SCTWA40N120G2V-4 STMicroelectronics Integrated Circuit (Other) In Stock
The SCTWA40N120G2V-4 is a silicon carbide power MOSFET from STMicroelectronics rated at 1200V and 36A with a 62 mΩ typical on-resistance in an HiP247-4 package. It features a built-in diode and drain case connection for high-efficiency power conversion. Available from stock worldwide with fast shipping.
- Manufacturer
- STMicroelectronics
- Package
- Other
- Pin Count
- 4
- Lifecycle
- OBSOLETE
- Datasheet
- SCTWA40N120G2V-4 Datasheet PDF
- Category
- Integrated Circuit
- Price
- From $13.9400(MOQ 1)
- Temp Range
- -55.0°C to 200.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of SCTWA40N120G2V-4?
- 1200V SiC MOSFET with only 62 mΩ typical RDS(on) enabling high-efficiency hard-switching power topologies
- Built-in diode with single-device configuration simplifies half-bridge and full-bridge converter designs
- HiP247-4 package with drain case connection provides superior thermal dissipation for high-current 36A operation
What is SCTWA40N120G2V-4 used for?
The SCTWA40N120G2V-4 is targeted at high-voltage power conversion applications including EV onboard chargers, solar inverters, and industrial motor drives where silicon carbide's low switching losses reduce heat and improve efficiency. Its 1200V breakdown voltage and 36A continuous drain current handle demanding DC bus voltages up to 800V in three-phase inverter stages. The HiP247-4 package and built-in diode simplify thermal management and bill-of-materials in high-power designs.
What are the specifications of SCTWA40N120G2V-4?
| Factory Lead Time | 32Weeks |
| YTEOL | 0 |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 1200V |
| Drain Current-Max (ID) | 36A |
| Drain-source On Resistance-Max | 0.1Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 15pF |
| JESD-30 Code | R-PSFM-T4 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 277W |
| Pulsed Drain Current-Max (IDM) | 107A |
| Surface Mount | NO |
| Terminal Finish | Matte Tin (Sn) - annealed |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON CARBIDE |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Where can I find the SCTWA40N120G2V-4 datasheet?
SCTWA40N120G2V-4 Datasheet DownloadOfficial datasheet from STMicroelectronics
What are equivalent replacements for SCTWA40N120G2V-4?
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What is the on-resistance of the SCTWA40N120G2V-4 and how does SiC technology reduce switching losses versus silicon?
The SCTWA40N120G2V-4 has a typical RDS(on) of 62 mΩ and a maximum of 100 mΩ. Silicon carbide technology allows switching at higher frequencies with lower turn-on and turn-off losses compared to equivalent silicon IGBTs, reducing heat dissipation in 1200V inverter stages operating at tens of kilohertz.
Can the SCTWA40N120G2V-4 handle an 800V DC bus in a three-phase motor drive, given its 1200V rating?
Yes, the 1200V minimum DS breakdown voltage provides a comfortable safety margin above an 800V DC bus, and the 36A maximum drain current supports motor power levels up to approximately 20 kW in a well-designed inverter with adequate thermal management.
What thermal advantage does the HiP247-4 package offer for the SCTWA40N120G2V-4 in a heat-sink mounted design?
The HiP247-4 package connects the case directly to the drain, allowing the exposed metal case to be mounted flush against a heatsink for efficient thermal conduction, which is critical when dissipating the power losses of a 36A SiC MOSFET in a continuous operation scenario.
Does the SCTWA40N120G2V-4 include a built-in diode, and does that eliminate the need for an external freewheeling diode?
Yes, the SCTWA40N120G2V-4 has a built-in diode in a single-device configuration, which acts as the body diode for freewheeling current in bridge topologies, reducing external component count and PCB area in EV charger and solar inverter half-bridge stages.
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Why Buy from FindMyChip
About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $19.2500 | $19.25 |
| 10+ | $15.1500 | $151.50 |
| 100+ | $13.9400 | $1394.00 |
In Stock · 24h Response · Worldwide Shipping
Response within 24 hours · Worldwide shipping
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