BSD314SPEH6327XTSA1 Infineon MOSFET (P-Channel) (SOT23 (6-Pin)) In Stock
Infineon BSD314SPEH6327XTSA1 is a -30 V, 1.5 A P-channel power MOSFET with a maximum drain-source on-resistance of 140 milliohm and an integrated body diode, housed in a compact 6-pin SOT-363 surface mount package. It provides efficient load switching and reverse polarity protection for portable electronics and battery-powered devices. Available from authorized distributors with worldwide shipping.
- Manufacturer
- Infineon
- Package
- SOT23 (6-Pin)
- Pin Count
- 6
- Lifecycle
- OBSOLETE
- Datasheet
- BSD314SPEH6327XTSA1 Datasheet PDF
- Category
- MOSFET (P-Channel)
- Temp Range
- -55.0°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of BSD314SPEH6327XTSA1?
- -30 V drain-source voltage and 1.5 A drain current for P-channel load switching in portable and battery-powered designs
- Low 140 milliohm maximum RDS(on) minimizes conduction losses in high-side switch and reverse polarity protection circuits
- Compact 6-pin SOT-363 SMT package enables space-efficient placement in smartphones, wearables, and IoT modules
- 11 pF maximum feedback capacitance (Crss) supports fast switching in high-frequency gate-drive circuit designs
What is BSD314SPEH6327XTSA1 used for?
The BSD314SPEH6327XTSA1 is used as a high-side load switch, reverse polarity protection device, and power multiplexer in battery-operated smartphones, wearables, and IoT nodes requiring -30 V P-channel switching at up to 1.5 A. Its low 140 milliohm on-resistance minimizes power dissipation in always-on peripheral power management circuits running from 3.3 V to 5 V battery rails. This P-channel MOSFET is also applied in USB power delivery switches and low-power embedded designs where compact SOT-363 packaging is essential.
What are the specifications of BSD314SPEH6327XTSA1?
| Pbfree Code | No |
| YTEOL | 0 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 30V |
| Drain Current-Max (ID) | 1.5A |
| Drain-source On Resistance-Max | 0.14Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 11pF |
| JESD-30 Code | R-PDSO-G6 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Polarity/Channel Type | P-CHANNEL |
| Power Dissipation-Max (Abs) | 0.5W |
| Reference Standard | AEC-Q101 |
| Surface Mount | YES |
| Terminal Finish | Tin (Sn) |
| Terminal Form | GULL WING |
| Terminal Position | DUAL |
| Transistor Element Material | SILICON |
| Package | SOT23 (6-Pin) |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 1 |
| ECCN | EAR99 |
Where can I find the BSD314SPEH6327XTSA1 datasheet?
BSD314SPEH6327XTSA1 Datasheet DownloadOfficial datasheet from Infineon
What are equivalent replacements for BSD314SPEH6327XTSA1?
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What drain-source voltage and current ratings define the BSD314SPEH6327XTSA1 for load-switch designs?
The BSD314SPEH6327XTSA1 is rated for 30 V drain-source breakdown and 1.5 A maximum drain current with a 140 milliohm on-resistance, providing an efficient P-channel load switch or reverse polarity protection device for portable 3.3 V to 5 V battery-powered electronics.
Which portable and battery-powered applications benefit most from the BSD314SPEH6327XTSA1?
Smartphones, wearables, USB power switches, and IoT sensor nodes benefit most from this device, leveraging the 1.5 A drain current and 140 milliohm RDS(on) for efficient high-side switching and reverse polarity protection on battery rails with minimal conduction losses.
How does the SOT-363 package of the BSD314SPEH6327XTSA1 affect PCB layout in space-constrained designs?
The SOT-363 package measures approximately 2.0 × 2.1 mm with 6 pins, offering the same small footprint as SOT-23 while accommodating a complete P-channel MOSFET rated at 1.5 A and 30 V alongside gate resistor connections, making it ideal for compact mobile and wearable PCB layouts.
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