Diode

Diode components are essential building blocks in modern electronic systems. FindMyChip sources Diode ICs from authorized China distributors with competitive pricing and reliable stock.

2,158 components

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All Diode Components

Showing 1,1511,200 of 2,158

NSI45025AT1GON Semiconductor

Robust Power Package: 460 mW, Wide operating voltage range, Immediate turn on Voltage surge suppressing protecting LEDs, AEC-Q101 qualified and PPAP Capable, UL94-V0 certified SBT (Self Biased Transistor) Technology, Negative Temperature Coefficient, This device is PB-Free, Halogen Free/BFR Free and is RoHS Compliant; AEC-Q101 Qualified and PPAP Capable, UL94V0 Certified

NSI45020T1GON Semiconductor

Robust Power Package: 460 mW, Wide operating voltage range, Immediate turn on Voltage surge suppressing protecting LEDs, AEC-Q101 qualified and PPAP Capable, UL94-V0 certified SBT (Self Biased Transistor) Technology, Negative Temperature Coefficient, This device is PB-Free, Halogen Free/BFR Free and is RoHS Compliant; AEC-Q101 Qualified and PPAP Capable, UL94V0 Certified

NSI45020AT1GON Semiconductor

Robust Power Package: 460 mW, Wide operating voltage range, Immediate turn on Voltage surge suppressing protecting LEDs, UL94-V0 certified, SBT (Self Biased Transistor) Technology, Negative Temperature Coefficient, This device is PB-Free, Halogen Free/BFR Free and is RoHS Compliant; NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable

NSI45015WT1GON Semiconductor

Robust power package: 460 mW; Wide operating voltage range, Immediate turn on, voltage surge suppressing protecting LEDs, SBT (Self Biased Transistor) technology, Negative temperature coefficient; NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable; These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant

NSI45025T1GON Semiconductor

Robust Power Package: 460 mW, Wide operating voltage range, Immediate turn on Voltage surge suppressing protecting LEDs, SBT (Self Biased Transistor) Technology, Negative Temperature Coefficient, This device is PB-Free, Halogen Free/BFR Free and is RoHS Compliant; AEC-Q101 Qualified and PPAP Capable, UL94-V0 Certified

NRVBS3201T3GON Semiconductor

Lower Forward Voltage than any Ultrafast Rectifier: VF < 0.59 V at 150C; Fast Switching Speed: Reverse Recovery Time (tRR) < 35 ns; Soft Recovery Characteristics: Softness Factor (tb/ta) < 1; Highly Stable Over Temperature; Pb-Free Package is Available; NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements

NRVUD550PFT4GON Semiconductor

Power Rectifier, Switch-mode, Ultrafast, 5.0 A, 520 V, for Power Factor Correction

NRVTS260ESFT1GON Semiconductor

Fine Lithography Trench−based Schottky Technology for Very Low Leakage; Fast Switching with Exceptional Temperature Stability; Low Power Loss and Lower Operating Temperature; Higher Efficiency for Achieving Regulatory Compliance; Low Thermal Resistance; High Surge Capability; These are Pb−Free and Halide−Free Devices

NRVBD660CTGON Semiconductor

Schottky Power Rectifier, Switch-mode, 6 A, 60 V

NRVBS3100T3GON Semiconductor

Small Compact Surface Mountable Package with J-Bend Leads; Rectangular Package for Automated Handling; Highly Stable Oxide Passivated Junction; Excellent Ability to Withstand Reverse Avalanche Energy Transients; Guardring for Stress Protection Mechanical Characteristics:; Case: Epoxy, Molded; Weight: 217 mg (approximately); Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds; Ship

NRVBA340T3GON Semiconductor

Use the download button to access the NRVBA340T3G schematic symbol, PCB footprint, and 3D model.

NBRD5H100T4GON Semiconductor

Guardring for Stress Protection; Low Forward Voltage; 175°C Operating Junction Temperature; Epoxy Meets UL 94 V-0 @ 0.125 in; Short Heat Sink Tab Manufactured - Not Sheared!; NBRD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

MUR1520GON Semiconductor

175 C Operating Junction Temperature; Low Forward Drop; Ultrafast 35 and 60 Nanosecond Recovery Time; High Voltage Capability to 600 Volts; Low Leakage Specified @ 150 C Case Temperature; Lead Temperature for Soldering Purposes: 260 C Max. for 10 Seconds; Case: Epoxy, Molded; Current Derating Specified @ Both Case and Ambient Temperatures Mechanical Characteristics:; Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Weight: 1.9 grams (approximately); AEC-Q101 Quali

MUR420GON Semiconductor

• Ultrafast 25 ns, 50 ns and 75 ns Recovery Times • 175°C Operating Junction Temperature • Low Forward Voltage • Low Leakage Current • High Temperature Glass Passivated Junction • Reverse Voltage to 600 V • Shipped in Plastic Bags, 500 per Bag • Available in Tape and Reel, 1500 per Reel, by Adding a “RLG’’ Suffix to the Part Number • MUR460 available in Fan Fold Ammo Pak, 1000 per Box, by adding a “FFG” suffix to the part number • These are Pb−Free Packages*

MURA230T3GON Semiconductor

Small Compact Surface Mountable Package with J-Bend Leads; Rectangular Package for Automated Handling; High Temperature Glass Passivated Junction; Low Forward Voltage Drop (0.95 Volts Max @ 2.0 A, TJ = 150°C) Mechanical Characteristics:; Case: Epoxy, Molded; Weight: 70 mg (approximately); Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds; Shipped in 12 mm Tape and Reel, 5000 uni

MURS480ET3GON Semiconductor

20mJ Avalanche Energy Guaranteed; Excellent Protection Against Voltage Transients in Switching Inductive Load Circuits; Ultrafast 75 Nanosecond Recovery Time; 175C Operating Junction Temperature; Low Forward Voltage; Low Leakage Current; High Temperature Glass Passivated Junction; Reverse Voltage to 800V; This is a Pb-Free Device; Case: Epoxy, Molded; Weight: 217 mg (Approximately); Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Lead Temperature for Soldering Pu

MURS260T3GON Semiconductor

Finish: All External Surfaces Corrosion Resistant and TerminalLeads are Readily Solderable; Weight: 95 mg (approximately); High Temperature Glass Passivated Junction; Polarity: Polarity Band Indicates Cathode Lead; Small Compact Surface Mountable Package with J-Bend Leads; Case: Epoxy, Molded; Low Forward Voltage Drop (1.20 Volts Max @ 2.0 A, TJ = 150?C) Mechanical Characteristics:; Rectangular Package for Automated Handling; Lead and Mounting Surface Temperature for Soldering Purposes:260°C Max. for 10 Sec

MURS340T3GON Semiconductor

Marking: U3D, U3G, U3J; Highly Stable Oxide Passivated Junction; Weight: 217 mg (approximately); Lead and Mounting Surface Temperature for Soldering Purposes: 260 C Max. for 10 Seconds; Polarity: Notch in Plastic Body Indicates Cathode Lead; Small Compact Surface Mountable Package with J-Bend Leads; Shipped in 16 mm Tape and Reel, 2500 units per reel; Case: Epoxy, Molded; Low Forward Voltage Drop (0.71 to 1.05 Volts Max @ 3.0 A, TJ = 150 C) Mechanical Characteristics:; Rectangular Package for Automated Hand

MURS360T3GON Semiconductor

Marking: U3D, U3G, U3J; Highly Stable Oxide Passivated Junction; Weight: 217 mg (approximately); Lead and Mounting Surface Temperature for Soldering Purposes: 260 C Max. for 10 Seconds; Polarity: Notch in Plastic Body Indicates Cathode Lead; Small Compact Surface Mountable Package with J-Bend Leads; Shipped in 16 mm Tape and Reel, 2500 units per reel; Case: Epoxy, Molded; Low Forward Voltage Drop (0.71 to 1.05 Volts Max @ 3.0 A, TJ = 150 C) Mechanical Characteristics:; Rectangular Package for Automated Hand

MURS360BT3GON Semiconductor

Marking: B36B; Highly Stable Oxide Passivated Junction; Weight: 95 mg (approximately); Polarity: Polarity Band Indicates Cathode Lead; Small Compact Surface Mountable Package with J-Bend Leads; Shipped in 16 mm Tape and Reel, 2500 units per reel; Case: Epoxy, Molded; Rectangular Package for Automated Handling; Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Pb-Free Package; Device Meets MSL 1 Requirements; SURS8 and SURS Prefixes for Automotive and Other Applicat

MURA210T3GON Semiconductor

Small Compact Surface Mountable Package with J-Bend Leads; Rectangular Package for Automated Handling; High Temperature Glass Passivated Junction; Low Forward Voltage Drop (0.74 Volts Max @ 2.0 A, TJ = 150?C) Mechanical Characteristics:; Case: Epoxy, Molded; Weight: 70 mg (approximately); Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds; Shipped in 12 mm Tape and Reel, 5000 uni

MURS320T3GON Semiconductor

Marking: U3D, U3G, U3J; Highly Stable Oxide Passivated Junction; Weight: 217 mg (approximately); Lead and Mounting Surface Temperature for Soldering Purposes: 260 C Max. for 10 Seconds; Polarity: Notch in Plastic Body Indicates Cathode Lead; Small Compact Surface Mountable Package with J-Bend Leads; Shipped in 16 mm Tape and Reel, 2500 units per reel; Case: Epoxy, Molded; Low Forward Voltage Drop (0.71 to 1.05 Volts Max @ 3.0 A, TJ = 150 C) Mechanical Characteristics:; Rectangular Package for Automated Hand

MURS120T3GON Semiconductor

Small Compact Surface Mountable Package with J-Bend Leads; Low Forward Voltage Drop (0.71 to 1.05 Volts Max @ 1.0 A, TJ = 150?C) Mechanical Characteristics:; Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Rectangular Package for Automated Handling; Case: Epoxy, Molded; Weight: 95 mg (approximately); Polarity: Polarity Band Indicates Cathode Lead; Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds; High Temperature Glass Passi

MURS140T3GON Semiconductor

Small Compact Surface Mountable Package with J-Bend Leads; Low Forward Voltage Drop (0.71 to 1.05 Volts Max @ 1.0 A, TJ = 150?C) Mechanical Characteristics:; Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Rectangular Package for Automated Handling; Case: Epoxy, Molded; Weight: 95 mg (approximately); Polarity: Polarity Band Indicates Cathode Lead; Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds; High Temperature Glass Passi

MURS220T3GON Semiconductor

Small Compact Surface Mountable Package with J-Bend Leads; Marking: U2D; Polarity: Polarity Band Indicates Cathode Lead; Shipped in 12 mm Tape and Reel, 2500 units per reel; Weight: 95 mg (approximately); High Temperature Glass Passivated Junction; Low Forward Voltage Drop (0.77 Volts Max @ 2.0 A, TJ = 150?C) Mechanical Characteristics:; Rectangular Package for Automated Handling; Finish: All External Surfaces Corrosion Resistant and TerminalLeads are Readily Solderable; Case: Epoxy, Molded; Lead and Mounti

MURS240T3GON Semiconductor

Case: Epoxy, Molded; Small Compact Surface Mountable Package with J-Bend Leads; Rectangular Package for Automated Handling; High Temperature Glass Passivated Junction; Low Forward Voltage Drop (0.95 Volts Max @ 2.0 A, T J = 150°C) Mechanical Characteristics:; Weight: 95 mg (approximately); Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds; Shipped in 12 mm Tape and Reel, 2500 un

MURS105T3GON Semiconductor

Small Compact Surface Mountable Package with J-Bend Leads; Low Forward Voltage Drop (0.71 to 1.05 Volts Max @ 1.0 A, TJ = 150?C) Mechanical Characteristics:; Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Rectangular Package for Automated Handling; Case: Epoxy, Molded; Weight: 95 mg (approximately); Polarity: Polarity Band Indicates Cathode Lead; Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds; High Temperature Glass Passi

MURHD560W1T4GON Semiconductor

Ultrafast 30 ns Recovery Times; 175°C Operating Junction Temperature; High Temperature Glass Passivated Junction; High Voltage Capability to 600 V; These are Pb-Free Devices Mechanical Characteristics:; Case: Epoxy, Molded; Epoxy Meets UL 94 V-0 @ 0.125 in; Weight: 0.4 g (Approximately); Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds; ESD Ratings: Machine Model = C (>400V), Human Body Model = 3B

MURS160T3GON Semiconductor

Low Forward Voltage Drop (0.71 to 1.05 Volts Max @ 1.0 A, TJ = 150?C) Mechanical Characteristics:; Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Rectangular Package for Automated Handling; Case: Epoxy, Molded; Weight: 95 mg (approximately); Polarity: Polarity Band Indicates Cathode Lead; Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds; High Temperature Glass Passivated Junction; These are PB-Free Packages; AEC-Q101 Qualif

MURS110T3GON Semiconductor

Small Compact Surface Mountable Package with J-Bend Leads; Low Forward Voltage Drop (0.71 to 1.05 Volts Max @ 1.0 A, TJ = 150?C) Mechanical Characteristics:; Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Rectangular Package for Automated Handling; Case: Epoxy, Molded; Weight: 95 mg (approximately); Polarity: Polarity Band Indicates Cathode Lead; Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds; High Temperature Glass Passi

MURHF860CTGON Semiconductor

High Temperature Glass Passivated Junction; Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Lead Temperature for Soldering Purposes: 260 °C Max. for 10 Seconds; Electrically Isolated. No Isolation Hardware Required.; Case: Epoxy, Molded; Low Leakage Specified @ 150° C Case Temperature Mechanical Characteristics:; 150° C Operating Junction Temperature; Epoxy Meets UL94, VO @ 1/8"; Ultrafast 35 Nanosecond Recovery Times; Weight: 1.9 grams (approximately); Marking:

MURD320T4GON Semiconductor

Weight: 0.4 gram (approximately); Marking: U320; Low Forward Voltage Drop; Case: Epoxy, Molded; Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Low Leakage Mechanical Characteristics:; Ultrafast 35 Nanosecond Recovery Time; Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds; AEC-Q101 Qualified and PPAP Capable; SURD8 Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements

MURH840CTGON Semiconductor

Popular TO-220 Package; Current Derating @ Both Case and Ambient Temperatures Mechanical Characteristics:; High Voltage Capability to 400 Volts; Ultrafast 28 Nanosecond Recovery Time; Marking: UH840; Case: Epoxy, Molded; Epoxy Meets UL94, VO @ 1/8"; High Temperature Glass Passivated Junction; 175 C Operating Junction Temperature; Low Leakage Specified @ 150 C Case Temperature; Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Weight: 1.9 grams (approximately); Lead

MURD620CTGON Semiconductor

Low Leakage Mechanical Characteristics:; Low Forward Voltage Drop; Ultrafast 35 Nanosecond Recovery Time; Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Marking: U620T; Case: Epoxy, Molded; Weight: 0.4 gram (approximately); Lead and Mounting Surface Temperature for Soldering Purposes: 260 C Max. for 10 Seconds; AEC-Q101 Qualified and PPAP Capable; NRVU Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements

MURA220T3GON Semiconductor

Small Compact Surface Mountable Package with J-Bend Leads; Rectangular Package for Automated Handling; High Temperature Glass Passivated Junction; Low Forward Voltage Drop (0.77 Volts Max @ 2.0 A, TJ = 150°C) Mechanical Characteristics:; Case: Epoxy, Molded; Weight: 70 mg (approximately); Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds; Shipped in 12 mm Tape and Reel, 5000 uni

MURHD560T4GON Semiconductor

Ultrafast 30 ns Recovery Times; 175°C Operating Junction Temperature; High Temperature Glass Passivated Junction; High Voltage Capability to 600 V; These are Pb-Free Devices Mechanical Characteristics:; Case: Epoxy, Molded; Epoxy Meets UL 94 V-0 @ 0.125 in; Weight: 0.4 g (Approximately); Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds; ESD Ratings: Machine Model = C (>400V), Human Body Model = 3B

MURD620CTT4GON Semiconductor

Low Leakage Mechanical Characteristics:; Low Forward Voltage Drop; Ultrafast 35 Nanosecond Recovery Time; Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Marking: U620T; Case: Epoxy, Molded; Weight: 0.4 gram (approximately); Lead and Mounting Surface Temperature for Soldering Purposes: 260 C Max. for 10 Seconds; AEC-Q101 Qualified and PPAP Capable; NRVU Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements

MURA160T3GON Semiconductor

Small Compact Surface Mountable Package with J-Bend Leads; Rectangular Package for Automated Handling; High Temperature Glass Passivated Junction; Low Forward Voltage Drop (1.05 Volts Max @ 1.0 A, TJ = 150°C) Mechanical Characteristics:; Case: Epoxy, Molded; Weight: 70 mg (approximately); Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds; Shipped in 12 mm Tape and Reel, 5000 uni

MURA110T3GON Semiconductor

Small Compact Surface Mountable Package with J-Bend Leads; Rectangular Package for Automated Handling; High Temperature Glass Passivated Junction; Low Forward Voltage Drop (0.66 Volts Max @ 1.0 A, TJ = 150?C) Mechanical Characteristics:; Case: Epoxy, Molded; Weight: 70 mg (approximately); Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds; Polarity: Polarity Band Indicates Cathod

MUR840GON Semiconductor

Lead Temperature for Soldering Purposes: 260 C Max. for 10 Seconds; Epoxy Meets UL94, VO @ 1/8"; 175 C Operating Junction Temperature; Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Case: Epoxy, Molded; Low Forward Voltage; Ultrafast 25, 50 and 75 Nanosecond Recovery Time; Weight: 1.9 grams (approximately); Reverse Voltage to 600 Volts Mechanical Characteristics:; Low Leakage Current; AEC-Q101 Qualified and PPAP Capable; SUR8 Prefix for Automotive and Other Appl

MURA120T3GON Semiconductor

Small Compact Surface Mountable Package with J-Bend Leads; Rectangular Package for Automated Handling; High Temperature Glass Passivated Junction; Low Forward Voltage Drop (0.71 Volts Max @ 1.0 A, TJ = 150?C) Mechanical Characteristics:; Case: Epoxy, Molded; Weight: 70 mg (approximately); Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds; Shipped in 12 mm Tape and Reel, 5000 uni

MUR880EGON Semiconductor

Weight: 1.9 grams (approximately); Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; 20 mjoules Avalanche Energy Guaranteed; High Temperature Glass Passivated Junction; Ultrafast 75 Nanosecond Recovery Time; Low Leakage Current; Marking: U880E, U8100E; Popular TO-220 Package; Reverse Voltage to 1000 Volts Mechanical Characteristics:; Excellent Protection Against Voltage Transients in Switching Inductive Load Circuits; Low Forward Voltage; Lead Temperature for Solde

MUR1660CTGON Semiconductor

175 C Operating Junction Temperature; High Temperature Glass Passivated Junction; High Voltage Capability to 600 Volts; Lead Temperature for Soldering Purposes: 260 C Max. for 10 Seconds; Current Derating @ Both Case and Ambient Temperatures Mechanical Characteristics:; Ultrafast 35 and 60 Nanosecond Recovery Times; Marking: U1610, U1615, U1620, U1640, U1660; Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Weight: 1.9 grams (approximately); Case: Epoxy, Molded; L

MUR820GON Semiconductor

Lead Temperature for Soldering Purposes: 260 C Max. for 10 Seconds; Epoxy Meets UL94, VO @ 1/8"; 175 C Operating Junction Temperature; Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Case: Epoxy, Molded; Low Forward Voltage; Ultrafast 25, 50 and 75 Nanosecond Recovery Time; Weight: 1.9 grams (approximately); Reverse Voltage to 600 Volts Mechanical Characteristics:; Low Leakage Current; AEC-Q101 Qualified and PPAP Capable; SUR8 Prefix for Automotive and Other Appl

MUR460GON Semiconductor

Low Leakage Current; Marking: MUR405, MUR410, MUR415, MUR420, MUR440, MUR460; Case: Epoxy, Molded; Ultrafast 25, 50 and 75 Nanosecond Recovery Times; Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds; Polarity: Cathode indicated by Polarity Band; High Temperature Glass Passivated Junction; Reverse Voltage to 600 Volts Mechanical Characteristics:; 175°C Operating Junction Temperature; Weight: 1.1 gra

MUR240GON Semiconductor

LEAD FREE, PLASTIC, CASE 59-10, 2 PIN

MUR260GON Semiconductor

LEAD FREE, PLASTIC, CASE 59-10, 2 PIN

MUR440GON Semiconductor

Use the download button to access the MUR440G schematic symbol, PCB footprint, and 3D model.

MUR4100EGON Semiconductor

20 mjoules Avalanche Energy Guaranteed; Excellent Protection Against Voltage Transients in Switching Inductive Load Circuits; Ultrafast 75 Nanosecond Recovery Time; 175°C Operating Junction Temperature; Low Forward Voltage; Low Leakage Current; High Temperature Glass Passivated Junction; Marking: MUR480E, MUR4100E; Polarity: Cathode Indicated by Polarity Band; Case: Epoxy, Molded; Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds; Finish: All External Surfaces Corrosion Resistant and Termin

MUR8100EGON Semiconductor

Weight: 1.9 grams (approximately); Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; 20 mjoules Avalanche Energy Guaranteed; High Temperature Glass Passivated Junction; Ultrafast 75 Nanosecond Recovery Time; Low Leakage Current; Marking: U880E, U8100E; Reverse Voltage to 1000 Volts Mechanical Characteristics:; Excellent Protection Against Voltage Transients in Switching Inductive Load Circuits; Low Forward Voltage; Lead Temperature for Soldering Purposes: 260°C Max

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