BFS481H6327 Infineon Integrated Circuit (SOT23 (6-Pin)) In Stock
BFS481H6327 is an Infineon dual NPN RF bipolar transistor rated at 20 mA and 12 V, housed in a 6-pin SOT-363. Transition frequency reaches 6 GHz for low-noise RF amplification across VHF and UHF bands. Globally stocked for LNA and RF front-end circuit designs.
- Manufacturer
- Infineon
- Package
- SOT23 (6-Pin)
- Pin Count
- 6
- Lifecycle
- ACTIVE
- Datasheet
- BFS481H6327 Datasheet PDF
- Category
- Integrated Circuit
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- Dual matched NPN transistors in a single 6-pin SOT-363 package, halving component count for balanced RF amplifier topologies
- 6 GHz transition frequency enables low-noise amplification across VHF, UHF, and lower microwave bands
- 12 V collector-emitter breakdown voltage provides design margin for wide dynamic range RF preamplifier circuits
- 20 mA per-transistor collector current rating suits LNA, mixer, and oscillator stages in mobile wireless designs
Applications
The BFS481H6327 targets RF low-noise amplifiers, mixer stages, and oscillator circuits in mobile handsets, wireless LAN modules, and satellite receiver front-ends operating up to 6 GHz. Its dual matched NPN pair in a single package enables balanced differential amplifier topologies that reject common-mode noise, improving receiver sensitivity. Engineers also use it in UHF RFID readers, GPS preamplifiers near 1.575 GHz, and cellular base-station input stages where a low noise figure at 12 V bias is essential.
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What are the collector current and breakdown voltage ratings of BFS481H6327 for RF amplifier bias planning?
The BFS481H6327 supports a maximum collector current of 20 mA per transistor and a collector-emitter breakdown voltage of 12 V, providing adequate headroom for typical LNA bias points of 3 mA to 10 mA. These parameters allow designers to optimize the quiescent point for minimum noise figure while maintaining safe operating margins at signal peaks.
Up to what frequency does BFS481H6327 maintain useful gain for sub-6 GHz receiver chain designs?
The BFS481H6327 achieves a transition frequency of approximately 6 GHz, sustaining useful gain across the full VHF and UHF spectrum from 30 MHz up to 3 GHz and beyond. This makes it an effective gain stage in 5G sub-6 GHz LNA chains, GPS preamplifiers at 1.575 GHz, and 2.4 GHz wireless LAN front-ends requiring low noise figure.
How does integrating two transistors in the BFS481H6327 SOT-363 package improve RF PCB layout efficiency?
Combining two matched NPN transistors in the 6-pin SOT-363 reduces total board area by roughly 50% compared to two discrete SOT-23 components, while matched characteristics simplify differential bias network design. The compact package also shortens RF signal trace lengths, reducing parasitic inductance and improving gain flatness above 1 GHz in critical receive-path layouts.
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