Transistor

BA17815T is a ROHM Semiconductor Transistor for load switching, power conversion, and signal-control stages. It combines 3 pins, 3 PIN, and Transistor Outline, Vertical package, 3-pin layout for practical design qualification. From request-a-quote sourcing, FindMyChip supports stock checks and worldwide shipping.

Ultrafast 35 Nanosecond Recovery Time; 175 C Operating Junction Temperature; Popular TO-220 Package; Epoxy Meets UL94, VO @ 1/8''; Low Forward Voltage; Low Leakage Current; High Temperature Glass Passivated Junction Mechanical Characteristics:; Case: Epoxy, Molded; Weight: 1.9 grams (approximately); Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Lead Temperature for Soldering Purposes: 260 C Max. for 10 Seconds; Shipped 50 units per plastic tube; Marking: BYW80-

LEAD FREE, CASE 221A-07, 3 PIN

Nexperiaplastic, surface-mounted package; 3 terminals; 1.9 mm pitch; 2.9 mm x 1.3 mm x 1 mm body

2SA773 from Panasonic is a transistor for switching, amplification, and driver stages. Key specs include 3 pins, standard transistor package, and Silicon PNP epitaxial planer type. From quote pricing, in-stock sourcing support, worldwide shipping.

Toshiba 2SC3325 is a single NPN silicon transistor in a compact SOT-23 package designed for low-frequency small-signal amplification. Key specs include 50 V Vce max, 500 mA Ic max, and minimum hFE of 25. Available from stock with worldwide shipping for audio and general-purpose analog designs.

RF WIDEBAND TRANSISTOR, NPN, 15V, 5.5GHZ, 3SOT223; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:15V; Transition Frequency ft:5.5GHz; Power Dissipation Pd:1W; DC Collector Current:100mA; DC Current Gain hFE:80hFE; MSL:-RoHS Compliant: Yes

PLASTIC PACKAGE-3

HALOGEN AND LEAD FREE, ATPAK-3

The Infineon IRL40T209ATMA1 is a high-current N-channel power MOSFET rated at 40 V drain-source breakdown voltage and 300 A maximum drain current, featuring an ultra-low 0.72 mΩ on-resistance (RDS(on)) in an HSOF-8 package with integrated body diode. It delivers 875 mJ avalanche energy rating for robust switching in demanding power applications. This device is designed for automotive, industrial motor drives, and high-efficiency DC-DC converter applications.

PBLS6023D,115 from Nexperia is a signal-interface IC for communications, signal routing, and interface protection designs. Key specs include 6 pins, 150°C maximum, and TSOP. RFQ sourcing supports in-stock checks and worldwide shipping.

Bipolar Transistors - Pre-Biased 50V 200mW NPN/PNP resistor-equip trans NPN/NPN resistor-equipped transistors; R1 = 4.7 kohm, R2 = 47 kohm

MBR30100CT C0 is a Taiwan Semiconductor transistor component for transistor designs. It supports 100V in a Transistor Outline, Vertical package. Request inquiry pricing with worldwide shipping support for production or replacement sourcing.

SR10100 C0 is a Taiwan Semiconductor transistor component for transistor designs. It supports 100V in a Transistor Outline, Vertical package. Request inquiry pricing with worldwide shipping support for production or replacement sourcing.

Nexperia PIMZ2,115 is a dual NPN/PNP complementary bipolar transistor pair rated at 50V and 150mA with minimum hFE of 120, housed in a compact 6-pin SOT457 (TSOP6) surface-mount package. Two separate transistor elements enable complementary push-pull or differential circuit topologies. Available from authorized distributors with worldwide shipping.

STMicroelectronics ACST410-8FI is a 4 A AC power switch triac with a gate trigger current below 10 mA, rated for 800 V blocking voltage. Designed for direct interfacing with microcontrollers in AC load switching applications. Available in vertical TO package with worldwide distribution.

SCT012W90G3AG is a STMicroelectronics transistor for board-level electronic assemblies. Key specs include 3 pins and 900 V. From RFQ pricing, FindMyChip supports stock checks and worldwide shipping.

4 A - 800 V overvoltage protected AC switch

Use the download button to access the Z0402MH schematic symbol, PCB footprint, and 3D model.

Transistor General Purpose NPN - Emitter Switched Bipolar 900V 20A Through Hole TO-247-4L HP

STMicroelectronics 2N5153ESYHRT is a radiation-hardened PNP bipolar junction transistor rated at 80V collector-emitter voltage and 5A collector current for space and hi-rel applications. It is qualified for total ionizing dose (TID) environments in a TO-39 metal can package. Available from stock with worldwide shipping.

650 V, 75 mOhm typ., 15 A, e-mode PowerGaN transistor

The STGIF5CH60TS-X is a SLLIMM 2nd series intelligent power module from STMicroelectronics designed for 3-phase AC motor inverter drives, rated at 8 A and 600 V with short-circuit-rugged IGBTs. It delivers up to 16 A output current in a compact 26-pin DIP-SPM package for space-efficient motor control designs.

Precision Amplifiers High Voltage Zero-Drift Op Amps

60 A 1200 V thyristor controlled bridge leg in ACEPACK SMIT module

Trench gate field-stop, 1200 V, 50 A, low-loss M series IGBT in a Max247 long leads package

52kHz Simple 3A Buck Regulator

RF Transistor NPN 10V 20mA 400MHz 200mW Through Hole TO-72

MOSFET UNRLS, FG, SIC MOSFET, TO-247

LDO Voltage Regulators

STMicroelectronics SCTWA40N120G2AG is an automotive-grade silicon carbide (SiC) N-channel Power MOSFET rated at 1200 V, 33 A continuous drain current, and 75 mΩ typical on-resistance in the HiP247 long-leads package. It features AEC-Q101 automotive qualification and a built-in anti-parallel diode for high-efficiency power conversion. Available globally in stock with worldwide shipping.

ROHS COMPLIANT, PLASTIC PACKAGE-3

MULTIWATT V-15

MOSFET PTD HIGH VOLTAGE

Silicon carbide Power MOSFET 650 V, 18 mΩ typ., 119 A in an HiP247-4 package

Trans MOSFET P-CH Si 40V 0.16A 3-Pin SOT-23

Automotive Turbo 2 ultrafast high voltage rectifier

LDO Voltage Regulators Fixed 5Vout - 3A Low Dropout Regulators with Micropower Quiescent Current and Shutdown

ROHS COMPLIANT, TO-220, 3 PIN

OMNIFET :FULLY AUTOPROTECTED POWER MOSFET, RDS(on):0.3Ω, Ilim:10A,VCLAMP:60V.

Automotive 800 V, 30 A bridge rectifier diode

High Speed Operational Amplifiers Very Lo-Pwr R-To-R I/O Voltage Feedback

IC,Voltage Regulator,1.5A,Adjustable over a 1.2V to 57V output,3-Terminal,LM317HVT

SOIC-8

LDO Voltage Regulators 500mA Fixed Out Adj

40 A, 600 V, fast IGBT with UltraFAST diode

Gate Drivers Industrial & ASIC

SOT-89, 3 PIN

N-channel 650 V, 56 mΩ typ., 42 A MDmesh M5 PowerMOSFETs in TO-247 and TO-247 long leads packages

Darlington Transistors PNP Power Darlington