ON Semiconductor

ON Semiconductor

ON Semiconductor (onsemi) provides intelligent power and sensing technologies for automotive, industrial, IoT, and cloud infrastructure applications.

4,313

Total Products

33

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All ON Semiconductor Components

Showing 2,8012,850 of 4,313

MMBT5401LT1GSOT23 (3-Pin)
MMBT5401LT1GTransistor

These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant; S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

MMBT4401LT3GSOT23 (3-Pin)
MMBT4401LT3GTransistor BJT NPN

Miniature SOT-23 Surface Mount Package Saves Board Space; These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant; S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

MMBT4403LT3GSOT23 (3-Pin)
MMBT4403LT3GTransistor

Miniature SOT-23 Surface Mount Package Saves Board Space; Low rDS(on) Provides Higher Efficiency and Extends Battery Life; Pb-Free Packages are Available; S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

MMBT5550LT1GSOT23 (3-Pin)
MMBT5550LT1GTransistor

Miniature SOT-23 Surface Mount Package Saves Board Space; S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

MMBT3906LT3GSOT23 (3-Pin)
MMBT3906LT3GTransistor BJT PNP

These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant; S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

MMBT3904LT3GSOT23 (3-Pin)
MMBT3904LT3GTransistor BJT NPN

These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant; S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

MMBT3906TT1GSOT23 (3-Pin)
MMBT3906TT1GTransistor BJT PNP

Use the download button to access the MMBT3906TT1G schematic symbol, PCB footprint, and 3D model.

MMBT2369LT1GSOT23 (3-Pin)
MMBT2369LT1GTransistor BJT NPN

TO-236, 3 PIN

MMBFJ310LT3GSOT23 (3-Pin)
MMBFJ310LT3GJFET (N-Channel)

Drain and Source are interchangable; SOT-23 Surface Mount Package Saves Board Space; Low rDS(on) Provides Higher Efficiency and Extends Battery Life; These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant; S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable

MMBT2907AWT1GSOT23 (3-Pin)
MMBT2907AWT1GTransistor

These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant; Miniature SC-70/SOT-323 Surface Mount Package Saves Board Space; NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable

MMBT2222LT1GSOT23 (3-Pin)
MMBT2222LT1GTransistor BJT NPN

CASE 318-08, 3 PIN

MMBFJ309LT1GSOT23 (3-Pin)
MMBFJ309LT1GJFET (N-Channel)

Drain and Source are interchangable; SOT-23 Surface Mount Package Saves Board Space; Low rDS(on) Provides Higher Efficiency and Extends Battery Life; These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant; S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable

MMBT2907ALT3GSOT23 (3-Pin)
MMBT2907ALT3GTransistor

CASE 318-03, 3 PIN

MMBFJ177LT1GSOT23 (3-Pin)
MMBFJ177LT1GJFET (P-Channel)

HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN

MMBT2222AWT1GSOT23 (3-Pin)
MMBT2222AWT1GTransistor BJT NPN

Low rDS(on) Provides Higher Efficiency and Extends Battery Life; Miniature SC-70/SOT-323 Surface Mount Package Saves Board Space; Pb-Free Package is Available; S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

MMBF4393LT1GSOT23 (3-Pin)
MMBF4393LT1GTransistor

Pb-Free Packages are Available; S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

MMBFJ175LT1GSOT23 (3-Pin)
MMBFJ175LT1GJFET (P-Channel)

Low rDS(on) Provides Higher Efficiency and Extends Battery Life; Miniature SOT-23 Surface Mount Package Saves Board Space; These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant

MMBT2222ATT1GSOT23 (3-Pin)
MMBT2222ATT1GTransistor BJT NPN

SC-75, 3 PIN

MMBFJ310LT1GSOT23 (3-Pin)
MMBFJ310LT1GJFET (N-Channel)

Drain and Source are interchangable; SOT-23 Surface Mount Package Saves Board Space; Low rDS(on) Provides Higher Efficiency and Extends Battery Life; These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant; S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable

MMBD7000LT1GSOT23 (3-Pin)
MMBD7000LT1GDiode

Low Reverse Leakage; Extremely Low Minority Carrier Lifetime; Available in 8 mm Tape and Reel; Very Low Capacitance; Pb-Free Packages are Available; S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable

MMBF4392LT1GSOT23 (3-Pin)
MMBF4392LT1GTransistor

Pb-Free Packages are Available; S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

MMBF4391LT1GSOT23 (3-Pin)
MMBF4391LT1GTransistor

Use the download button to access the MMBF4391LT1G schematic symbol, PCB footprint, and 3D model.

MMBD914LT3GSOT23 (3-Pin)
MMBD914LT3GDiode

These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant; S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

MMBD914LT1GSOT23 (3-Pin)
MMBD914LT1GDiode

These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant; S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

MMBD352LT1GSOT23 (3-Pin)
MMBD352LT1GDiode

NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC Qualified and PPAP Capable; Low Forward Voltage - 0.5 Volts (Typ) @ IF = 10 mA; Very Low Capacitance - Less Than 1.0 pF @ Zero Volts; Pb-Free Packages are Available

MMBD2838LT1GSOT23 (3-Pin)
MMBD2838LT1GDiode

HALOGEN FREE AND ROHS COMPLIANT, CASE 318-18, 3 PIN

MJL4302AGTransistor Outline, Vertical
MJL4302AGTransistor

High Safe Operating Area - 1.0 A / 100 V at 1 Second; High ft; - 350V Collector-Emitter Sustaining Voltage; Gain Complementary:; Gain Linearity from 100 mA to 5 A; High Gain - 80 to 250; hfe = 50 (min) at Ic = 8A; Low Harmonic Distortion

MMBD330T1GSOT23 (3-Pin)
MMBD330T1GDiode

Extremely Low Minority Carrier Lifetime; Very Low Capacitance; Low Reverse Leakage; S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC Qualified and PPAP Capable

MM3Z16VST1GOther
MM3Z16VST1GZener Diode

Use the download button to access the MM3Z16VST1G schematic symbol, PCB footprint, and 3D model.

MJL21195GTransistor Outline, Vertical
MJL21195GTransistor BJT PNP

Use the download button to access the MJL21195G schematic symbol, PCB footprint, and 3D model.

MJW21196GTransistor Outline, Vertical
MJW21196GTransistor BJT NPN

Use the download button to access the MJW21196G schematic symbol, PCB footprint, and 3D model.

MMBD301LT1GSOT23 (3-Pin)
MMBD301LT1GDiode

Low Reverse Leakage - IR = 13 nAdc (Typ) MBD301, MMBD301; Very Low Capacitance - 1.5 pF (Max) @ VR = 15 V; Extremely Low Minority Carrier Lifetime - 15 ps (Typ); Pb-Free Packages are Available; S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC Qualified and PPAP Capable

MJW21194GTransistor Outline, Vertical
MJW21194GTransistor BJT NPN

Use the download button to access the MJW21194G schematic symbol, PCB footprint, and 3D model.

MM3Z24VST1GOther
MM3Z24VST1GZener Diode

Use the download button to access the MM3Z24VST1G schematic symbol, PCB footprint, and 3D model.

MJW21193GTransistor Outline, Vertical
MJW21193GTransistor BJT PNP

Use the download button to access the MJW21193G schematic symbol, PCB footprint, and 3D model.

MJL21196GTransistor Outline, Vertical
MJL21196GTransistor BJT NPN

Use the download button to access the MJL21196G schematic symbol, PCB footprint, and 3D model.

MJW21195GTransistor Outline, Vertical
MJW21195GTransistor BJT PNP

Use the download button to access the MJW21195G schematic symbol, PCB footprint, and 3D model.

MJL21194GTransistor Outline, Vertical
MJL21194GTransistor BJT NPN

Use the download button to access the MJL21194G schematic symbol, PCB footprint, and 3D model.

MJL4281AGTransistor Outline, Vertical
MJL4281AGTransistor BJT NPN

- 350V Collector-Emitter Sustaining Voltage; Gain Complementary:; Gain Linearity from 100 mA to 5 A; High Gain - 80 to 250; hfe = 50 (min) at Ic = 8A; Low Harmonic Distortion; High Safe Operating Area - 1.0 A / 100 V at 1 Second; High ft

MJL3281AGTransistor Outline, Vertical
MJL3281AGTransistor BJT NPN

Exceptional Safe Operating Area for reliable performance at higher powers ; NPN/PNP Gain Matching within 10% from 50mA to 5A for symmetrical; Excellent Gain Linearity for accurate reproduction of input signal; High VCE for greater dynamic range; High frequency for high amplifier bandwidth

MJW18020GTransistor Outline, Vertical
MJW18020GTransistor BJT NPN

High and Excellent Gain Linearity; Fast and Very Tight Switching Times Parameters tsi and tfi; Very Stable Leakage Current due to the Planar Structure; High Reliability; Pb-Free Package is Available

MJL1302AGTransistor Outline, Vertical
MJL1302AGTransistor BJT PNP

Exceptional Safe Operating Area for reliable performance at higher powers ; NPN/PNP Gain Matching within 10% from 50mA to 5A for symmetrical; Excellent Gain Linearity for accurate reproduction of input signal; High VCE for greater dynamic range; High frequency for high amplifier bandwidth

MJL21193GTransistor Outline, Vertical
MJL21193GTransistor

Use the download button to access the MJL21193G schematic symbol, PCB footprint, and 3D model.

MJH6284GTransistor Outline, Vertical
MJH6284GIntegrated Circuit

Extremely High RBSOA Capability; Inverters; 100 C Performance Specified for: Reverse-Biased SOA with Inductive Load Switching Times with Inductive Loads Saturation Voltages Leakage Currents; Relay Drivers 120 ns Inductive Crossover Time 100 C (T; Motor Controls 800 ns Inductive Storage Time 100 C (T; Extended FBSOA Rating Using Ultra-fast Rectifiers; Switching Regulators Collector-Emitter Voltage VCEV = 1000 Vdc; Solenoids 80 ns Inductive Fall Time 100 C (Typ); Fast Turn-Off Times; Deflection Circuits; Pb-F

MJE5852GTransistor Outline, Vertical
MJE5852GTransistor

Pb-Free Packages are Available

MJE253GTransistor Outline, Vertical
MJE253GTransistor

High Current Gain Bandwidth Product - fT = 40 MHz (Min) @ IC = 100 mAdc; Low Collector-Emitter Saturation Voltage - VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc; High DC Current Gain @ IC = 200 mAdc hFE = 40-200 hFE = 40-120 - MJE243, MJE253; Annular Construction for Low Leakages ICBO = 100 nAdc (Max) @ Rated VCB; High Collector-Emitter Sustaining Voltage - VCEO(sus) = 100 Vdc (Min) MJE243, MJE253; Pb-Free Packages are Available

MJH11022GTransistor Outline, Vertical
MJH11022GTransistor

Monolithic Construction; Collector-Emitter Sustaining Voltage VCEO(sus) = 150 Vdc (Min) MJH11018, 17 VCEO(sus) = 200 Vdc (Min) - MJH11020, 19 VCEO(sus) = 250 Vdc (Min) - MJH11022, 21; Low Collector-Emitter Saturation Voltage VCE(sat) = 1.2 V (Typ) @ IC = 5.0 A VCE(sat) = 1.8 V (Typ) @ IC = 10 A; High DC Current Gain @ 10 Adc - hFE = 400 Min (All Types); Pb-Free Packages are Available

MJD45H11T4GOther
MJD45H11T4GTransistor BJT PNP

Complementary Pairs Simplifies Designs; Low Collector Emitter Saturation Voltage VCE(sat) = 1.0 Volt Max @ 8.0 Amperes; Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix); Straight Lead Version in Plastic Sleeves ("-1" Suffix); Lead Formed Version in 16 mm Tape and Reel for Surface Mount ("T4" Suffix); Electrically Similar to Popular D44H/D45H Series; Fast Switching Speeds; NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101

MJH11021GTransistor Outline, Vertical
MJH11021GTransistor

Monolithic Construction; Collector-Emitter Sustaining Voltage VCEO(sus) = 150 Vdc (Min) MJH11018, 17 VCEO(sus) = 200 Vdc (Min) - MJH11020, 19 VCEO(sus) = 250 Vdc (Min) - MJH11022, 21; Low Collector-Emitter Saturation Voltage VCE(sat) = 1.2 V (Typ) @ IC = 5.0 A VCE(sat) = 1.8 V (Typ) @ IC = 10 A; High DC Current Gain @ 10 Adc - hFE = 400 Min (All Types); Pb-Free Packages are Available

MJE15034GTransistor Outline, Vertical
MJE15034GTransistor

Pb-Free Packages are Available

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