ON Semiconductor

ON Semiconductor

ON Semiconductor (onsemi) provides intelligent power and sensing technologies for automotive, industrial, IoT, and cloud infrastructure applications.

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All ON Semiconductor Components

Showing 2,7012,750 of 4,313

MUR820GTransistor Outline, Vertical
MUR820GDiode

Lead Temperature for Soldering Purposes: 260 C Max. for 10 Seconds; Epoxy Meets UL94, VO @ 1/8"; 175 C Operating Junction Temperature; Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Case: Epoxy, Molded; Low Forward Voltage; Ultrafast 25, 50 and 75 Nanosecond Recovery Time; Weight: 1.9 grams (approximately); Reverse Voltage to 600 Volts Mechanical Characteristics:; Low Leakage Current; AEC-Q101 Qualified and PPAP Capable; SUR8 Prefix for Automotive and Other Appl

MUR460GDiodes, Axial Diameter Horizontal Mounting
MUR460GDiode

Low Leakage Current; Marking: MUR405, MUR410, MUR415, MUR420, MUR440, MUR460; Case: Epoxy, Molded; Ultrafast 25, 50 and 75 Nanosecond Recovery Times; Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds; Polarity: Cathode indicated by Polarity Band; High Temperature Glass Passivated Junction; Reverse Voltage to 600 Volts Mechanical Characteristics:; 175°C Operating Junction Temperature; Weight: 1.1 gra

MUR240GDiodes, Axial Diameter Horizontal Mounting
MUR240GDiode

LEAD FREE, PLASTIC, CASE 59-10, 2 PIN

MUR260GDiodes, Axial Diameter Horizontal Mounting
MUR260GDiode

LEAD FREE, PLASTIC, CASE 59-10, 2 PIN

MUR440GDiodes, Axial Diameter Horizontal Mounting
MUR440GDiode

Use the download button to access the MUR440G schematic symbol, PCB footprint, and 3D model.

MUR4100EGDiodes, Axial Diameter Horizontal Mounting
MUR4100EGDiode

20 mjoules Avalanche Energy Guaranteed; Excellent Protection Against Voltage Transients in Switching Inductive Load Circuits; Ultrafast 75 Nanosecond Recovery Time; 175°C Operating Junction Temperature; Low Forward Voltage; Low Leakage Current; High Temperature Glass Passivated Junction; Marking: MUR480E, MUR4100E; Polarity: Cathode Indicated by Polarity Band; Case: Epoxy, Molded; Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds; Finish: All External Surfaces Corrosion Resistant and Termin

MUR8100EGTransistor Outline, Vertical
MUR8100EGDiode

Weight: 1.9 grams (approximately); Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; 20 mjoules Avalanche Energy Guaranteed; High Temperature Glass Passivated Junction; Ultrafast 75 Nanosecond Recovery Time; Low Leakage Current; Marking: U880E, U8100E; Reverse Voltage to 1000 Volts Mechanical Characteristics:; Excellent Protection Against Voltage Transients in Switching Inductive Load Circuits; Low Forward Voltage; Lead Temperature for Soldering Purposes: 260°C Max

MUR3060WTGTransistor Outline, Vertical
MUR3060WTGIntegrated Circuit

Low Leakage Specified @ 150 C Case Temperature; 175 C Operating Junction Temperature; High Voltage Capability to 600 Volts; Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Current Derating Specified @ Both Case and Ambient Temperatures; Ultrafast 35 and 60 Nanosecond Recovery Time; Weight: 4.3 grams (approximately); Low Forward Drop; Case: Epoxy, Molded; Epoxy Meets UL94, VO @ 1/8"; High Temperature Glass Passivated Junction Mechanical Characteristics:; Lead Temp

MUR480EGDiodes, Axial Diameter Horizontal Mounting
MUR480EGDiode

Use the download button to access the MUR480EG schematic symbol, PCB footprint, and 3D model.

MUR415GDiodes, Axial Diameter Horizontal Mounting
MUR415GDiode

Low Leakage Current; Marking: MUR405, MUR410, MUR415, MUR420, MUR440, MUR460; Case: Epoxy, Molded; Ultrafast 25, 50 and 75 Nanosecond Recovery Times; Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds; Polarity: Cathode indicated by Polarity Band; High Temperature Glass Passivated Junction; Reverse Voltage to 600 Volts Mechanical Characteristics:; 175°C Operating Junction Temperature; Weight: 1.1 gra

MUR410GDiodes, Axial Diameter Horizontal Mounting
MUR410GDiode

Low Leakage Current; Marking: MUR405, MUR410, MUR415, MUR420, MUR440, MUR460; Case: Epoxy, Molded; Ultrafast 25, 50 and 75 Nanosecond Recovery Times; Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds; Polarity: Cathode indicated by Polarity Band; High Temperature Glass Passivated Junction; Reverse Voltage to 600 Volts Mechanical Characteristics:; 175°C Operating Junction Temperature; Weight: 1.1 gra

MUR220GDiodes, Axial Diameter Horizontal Mounting
MUR220GDiode

Low Leakage Current; Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds; High Temperature Glass Passivated Junction Mechanical Characteristics:; 175°C Operating Junction Temperature; Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Low Forward Voltage; Polarity: Cathode Indicated by Polarity Band; Ultrafast 25 Nanosecond Recovery Times; Marking: MUR220; Case: Epoxy, Molded; Weight: 0.4 gram (approximately)

MUR3020WTGTransistor Outline, Vertical
MUR3020WTGIntegrated Circuit

Low Leakage Specified @ 150 C Case Temperature; 175 C Operating Junction Temperature; High Voltage Capability to 600 Volts; Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Current Derating Specified @ Both Case and Ambient Temperatures; Ultrafast 35 and 60 Nanosecond Recovery Time; Weight: 4.3 grams (approximately); Low Forward Drop; Case: Epoxy, Molded; Epoxy Meets UL94, VO @ 1/8"; High Temperature Glass Passivated Junction Mechanical Characteristics:; Lead Temp

MUR2100EGOther
MUR2100EGDiode

DIODE STANDARD 1000V 2A AXIAL Diode 1000 V 2A Through Hole Axial

MUR1620CTRGTransistor Outline, Vertical
MUR1620CTRGDiode

Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Common Anode Dual Rectifier (8.0 A per Leg or 16 A per Package); Ultrafast 35 Nanosecond Reverse Recovery Times; Epoxy Meets UL94, VO @ 1/8"; Low Leakage Specified @ 150 C Case Temperature; Current Derating @ Both Case and Ambient Temperatures; Marking: U1620R; High Temperature Glass Passivated Junction; Lead Temperature for Soldering Purposes: 260 C Max. for 10 Seconds; Complement to MUR1605CT Series of Common Cath

MUR1640CTGTransistor Outline, Vertical
MUR1640CTGIntegrated Circuit

175 C Operating Junction Temperature; High Temperature Glass Passivated Junction; High Voltage Capability to 600 Volts; Lead Temperature for Soldering Purposes: 260 C Max. for 10 Seconds; Current Derating @ Both Case and Ambient Temperatures Mechanical Characteristics:; Ultrafast 35 and 60 Nanosecond Recovery Times; Marking: U1610, U1615, U1620, U1640, U1660; Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Weight: 1.9 grams (approximately); Case: Epoxy, Molded; L

MUR1540GTransistor Outline, Vertical
MUR1540GDiode

175 C Operating Junction Temperature; Low Forward Drop; Ultrafast 35 and 60 Nanosecond Recovery Time; High Voltage Capability to 600 Volts; Low Leakage Specified @ 150 C Case Temperature; Lead Temperature for Soldering Purposes: 260 C Max. for 10 Seconds; Case: Epoxy, Molded; Current Derating Specified @ Both Case and Ambient Temperatures Mechanical Characteristics:; Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Weight: 1.9 grams (approximately); AEC-Q101 Quali

MUR1620CTGTransistor Outline, Vertical
MUR1620CTGIntegrated Circuit

175 C Operating Junction Temperature; High Temperature Glass Passivated Junction; Shipped 50 units per plastic tube; High Voltage Capability to 600 Volts; Lead Temperature for Soldering Purposes: 260 C Max. for 10 Seconds; Current Derating @ Both Case and Ambient Temperatures Mechanical Characteristics:; Ultrafast 35 and 60 Nanosecond Recovery Times; Marking: U1610, U1615, U1620, U1640, U1660; Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Weight: 1.9 grams (app

MUR160GDiodes, Axial Diameter Horizontal Mounting
MUR160GDiode

Marking: MUR105, MUR110, MUR115, MUR120, MUR130, MUR140, MUR160; Low Leakage Current; Reverse Voltage to 600 Volts Mechanical Characteristics:; Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds; Ultrafast 25, 50 and 75 Nanosecond Recovery Times; Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Low Forward Voltage; Weight: 0.4 gram (approximately); High Temperature Glass Passivated Junction; Case: Epoxy, Molded; Polarity: Cathode Indicated by Polar

MUR120GDiodes, Axial Diameter Horizontal Mounting
MUR120GDiode

Marking: MUR105, MUR110, MUR115, MUR120, MUR130, MUR140, MUR160; Low Leakage Current; Reverse Voltage to 600 Volts Mechanical Characteristics:; Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds; Ultrafast 25, 50 and 75 Nanosecond Recovery Times; Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Low Forward Voltage; Weight: 0.4 gram (approximately); High Temperature Glass Passivated Junction; Case: Epoxy, Molded; Polarity: Cathode Indicated by Polar

MTP50P03HDLGTransistor Outline, Vertical
MTP50P03HDLGTransistor

LEAD FREE, CASE 221A-09, 3 PIN

MUR110RLGDiodes, Axial Diameter Horizontal Mounting
MUR110RLGDiode

Marking: MUR105, MUR110, MUR115, MUR120, MUR130, MUR140, MUR160; Low Leakage Current; Reverse Voltage to 600 Volts Mechanical Characteristics:; Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds; Ultrafast 25, 50 and 75 Nanosecond Recovery Times; Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Low Forward Voltage; Weight: 0.4 gram (approximately); High Temperature Glass Passivated Junction; Case: Epoxy, Molded; Polarity: Cathode Indicated by Polar

MUN5330DW1T1GSOT23 (6-Pin)
MUN5330DW1T1GTransistor

Simplifies Circuit Design; Reduces Board Space; Reduces Component Count; S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable; These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant

MUR1100EGDiodes, Axial Diameter Horizontal Mounting
MUR1100EGDiode

10 mjoules Avalanche Energy Guaranteed; Excellent Protection Against Voltage Transients in Switching Inductive Load Circuits; Ultrafast 75 Nanosecond Recovery Time; 175°C Operating Junction Temperature; Low Forward Voltage; Low Leakage Current; High Temperature Glass Passivated Junction; Reverse Voltage to 1000 Volts Mechanical Characteristics:; Case: Epoxy, Molded; Weight: 0.4 gram (approximately); Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Lead Temperature

MUR140GDiodes, Axial Diameter Horizontal Mounting
MUR140GDiode

MUR140G from ON Semiconductor is a diode for rectification, protection, clamping, and power-management circuits. Key specifications include 0A, 400V, 2 pins, -65°C to 175°C, Axial Lead 5.20x2.70mm, 25.4x0.71mm Pkg, Lead len/dia package/footprint, supporting reliable selection for OEM maintenance, prototyping, and production BOMs. The Axial Lead 5.20x2.70mm, 25.4x0.71mm Pkg, Lead len/dia format supports standard assembly and sourcing workflows.

MUR115GDiodes, Axial Diameter Horizontal Mounting
MUR115GDiode

Marking: MUR105, MUR110, MUR115, MUR120, MUR130, MUR140, MUR160; Low Leakage Current; Reverse Voltage to 600 Volts Mechanical Characteristics:; Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds; Ultrafast 25, 50 and 75 Nanosecond Recovery Times; Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Low Forward Voltage; Weight: 0.4 gram (approximately); High Temperature Glass Passivated Junction; Case: Epoxy, Molded; Polarity: Cathode Indicated by Polar

MUR1100ERLGDiodes, Axial Diameter Horizontal Mounting
MUR1100ERLGDiode

10 mjoules Avalanche Energy Guaranteed; Excellent Protection Against Voltage Transients in Switching Inductive Load Circuits; Ultrafast 75 Nanosecond Recovery Time; 175°C Operating Junction Temperature; Low Forward Voltage; Low Leakage Current; High Temperature Glass Passivated Junction; Reverse Voltage to 1000 Volts Mechanical Characteristics:; Case: Epoxy, Molded; Weight: 0.4 gram (approximately); Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Lead Temperature

MUN5237DW1T1GSOT23 (6-Pin)
MUN5237DW1T1GTransistor BJT NPN

Simplifies Circuit Design; Reduces Board Space; Reduces Component Count; S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable; These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant

MUN2211T1GSOT23 (3-Pin)
MUN2211T1GTransistor

Reduces Component Count; S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable; These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant; Simplifies Circuit Design; Reduces Board Space

MTP2P50EGTransistor Outline, Vertical
MTP2P50EGMOSFET (P-Channel)

LEAD FREE, CASE 221A-09, 3 PIN

MUN5235DW1T1GSOT23 (6-Pin)
MUN5235DW1T1GTransistor

Dual NPN Transistors; SC-88 (SOT-363) Package; NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101; These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant

MUN5311DW1T1GSOT23 (6-Pin)
MUN5311DW1T1GTransistor

Simplifies Circuit Design; Reduces Board Space; Reduces Component Count; S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable; These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant

MUN5211DW1T1GSOT23 (6-Pin)
MUN5211DW1T1GIntegrated Circuit

Simplifies Circuit Design; Reduces Board Space; Reduces Component Count; S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable; These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant

MUN5215DW1T1GSOT23 (6-Pin)
MUN5215DW1T1GTransistor

NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable; These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant; Simplifies Circuit Design; Reduces Board Space; Reduces Component Count

MUN5215T1GSOT23 (3-Pin)
MUN5215T1GTransistor RET NPN

Simplifies Circuit Design; Reduces Board Space; Reduces Component Count; S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable; These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant

MUN2232T1GSOT23 (3-Pin)
MUN2232T1GTransistor BJT NPN

Simplifies Circuit Design; Reduces Board Space; Reduces Component Count; NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable; These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant

MUN5214DW1T1GSOT23 (6-Pin)
MUN5214DW1T1GTransistor BJT NPN

Simplifies Circuit Design; Reduces Board Space; Reduces Component Count; NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable; These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant

MMBT2222ALT3GSOT23 (3-Pin)
MMBT2222ALT3GTransistor BJT NPN

CASE 318-08, 3 PIN

MUN5230DW1T1GSOT23 (6-Pin)
MUN5230DW1T1GTransistor

Simplifies Circuit Design; Reduces Board Space; Reduces Component Count; S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable; These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant

MTD6N20ET4GTO-XXX (Inc. DPAK)
MTD6N20ET4GTransistor

Power MOSFET 200V 6A 700 mOhm Single N-Channel DPAK

MSD1819A-RT1GSOT23 (3-Pin)
MSD1819A-RT1GTransistor BJT NPN

Available in 8 mm, 7-inch/3000 Unit Tape and Reel; Low VCE(sat), < 0.5 V; High hFE, 210-460; Moisture Sensitivity Level 1; ESD Protection: Human Body Model > 4000 V ESD Protection: Machine Model > 400 V; Pb-Free Package is Available; S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

MSR1560GTransistor Outline, Vertical
MSR1560GDiode

LEAD FREE, PLASTIC, CASE 221B-04, 2 PIN

MMUN2216LT1GSOT23 (3-Pin)
MMUN2216LT1GTransistor RET NPN

Simplifies Circuit Design; Reduces Board Space; Reduces Component Count; S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable; These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant

MRA4005T1GDiodes Moulded
MRA4005T1GDiode

Finish: All External Surfaces are Corrosion Resistant and Terminal Leads are Readily Solderable; Weight: 70 mg (Approximately); Compact Package with J-Bend Leads Ideal for Automated Handling; Available in 12 mm Tape, 5000 Units per 13 inch Reel, Add "T3" Suffix to Part Number; Polarity: Notch and Band in Plastic Body Indicates Cathode Lead; Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 seconds in Solder Bath; Case: Molded Epoxy Epoxy meets UL94, VO at 1/8"; Marking: MRA4003

MRA4004T3GDiodes Moulded
MRA4004T3GDiode

Finish: All External Surfaces are Corrosion Resistant and Terminal Leads are Readily Solderable; Weight: 70 mg (Approximately); Compact Package with J-Bend Leads Ideal for Automated Handling; Available in 12 mm Tape, 5000 Units per 13 inch Reel, Add "T3" Suffix to Part Number; Polarity: Notch and Band in Plastic Body Indicates Cathode Lead; Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 seconds in Solder Bath; Case: Molded Epoxy Epoxy meets UL94, VO at 1/8"; Marking: MRA4003

MRA4003T3GDiodes Moulded
MRA4003T3GDiode

Weight: 70 mg (Approximately); Finish: All External Surfaces are Corrosion Resistant and Terminal Leads are Readily Solderable; Compact Package with J-Bend Leads Ideal for Automated Handling; Available in 12 mm Tape, 5000 Units per 13 inch Reel, Add "T3" Suffix to Part Number; Polarity: Notch and Band in Plastic Body Indicates Cathode Lead; Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 seconds in Solder Bath; Case: Molded Epoxy Epoxy meets UL94, VO at 1/8"; Marking: MRA4003

MRA4006T3GDiodes Moulded
MRA4006T3GDiode

Finish: All External Surfaces are Corrosion Resistant and Terminal Leads are Readily Solderable; Weight: 70 mg (Approximately); Compact Package with J-Bend Leads Ideal for Automated Handling; Available in 12 mm Tape, 5000 Units per 13 inch Reel, Add "T3" Suffix to Part Number; Polarity: Notch and Band in Plastic Body Indicates Cathode Lead; Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 seconds in Solder Bath; Case: Molded Epoxy Epoxy meets UL94, VO at 1/8"; Marking: MRA4003

MR856GDiodes, Axial Diameter Horizontal Mounting
MR856GDiode

Use the download button to access the MR856G schematic symbol, PCB footprint, and 3D model.

MR854GDiodes, Axial Diameter Horizontal Mounting
MR854GDiode

Use the download button to access the MR854G schematic symbol, PCB footprint, and 3D model.

MR856RLGDiodes, Axial Diameter Horizontal Mounting
MR856RLGDiode

Use the download button to access the MR856RLG schematic symbol, PCB footprint, and 3D model.

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