NTB45N06LT4G ON Semiconductor MOSFET (N-Channel) (Other) In Stock
The ON Semiconductor NTB45N06LT4G is a logic-level N-channel power MOSFET rated at 45 A and 60 V in a D2PAK (TO-263) surface-mount package with a built-in body diode and 240 mJ avalanche energy rating. Its low gate threshold enables direct switching from 3.3 V or 5 V microcontroller GPIO pins without a dedicated gate driver in many designs. Available through global distributors with fast worldwide shipping for prototyping and volume production.
- Manufacturer
- ON Semiconductor
- Package
- Other
- Pin Count
- 3
- Lifecycle
- OBSOLETE
- Datasheet
- NTB45N06LT4G Datasheet PDF
- Category
- MOSFET (N-Channel)
- Temp Range
- ?°C to 175.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of NTB45N06LT4G?
- Logic-level gate compatibility with VGS(th) typically below 2.5 V enables direct drive from 3.3 V or 5 V microcontroller GPIO pins without a gate driver IC
- 45 A drain current and 60 V breakdown voltage in a compact D2PAK (TO-263) SMT package for high-power switching applications
- 240 mJ avalanche energy rating (Eas) provides robust protection against inductive voltage spikes in motor drive and DC-DC converter circuits
What is NTB45N06LT4G used for?
The NTB45N06LT4G is well-suited for motor control circuits, DC-DC converters, and load switches where logic-level drive and a 45 A, 60 V rating in a D2PAK package meet automotive-adjacent and industrial power requirements. Its built-in body diode and 240 mJ avalanche energy rating provide resilience in inductive switching environments such as solenoid drivers and battery management systems. Logic-level compatibility simplifies gate drive design in microcontroller-based embedded systems operating from 3.3 V or 5 V supply rails.
What are the specifications of NTB45N06LT4G?
| Pbfree Code | Yes |
| Manufacturer Package Code | 418B-04 |
| Factory Lead Time | 2Days |
| YTEOL | 0 |
| Additional Feature | LOGIC LEVEL COMPATIBLE |
| Avalanche Energy Rating (Eas) | 240mJ |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 60V |
| Drain Current-Max (ID) | 45A |
| Drain-source On Resistance-Max | 0.028Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code | R-PSSO-G2 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 2.4W |
| Pulsed Drain Current-Max (IDM) | 150A |
| Qualification Status | Not Qualified |
| Surface Mount | YES |
| Terminal Finish | MATTE TIN |
| Terminal Form | GULL WING |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 1 |
| ECCN | EAR99 |
Where can I find the NTB45N06LT4G datasheet?
NTB45N06LT4G Datasheet DownloadOfficial datasheet from ON Semiconductor
What are equivalent replacements for NTB45N06LT4G?
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
Can a 3.3 V microcontroller GPIO directly switch the NTB45N06LT4G without a dedicated gate driver?
Yes, the NTB45N06LT4G is logic-level compatible with a gate threshold voltage (VGS(th)) typically below 2.5 V, allowing 3.3 V or 5 V microcontroller GPIO outputs to fully enhance the MOSFET. This enables the 45 A, 60 V N-channel device in D2PAK to handle substantial power loads in embedded motor control and load switch designs without additional gate driver circuitry.
How does the NTB45N06LT4G's avalanche rating protect inductive load circuits from voltage spikes?
The NTB45N06LT4G is rated for 240 mJ of single-pulse avalanche energy (Eas), allowing it to absorb high-voltage inductive kick without catastrophic failure. This is critical in motor control, solenoid driver, and DC-DC converter designs where 45 A peak drain currents switching up to 60 V rails can generate damaging transient spikes without adequate energy absorption capability.
What PCB thermal management approach works best with the NTB45N06LT4G in a high-current application?
The D2PAK (TO-263) package of the NTB45N06LT4G transfers heat efficiently through its exposed drain pad soldered directly to a PCB copper pour or thermal via array. With up to 45 A drain current at 60 V, designers should size the copper area to maintain junction temperature within the rated limit, often supplementing with thermal vias connecting to internal or bottom-side heat-spreading layers for 12 V to 48 V power conversion stages.
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Why Buy from FindMyChip
About ON Semiconductor
ON Semiconductor (onsemi) provides intelligent power and sensing technologies for automotive, industrial, IoT, and cloud infrastructure applications.
In Stock · 24h Response · Worldwide Shipping
Response within 24 hours · Worldwide shipping
“Their engineering team helped us find a pin-compatible alternative when our original MCU went EOL.”
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