BFS481H6327 Infineon Integrated Circuit (SOT23 (6-Pin)) In Stock
BFS481H6327 is an Infineon dual NPN RF bipolar transistor rated at 20 mA and 12 V, housed in a 6-pin SOT-363. Transition frequency reaches 6 GHz for low-noise RF amplification across VHF and UHF bands. Globally stocked for LNA and RF front-end circuit designs.
- Manufacturer
- Infineon
- Package
- SOT23 (6-Pin)
- Pin Count
- 6
- Lifecycle
- ACTIVE
- Datasheet
- BFS481H6327 Datasheet PDF
- Category
- Integrated Circuit
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of BFS481H6327?
- Dual matched NPN transistors in a single 6-pin SOT-363 package, halving component count for balanced RF amplifier topologies
- 6 GHz transition frequency enables low-noise amplification across VHF, UHF, and lower microwave bands
- 12 V collector-emitter breakdown voltage provides design margin for wide dynamic range RF preamplifier circuits
- 20 mA per-transistor collector current rating suits LNA, mixer, and oscillator stages in mobile wireless designs
What is BFS481H6327 used for?
The BFS481H6327 targets RF low-noise amplifiers, mixer stages, and oscillator circuits in mobile handsets, wireless LAN modules, and satellite receiver front-ends operating up to 6 GHz. Its dual matched NPN pair in a single package enables balanced differential amplifier topologies that reject common-mode noise, improving receiver sensitivity. Engineers also use it in UHF RFID readers, GPS preamplifiers near 1.575 GHz, and cellular base-station input stages where a low noise figure at 12 V bias is essential.
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
Where can I find the BFS481H6327 datasheet?
BFS481H6327 Datasheet DownloadOfficial datasheet from Infineon
What are equivalent replacements for BFS481H6327?
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What are the collector current and breakdown voltage ratings of BFS481H6327 for RF amplifier bias planning?
The BFS481H6327 supports a maximum collector current of 20 mA per transistor and a collector-emitter breakdown voltage of 12 V, providing adequate headroom for typical LNA bias points of 3 mA to 10 mA. These parameters allow designers to optimize the quiescent point for minimum noise figure while maintaining safe operating margins at signal peaks.
Up to what frequency does BFS481H6327 maintain useful gain for sub-6 GHz receiver chain designs?
The BFS481H6327 achieves a transition frequency of approximately 6 GHz, sustaining useful gain across the full VHF and UHF spectrum from 30 MHz up to 3 GHz and beyond. This makes it an effective gain stage in 5G sub-6 GHz LNA chains, GPS preamplifiers at 1.575 GHz, and 2.4 GHz wireless LAN front-ends requiring low noise figure.
How does integrating two transistors in the BFS481H6327 SOT-363 package improve RF PCB layout efficiency?
Combining two matched NPN transistors in the 6-pin SOT-363 reduces total board area by roughly 50% compared to two discrete SOT-23 components, while matched characteristics simplify differential bias network design. The compact package also shortens RF signal trace lengths, reducing parasitic inductance and improving gain flatness above 1 GHz in critical receive-path layouts.
Related Guides
CSD87313DMS Synchronous Buck Power Stage Design Guide
Design a compact CSD87313DMS synchronous buck stage with practical guidance for loss, gate drive, PCB layout, EMI, thermal validation, and sourcing.
Aug 6, 2026
STEF05SGR eFuse Selection Guide for 5 V Overcurrent Protection
Choose STEF05SGR for 5 V overcurrent protection by checking current-limit margin, inrush, thermal loss, fault response, and sourcing.
Aug 6, 2026
C0402C103K3RACTU Selection Guide: Choosing a 10 nF 0402 MLCC
Select C0402C103K3RACTU by voltage margin, X7R behavior, tolerance, 0402 assembly risk, and qualified alternatives.
Aug 4, 2026
STM32H753VIT6 MCU Selection Guide: Memory, Package, Connectivity, and Security
Choose STM32H753VIT6 by evaluating memory architecture, LQFP-100 pin fit, connectivity, security, power, and sourcing tradeoffs.
Aug 4, 2026
Why Buy from FindMyChip
About Infineon
Infineon is a leading electronic component manufacturer. FindMyChip sources Infineon ICs directly from authorized China distributors, offering competitive pricing and reliable stock.
In Stock · 24h Response · Worldwide Shipping
Response within 24 hours · Worldwide shipping
“The anti-counterfeit verification gave us confidence we'd never had with other China suppliers.”
You May Also Like
ACS770ECB-200U-PFF-T
Allegro Microsystems
Integrated Circuit
ACS770KCB-150U-PFF-T
Allegro Microsystems
Integrated Circuit
MC33901WEF
NXP
Integrated Circuit
MC7808BDTRKG
ON Semiconductor
Integrated Circuit
PA94EC
Apex Microtechnology
Integrated Circuit
AP7315-28SR-7
Diodes Inc.
Integrated Circuit
74HCT245D
Nexperia
Integrated Circuit
CY62256VNLL-70ZXCT
Cypress Semiconductor
Integrated Circuit
EPM7032AETC44-4N
Intel
Integrated Circuit
EPM3512AQC208-10N
Intel
Integrated Circuit
EPM3256ATC144-7N
Intel
Integrated Circuit
EPM3256AQC208-7N
Intel
Integrated Circuit
EPM3256AQC208-10N
Intel
Integrated Circuit
EPM3128ATC100-7N
Intel
Integrated Circuit
EPM1270F256C4N
Intel
Integrated Circuit
EPF8282ATC100-4N
Intel
Integrated Circuit
EPF6016QC208-2N
Intel
Integrated Circuit
EPF6016ATC144-3N
Intel
Integrated Circuit
EPF10K30ATC144-3N
Intel
Integrated Circuit
EPC2TI32N
Intel
Integrated Circuit
EPC2LC20
Intel
Integrated Circuit
EP3SL150F1152C4N
Intel
Integrated Circuit
EP2SGX60DF780C5N
Intel
Integrated Circuit
EP2SGX60CF780C5N
Intel
Integrated Circuit