SCTWA40N120G2AG STMicroelectronics Transistor (Transistor Outline, Vertical) In Stock
STMicroelectronics SCTWA40N120G2AG is an automotive-grade silicon carbide (SiC) N-channel Power MOSFET rated at 1200 V, 33 A continuous drain current, and 75 mΩ typical on-resistance in the HiP247 long-leads package. It features AEC-Q101 automotive qualification and a built-in anti-parallel diode for high-efficiency power conversion. Available globally in stock with worldwide shipping.
- Manufacturer
- STMicroelectronics
- Package
- Transistor Outline, Vertical
- Pin Count
- 3
- Lifecycle
- OBSOLETE
- Datasheet
- SCTWA40N120G2AG Datasheet PDF
- Category
- Transistor
- Temp Range
- -55.0°C to 200.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 1200 V breakdown voltage with 75 mΩ typical RDS(on) and 33 A rated drain current for high-efficiency SiC power switching
- AEC-Q101 automotive-qualified with JESD-609 e3 lead-free compliance for reliable use in EV on-board chargers and traction inverters
- HiP247 long-leads package (TO-247 compatible) with 15 pF max feedback capacitance enabling fast switching and low EMI in hard-switched converters
Applications
The SCTWA40N120G2AG is designed for automotive traction inverters, on-board chargers (OBC), and DC-DC converters in electric vehicles requiring high efficiency at 800 V battery bus voltages. Its 1200 V, 33 A SiC MOSFET is also used in industrial solar inverters, energy storage systems, and three-phase motor drives where switching losses at 100 kHz must be minimized compared to silicon IGBTs. AEC-Q101 qualification makes it the preferred choice for OEMs designing powertrain and charging systems to IATF 16949 quality standards.
Specifications
| YTEOL | 0 |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 1200V |
| Drain Current-Max (ID) | 33A |
| Drain-source On Resistance-Max | 0.105Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 15pF |
| JESD-30 Code | R-PSFM-T3 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 290W |
| Pulsed Drain Current-Max (IDM) | 100A |
| Reference Standard | AEC-Q101 |
| Surface Mount | NO |
| Terminal Finish | Matte Tin (Sn) - annealed |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON CARBIDE |
| Package | Transistor Outline, Vertical |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Alternate & Equivalent Parts
Compatible alternatives and drop-in replacements for SCTWA40N120G2AG:
Power Field-Effect Transistor, 36A I(D), 1200V, 0.1ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET
Power Field-Effect Transistor, 36A I(D), 1200V, 0.1ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET
Frequently Asked Questions
What are the key electrical ratings of the SCTWA40N120G2AG for automotive power converter designs?
The SCTWA40N120G2AG is rated at 1200 V drain-source breakdown voltage, 33 A continuous drain current, and 75 mΩ typical RDS(on) at 25°C. Its maximum RDS(on) is 0.105 Ω, and the feedback capacitance (Crss) is 15 pF maximum. These specifications make it suitable for 800 V automotive bus architectures in EV on-board chargers and traction inverters switching at frequencies above 50 kHz.
How does the SiC MOSFET technology in SCTWA40N120G2AG improve efficiency over a silicon IGBT at the same 1200 V rating?
Silicon carbide (SiC) enables the SCTWA40N120G2AG to switch at frequencies up to 100 kHz or higher with much lower switching losses than a comparable silicon 1200 V IGBT, which is typically limited to below 20 kHz. SiC devices also lack the tail current recovery of IGBTs, reducing turn-off losses by 50% or more. At 33 A and 1200 V, this translates to meaningfully higher converter efficiency in automotive OBC and DC-DC designs.
What does AEC-Q101 qualification mean for the SCTWA40N120G2AG in an EV powertrain application?
AEC-Q101 is the Automotive Electronics Council's stress test qualification standard for discrete semiconductors. AEC-Q101 Grade qualification for the SCTWA40N120G2AG confirms it has passed high-temperature reverse bias (HTRB) at 1200 V, temperature cycling from -40°C to +150°C, and other automotive reliability screens. This allows automotive OEMs to use the 33 A SiC MOSFET in traction inverters and on-board chargers under IATF 16949 supplier qualification requirements.
What package does the SCTWA40N120G2AG use and how does it affect thermal management in a motor drive design?
The SCTWA40N120G2AG is housed in the HiP247 long-leads package, a TO-247 compatible 3-lead through-hole format with an extended lead length that improves PCB assembly clearance in power module designs. The package's exposed metal drain tab allows direct heatsink mounting, enabling thermal resistance junction-to-case values that support full 33 A operation with proper heatsinking. The long-lead variant also reduces parasitic inductance in gate drive loops compared to standard TO-247 packages.
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STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
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