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Infineon BSP129H6906XTSA1 N-channel MOSFET Transistor, 0.005 A, 240 V Depletion, 4-Pin SOT-223

Infineon BSO615N G is a transistor for electronic assemblies. It is specified around 8 pins for matching footprints and electrical requirements. From inquiry pricing with worldwide shipping support.

Infineon BSO613SPV G is an integrated circuit for electronic assemblies. It is specified around 8 pins for matching footprints and electrical requirements. From inquiry pricing with worldwide shipping support.

The BSL308PE is an Infineon dual P-channel enhancement-mode MOSFET in a 6-pin TSOP package, rated at -30 V drain voltage and -2.1 A continuous drain current per channel. With 500 mW maximum power dissipation, it suits load switching and battery protection in portable and wearable devices. Pb-free surface-mount construction supports compact PCB designs for IoT and handheld applications worldwide.

Infineon BSD314SPEH6327XTSA1 is a -30 V, 1.5 A P-channel power MOSFET with a maximum drain-source on-resistance of 140 milliohm and an integrated body diode, housed in a compact 6-pin SOT-363 surface mount package. It provides efficient load switching and reverse polarity protection for portable electronics and battery-powered devices. Available from authorized distributors with worldwide shipping.

Infineon BSD235NH6327XT Dual N-channel MOSFET Transistor, 0.95 A, 20 V, 6-Pin SOT-363

Infineon BSD235CH6327XT Dual N/P-channel MOSFET Transistor, 6-Pin SOT-363

MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3

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TDSON-8

Infineon BGX50AE6327, SMT Diode, 70V 140mA, 6ns, 4-Pin SOT-143

BFS481H6327 is an Infineon dual NPN RF bipolar transistor rated at 20 mA and 12 V, housed in a 6-pin SOT-363. Transition frequency reaches 6 GHz for low-noise RF amplification across VHF and UHF bands. Globally stocked for LNA and RF front-end circuit designs.

Infineon BFR92PE6327 NPN RF Bipolar Transistor, 0.045 A, 15 V, 3-Pin SOT-23

SOT-323, 3 PIN

Infineon BFP740FH6327 NPN SiGe Bipolar Transistor, 30 mA, 4 V, 4-Pin TSFP

Infineon BFP196E6327 is a single NPN silicon RF transistor in SOT-343 package optimized for L-band low-noise amplifier designs. Key specs include 12 V Vce max, 100 mA Ic max, 1.4 pF Cbc, and minimum hFE of 70. RoHS-compliant, available in 3000-piece tape-and-reel for automated assembly.

BFN 26 is a Infineon transistor bjt npn for switching, load control, and driver circuits. It provides 23-pin, SOT23 (3-Pin) details for compact PCB layouts and purchasing checks. From RFQ pricing, it supports in-stock sourcing.

BDP 953 is a Infineon transistor for switching, load control, and driver circuits. It provides 223-pin, SOT223 (3-Pin) details for compact PCB layouts and purchasing checks. From RFQ pricing, it supports in-stock sourcing and worldwide.

Use the download button to access the BCX42E6327 schematic symbol, PCB footprint, and 3D model.