ON Semiconductor

FXLA108BQX is a ON Semiconductor Integrated Circuit for industrial controls and power management. Key specs include 21 pins, -40°C to 85°C, and 8 Channel. Request quote pricing, in-stock sourcing, and worldwide shipping for production builds.

FTL75939UCX is a ON Semiconductor Sensor for environmental monitoring and instrumentation. Key specs include 12 pins and -40°C to 85°C. Request quote pricing, in-stock sourcing, and worldwide shipping for production builds.

FSUSB11MTCX is a ON Semiconductor Integrated Circuit for industrial controls and power management. Key specs include 14 pins, -40°C to 85°C, and -14 W. Request quote pricing, in-stock sourcing, and worldwide shipping for production builds.

FST16233MTDX is a ON Semiconductor Capacitor for decoupling and filtering. Key specs include 56 pins, -40°C to 85°C, and 4 W. Request quote pricing, in-stock sourcing, and worldwide shipping for production builds.

Internal Startup Circuit; Built-in Soft-Start: 20ms; Low Operating Current: 1.8mA; Auto-Restart Mode; Various Protections: Over-Voltage Protection(OVP), Overload Protection (OLP), Output-ShortProtection (OSP), Abnormal Over-CurrentProtection (AOCP), Internal Thermal ShutdownFunction with Hysteresis (TSD); Under 50mW Standby Power Consumption at 265VAC, No-load Condition with Burst Mode; Internal Avalanche-Rugged SenseFET (650V); Pulse-by-Pulse Current Limiting; Precision Fixed Operating Frequency with Frequ

FSAV330MX is a ON Semiconductor Connector for board-to-board interconnects and module stacking. Key specs include 16 pins, -40°C to 85°C, and 16A. Request quote pricing, in-stock sourcing, and worldwide shipping for production builds.

FSA641UMX is a ON Semiconductor Connector for board-to-board interconnects and module stacking. Key specs include 21 pins, -40°C to 85°C, and 4 W. Request quote pricing, in-stock sourcing, and worldwide shipping for production builds.

FSA266K8X is a ON Semiconductor Connector for board-to-board interconnects and module stacking. Key specs include 8 pins, -40°C to 85°C, and 3.10 MM. Request quote pricing, in-stock sourcing, and worldwide shipping for production builds.

FQU5P20TU is a ON Semiconductor Diode for rectification and reverse-polarity protection. Key specs include 3 pins, -200 V, and -3.7 A. Request quote pricing, in-stock sourcing, and worldwide shipping for production builds.

175°C maximum junction temperature rating; Low gate charge ( Typ. 29nC); 100% avalanche tested; -15A, -120V, RDS(on) = 200mΩ(Max.) @VGS = -10 V, ID = -7.5A; Low Crss ( Typ. 110pF)

-2.8A, -200V, RDS(on) = 2.7Ω(Max.) @VGS = -10 V, ID = -1.4A; Low gate charge ( Typ. 6nC); 100% avalanche tested; Low Crss ( Typ. 7.5pF)

FPF2701MX is a ON Semiconductor Integrated Circuit for industrial controls and power management. Key specs include 8 pins and -40°C to 85°C. Request quote pricing, in-stock sourcing, and worldwide shipping for production builds.

Fairchild Semiconductor FPF2102 Intelligent Power Switch, MOSFET Load Switch, 400mA, 1.8 → 5.5V, 667mW, 5-Pin

C-UL, UL and VDE certifications pending; dv/dt of 600V/µs guaranteed; Available in tape and reel quantities of 2500.; Compact 4-pin surface mount package (2.4mm maximum standoff height); Zero voltage crossing; Peak blocking voltage: 600V (FODM306X) 800V (FODM308X)

FODM3022R2_NF098 is a ON Semiconductor integrated circuit for embedded control. Key specs include 4 pins, Small Outline Packages, 10 W. From RFQ-based sourcing, in-stock options can support worldwide shipping.

Wide supply voltage range from 15V to 30V; 2.5A peak output current driving capability for most 1200V/150A IGBT; User configurable: inverting, non-inverting, auto-reset, auto-shutdown; Under voltage lockout protection; 3.3V/5V, CMOS/TTL compatible inputs; High Speed; 1,414V (peak) working voltage rating; Use of P-Channel MOSFETs at output stage enables output voltage swing close to the supply rail (rail-to-rail output); RDS(ON) of 1 Ω (typ.) offers lower power dissipation; 8mm creepage and clearance distanc

DIN EN/IEC60747-5-5; Minimum BVCEO of 70 V Guaranteed; FOD817C: 200-400%; UL1577, 5,000 VACRMS for 1 Minute; FOD817B: 130-260%; FOD814A: 50-150%; FOD817D: 300-600%; Safety and Regulatory Approvals; AC Input Response (FOD814); FOD814: 20-300%; FOD817A: 80-160%; Current Transfer Ratio in Selected Groups:; FOD817: 50-600%

Current Transfer Ratio in Selected Groups:; FOD814: 20-300%; FOD817B: 130-260%; Safety and Regulatory Approvals; FOD817C: 200-400%; FOD817A: 80-160%; UL1577, 5,000 VACRMS for 1 Minute; FOD817: 50-600%; Minimum BVCEO of 70 V Guaranteed; FOD814A: 50-150%; AC Input Response (FOD814); FOD817D: 300-600%; DIN EN/IEC60747-5-5

PSR in excess of 10% of the supply voltages across full operating bandwidth; 20kV/µs Minimum Static CMR @ Vcm = 1000V; Industrial fieldbus communications; 3.3V and 5V CMOS Compatibility; UL1577, 3750 VACRMS for 1 min.; Isolated Data Acquisition System; Profibus, DeviceNet, CAN, RS485; 6ns max. Pulse Width Distortion; 20ns max. Propagation Delay Skew; Programmable Logic Control; Safety and regulatory pending approvals:; 25Mbit/sec Date Rate (NRZ); 40ns max. Propagation Delay; 25kV/µs Typical Dynamic CMR @ Vc

3A minimum peak output current for medium power MOSFET/IGBT; Use of P-Channel MOSFETs at output stage enables output voltage swing close to the supply rail (rail-to-rail output); Safety and regulatory approvals; Guaranteed operating temperature range of -40°C to 100°C; Minimum clearance distance of 8.0mm (Option T); Fast switching speed; Fast output rise/fall time; Under voltage lockout protection (UVLO) with hysteresis - optimized for driving IGBTs; Minimum insulation thickness of 0.5mm; IEC60747-5-2, 1,41

FMB3906 is a ON Semiconductor Transistor for load switching and power management. Key specs include 6 pins, 8 W, and 0.2 A. Request quote pricing, in-stock sourcing, and worldwide shipping for production builds.

< ±1% with ±20% Magnetizing Inductance Variation ; Over-Temperature Protection (OTP); Adaptive Feedback Loop Control for Startup without Overshoot; < ±1% from 50% to 100% Load Voltage Variation; VDD Under-Voltage Lockout (UVLO); Cycle-by-Cycle Current Limit; Output Diode Short Protection; < ±1% Over Universal Line Voltage Variation; VDD Over-Voltage Protection (OVP); High PF of > 0.9, and Low THD of < 10% Over Universal Line Input Range; Performance; Primary-Side Regulation (PSR) Control for Cost-Effective

FJPF13007H2TU is a ON Semiconductor Transistor for load switching and power management. Key specs include 3 pins, 3 PIN, and 221A. Request quote pricing, in-stock sourcing, and worldwide shipping for production builds.

Wide RBSOA: Up to 1100 V; Low Equivalent On Resistance; Low Driving Capacitance, No Miller Capacitance; Very Fast Switch: 150 kHz; Low Switching Losses; Avalanche Rated; Reliable HV Switch: No False Triggering due to High dv/dt Transients

FJN3303RTA is a ON Semiconductor Transistor for load switching and power management. Key specs include 3 pins, 135A, and 0.1 A. Request quote pricing, in-stock sourcing, and worldwide shipping for production builds.

FJN3302RTA is a ON Semiconductor Transistor for load switching and power management. Key specs include 3 pins, 135A, and 0.1 A. Request quote pricing, in-stock sourcing, and worldwide shipping for production builds.

FGH25T120SMD_F155 is a ON Semiconductor Diode for rectification and reverse-polarity protection. Key specs include 3 pins, -55°C to 175°C, and 66 W. Request quote pricing, in-stock sourcing, and worldwide shipping for production builds.

FDU3N40TU is a ON Semiconductor Diode for rectification and reverse-polarity protection. Key specs include 3 pins, 369A, and 4 W. Request quote pricing, in-stock sourcing, and worldwide shipping for production builds.

Inputs and outputs opposite side of package, allowing easier interface to microprocessors; 74AC541 is a non-inverting option of the 74AC540; ICC and IOZ reduced by 50%; 74ACT541 has TTL-compatible inputs; Output source/sink 24 mA; 3-STATE outputs

SMALL OUTLINE, R-PDSO-G8

SO-8

Low gate charge; 6 A, 30 V; RDS(ON) = 35 mΩ @ VGS = 4.5 V ; RDS(ON) = 28 mΩ @ VGS = 10 V; Fast switching speed; High performance trench technology for extremely low RDS(ON); High power and current handling capability

Obsolete - Power MOSFET, N-Channel, UniFETTM, Ultra FRFETTM, 500V, 5A, 1.5Ω, TO-220F

FDP032N08B_F102 is a MOSFET transistor by ON Semiconductor for OEM repair, prototyping, and production sourcing. Key specs: 3 pins, 211 A, 80 V. From $0.00, in stock with worldwide shipping.

Fast Switching Speed; 100% UIL Tested ; Max rDS(on) = 36 mΩ at VGS = 4.5 V, ID = 6.0 A ; Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 6.5 A ; High Performance Trench Technology for Extremely Low rDS(on); RoHS Compliant ; High Power and Current Handling Capability in a Widely Used Surface Mount Package

100% UIL tested; Advanced package and silicon combination for low rDS(on) and high efficiency; Max rDS(on) = 54 mΩ at VGS = 6 V, ID = 4.5 A; Max rDS(on) = 34 mΩ at VGS = 10 V, ID = 6 A; MSL1 robust package design; RoHS Compliant; Shielded Gate MOSFET Technology

Advanced Package and Silicon combination for low rDS(on) and high efficiency ; 100% UIL tested ; MSL1 robust package design ; RoHS Compliant ; Max rDS(on) = 1.1 mΩ at VGS = 10 V, ID = 44 A ; Next generation enhanced body diode technology, engineered for soft recovery; Max rDS(on) = 1.5 mΩ at VGS = 4.5 V, ID = 37 A

Max rDS(on) = 18 mΩ at VGS = 4.5 V, ID = 8.5 A ; Free from halogenated compounds and antimony oxides ; Max rDS(on) = 14 mΩ at VGS = 10 V, ID = 10 A ; RoHS Compliant ; Low Profile - 0.8 mm maximum in the new package MicroFET 2x2 mm

Reduced RDS(on) ( 110mΩ ( Typ.)@ VGS = 10V, ID = 22A); Improved switching speed with low EMI; 175oC rated junction temperature; Low gate charge Qg results in simple drive requirement ( Typ. 90nC); Improved Gate, avalanche and high reapplied dv/dt ruggedness; Reduced Miller capacitance and low Input capacitance ( Typ. Crss = 40pF)

Use the download button to access the FDG316P schematic symbol, PCB footprint, and 3D model.

High performance trench technology for extremely lowRDS(ON) .; Low gate charge (2.1nC typical).; Compact industry standard SC70-6 surface mountpackage.; 2 A, 30 A V; RDS(on) = 0.12 Ω @ VGS = 10 V; RDS(on) = 0.16 Ω @ VGS = 4.5 V

SC-70, 6 PIN

Max rDS(on) = 180mΩ at VGS = -4.5V, ID = -1.5A; VF < 500mV @ 1A; VF < 580mV @ 2A; Schottky and MOSFET incorporated into single power surface mount S0-8 package; Electrically independent Schottky and MOSFET pinout for design flexibility; RoHS Compliant; Max rDS(on) = 115mΩ at VGS = -10V, ID = -3.0A

N-Channel 100 V 15.7A (Tc) 50W (Tc) Surface Mount TO-252AA 1465 pF @ 25 V -55°C ~ 175°C

ON Semiconductor FDD8444_F085 is a MOSFET for electronic assemblies. Key specs include 3 pins and production PCB layout. Request pricing, stock checks, and worldwide shipping support from FindMyChip.

SuperSOT™ -6 package: small footprint (72% smaller thanstandard SO-8; low profile (1mm thick). ; RoHS Compliant ; Max rDS(on) = 36mΩ at VGS = 4.5V, ID = 5.3A ; Max rDS(on) = 27mΩ at VGS = 10V, ID = 6.1A

−3.6 A, −30 V. RDS(ON) = 75 m @ VGS = −10 V RDS(ON) = 125 m @ VGS = −4.5 V Low Gate Charge (6.2 nC typical) High Performance Trench Technology for Extremely Low RDS(ON) These Device is Pb−Free and Halogen Free

SuperSOT™ -6 package:small footprint (72% smaller than standard SO¨C8) low profile (1mm thick). ; Manufactured using Green packaging materials. ; Max rDS(ON) = 43mΩ at VGS = -4.5V, ID = -4.5A ; Halide free ; Low gate charge (8nC typical). ; Max rDS(ON) = 68mΩ at VGS = -2.5V, ID = -3.8A ; RoHS Compliant ; High performance trench technology for extremely low rDS(on)

Control MOSFET (Q1) includes Zener protection for ESD ruggedness (>6KV Human Body Model) ; VDROP=0.2V @ VIN=5V, IL=2.8A. R(ON) = 0.07Ω VDROP=0.2V @ VIN=2.5V, IL=1.9A. R(ON) = 0.105Ω ; High performance PowerTrench™ technology for extremely for superior thermal and electrical capabilities

SuperSOT™-6 package design using copper lead frame for superior thermal and electrical capabilities ; VDROP=0.20V @ VIN=12V, IL=1.5A. R(ON) = 0.125Ω VDROP=0.20V @ VIN=5V, IL=1A. R(ON) = 0.20Ω