ON Semiconductor

ON Semiconductor

ON Semiconductor (onsemi) provides intelligent power and sensing technologies for automotive, industrial, IoT, and cloud infrastructure applications.

4,313

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All ON Semiconductor Components

Showing 351400 of 4,313

NUP4114UPXV6T1GSO Transistor Flat Lead
NUP4114UPXV6T1GTVS Diode (Uni-directional)

Low Clamping Voltage; Small Body Outline Dimensions on SC88 Package:0.082 x 0.078 (2.10 mm x 1.25 mm); Low Body Height: 0.043 (1.10 mm); Standoff Voltage: 5.5 V; Low Leakage; Response Time is Typically < 1.0 ns; IEC6100042 Level 4 ESD Protection; These Devices are PbFree and are RoHS Compliant; AECQ101 Qualified and PPAP Capable for SZNUP4114; Meets UL 94 V-0; SZ prefix for automotive and other applications requiring unique site and control change requirements

NUP4114UCW1T2GOther
NUP4114UCW1T2GDiode ESD (Uni-directional)

Low Clamping Voltage; Small Body Outline Dimensions on SC88 Package:0.082 x 0.078 (2.10 mm x 1.25 mm); Low Body Height: 0.043 (1.10 mm); Standoff Voltage: 5.5 V; Low Leakage; Response Time is Typically < 1.0 ns; IEC6100042 Level 4 ESD Protection; These Devices are PbFree and are RoHS Compliant; AECQ101 Qualified and PPAP Capable for SZNUP4114; Meets UL 94 V-0; SZ prefix for automotive and other applications requiring unique site and control change requirements

NUP4114UCLW1T2GSOT23 (6-Pin)
NUP4114UCLW1T2GDiode

Low Clamping Voltage; Small Body Outline Dimensions on SC88 Package:0.082 x 0.078 (2.10 mm x 1.25 mm); Low Body Height: 0.043 (1.10 mm); Standoff Voltage: 5.5 V; Low Leakage; Response Time is Typically < 1.0 ns; IEC6100042 Level 4 ESD Protection; These Devices are PbFree and are RoHS Compliant; AECQ101 Qualified and PPAP Capable for SZNUP4114; Meets UL 94 V-0; SZ prefix for automotive and other applications requiring unique site and control change requirements

NUP4114HMR6T1GSOT23 (6-Pin)
NUP4114HMR6T1GTVS Diode (Uni-directional)

Low Clamping Voltage; Small Body Outline Dimensions on SC88 Package:0.082 x 0.078 (2.10 mm x 1.25 mm); Low Body Height: 0.043 (1.10 mm); Standoff Voltage: 5.5 V; Low Leakage; Response Time is Typically < 1.0 ns; IEC6100042 Level 4 ESD Protection; These Devices are PbFree and are RoHS Compliant; AECQ101 Qualified and PPAP Capable for SZNUP4114; Meets UL 94 V-0; SZ prefix for automotive and other applications requiring unique site and control change requirements

NUP2301MW6T1GSOT23 (6-Pin)
NUP2301MW6T1GTVS Diode (Bi-directional)

Low Capacitance (2.0 pF Max Between I/O Lines; Single Package Integration Design; Provides ESD Protection for JEDEC Standards JESD22; Protection for IEC61000-4-2 (Level 4); Ensures Data Line Speed and Integrity; Directs the Transient to Either Positive Side or to Ground; AEC-Q101 Qualified and PPAP Capable; SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements

NUD3124LT1GSOT23 (3-Pin)
NUD3124LT1GUndefined or Miscellaneous

Provides Robust Interface between D.C. Relay Coils and Sensitive Logic; Capable of Driving Relay Coils Rated up to 150 mA at 12 Volts; Replaces 3 or 4 Discrete Components for Lower Cost; Internal Zener Eliminates Need for Free-Wheeling Diode; Meets Load Dump and other Automotive Specs

NTUD3170NZT5GSO Transistor Flat Lead
NTUD3170NZT5GTransistor

1 X 1 MM, LEAD FREE, ULTRA SMALL, CASE 527AD-01, 6 PIN

NTUD3169CZT5GSO Transistor Flat Lead
NTUD3169CZT5GTransistor

1 X 1 MM, LEAD FREE, ULTRA SMALL, CASE 527AD-01, 6 PIN

NTMFS4C06NT1GOther
NTMFS4C06NT1GMOSFET (N-Channel)

Low RDSon; Low Capacitance; Optimized Gate Charge

NTMFS4936NT1GOther
NTMFS4936NT1GMOSFET (N-Channel)

Use the download button to access the NTMFS4936NT1G schematic symbol, PCB footprint, and 3D model.

NTLUF4189NZTAGOther
NTLUF4189NZTAGMOSFET (N-Channel)

Low Qg and Capacitance; Low Profile UDFN 1.6x1.6x0.55 mm; Low Vf Schottky Diode; Lead Free and Halide Free; ESD Protected Gate

NTLJD4116NT1GOther
NTLJD4116NT1GTransistor

Mosfet Array 30V 2.5A 710mW Surface Mount 6-WDFN (2x2)-55°C ~ 150°C (TJ)

NTK3139PT1GSO Transistor Flat Lead
NTK3139PT1GTransistor

Use the download button to access the NTK3139PT1G schematic symbol, PCB footprint, and 3D model.

NTJS4151PT1GSOT23 (6-Pin)
NTJS4151PT1GMOSFET (P-Channel)

SC-88, SC-70-6, 6 PIN

NTJS3151PT1GSOT23 (6-Pin)
NTJS3151PT1GMOSFET (P-Channel)

SC-88, SC-70-6, 6 PIN

NTGS3446T1GSOT23 (6-Pin)
NTGS3446T1GMOSFET (N-Channel)

Ultra Low RDS(on); Higher Efficiency Extending Battery Life; Logic Level Gate Drive; Diode Exhibits High Speed, Soft Recovery; Avalanche Energy Specified; IDSS Specified at Elevated Temperature

NTGS3136PT1GSOT23 (6-Pin)
NTGS3136PT1GTransistor

TSOP-6

NTB5426NT4GOther
NTB5426NT4GMOSFET (N-Channel)

Obsolete - Single P-Channel Power MOSFET -60V -18.5A 140 mΩ

NTB45N06LT4GOther
NTB45N06LT4GMOSFET (N-Channel)

The ON Semiconductor NTB45N06LT4G is a logic-level N-channel power MOSFET rated at 45 A and 60 V in a D2PAK (TO-263) surface-mount package with a built-in body diode and 240 mJ avalanche energy rating. Its low gate threshold enables direct switching from 3.3 V or 5 V microcontroller GPIO pins without a dedicated gate driver in many designs. Available through global distributors with fast worldwide shipping for prototyping and volume production.

NTA4151PT1GSOT23 (3-Pin)
NTA4151PT1GMOSFET (P-Channel)

Use the download button to access the NTA4151PT1G schematic symbol, PCB footprint, and 3D model.

NSV40200LT1GSOT23 (3-Pin)
NSV40200LT1GTransistor BJT PNP

High Current, Low VCEsat, ESD Robust, High Current Gain, High Cut Off Frequency, Low Profile Package, Linear Gain (Beta); NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable

NST45011MW6T1GSmall Outline Packages
NST45011MW6T1GTransistor

Gain matched to 10%, Typical 2%; Vbe matched to 2.0 mV typical 0.5 mV; AEC-Q101 Qualified and PPAP Capable; NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

NSS60600MZ4T1GSOT223 (3-Pin)
NSS60600MZ4T1GTransistor BJT PNP

Low Collector-Emitter Saturation Voltage; High DC Current Gain; High Current-Gain Bandwidth Product; Superior gain linearity; NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable; These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant

NSS12100M3T5GSO Transistor Flat Lead
NSS12100M3T5GTransistor BJT PNP

CASE 631AA-01, 3 PIN

NSR0340V2T1GSmall Outline Diode Flat Lead
NSR0340V2T1GSchottky Diode

Very Low Forward Voltage Drop - 410 mV @ 100 mA; Low Reverse Current - 0.5 uA @ 25 V VR; 250 mA of Continuous Forward Current; Power Dissipation of 200 mW with Minimum Trace; Very High Switching Speed; Low Capacitance - CT = 6 pF; This is a Pb-Free Device

NRVTS245ESFT1GSmall Outline Diode Flat Lead
NRVTS245ESFT1GSchottky Diode

Fine Lithography Trench−based Schottky Technology for Very Low; Forward Voltage and Low Leakage; Fast Switching with Exceptional Temperature Stability; Low Power Loss and Lower Operating Temperature; Higher Efficiency for Achieving Regulatory Compliance; Low Thermal Resistance; High Surge Capability; NRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; These are Pb−Free and Halide−Free Devices

NRVBS360T3GDiodes Moulded
NRVBS360T3GDiode

Small Compact Surface Mountable Package with J-Bend Leads; Rectangular Package for Automated Handling; Highly Stable Oxide Passivated Junction; Excellent Ability to Withstand Reverse Avalanche Energy Transients; Guardring for Stress Protection Mechanical Characteristics:; Case: Epoxy, Molded, Epoxy Meets UL94, VO; Weight: 217 mg (approximately); Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Lead and Mounting Surface Temperature for Soldering Purposes: 260 C Max

NRVBA1H100T3GDiodes Moulded
NRVBA1H100T3GSchottky Diode

Use the download button to access the NRVBA1H100T3G schematic symbol, PCB footprint, and 3D model.

NRVA4004T3GDiodes Moulded
NRVA4004T3GDiode

Compact Package with J-Bend Leads Ideal for Automated Handling; Stable, High Temperature, Glass Passivated Junction Mechanical Characteristics:; Case: Molded Epoxy Epoxy meets UL94, VO at 1/8"; Weight: 70 mg (Approximately); Finish: All External Surfaces are Corrosion Resistant and Terminal Leads are Readily Solderable; Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 seconds in Solder Bath; Polarity: Notch and Band in Plastic Body Indicates Cathode Lead; Available in 12 mm Ta

NLV17SZ74USGSmall Outline Packages
NLV17SZ74USGIntegrated Circuit

SOP-8

NLU2G17CMX1TCGOther
NLU2G17CMX1TCGIntegrated Circuit

ON Semiconductor NLU2G17CMX1TCG, Dual, Schmitt Trigger Buffer, CMOS, Non-Inverting, 1.65 → 5.5 V, 6-Pin ULLGA

NLAS3158MNR2GSmall Outline No-lead
NLAS3158MNR2GIntegrated Circuit

QFN-12

NL7WB66USGSmall Outline Packages
NL7WB66USGIntegrated Circuit

US-8

NL7SZ57DFT2GSOT23 (6-Pin)
NL7SZ57DFT2GIntegrated Circuit

Designed for 1.65 V to 5.5 V Vcc Operation; High Speed: tPD = 3.2 ns (Typ) @ VCC = 5.0 V; Low Power Dissipation: ICC = 1 A (Maximum) at TA = 25C; Power Down Protection Provided on inputs; Balanced Propagation Delays; Overvoltage Tolerant (OVT) Input and Output Pins; Ultra-Small Package; This is a Pb-Free Device

NL37WZ07USGSmall Outline Packages
NL37WZ07USGIntegrated Circuit

Extremely High Speed: tPD 2.5 ns (typical) at VCC = 5 V; Designed for 1.65 V to 5.5 V VCC Operation; Over Voltage Tolerant Inputs, Outputs; LVTTL Compatible – Interface Capability with 5 V TTL Logic with VCC = 3 V; LVCMOS Compatible; 24 mA Output Sink Capability; Near Zero Static Supply Current Substantially Reduces System Power Requirements; Chip Complexity: FET = 72; Pb-Free Package is Available

NL37WZ04USGSmall Outline Packages
NL37WZ04USGIntegrated Circuit

Designed for 1.65 V to 5.5 V VCC Operation; Extremely High Speed: tPD 2.0 ns (typical) at VCC = 5 V; Over Voltage Tolerant Inputs and Outputs; LVTTL Compatible – Interface Capability With 5 V TTL Logic with VCC = 3 V; LVCMOS Compatible; 24 mA Balanced Output Sink and Source Capability; Near Zero Static Supply Current Substantially Reduces System Power Requirements; Chip Complexity: FETs = 72

NL27WZ16DTT1GSOT23 (6-Pin)
NL27WZ16DTT1GIntegrated Circuit

ON Semiconductor NL27WZ16DTT1G, Dual, Buffer, CMOS, Single Ended, 1.65 → 5.5 V, 6-Pin TSOP

NL27WZ14DFT2GSOT23 (6-Pin)
NL27WZ14DFT2GIntegrated Circuit

Designed for 1.65 V to 5.5 V VCC Operation; Over Voltage Tolerant Inputs and Outputs; LVTTL Compatible - Interface Capability with 5 V TTL Logic with VCC=3 V; LVCMOS Compatible; 24 mA Balanced Output Sink and Source Capability; Near Zero Static Supply Current (10 ?A) Substantially Reduces System Power Requirements; Current Drive Capability is 24 mA at the Outputs; Chip Complexity: FET = 72; Pb-Free Packages are Available

NL17SZ32XV5T2GOther
NL17SZ32XV5T2GIntegrated Circuit

Tiny SOT-353 and SOT-553 Packages; 2.4 ns TPD at 5 Volts (typ); Source/Sink 24 mA at 3.0 Volts; Over-Voltage Tolerant Inputs and Outputs; Pin For Pin with NC7SZ32P5X, TC7SZ32FU, and TC7SZ32AFE; Chip Complexity: FETs = <100; Designed for 1.65 V to 5.5 V VCC; Pb-Free Packages are Available; Designed for 1.65 V to 5.5 V Vcc Operation

NL17SZ17XV5T2GSO Transistor Flat Lead
NL17SZ17XV5T2GIntegrated Circuit

Wide Operating Vcc Range; Tiny SC70-5/SC-88A Package; Source/Sink 24 mA at 3.0 Volts; Over-Voltage Tolerant Inputs and Outputs; Chip Complexity: FETs = 20; Designed for 1.65 V to 5.5 V VCC; Pb-Free Packages are Available

NL17SZ08XV5T2GSO Transistor Flat Lead
NL17SZ08XV5T2GIntegrated Circuit

Tiny SOT-353 and SOT-553 Packages; 2.7 ns TPD at 5 Volts (typ); Source/Sink 24 mA at 3.0 Volts; Over-voltage tolerant Inputs; Pin For Pin with NC7SZ08P5X, TC7SZ08FU and TC7SZ08AFE; Chip Complexity: FETs = 20; Designed for 1.65 V to 5.5 V VCC operation; Pb-Free Packages are Available; Wide Operating Vcc Range

NJVMJD32CT4GOther
NJVMJD32CT4GTransistor BJT PNP

Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix); Lead Formed Version in 16 mm Tape and Reel ("T4G" Suffix); Electrically Similar to Popular TIP31 and TIP32 Series; NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable; These Devices are Pb−Free and are RoHS Compliant

NGTB30N120LWGTransistor Outline, Vertical
NGTB30N120LWGTransistor IGBT

Obsolete - IGBT, 1350V 30A with Monolithic Free Wheeling Diode.

NE592D8R2GSmall Outline Packages
NE592D8R2GIntegrated Circuit

120 MHz Unity Gain Bandwidth; Adjustable Gains from 0 to 400; Adjustable Pass Band; No Frequency Compensation Required; Wave Shaping with Minimal External Components; MIL-STD Processing Available

NE592D14R2GSmall Outline Packages
NE592D14R2GIntegrated Circuit

120 MHz Unity Gain Bandwidth; Adjustable Gains from 0 to 400; Adjustable Pass Band; No Frequency Compensation Required; Wave Shaping with Minimal External Components; MIL-STD Processing Available

NDUL09N150CGTransistor Outline, Vertical
NDUL09N150CGMOSFET (N-Channel)

N-Channel Power MOSFET, 1500V, 9A, 3.0Ω

NDD05N50ZT4GOther
NDD05N50ZT4GMOSFET (N-Channel)

Obsolete - Power MOSFET 600V 11A 360 mOhm Single N-Channel DPAK

NDD03N50ZT4GOther
NDD03N50ZT4GMOSFET (N-Channel)

DPAK-3/2

NDD02N60ZT4GOther
NDD02N60ZT4GMOSFET (N-Channel)

DPAK-3/2

NCV8606MN28T2GOther
NCV8606MN28T2GIntegrated Circuit

Last Shipments - LDO Regulator, 500 mA, Low Dropout

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