Diode

Diode components are essential building blocks in modern electronic systems. FindMyChip sources Diode ICs from authorized China distributors with competitive pricing and reliable stock.

2,158 components

How to Choose Diode Components

  • 1Verify electrical specifications (voltage, current, frequency) match your design requirements.
  • 2Check package footprint and thermal characteristics against your PCB layout constraints.
  • 3Confirm lifecycle status and long-term availability for production designs.

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All Diode Components

Showing 1,2011,250 of 2,158

MUR480EGON Semiconductor

Use the download button to access the MUR480EG schematic symbol, PCB footprint, and 3D model.

MUR415GON Semiconductor

Low Leakage Current; Marking: MUR405, MUR410, MUR415, MUR420, MUR440, MUR460; Case: Epoxy, Molded; Ultrafast 25, 50 and 75 Nanosecond Recovery Times; Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds; Polarity: Cathode indicated by Polarity Band; High Temperature Glass Passivated Junction; Reverse Voltage to 600 Volts Mechanical Characteristics:; 175°C Operating Junction Temperature; Weight: 1.1 gra

MUR410GON Semiconductor

Low Leakage Current; Marking: MUR405, MUR410, MUR415, MUR420, MUR440, MUR460; Case: Epoxy, Molded; Ultrafast 25, 50 and 75 Nanosecond Recovery Times; Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds; Polarity: Cathode indicated by Polarity Band; High Temperature Glass Passivated Junction; Reverse Voltage to 600 Volts Mechanical Characteristics:; 175°C Operating Junction Temperature; Weight: 1.1 gra

MUR220GON Semiconductor

Low Leakage Current; Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds; High Temperature Glass Passivated Junction Mechanical Characteristics:; 175°C Operating Junction Temperature; Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Low Forward Voltage; Polarity: Cathode Indicated by Polarity Band; Ultrafast 25 Nanosecond Recovery Times; Marking: MUR220; Case: Epoxy, Molded; Weight: 0.4 gram (approximately)

MUR2100EGON Semiconductor

DIODE STANDARD 1000V 2A AXIAL Diode 1000 V 2A Through Hole Axial

MUR1620CTRGON Semiconductor

Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Common Anode Dual Rectifier (8.0 A per Leg or 16 A per Package); Ultrafast 35 Nanosecond Reverse Recovery Times; Epoxy Meets UL94, VO @ 1/8"; Low Leakage Specified @ 150 C Case Temperature; Current Derating @ Both Case and Ambient Temperatures; Marking: U1620R; High Temperature Glass Passivated Junction; Lead Temperature for Soldering Purposes: 260 C Max. for 10 Seconds; Complement to MUR1605CT Series of Common Cath

MUR1540GON Semiconductor

175 C Operating Junction Temperature; Low Forward Drop; Ultrafast 35 and 60 Nanosecond Recovery Time; High Voltage Capability to 600 Volts; Low Leakage Specified @ 150 C Case Temperature; Lead Temperature for Soldering Purposes: 260 C Max. for 10 Seconds; Case: Epoxy, Molded; Current Derating Specified @ Both Case and Ambient Temperatures Mechanical Characteristics:; Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Weight: 1.9 grams (approximately); AEC-Q101 Quali

MUR160GON Semiconductor

Marking: MUR105, MUR110, MUR115, MUR120, MUR130, MUR140, MUR160; Low Leakage Current; Reverse Voltage to 600 Volts Mechanical Characteristics:; Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds; Ultrafast 25, 50 and 75 Nanosecond Recovery Times; Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Low Forward Voltage; Weight: 0.4 gram (approximately); High Temperature Glass Passivated Junction; Case: Epoxy, Molded; Polarity: Cathode Indicated by Polar

MUR120GON Semiconductor

Marking: MUR105, MUR110, MUR115, MUR120, MUR130, MUR140, MUR160; Low Leakage Current; Reverse Voltage to 600 Volts Mechanical Characteristics:; Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds; Ultrafast 25, 50 and 75 Nanosecond Recovery Times; Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Low Forward Voltage; Weight: 0.4 gram (approximately); High Temperature Glass Passivated Junction; Case: Epoxy, Molded; Polarity: Cathode Indicated by Polar

MUR110RLGON Semiconductor

Marking: MUR105, MUR110, MUR115, MUR120, MUR130, MUR140, MUR160; Low Leakage Current; Reverse Voltage to 600 Volts Mechanical Characteristics:; Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds; Ultrafast 25, 50 and 75 Nanosecond Recovery Times; Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Low Forward Voltage; Weight: 0.4 gram (approximately); High Temperature Glass Passivated Junction; Case: Epoxy, Molded; Polarity: Cathode Indicated by Polar

MUR1100EGON Semiconductor

10 mjoules Avalanche Energy Guaranteed; Excellent Protection Against Voltage Transients in Switching Inductive Load Circuits; Ultrafast 75 Nanosecond Recovery Time; 175°C Operating Junction Temperature; Low Forward Voltage; Low Leakage Current; High Temperature Glass Passivated Junction; Reverse Voltage to 1000 Volts Mechanical Characteristics:; Case: Epoxy, Molded; Weight: 0.4 gram (approximately); Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Lead Temperature

MUR140GON Semiconductor

MUR140G from ON Semiconductor is a diode for rectification, protection, clamping, and power-management circuits. Key specifications include 0A, 400V, 2 pins, -65°C to 175°C, Axial Lead 5.20x2.70mm, 25.4x0.71mm Pkg, Lead len/dia package/footprint, supporting reliable selection for OEM maintenance, prototyping, and production BOMs. The Axial Lead 5.20x2.70mm, 25.4x0.71mm Pkg, Lead len/dia format supports standard assembly and sourcing workflows.

MUR115GON Semiconductor

Marking: MUR105, MUR110, MUR115, MUR120, MUR130, MUR140, MUR160; Low Leakage Current; Reverse Voltage to 600 Volts Mechanical Characteristics:; Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds; Ultrafast 25, 50 and 75 Nanosecond Recovery Times; Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Low Forward Voltage; Weight: 0.4 gram (approximately); High Temperature Glass Passivated Junction; Case: Epoxy, Molded; Polarity: Cathode Indicated by Polar

MUR1100ERLGON Semiconductor

10 mjoules Avalanche Energy Guaranteed; Excellent Protection Against Voltage Transients in Switching Inductive Load Circuits; Ultrafast 75 Nanosecond Recovery Time; 175°C Operating Junction Temperature; Low Forward Voltage; Low Leakage Current; High Temperature Glass Passivated Junction; Reverse Voltage to 1000 Volts Mechanical Characteristics:; Case: Epoxy, Molded; Weight: 0.4 gram (approximately); Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Lead Temperature

MSR1560GON Semiconductor

LEAD FREE, PLASTIC, CASE 221B-04, 2 PIN

MRA4005T1GON Semiconductor

Finish: All External Surfaces are Corrosion Resistant and Terminal Leads are Readily Solderable; Weight: 70 mg (Approximately); Compact Package with J-Bend Leads Ideal for Automated Handling; Available in 12 mm Tape, 5000 Units per 13 inch Reel, Add "T3" Suffix to Part Number; Polarity: Notch and Band in Plastic Body Indicates Cathode Lead; Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 seconds in Solder Bath; Case: Molded Epoxy Epoxy meets UL94, VO at 1/8"; Marking: MRA4003

MRA4004T3GON Semiconductor

Finish: All External Surfaces are Corrosion Resistant and Terminal Leads are Readily Solderable; Weight: 70 mg (Approximately); Compact Package with J-Bend Leads Ideal for Automated Handling; Available in 12 mm Tape, 5000 Units per 13 inch Reel, Add "T3" Suffix to Part Number; Polarity: Notch and Band in Plastic Body Indicates Cathode Lead; Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 seconds in Solder Bath; Case: Molded Epoxy Epoxy meets UL94, VO at 1/8"; Marking: MRA4003

MRA4003T3GON Semiconductor

Weight: 70 mg (Approximately); Finish: All External Surfaces are Corrosion Resistant and Terminal Leads are Readily Solderable; Compact Package with J-Bend Leads Ideal for Automated Handling; Available in 12 mm Tape, 5000 Units per 13 inch Reel, Add "T3" Suffix to Part Number; Polarity: Notch and Band in Plastic Body Indicates Cathode Lead; Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 seconds in Solder Bath; Case: Molded Epoxy Epoxy meets UL94, VO at 1/8"; Marking: MRA4003

MRA4006T3GON Semiconductor

Finish: All External Surfaces are Corrosion Resistant and Terminal Leads are Readily Solderable; Weight: 70 mg (Approximately); Compact Package with J-Bend Leads Ideal for Automated Handling; Available in 12 mm Tape, 5000 Units per 13 inch Reel, Add "T3" Suffix to Part Number; Polarity: Notch and Band in Plastic Body Indicates Cathode Lead; Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 seconds in Solder Bath; Case: Molded Epoxy Epoxy meets UL94, VO at 1/8"; Marking: MRA4003

MR856GON Semiconductor

Use the download button to access the MR856G schematic symbol, PCB footprint, and 3D model.

MR854GON Semiconductor

Use the download button to access the MR854G schematic symbol, PCB footprint, and 3D model.

MR856RLGON Semiconductor

Use the download button to access the MR856RLG schematic symbol, PCB footprint, and 3D model.

MR852RLGON Semiconductor

Use the download button to access the MR852RLG schematic symbol, PCB footprint, and 3D model.

MR851RLGON Semiconductor

Use the download button to access the MR851RLG schematic symbol, PCB footprint, and 3D model.

MMVL3401T1GON Semiconductor

35 V Switching Pin Diode

MR852GON Semiconductor

Use the download button to access the MR852G schematic symbol, PCB footprint, and 3D model.

MMSD701T1GON Semiconductor

Extremely Low Minority Carrier Lifetime; Low Reverse Leakage; Very Low Capacitance; Pb-Free Packages are Available; S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC Qualified and PPAP Capable

MMSD914T1GON Semiconductor

High Breakdown Voltage; Fast Speed Switching Time; SOD-123 Surface Mount Package; Pb-Free Packages are Available; S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable

MMSD4148T3GON Semiconductor

Fast Speed Switching Time; High Breakdown Voltage; Available in 8 mm Tape and Reel; SOD-123 Surface Mount Package; Pb-Free Packages are Available; S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable

MMSD4148T1GON Semiconductor

Fast Speed Switching Time; High Breakdown Voltage; Available in 8 mm Tape and Reel; SOD-123 Surface Mount Package; Pb-Free Packages are Available; S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable

MMBZ5261BLT1GON Semiconductor

225 mW Rating on FR-4 or FR-5 Board; Zener Voltage Range - 2.4 V to 91 V; Package Designed for Optimal Automated Board Assembly; Small Package Size for High Density Applications; ESD Rating of Class 3 (>16 KV) per Human Body Model Mechanical Characteristics; CASE: Void-free, transfer-molded, thermosetting plastic case; FINISH: Corrosion resistant finish, easily solderable; MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260C for 10 Seconds; POLARITY: Cathode indicated by polarity band; FLAMMABILITY RATING:

MMSD103T1GON Semiconductor

Use the download button to access the MMSD103T1G schematic symbol, PCB footprint, and 3D model.

MMDL914T1GON Semiconductor

These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant; S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable

MMDL6050T1GON Semiconductor

Use the download button to access the MMDL6050T1G schematic symbol, PCB footprint, and 3D model.

MMBZ5V6ALT1GON Semiconductor

SOT-23 Package Allows Either Two Separate Unidirectional Configurations or a Single Bidirectional Configuration; Working Peak Reverse Voltage Range - 3 V to 26 V; Standard Zener Breakdown Voltage Range - 5.6 V to 33 V; Peak Power - 24 or 40 Watts @ 1.0 ms (Unidirectional); ESD Rating of Class N (exceeding 16 kV) per the Human Body Model; Maximum Clamping Voltage @ Peak Pulse Current; Low Leakage < 5.0 µ A; Flammability Rating UL 94V-O Mechanical Characteristics:; CASE: Void-free, transfer-molded, thermosett

MMBZ27VALT1GON Semiconductor

SOT-23 Package Allows Either Two Separate Unidirectional Configurations or a Single Bidirectional Configuration; Working Peak Reverse Voltage Range - 3 V to 26 V; Standard Zener Breakdown Voltage Range - 5.6 V to 33 V; Peak Power - 24 or 40 Watts @ 1.0 ms (Unidirectional); ESD Rating of Class N (exceeding 16 kV) per the Human Body Model; Maximum Clamping Voltage @ Peak Pulse Current; Low Leakage < 5.0 µ A; Flammability Rating UL 94V-O Mechanical Characteristics:; CASE: Void-free, transfer-molded, thermosett

MMBZ27VCLT1GON Semiconductor

SOT-23, 3 PIN

MMDL301T1GON Semiconductor

Device Marking: 4T; Extremely Low Minority Carrier Lifetime - 15 ps (Typ); Low Reverse Leakage - IR = 13 nAdc (Typ); Very Low Capacitance - 1.5 pF (Max) @ VR = 15 V; Pb-Free Package is Available

MMBZ18VALT1GON Semiconductor

SOT-23 Package Allows Either Two Separate Unidirectional Configurations or a Single Bidirectional Configuration; Working Peak Reverse Voltage Range - 3 V to 26 V; Standard Zener Breakdown Voltage Range - 5.6 V to 33 V; Peak Power - 24 or 40 Watts @ 1.0 ms (Unidirectional); ESD Rating of Class N (exceeding 16 kV) per the Human Body Model; Maximum Clamping Voltage @ Peak Pulse Current; Low Leakage < 5.0 µ A; Flammability Rating UL 94V-O Mechanical Characteristics:; CASE: Void-free, transfer-molded, thermosett

MMBZ15VDLT1GON Semiconductor

Working Peak Reverse Voltage Range - 12.8 V, 22 V; SOT-23 Package Allows Either Two Separate Unidirectional Configurations or a Single Bidirectional Configuration; Standard Zener Breakdown Voltage Range - 15 V, 27 V; Peak Power : 40 Watts @ 1.0 ms (Bidirectional); ESD Rating of Class N (exceeding 16 kV) per the Human Body Model; Maximum Clamping Voltage @ Peak Pulse Current; Low Leakage < 100 nA; Flammability Rating UL 94V-O Mechanical Characteristics:; CASE: Void-free, transfer-molded, thermosetting plasti

MMBD7000LT1GON Semiconductor

Low Reverse Leakage; Extremely Low Minority Carrier Lifetime; Available in 8 mm Tape and Reel; Very Low Capacitance; Pb-Free Packages are Available; S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable

MMBD914LT3GON Semiconductor

These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant; S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

MMBD914LT1GON Semiconductor

These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant; S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

MMBD352LT1GON Semiconductor

NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC Qualified and PPAP Capable; Low Forward Voltage - 0.5 Volts (Typ) @ IF = 10 mA; Very Low Capacitance - Less Than 1.0 pF @ Zero Volts; Pb-Free Packages are Available

MMBD2838LT1GON Semiconductor

HALOGEN FREE AND ROHS COMPLIANT, CASE 318-18, 3 PIN

MMBD330T1GON Semiconductor

Extremely Low Minority Carrier Lifetime; Very Low Capacitance; Low Reverse Leakage; S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC Qualified and PPAP Capable

MMBD301LT1GON Semiconductor

Low Reverse Leakage - IR = 13 nAdc (Typ) MBD301, MMBD301; Very Low Capacitance - 1.5 pF (Max) @ VR = 15 V; Extremely Low Minority Carrier Lifetime - 15 ps (Typ); Pb-Free Packages are Available; S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC Qualified and PPAP Capable

MBRF20L45CTGON Semiconductor

Use the download button to access the MBRF20L45CTG schematic symbol, PCB footprint, and 3D model.

MBRS540T3GON Semiconductor

Compact Surface Mountable Package with J-Bend leads; Rectangular Package for Automated Handling; Highly Stable Oxide Passivated Junction; Excellent Ability to Withstand Reverse Avalanche Energy Transients; Guardring for Stress Protection; Cathode Lead Indicated by polarity Notch; ESD Ratings, Machine Model = C, Human Body Model = 3B; Device Meets MSL 1 Requirements; Pb-Free Package is Available; AEC-Q101 Qualified and PPAP Capable; NRVB Prefix for Automotive and Other Applications Requiring Unique Site and

MBRS330T3GON Semiconductor

Case: Epoxy, Molded; Small Compact Surface Mountable Package with J-Bend Leads; Shipped in 16 mm Tape and Reel, 2500 units per reel; Excellent Ability to Withstand Reverse Avalanche Energy Transients; Rectangular Package for Automated Handling; Highly Stable Oxide Passivated Junction; Guardring for Stress Protection Mechanical Characteristics:; Weight: 217 mg (approximately); Marking: B32, B33, B34; Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Polarity: Notch

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