Diode

Diode components are essential building blocks in modern electronic systems. FindMyChip sources Diode ICs from authorized China distributors with competitive pricing and reliable stock.

2,158 components

How to Choose Diode Components

  • 1Verify electrical specifications (voltage, current, frequency) match your design requirements.
  • 2Check package footprint and thermal characteristics against your PCB layout constraints.
  • 3Confirm lifecycle status and long-term availability for production designs.

Popular Applications

Consumer Electronics

Smartphones, tablets, and smart home devices

Industrial Systems

Factory automation, control systems, and monitoring

Automotive

In-vehicle electronics and advanced driver assistance

Telecommunications

Base stations, routers, and network equipment

All Diode Components

Showing 1,0511,100 of 2,158

SE10FD-M3/HVishay

Use the download button to access the SE10FD-M3/H schematic symbol, PCB footprint, and 3D model.

10A04-TDiodes Inc.

ROHS COMPLIANT, PLASTIC, R-6, 2 PIN

10A07-TDiodes Inc.

ROHS COMPLIANT, PLASTIC, R-6, 2 PIN

TLV431BSN1T1GON Semiconductor

A = 1.0% tolerance Vref; B = 0.5% tolerance Vref; C = 0.2% tolerance Vref; Programmable Output Voltage Range of 1.24 V to 16 V; Voltage Reference Tolerance +/-1.0%; Sharp Low Current Turn-On Characteristic; Low Dynamic Output Impedance of 0.20 W from 100 mA to 20 mA; Micro Miniature TSOP-5 and TO-92 Packages; Pb-Free Package is Available

SZSMF24AT1GON Semiconductor

SZSMF24AT1G from ON Semiconductor is a diode. Key specs include Breakdown Voltage-Max: 29.5 V, Breakdown Voltage-Min: 26.7 V, Breakdown Voltage-Nom: 28.1 V. From inquiry pricing, buyers can request stock with worldwide shipping.

SZNUP2105LT3GON Semiconductor

Low Capacitance High-Speed CAN Data Rates; SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable; SOT-23 pacakage allows two separate bi-directional configurations; 350 W Peak Power Dissipation per line (8x20 us waveform); Low reverse leakage current (< 100 nA); IEC-61000-4-2: Level 4 Compatible.; IEC-61000-4-4: 5/50 ns 50 A Max.; IEC-61000-4-5: 8.0 A (8x20 us); ISO 7637−2 Pulse 2a: Repetitive Load Switch Disconnect, 9.5 A;

SZBZX84C3V0LT1GON Semiconductor

250 mW Rating on FR-4 or FR-5 Board; Zener Breakdown Voltage Range - 2.4 V to 75 V; Package Designed for Optimal Automated Board Assembly; Small Package Size for High Density Applications; ESD Rating of Class 3 (>16 KV) per Human Body Model; Mechanical Characteristics:; CASE: Void-free, transfer-molded, thermosetting plastic case; FINISH: Corrosion resistant finish, easily solderable; MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260°C for 10 Seconds; POLARITY: Cathode indicated by polarity band; FLAMMAB

SZ1SMB36AT3GON Semiconductor

SZ1SMB36AT3G from ON Semiconductor is a diode. Key specs include 403A-03, Breakdown Voltage-Max: 44.2 V, Breakdown Voltage-Min: 40 V. From inquiry pricing, buyers can request stock with worldwide shipping.

SZ1SMA5929BT3GON Semiconductor

Ideal Replacement for MELF Packages Mechanical Characteristics:; Case: Void-free, transfer-molded plastic; Finish: All external surfaces are corrosion resistant with readily solderable leads; Maximum Case Temperature for Soldering Purposes: 260 °C for 10 seconds; POLARITY: Cathode indicated by molded polarity notch or cathode band.; FLAMMABILITY RATING: UL94 V–0; Pb-Free Packages are Available; AEC-Q101 Qualified and PPAP Capable; SZ Prefix for Automotive and Other Applications Requiring Unique Site and Con

SMMBD914LT1GON Semiconductor

These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant; S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

SSRD8620CTT4RGON Semiconductor

SSRD8620CTT4RG from ON Semiconductor is a diode. Key specs include Breakdown Voltage-Min: 200 V, 3 pins, -65°C to 175°C. From inquiry pricing, buyers can request stock with worldwide shipping.

SURA8130T3GON Semiconductor

SURA8130T3G from ON Semiconductor is a diode. Key specs include Breakdown Voltage-Min: 300 V, Forward Voltage-Max (VF): 1.1 V, 2 pins. From inquiry pricing, buyers can request stock with worldwide shipping.

SS26T3GON Semiconductor

Compact Package with J–Bend Leads Ideal for Automated Handling; Highly Stable Oxide Passivated Junction; Guardring for Over–Voltage Protection; Low Forward Voltage Drop Mechanical Characteristics:; Case: Molded Epoxy; Epoxy Meets UL94, VO at 1/8 inch; Weight: 95 mg (approximately); Cathode Polarity Band; Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds; Available in 12 mm Tape, 2500 Units per 13 inch Reel, Add "T3" Suffix to Part Number; Finish: All External Surfaces C

SMS24T1GON Semiconductor

Pb-Free Packages are Available; SC-74 Package Allows Four Separate Unidirectional Configurations; Peak Power – 350 Watts, 8 x 20 µS; ESD Rating of Class N (Exceeding 25 kV) per the Human Body Model; ESD Rating: IEC 61000–4–2 (ESD) 15 kV (air) 8 kV (contact) IEC 61000–4–4 (EFT) 40 Amps (5/50 ns) IEC 61000–4–5 (lighting) 23 Amps (8/20 µ s); UL Flammability Rating of 94V–0

SS16T3GON Semiconductor

Small Compact Surface Mountable Package with J–Bent Leads; Rectangular Package for Automated Handling; Highly Stable Oxide Passivated Junction; Very Low Forward Voltage Drop; Guardring for Stress Protection Mechanical Characteristics:; Case: Epoxy, Molded; Weight: 70 mg (approximately); Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds; Shipped in 12 mm tape, 5000 units per 13 i

SS24T3GON Semiconductor

Compact Package with J-Bend Leads Ideal for Automated Handling; Highly Stable Oxide Passivated Junction; Guardring for Over-Voltage Protection; Low Forward Voltage Drop Mechanical Characteristics:; Case: Molded Epoxy; Epoxy Meets UL94, VO at 1/8''; Weight: 95 mg (approximately); Cathode Polarity Band; Lead and Mounting Surface Temperature for Soldering Purposes: 260?C Max. for 10 Seconds; Available in 12 mm Tape, 2500 Units per 13'' Reel, Add ''T3'' Suffix to Part Number; Finish: All External Surfaces Corro

SMMBD701LT1GON Semiconductor

High Reverse Voltage - to 70 Volts; Low Reverse Leakage - 200 nA (Max); Very Low Capacitance - 1.0 pF @ VR = 20 V; Extremely Low Minority Carrier Lifetime - 15 ps (Typ); Pb-Free Packages are Available; S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC Qualified and PPAP Capable

SMF6.5AT1GON Semiconductor

200 W Transient Voltage Suppressor SOD-123 Flat Lead Package

SMF5.0AT1GON Semiconductor

ROHS COMPLIANT, PLASTIC, CASE 498, 2 PIN

SMF8.0AT1GON Semiconductor

200 W Transient Voltage Suppressor SOD-123 Flat Lead Package

SMF30AT1GON Semiconductor

ROHS COMPLIANT, PLASTIC, CASE 498, 2 PIN

SMF15AT1GON Semiconductor

ROHS COMPLIANT, PLASTIC, CASE 498, 2 PIN

SMF22AT1GON Semiconductor

200 W Transient Voltage Suppressor SOD-123 Flat Lead Package

SMF33AT1GON Semiconductor

200 W Transient Voltage Suppressor SOD-123 Flat Lead Package

SMF26AT1GON Semiconductor

ROHS COMPLIANT, PLASTIC, CASE 498, 2 PIN

SMF18AT1GON Semiconductor

ROHS COMPLIANT, PLASTIC, CASE 498, 2 PIN

SMF14AT1GON Semiconductor

ROHS COMPLIANT, PLASTIC, CASE 498, 2 PIN

SM15T1GON Semiconductor

SOT23 Package Allows Either Two Separate UnidirectionalConfigurations or a Single Bidirectional Configuration; Working Peak Reverse Voltage Range 5.0 V to 12 V; Peak Power 300 Watt (8 X 20 us); Low Leakage; Flammability Rating UL 94 V0; Pb-Free Packages are Available; AEC-Q101 Qualified and PPAP Capable; SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements

SMF05T1GON Semiconductor

SC-88A Package Allows Four Separate Unidirectional Configurations; Low Leakage < 5 uA at 5 V; Breakdown Voltage: 6.1 V to 7.2 V at 1 mA; Low Capacitance (90 pF TYP); Provides Protection for IEC61000-4-2; Pb-Free Packages Available

SM05T1GON Semiconductor

SOT–23 Package Allows Either Two Separate Unidirectional Configurations or a Single Bidirectional Configuration; Working Peak Reverse Voltage 5 V; Standard Zener Breakdown Voltage Range 6.2 V to 7.3 V; Peak Power – 300 Watt (8 X 20 µs); Low Leakage; Flammability Rating UL 94V–O; Mechanical Characteristics: CASE: Void-free, transfer-molded, thermosetting plastic case FINISH: Corrosion resistant finish, easily solderable MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260 ?C for 10 Seconds Package designed f

SM24T1GON Semiconductor

Peak Power 300 Watt (8/20 us); SZ Prefix for AEC-Q101 and Other Applications Requiring Unique Site and Control Change (PPAP) Requirements; SOT23 Package Allows Either Two Separate UnidirectionalConfigurations or a Single Bidirectional Configuration; Working Peak Reverse Voltage Range 5.0 V to 12 V; Low Leakage; Pb-Free Packages are Available

SMF05CT2GON Semiconductor

Protects up to 5 Lines in a Single SC-88 Package; Peak Power Dissipation - 100W (8x20 µ Waveform); ESD Rating of Class 3B (Exceeding 8 kV) per Human Body Model and Class C (Exceeding 400 V) per Machine Model; Compliance with IEC 61000-4-2 (ESD) 15 kV (Air), 8 kV (Contact); UL Flammability Rating of 94V-0; AEC-Q101 Qualified and PPAP Capable; SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements

SBS811-TL-EON Semiconductor

Dual SMT Schottky Diode, Isolated, 30V 2A, 20ns, 8-pin VEC8

SM36T1GON Semiconductor

SOT23 Package Allows Either Two Separate UnidirectionalConfigurations or a Single Bidirectional Configuration; Working Peak Reverse Voltage Range 5.0 V to 12 V; Peak Power 300 Watt (8 X 20 us); Low Leakage; Flammability Rating UL 94 V0; Pb-Free Packages are Available; AEC-Q101 Qualified and PPAP Capable; SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements

SMF05CT1GON Semiconductor

Protects up to 5 Lines in a Single SC-88 Package; Peak Power Dissipation - 100W (8x20 µ Waveform); ESD Rating of Class 3B (Exceeding 8 kV) per Human Body Model and Class C (Exceeding 400 V) per Machine Model; Compliance with IEC 61000-4-2 (ESD) 15 kV (Air), 8 kV (Contact); UL Flammability Rating of 94V-0; AEC-Q101 Qualified and PPAP Capable; SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements

SL24T1GON Semiconductor

TVS Diode in Series with a Compensating Diode Offers < 5 pF Capacitance; ESD Protection Meeting IEC 61000–4–2, 4–4, 4–5; Peak Power Rating of 300 Watts, 8 x 20 µ s; Bi–Direction Protection Can Be Achieved By Using Two Devices; Flammability Rating UL 94V–0; Mechanical Characteristics:; CASE: Void-free, transfer-molded, thermosetting plastic case; FINISH: Corrosion resistant finish, easily solderable; MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260°C for 10 Seconds; Package designed for optimal automated

SD12T1GON Semiconductor

Steady State Power Routing of 200mW; Peak Power: 350 Watts (8 x 20 us); Low Leakage; Cathode Indicated by Polarity Band; Package Weight: 4.507 mg; Meets IEC61000-4-2 Level 4, 15 kV (Air), 8 kV (Contact); Meets IEC61000-4-4 Level 4, 40A; Meets 16kV Human Body Model ESD Requirements; Device Meets MSL1 Requirements; Meets IEC6100-4-5, Lightning, 24A

SBE808-TL-EON Semiconductor

Dual SMT Schottky Diode, Isolated, 15V 1A, 10ns, 5-pin MCPH

SD05T1GON Semiconductor

Steady State Power Routing of 200mW; Peak Power: 350 Watts (8 x 20 us); Low Leakage; Cathode Indicated by Polarity Band; Package Weight: 4.507 mg; Meets IEC61000-4-2 Level 4, 15 kV (Air), 8 kV (Contact); Meets IEC61000-4-4 Level 4, 40A; Meets 16kV Human Body Model ESD Requirements; Device Meets MSL1 Requirements; Meets IEC6100-4-5, Lightning, 24A

SB05W05C-TB-EON Semiconductor

Low forward voltage (VF max=0.55V); Fast reverse recovery time (trr max=10ns); Low switching noise; Low leakage current and high reliability due to highly reliable planar structure; Small-sized package, permitting applied sets to be compact and slim

SBAW56LT1GON Semiconductor

Use the download button to access the SBAW56LT1G schematic symbol, PCB footprint, and 3D model.

SBAT54SLT1GON Semiconductor

Extremely Fast Switching Speed; Low Forward Voltage 0.35 Volts (Typ) @ IF = 10 mAdc; These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant; S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable

SBAV99WT1GON Semiconductor

SC-70, 3 PIN

SBAV99LT1GON Semiconductor

HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN

SBAV99RWT1GON Semiconductor

SC-70, 3 PIN

SBAV199LT1GON Semiconductor

Medium Speed Switching Times; Low Leakage Current Applications; Available in 8 mm Tape and Reel - Use BAV199LT1 to order the 7 inch/3,000 unit reel; Pb-Free Package is Available; S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable

SBAT54ALT1GON Semiconductor

Extremely Fast Switching Speed; Low Forward Voltage 0.35 Volts (Typ) @ IF = 10 mAdc; Pb-Free Packages are Available; S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC Qualified and PPAP Capable

SBAS16LT1GON Semiconductor

Use the download button to access the SBAS16LT1G schematic symbol, PCB footprint, and 3D model.

SB01-05Q-TL-EON Semiconductor

Low forward voltage (VF max=0.55V); Fast reverse recovery time (trr max=10ns); Low switching noise; Low leakage current and high reliability due to highly reliable planar structure; Small-sized package, permitting SB01-05Q-applied sets to be compact and slim

SBAS40-04LT1GON Semiconductor

Extremely Fast Switching Speed; Low Forward Voltage, VF = 500 mV (Typ) @ IF = 10 mA; S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC Qualified and PPAP Capable; These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant

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