BFP196E6327 Infineon Transistor (Other) In Stock
Infineon BFP196E6327 is a single NPN silicon RF transistor in SOT-343 package optimized for L-band low-noise amplifier designs. Key specs include 12 V Vce max, 100 mA Ic max, 1.4 pF Cbc, and minimum hFE of 70. RoHS-compliant, available in 3000-piece tape-and-reel for automated assembly.
- Manufacturer
- Infineon
- Package
- Other
- Pin Count
- 4
- Lifecycle
- END OF LIFE
- Datasheet
- BFP196E6327 Datasheet PDF
- Category
- Transistor
- Temp Range
- -65.0°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of BFP196E6327?
- L-band optimized NPN RF transistor with ultra-low collector-base capacitance of 1.4 pF for high-frequency amplifier performance
- 12 V maximum collector-emitter voltage with 100 mA collector current headroom for robust signal handling
- Compact SOT-343 (4-lead SC-70) package enabling minimal PCB footprint in space-constrained RF front-end designs
- RoHS-compliant, Pb-free construction with 3000-piece 7-inch tape-and-reel for high-volume SMT production
What is BFP196E6327 used for?
The BFP196E6327 is well suited for low-noise amplifiers (LNA), small-signal amplifiers, and oscillator circuits operating in the L-band frequency range (1–2 GHz), such as GPS, cellular base station front ends, and satellite communication receivers. Its 1.4 pF collector-base capacitance and 70 minimum hFE make it effective for achieving low noise figure in high-gain RF stages. The compact SOT-343 package is ideal for handheld wireless devices and compact RF module designs requiring board-space efficiency.
What are the specifications of BFP196E6327?
| Pbfree Code | Yes |
| YTEOL | 4 |
| Additional Feature | TR, 7 INCH: 3000 |
| Case Connection | COLLECTOR |
| Collector Current-Max (IC) | 0.1A |
| Collector-Base Capacitance-Max | 1.4pF |
| Collector-Emitter Voltage-Max | 12V |
| Configuration | SINGLE |
| DC Current Gain-Min (hFE) | 70 |
| Highest Frequency Band | L BAND |
| JESD-30 Code | R-PDSO-G4 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | NPN |
| Power Dissipation-Max (Abs) | 0.7W |
| Qualification Status | Not Qualified |
| Reference Standard | AEC-Q101 |
| Surface Mount | YES |
| Terminal Finish | Matte Tin (Sn) |
| Terminal Form | GULL WING |
| Terminal Position | DUAL |
| Transistor Application | AMPLIFIER |
| Transistor Element Material | SILICON |
| Transition Frequency-Nom (fT) | 7500MHz |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 1 |
| ECCN | EAR99 |
| Country of Origin | Germany, Mainland China |
Where can I find the BFP196E6327 datasheet?
BFP196E6327 Datasheet DownloadOfficial datasheet from Infineon
What are equivalent replacements for BFP196E6327?
Compatible alternatives and drop-in replacements for BFP196E6327:
suggested
suggested
Frequently Asked Questions
What are the maximum voltage and current ratings of the BFP196E6327 RF transistor?
The BFP196E6327 has a maximum collector-emitter voltage (Vce) of 12 V and a maximum collector current (Ic) of 100 mA. These ratings provide sufficient operating margin for L-band LNA stages powered from 3 V to 5 V supply rails in GPS and cellular receiver designs.
For which frequency bands and receiver designs is the BFP196E6327 most effective?
The BFP196E6327 is optimized for L-band applications spanning approximately 1 GHz to 2 GHz, making it highly suitable for GPS front-end LNAs, 1.8 GHz cellular amplifiers, and 1.57 GHz satellite navigation receivers. Its 1.4 pF collector-base capacitance enables low noise figure performance across this frequency range.
How does the minimum hFE of 70 affect biasing and gain in BFP196E6327 amplifier circuits?
With a minimum DC current gain (hFE) of 70, the BFP196E6327 allows designers to set stable base bias currents below 2 mA while achieving sufficient collector current for typical L-band LNA bias points. This hFE floor simplifies worst-case bias network design across temperature and production lot variations.
When would a designer choose the BFP196E6327 SOT-343 package over a larger RF transistor package?
The SOT-343 (E6327) package measures approximately 2.0 mm × 1.25 mm, making the BFP196E6327 ideal when PCB real estate is limited, such as in handset RF modules, IoT sensor nodes, or multi-chip RF front-end modules where 20 or more components must fit within a 10 mm × 10 mm area.
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