristics:; Case: Molded Epoxy Epoxy meets UL94, VO at 1/8"; Weight: 70 mg (Approximately); Finish: All External Surfaces are Corrosion Resistant and Terminal Leads are Readily Solderable; Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 seconds in Solder Bath; Polarity: Notch and Band in Plastic Body Indicates Cathode Lead; Available in 12 mm Ta
SOP-8
ON Semiconductor NLU2G17CMX1TCG, Dual, Schmitt Trigger Buffer, CMOS, Non-Inverting, 1.65 → 5.5 V, 6-Pin ULLGA
QFN-12
US-8
Designed for 1.65 V to 5.5 V Vcc Operation; High Speed: tPD = 3.2 ns (Typ) @ VCC = 5.0 V; Low Power Dissipation: ICC = 1 A (Maximum) at TA = 25C; Power Down Protection Provided on inputs; Balanced Propagation Delays; Overvoltage Tolerant (OVT) Input and Output Pins; Ultra-Small Package; This is a Pb-Free Device
Extremely High Speed: tPD 2.5 ns (typical) at VCC = 5 V; Designed for 1.65 V to 5.5 V VCC Operation; Over Voltage Tolerant Inputs, Outputs; LVTTL Compatible – Interface Capability with 5 V TTL Logic with VCC = 3 V; LVCMOS Compatible; 24 mA Output Sink Capability; Near Zero Static Supply Current Substantially Reduces System Power Requirements; Chip Complexity: FET = 72; Pb-Free Package is Available
Designed for 1.65 V to 5.5 V VCC Operation; Extremely High Speed: tPD 2.0 ns (typical) at VCC = 5 V; Over Voltage Tolerant Inputs and Outputs; LVTTL Compatible – Interface Capability With 5 V TTL Logic with VCC = 3 V; LVCMOS Compatible; 24 mA Balanced Output Sink and Source Capability; Near Zero Static Supply Current Substantially Reduces System Power Requirements; Chip Complexity: FETs = 72
ON Semiconductor NL27WZ16DTT1G, Dual, Buffer, CMOS, Single Ended, 1.65 → 5.5 V, 6-Pin TSOP
Designed for 1.65 V to 5.5 V VCC Operation; Over Voltage Tolerant Inputs and Outputs; LVTTL Compatible - Interface Capability with 5 V TTL Logic with VCC=3 V; LVCMOS Compatible; 24 mA Balanced Output Sink and Source Capability; Near Zero Static Supply Current (10 ?A) Substantially Reduces System Power Requirements; Current Drive Capability is 24 mA at the Outputs; Chip Complexity: FET = 72; Pb-Free Packages are Available
Tiny SOT-353 and SOT-553 Packages; 2.4 ns TPD at 5 Volts (typ); Source/Sink 24 mA at 3.0 Volts; Over-Voltage Tolerant Inputs and Outputs; Pin For Pin with NC7SZ32P5X, TC7SZ32FU, and TC7SZ32AFE; Chip Complexity: FETs = <100; Designed for 1.65 V to 5.5 V VCC; Pb-Free Packages are Available; Designed for 1.65 V to 5.5 V Vcc Operation
Wide Operating Vcc Range; Tiny SC70-5/SC-88A Package; Source/Sink 24 mA at 3.0 Volts; Over-Voltage Tolerant Inputs and Outputs; Chip Complexity: FETs = 20; Designed for 1.65 V to 5.5 V VCC; Pb-Free Packages are Available
Tiny SOT-353 and SOT-553 Packages; 2.7 ns TPD at 5 Volts (typ); Source/Sink 24 mA at 3.0 Volts; Over-voltage tolerant Inputs; Pin For Pin with NC7SZ08P5X, TC7SZ08FU and TC7SZ08AFE; Chip Complexity: FETs = 20; Designed for 1.65 V to 5.5 V VCC operation; Pb-Free Packages are Available; Wide Operating Vcc Range
Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix); Lead Formed Version in 16 mm Tape and Reel ("T4G" Suffix); Electrically Similar to Popular TIP31 and TIP32 Series; NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable; These Devices are Pb−Free and are RoHS Compliant
Obsolete - IGBT, 1350V 30A with Monolithic Free Wheeling Diode.
120 MHz Unity Gain Bandwidth; Adjustable Gains from 0 to 400; Adjustable Pass Band; No Frequency Compensation Required; Wave Shaping with Minimal External Components; MIL-STD Processing Available
120 MHz Unity Gain Bandwidth; Adjustable Gains from 0 to 400; Adjustable Pass Band; No Frequency Compensation Required; Wave Shaping with Minimal External Components; MIL-STD Processing Available
N-Channel Power MOSFET, 1500V, 9A, 3.0Ω
Obsolete - Power MOSFET 600V 11A 360 mOhm Single N-Channel DPAK
DPAK-3/2
DPAK-3/2
Last Shipments - LDO Regulator, 500 mA, Low Dropout
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