FQPF15P12 ON Semiconductor MOSFET (P-Channel) (Transistor Outline, Vertical) In Stock
175°C maximum junction temperature rating; Low gate charge ( Typ. 29nC); 100% avalanche tested; -15A, -120V, RDS(on) = 200mΩ(Max.) @VGS = -10 V, ID = -7.5A; Low Crss ( Typ. 110pF)
- Manufacturer
- ON Semiconductor
- Package
- Transistor Outline, Vertical
- Pin Count
- 3
- Lifecycle
- OBSOLETE
- Datasheet
- FQPF15P12 Datasheet PDF
- Category
- MOSFET (P-Channel)
- Temp Range
- ?°C to 175.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of FQPF15P12?
- MOSFET (P-Channel) from ON Semiconductor identified by manufacturer part number FQPF15P12
- Documented technical context includes 175°C for engineering comparison
- Package or mechanical reference recorded as Transistor Outline, Vertical for footprint checks
- Suitable for BOM sourcing, alternate review, repair stocking, and production procurement workflows
- Datasheet-backed context should be matched against voltage, current, timing, package, and lifecycle requirements before approval
What is FQPF15P12 used for?
FQPF15P12 is typically sourced for load switching, motor drives, power conversion, and protection circuits where buyers need a manufacturer-traceable mosfet (p-channel) with verifiable datasheet context. It is suitable for engineering replacement reviews, prototype builds, and production purchasing workflows that must confirm package fit, lifecycle risk, and key ratings such as 175°C.
What are the specifications of FQPF15P12?
| Pbfree Code | Yes |
| Manufacturer Package Code | 221AT |
| Factory Lead Time | 35Weeks |
| YTEOL | 0 |
| Avalanche Energy Rating (Eas) | 1157mJ |
| Case Connection | ISOLATED |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 120V |
| Drain Current-Max (ID) | 15A |
| Drain-source On Resistance-Max | 0.2Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-220AB |
| JESD-30 Code | R-PSFM-T3 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Polarity/Channel Type | P-CHANNEL |
| Power Dissipation-Max (Abs) | 41W |
| Pulsed Drain Current-Max (IDM) | 60A |
| Qualification Status | Not Qualified |
| Surface Mount | NO |
| Terminal Finish | MATTE TIN |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Transistor Outline, Vertical |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Where can I find the FQPF15P12 datasheet?
FQPF15P12 Datasheet DownloadOfficial datasheet from ON Semiconductor
What are equivalent replacements for FQPF15P12?
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
Which design checks should buyers confirm before selecting FQPF15P12?
Buyers should verify the mosfet (p-channel) role, package fit, lifecycle status, and datasheet ratings before approving this part. The fetched technical context includes 175°C, which should be matched against the target circuit and sourcing documentation.
How does the recorded package information affect sourcing FQPF15P12?
The recorded package reference is Transistor Outline, Vertical, so purchasers should confirm footprint compatibility, assembly handling, and approved manufacturer documentation. Include 175°C in the engineering review so procurement does not substitute a part with mismatched limits.
When comparing alternates for FQPF15P12, which parameters matter most?
Start with manufacturer, component category, package style, lifecycle status, and the electrical or mechanical ratings shown in the datasheet. Because the available context includes 175°C, any alternate should match that requirement before release.
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Why Buy from FindMyChip
About ON Semiconductor
ON Semiconductor (onsemi) provides intelligent power and sensing technologies for automotive, industrial, IoT, and cloud infrastructure applications.
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