Diode

Diode components are essential building blocks in modern electronic systems. FindMyChip sources Diode ICs from authorized China distributors with competitive pricing and reliable stock.

2,158 components

How to Choose Diode Components

  • 1Verify electrical specifications (voltage, current, frequency) match your design requirements.
  • 2Check package footprint and thermal characteristics against your PCB layout constraints.
  • 3Confirm lifecycle status and long-term availability for production designs.

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All Diode Components

Showing 1,151–1,200 of 2,158

NSI45025AT1GON Semiconductor

Robust Power Package: 460 mW, Wide operating voltage range, Immediate turn on Voltage surge suppressing protecting LEDs, AEC-Q101 qualified and PPAP Capable, UL94-V0 certified SBT (Self Biased Transistor) Technology, Negative Temperature Coefficient, This device is PB-Free, Halogen Free/BFR Free and is RoHS Compliant; AEC-Q101 Qualified and PPAP Capable, UL94V0 Certified

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NSI45020T1GON Semiconductor

Robust Power Package: 460 mW, Wide operating voltage range, Immediate turn on Voltage surge suppressing protecting LEDs, AEC-Q101 qualified and PPAP Capable, UL94-V0 certified SBT (Self Biased Transistor) Technology, Negative Temperature Coefficient, This device is PB-Free, Halogen Free/BFR Free and is RoHS Compliant; AEC-Q101 Qualified and PPAP Capable, UL94V0 Certified

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NSI45020AT1GON Semiconductor

Robust Power Package: 460 mW, Wide operating voltage range, Immediate turn on Voltage surge suppressing protecting LEDs, UL94-V0 certified, SBT (Self Biased Transistor) Technology, Negative Temperature Coefficient, This device is PB-Free, Halogen Free/BFR Free and is RoHS Compliant; NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable

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NSI45015WT1GON Semiconductor

Robust power package: 460 mW; Wide operating voltage range, Immediate turn on, voltage surge suppressing protecting LEDs, SBT (Self Biased Transistor) technology, Negative temperature coefficient; NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable; These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant

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NSI45025T1GON Semiconductor

Robust Power Package: 460 mW, Wide operating voltage range, Immediate turn on Voltage surge suppressing protecting LEDs, SBT (Self Biased Transistor) Technology, Negative Temperature Coefficient, This device is PB-Free, Halogen Free/BFR Free and is RoHS Compliant; AEC-Q101 Qualified and PPAP Capable, UL94-V0 Certified

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NRVBS3201T3GON Semiconductor

Lower Forward Voltage than any Ultrafast Rectifier: VF < 0.59 V at 150C; Fast Switching Speed: Reverse Recovery Time (tRR) < 35 ns; Soft Recovery Characteristics: Softness Factor (tb/ta) < 1; Highly Stable Over Temperature; Pb-Free Package is Available; NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements

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NRVUD550PFT4GON Semiconductor

Power Rectifier, Switch-mode, Ultrafast, 5.0 A, 520 V, for Power Factor Correction

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NRVTS260ESFT1GON Semiconductor

Fine Lithography Trench−based Schottky Technology for Very Low Leakage; Fast Switching with Exceptional Temperature Stability; Low Power Loss and Lower Operating Temperature; Higher Efficiency for Achieving Regulatory Compliance; Low Thermal Resistance; High Surge Capability; These are Pb−Free and Halide−Free Devices

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NRVBD660CTGON Semiconductor

Schottky Power Rectifier, Switch-mode, 6 A, 60 V

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NRVBS3100T3GON Semiconductor

Small Compact Surface Mountable Package with J-Bend Leads; Rectangular Package for Automated Handling; Highly Stable Oxide Passivated Junction; Excellent Ability to Withstand Reverse Avalanche Energy Transients; Guardring for Stress Protection Mechanical Characteristics:; Case: Epoxy, Molded; Weight: 217 mg (approximately); Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds; Ship

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NRVBA340T3GON Semiconductor

Use the download button to access the NRVBA340T3G schematic symbol, PCB footprint, and 3D model.

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NBRD5H100T4GON Semiconductor

Guardring for Stress Protection; Low Forward Voltage; 175°C Operating Junction Temperature; Epoxy Meets UL 94 V-0 @ 0.125 in; Short Heat Sink Tab Manufactured - Not Sheared!; NBRD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

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MUR1520GON Semiconductor

175 C Operating Junction Temperature; Low Forward Drop; Ultrafast 35 and 60 Nanosecond Recovery Time; High Voltage Capability to 600 Volts; Low Leakage Specified @ 150 C Case Temperature; Lead Temperature for Soldering Purposes: 260 C Max. for 10 Seconds; Case: Epoxy, Molded; Current Derating Specified @ Both Case and Ambient Temperatures Mechanical Characteristics:; Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Weight: 1.9 grams (approximately); AEC-Q101 Quali

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MUR420GON Semiconductor

• Ultrafast 25 ns, 50 ns and 75 ns Recovery Times • 175°C Operating Junction Temperature • Low Forward Voltage • Low Leakage Current • High Temperature Glass Passivated Junction • Reverse Voltage to 600 V • Shipped in Plastic Bags, 500 per Bag • Available in Tape and Reel, 1500 per Reel, by Adding a “RLG’’ Suffix to the Part Number • MUR460 available in Fan Fold Ammo Pak, 1000 per Box, by adding a “FFG” suffix to the part number • These are Pb−Free Packages*

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MURA230T3GON Semiconductor

Small Compact Surface Mountable Package with J-Bend Leads; Rectangular Package for Automated Handling; High Temperature Glass Passivated Junction; Low Forward Voltage Drop (0.95 Volts Max @ 2.0 A, TJ = 150°C) Mechanical Characteristics:; Case: Epoxy, Molded; Weight: 70 mg (approximately); Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds; Shipped in 12 mm Tape and Reel, 5000 uni

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MURS480ET3GON Semiconductor

20mJ Avalanche Energy Guaranteed; Excellent Protection Against Voltage Transients in Switching Inductive Load Circuits; Ultrafast 75 Nanosecond Recovery Time; 175C Operating Junction Temperature; Low Forward Voltage; Low Leakage Current; High Temperature Glass Passivated Junction; Reverse Voltage to 800V; This is a Pb-Free Device; Case: Epoxy, Molded; Weight: 217 mg (Approximately); Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Lead Temperature for Soldering Pu

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MURS260T3GON Semiconductor

Finish: All External Surfaces Corrosion Resistant and TerminalLeads are Readily Solderable; Weight: 95 mg (approximately); High Temperature Glass Passivated Junction; Polarity: Polarity Band Indicates Cathode Lead; Small Compact Surface Mountable Package with J-Bend Leads; Case: Epoxy, Molded; Low Forward Voltage Drop (1.20 Volts Max @ 2.0 A, TJ = 150?C) Mechanical Characteristics:; Rectangular Package for Automated Handling; Lead and Mounting Surface Temperature for Soldering Purposes:260°C Max. for 10 Sec

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MURS340T3GON Semiconductor

Marking: U3D, U3G, U3J; Highly Stable Oxide Passivated Junction; Weight: 217 mg (approximately); Lead and Mounting Surface Temperature for Soldering Purposes: 260 C Max. for 10 Seconds; Polarity: Notch in Plastic Body Indicates Cathode Lead; Small Compact Surface Mountable Package with J-Bend Leads; Shipped in 16 mm Tape and Reel, 2500 units per reel; Case: Epoxy, Molded; Low Forward Voltage Drop (0.71 to 1.05 Volts Max @ 3.0 A, TJ = 150 C) Mechanical Characteristics:; Rectangular Package for Automated Hand

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MURS360T3GON Semiconductor

Marking: U3D, U3G, U3J; Highly Stable Oxide Passivated Junction; Weight: 217 mg (approximately); Lead and Mounting Surface Temperature for Soldering Purposes: 260 C Max. for 10 Seconds; Polarity: Notch in Plastic Body Indicates Cathode Lead; Small Compact Surface Mountable Package with J-Bend Leads; Shipped in 16 mm Tape and Reel, 2500 units per reel; Case: Epoxy, Molded; Low Forward Voltage Drop (0.71 to 1.05 Volts Max @ 3.0 A, TJ = 150 C) Mechanical Characteristics:; Rectangular Package for Automated Hand

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MURS360BT3GON Semiconductor

Marking: B36B; Highly Stable Oxide Passivated Junction; Weight: 95 mg (approximately); Polarity: Polarity Band Indicates Cathode Lead; Small Compact Surface Mountable Package with J-Bend Leads; Shipped in 16 mm Tape and Reel, 2500 units per reel; Case: Epoxy, Molded; Rectangular Package for Automated Handling; Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Pb-Free Package; Device Meets MSL 1 Requirements; SURS8 and SURS Prefixes for Automotive and Other Applicat

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MURA210T3GON Semiconductor

Small Compact Surface Mountable Package with J-Bend Leads; Rectangular Package for Automated Handling; High Temperature Glass Passivated Junction; Low Forward Voltage Drop (0.74 Volts Max @ 2.0 A, TJ = 150?C) Mechanical Characteristics:; Case: Epoxy, Molded; Weight: 70 mg (approximately); Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds; Shipped in 12 mm Tape and Reel, 5000 uni

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MURS320T3GON Semiconductor

Marking: U3D, U3G, U3J; Highly Stable Oxide Passivated Junction; Weight: 217 mg (approximately); Lead and Mounting Surface Temperature for Soldering Purposes: 260 C Max. for 10 Seconds; Polarity: Notch in Plastic Body Indicates Cathode Lead; Small Compact Surface Mountable Package with J-Bend Leads; Shipped in 16 mm Tape and Reel, 2500 units per reel; Case: Epoxy, Molded; Low Forward Voltage Drop (0.71 to 1.05 Volts Max @ 3.0 A, TJ = 150 C) Mechanical Characteristics:; Rectangular Package for Automated Hand

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MURS120T3GON Semiconductor

Small Compact Surface Mountable Package with J-Bend Leads; Low Forward Voltage Drop (0.71 to 1.05 Volts Max @ 1.0 A, TJ = 150?C) Mechanical Characteristics:; Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Rectangular Package for Automated Handling; Case: Epoxy, Molded; Weight: 95 mg (approximately); Polarity: Polarity Band Indicates Cathode Lead; Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds; High Temperature Glass Passi

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MURS140T3GON Semiconductor

Small Compact Surface Mountable Package with J-Bend Leads; Low Forward Voltage Drop (0.71 to 1.05 Volts Max @ 1.0 A, TJ = 150?C) Mechanical Characteristics:; Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Rectangular Package for Automated Handling; Case: Epoxy, Molded; Weight: 95 mg (approximately); Polarity: Polarity Band Indicates Cathode Lead; Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds; High Temperature Glass Passi

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MURS220T3GON Semiconductor

Small Compact Surface Mountable Package with J-Bend Leads; Marking: U2D; Polarity: Polarity Band Indicates Cathode Lead; Shipped in 12 mm Tape and Reel, 2500 units per reel; Weight: 95 mg (approximately); High Temperature Glass Passivated Junction; Low Forward Voltage Drop (0.77 Volts Max @ 2.0 A, TJ = 150?C) Mechanical Characteristics:; Rectangular Package for Automated Handling; Finish: All External Surfaces Corrosion Resistant and TerminalLeads are Readily Solderable; Case: Epoxy, Molded; Lead and Mounti

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MURS240T3GON Semiconductor

Case: Epoxy, Molded; Small Compact Surface Mountable Package with J-Bend Leads; Rectangular Package for Automated Handling; High Temperature Glass Passivated Junction; Low Forward Voltage Drop (0.95 Volts Max @ 2.0 A, T J = 150°C) Mechanical Characteristics:; Weight: 95 mg (approximately); Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds; Shipped in 12 mm Tape and Reel, 2500 un

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MURS105T3GON Semiconductor

Small Compact Surface Mountable Package with J-Bend Leads; Low Forward Voltage Drop (0.71 to 1.05 Volts Max @ 1.0 A, TJ = 150?C) Mechanical Characteristics:; Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Rectangular Package for Automated Handling; Case: Epoxy, Molded; Weight: 95 mg (approximately); Polarity: Polarity Band Indicates Cathode Lead; Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds; High Temperature Glass Passi

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MURHD560W1T4GON Semiconductor

Ultrafast 30 ns Recovery Times; 175°C Operating Junction Temperature; High Temperature Glass Passivated Junction; High Voltage Capability to 600 V; These are Pb-Free Devices Mechanical Characteristics:; Case: Epoxy, Molded; Epoxy Meets UL 94 V-0 @ 0.125 in; Weight: 0.4 g (Approximately); Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds; ESD Ratings: Machine Model = C (>400V), Human Body Model = 3B

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MURS160T3GON Semiconductor

Low Forward Voltage Drop (0.71 to 1.05 Volts Max @ 1.0 A, TJ = 150?C) Mechanical Characteristics:; Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Rectangular Package for Automated Handling; Case: Epoxy, Molded; Weight: 95 mg (approximately); Polarity: Polarity Band Indicates Cathode Lead; Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds; High Temperature Glass Passivated Junction; These are PB-Free Packages; AEC-Q101 Qualif

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MURS110T3GON Semiconductor

Small Compact Surface Mountable Package with J-Bend Leads; Low Forward Voltage Drop (0.71 to 1.05 Volts Max @ 1.0 A, TJ = 150?C) Mechanical Characteristics:; Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Rectangular Package for Automated Handling; Case: Epoxy, Molded; Weight: 95 mg (approximately); Polarity: Polarity Band Indicates Cathode Lead; Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds; High Temperature Glass Passi

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MURHF860CTGON Semiconductor

High Temperature Glass Passivated Junction; Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Lead Temperature for Soldering Purposes: 260 °C Max. for 10 Seconds; Electrically Isolated. No Isolation Hardware Required.; Case: Epoxy, Molded; Low Leakage Specified @ 150° C Case Temperature Mechanical Characteristics:; 150° C Operating Junction Temperature; Epoxy Meets UL94, VO @ 1/8"; Ultrafast 35 Nanosecond Recovery Times; Weight: 1.9 grams (approximately); Marking:

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MURD320T4GON Semiconductor

Weight: 0.4 gram (approximately); Marking: U320; Low Forward Voltage Drop; Case: Epoxy, Molded; Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Low Leakage Mechanical Characteristics:; Ultrafast 35 Nanosecond Recovery Time; Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds; AEC-Q101 Qualified and PPAP Capable; SURD8 Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements

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MURH840CTGON Semiconductor

Popular TO-220 Package; Current Derating @ Both Case and Ambient Temperatures Mechanical Characteristics:; High Voltage Capability to 400 Volts; Ultrafast 28 Nanosecond Recovery Time; Marking: UH840; Case: Epoxy, Molded; Epoxy Meets UL94, VO @ 1/8"; High Temperature Glass Passivated Junction; 175 C Operating Junction Temperature; Low Leakage Specified @ 150 C Case Temperature; Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Weight: 1.9 grams (approximately); Lead

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MURD620CTGON Semiconductor

Low Leakage Mechanical Characteristics:; Low Forward Voltage Drop; Ultrafast 35 Nanosecond Recovery Time; Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Marking: U620T; Case: Epoxy, Molded; Weight: 0.4 gram (approximately); Lead and Mounting Surface Temperature for Soldering Purposes: 260 C Max. for 10 Seconds; AEC-Q101 Qualified and PPAP Capable; NRVU Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements

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MURA220T3GON Semiconductor

Small Compact Surface Mountable Package with J-Bend Leads; Rectangular Package for Automated Handling; High Temperature Glass Passivated Junction; Low Forward Voltage Drop (0.77 Volts Max @ 2.0 A, TJ = 150°C) Mechanical Characteristics:; Case: Epoxy, Molded; Weight: 70 mg (approximately); Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds; Shipped in 12 mm Tape and Reel, 5000 uni

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MURHD560T4GON Semiconductor

Ultrafast 30 ns Recovery Times; 175°C Operating Junction Temperature; High Temperature Glass Passivated Junction; High Voltage Capability to 600 V; These are Pb-Free Devices Mechanical Characteristics:; Case: Epoxy, Molded; Epoxy Meets UL 94 V-0 @ 0.125 in; Weight: 0.4 g (Approximately); Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds; ESD Ratings: Machine Model = C (>400V), Human Body Model = 3B

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MURD620CTT4GON Semiconductor

Low Leakage Mechanical Characteristics:; Low Forward Voltage Drop; Ultrafast 35 Nanosecond Recovery Time; Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Marking: U620T; Case: Epoxy, Molded; Weight: 0.4 gram (approximately); Lead and Mounting Surface Temperature for Soldering Purposes: 260 C Max. for 10 Seconds; AEC-Q101 Qualified and PPAP Capable; NRVU Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements

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MURA160T3GON Semiconductor

Small Compact Surface Mountable Package with J-Bend Leads; Rectangular Package for Automated Handling; High Temperature Glass Passivated Junction; Low Forward Voltage Drop (1.05 Volts Max @ 1.0 A, TJ = 150°C) Mechanical Characteristics:; Case: Epoxy, Molded; Weight: 70 mg (approximately); Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds; Shipped in 12 mm Tape and Reel, 5000 uni

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MURA110T3GON Semiconductor

Small Compact Surface Mountable Package with J-Bend Leads; Rectangular Package for Automated Handling; High Temperature Glass Passivated Junction; Low Forward Voltage Drop (0.66 Volts Max @ 1.0 A, TJ = 150?C) Mechanical Characteristics:; Case: Epoxy, Molded; Weight: 70 mg (approximately); Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds; Polarity: Polarity Band Indicates Cathod

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MUR840GON Semiconductor

Lead Temperature for Soldering Purposes: 260 C Max. for 10 Seconds; Epoxy Meets UL94, VO @ 1/8"; 175 C Operating Junction Temperature; Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Case: Epoxy, Molded; Low Forward Voltage; Ultrafast 25, 50 and 75 Nanosecond Recovery Time; Weight: 1.9 grams (approximately); Reverse Voltage to 600 Volts Mechanical Characteristics:; Low Leakage Current; AEC-Q101 Qualified and PPAP Capable; SUR8 Prefix for Automotive and Other Appl

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MURA120T3GON Semiconductor

Small Compact Surface Mountable Package with J-Bend Leads; Rectangular Package for Automated Handling; High Temperature Glass Passivated Junction; Low Forward Voltage Drop (0.71 Volts Max @ 1.0 A, TJ = 150?C) Mechanical Characteristics:; Case: Epoxy, Molded; Weight: 70 mg (approximately); Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds; Shipped in 12 mm Tape and Reel, 5000 uni

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MUR880EGON Semiconductor

Weight: 1.9 grams (approximately); Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; 20 mjoules Avalanche Energy Guaranteed; High Temperature Glass Passivated Junction; Ultrafast 75 Nanosecond Recovery Time; Low Leakage Current; Marking: U880E, U8100E; Popular TO-220 Package; Reverse Voltage to 1000 Volts Mechanical Characteristics:; Excellent Protection Against Voltage Transients in Switching Inductive Load Circuits; Low Forward Voltage; Lead Temperature for Solde

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MUR1660CTGON Semiconductor

175 C Operating Junction Temperature; High Temperature Glass Passivated Junction; High Voltage Capability to 600 Volts; Lead Temperature for Soldering Purposes: 260 C Max. for 10 Seconds; Current Derating @ Both Case and Ambient Temperatures Mechanical Characteristics:; Ultrafast 35 and 60 Nanosecond Recovery Times; Marking: U1610, U1615, U1620, U1640, U1660; Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Weight: 1.9 grams (approximately); Case: Epoxy, Molded; L

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MUR820GON Semiconductor

Lead Temperature for Soldering Purposes: 260 C Max. for 10 Seconds; Epoxy Meets UL94, VO @ 1/8"; 175 C Operating Junction Temperature; Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Case: Epoxy, Molded; Low Forward Voltage; Ultrafast 25, 50 and 75 Nanosecond Recovery Time; Weight: 1.9 grams (approximately); Reverse Voltage to 600 Volts Mechanical Characteristics:; Low Leakage Current; AEC-Q101 Qualified and PPAP Capable; SUR8 Prefix for Automotive and Other Appl

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MUR460GON Semiconductor

Low Leakage Current; Marking: MUR405, MUR410, MUR415, MUR420, MUR440, MUR460; Case: Epoxy, Molded; Ultrafast 25, 50 and 75 Nanosecond Recovery Times; Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds; Polarity: Cathode indicated by Polarity Band; High Temperature Glass Passivated Junction; Reverse Voltage to 600 Volts Mechanical Characteristics:; 175°C Operating Junction Temperature; Weight: 1.1 gra

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MUR240GON Semiconductor

LEAD FREE, PLASTIC, CASE 59-10, 2 PIN

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MUR260GON Semiconductor

LEAD FREE, PLASTIC, CASE 59-10, 2 PIN

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MUR440GON Semiconductor

Use the download button to access the MUR440G schematic symbol, PCB footprint, and 3D model.

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MUR4100EGON Semiconductor

20 mjoules Avalanche Energy Guaranteed; Excellent Protection Against Voltage Transients in Switching Inductive Load Circuits; Ultrafast 75 Nanosecond Recovery Time; 175°C Operating Junction Temperature; Low Forward Voltage; Low Leakage Current; High Temperature Glass Passivated Junction; Marking: MUR480E, MUR4100E; Polarity: Cathode Indicated by Polarity Band; Case: Epoxy, Molded; Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds; Finish: All External Surfaces Corrosion Resistant and Termin

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MUR8100EGON Semiconductor

Weight: 1.9 grams (approximately); Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; 20 mjoules Avalanche Energy Guaranteed; High Temperature Glass Passivated Junction; Ultrafast 75 Nanosecond Recovery Time; Low Leakage Current; Marking: U880E, U8100E; Reverse Voltage to 1000 Volts Mechanical Characteristics:; Excellent Protection Against Voltage Transients in Switching Inductive Load Circuits; Low Forward Voltage; Lead Temperature for Soldering Purposes: 260°C Max

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