IRL40T209ATMA1 Infineon Transistor (Other) In Stock
The Infineon IRL40T209ATMA1 is a high-current N-channel power MOSFET rated at 40 V drain-source breakdown voltage and 300 A maximum drain current, featuring an ultra-low 0.72 mΩ on-resistance (RDS(on)) in an HSOF-8 package with integrated body diode. It delivers 875 mJ avalanche energy rating for robust switching in demanding power applications. This device is designed for automotive, industrial motor drives, and high-efficiency DC-DC converter applications.
- Manufacturer
- Infineon
- Package
- Other
- Pin Count
- 19
- Lifecycle
- OBSOLETE
- Datasheet
- IRL40T209ATMA1 Datasheet PDF
- Category
- Transistor
- Temp Range
- -55.0°C to 175.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of IRL40T209ATMA1?
- Ultra-low RDS(on) of 0.72 mΩ at 300 A drain current minimizes conduction losses in high-current power stages
- 875 mJ avalanche energy rating provides robust protection against inductive switching transients in motor drive circuits
- HSOF-8 package with drain-connected case enables direct heatsink mounting for superior thermal management at high current
What is IRL40T209ATMA1 used for?
The Infineon IRL40T209ATMA1 is used in high-current automotive motor control modules, electric vehicle DC-DC converters, and synchronous rectifier stages where very low RDS(on) at 300 A is critical for efficiency. Its HSOF-8 package with case-to-drain connection facilitates efficient heat dissipation when mounted to a heatsink, supporting continuous operation in thermally demanding under-hood environments. The device is also applied in industrial servo drives and UPS systems requiring reliable 40 V switching with high avalanche ruggedness.
What are the specifications of IRL40T209ATMA1?
| Factory Lead Time | 52Weeks |
| YTEOL | 0 |
| Avalanche Energy Rating (Eas) | 875mJ |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 40V |
| Drain Current-Max (ID) | 300A |
| Drain-source On Resistance-Max | 0.00072Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code | R-PSSO-F8 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 500W |
| Pulsed Drain Current-Max (IDM) | 1200A |
| Surface Mount | YES |
| Terminal Finish | Tin (Sn) |
| Terminal Form | FLAT |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 1 |
| ECCN | EAR99 |
| HTS Code | 8541.29.00.95 |
Where can I find the IRL40T209ATMA1 datasheet?
IRL40T209ATMA1 Datasheet DownloadOfficial datasheet from Infineon
What are equivalent replacements for IRL40T209ATMA1?
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What is the RDS(on) of the IRL40T209ATMA1 and why does it matter for a 300 A motor drive design?
The IRL40T209ATMA1 has a maximum drain-source on-resistance (RDS(on)) of 0.00072 Ω (0.72 mΩ). At 300 A drain current, this results in a conduction power loss of only about 64.8 W (I² × R = 300² × 0.00072), which is exceptionally low for a device at this current level. Minimizing RDS(on) is critical in motor drives and EV converters to limit thermal dissipation and improve overall system efficiency.
How does the IRL40T209ATMA1's avalanche energy rating protect circuits with inductive loads?
The IRL40T209ATMA1 is rated for 875 mJ of unclamped inductive switching (UIS) avalanche energy. When switching inductive loads such as motors or transformers, energy stored in the inductance can cause voltage spikes exceeding the drain-source breakdown voltage of 40 V. The high avalanche energy rating allows the MOSFET to safely absorb these transients without damage, increasing system reliability and reducing the need for external snubber circuits.
Which thermal management strategy should be used with the IRL40T209ATMA1 in a high-current application?
The IRL40T209ATMA1 uses an HSOF-8 package where the case is connected directly to the drain. This allows the device to be mounted directly to a grounded heatsink (with appropriate electrical isolation if needed), providing a low thermal resistance path from junction to ambient. At 300 A and 0.72 mΩ RDS(on), adequate heatsinking with thermal resistance below 0.5 °C/W is recommended to maintain junction temperature below 175 °C.
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