ON Semiconductor

Electrically Similar to the Popular MJE15030 and MJE15031; No Isolating Washers Required; Reduced System Cost; High Current Gain-Bandwidth Product fT = 30 MHz (Min) @ IC = 500 mAdc; 8 A Rated Collector Current; UL Recognized, File #E69369, to 3500 VRMS Isolation; 150 VCEO(sus); Pb-Free Packages are Available

PNP Complements to the TIP47 thru TIP50 Series; 300 V to 400 V (Min) - VCEO(sus); Popular TO-220 Plastic Package; 1.0 A Rated Collector Current; Pb-Free Packages are Available

These Devices are PbFree and are RoHS Compliant; Complementary to MJE5740

DC Current Gain Specified to 4.0 Amperes hFE = 40 (Min) @ IC = 3.0 Adc hFE = 20 (Min) @ IC = 4.0 Adc; TO-220AB Compact Package; Collector-Emitter Sustaining Voltage - VCEO(sus) = 120 Vdc (Min) MJE15028, MJE15029 VCEO(sus) = 150 Vdc (Min) - MJE15030, MJE15031; High Current Gain - Bandwidth Product fT = 30 MHz (Min) @ IC = 500 mAdc; Pb-Free Packages are Available

Two Package Choices: Standard TO-220 or isolated TO-220; Motorola "6 SIGMA" Philosophy Provides Tight and Reproducible Parametric Distributions; Full Characterization at 125°C; Improved Efficiency Due to Low Base Drive Requirements: - High and Flat DC Current Gain h FE - Fast Switching - No Coil Required in Base Circuit for Turn-Off (No Current Tail); MJF18004, Case 221D, is UL Registered at 3500 VRMS: File #E69369; Pb-Free Packages are Available

Low Collector-Emitter Saturation Voltage--VCE(sat) = 1.0 V (Max) @ 8.0 A; Fast Switching Speeds; Complementary Pairs Simplifies Designs; Pb-Free Packages are Available

High Collector-Emitter Sustaining Voltage - VCEO(sus) = 300 Vdc @ IC = 1.0 mAdc; Excellent DC Current Gain - hFE = 30-240 @ IC = 50 mAdc; Pb-Free Package is Available

Annular Construction for Low Leakages - ICBO = 100 nA (Max) @ Rated VCB; DC Current Gain - hFE = 30 (Min) @ IC = 0.5 Adc hFE = 12 (Min) @ IC = 1.5 Adc; Current-Gain - Bandwidth Product - fT = 50 MHz (Min) @ IC = 100 mAdc; Collector-Emitter Sustaining Voltage - VCEO(sus) = 60 Vdc - MJE171, MJE181 VCEO(sus) = 80 Vdc - MJE172, MJE182; Pb-Free Packages are Available

DC Current Gain Specified to 4.0 Amperes hFE = 40 (Min) @ IC = 3.0 Adc hFE = 20 (Min) @ IC = 4.0 Adc; TO-220AB Compact Package; Collector-Emitter Sustaining Voltage - VCEO(sus) = 120 Vdc (Min) MJE15028, MJE15029 VCEO(sus) = 150 Vdc (Min) - MJE15030, MJE15031; High Current Gain - Bandwidth Product fT = 30 MHz (Min) @ IC = 500 mAdc; Pb-Free Packages are Available

High Current Gain Bandwidth Product - fT = 40 MHz (Min) @ IC = 100 mAdc; Low Collector-Emitter Saturation Voltage - VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc; High DC Current Gain @ IC = 200 mAdc hFE = 40-200 hFE = 40-120 - MJE243, MJE253; Annular Construction for Low Leakages ICBO = 100 nAdc (Max) @ Rated VCB; High Collector-Emitter Sustaining Voltage - VCEO(sus) = 100 Vdc (Min) MJE243, MJE253; Pb-Free Packages are Available

Pb-Free Packages are Available

Electrically Similar to Popular TIP47, and TIP50; Lead Formed Version in 16 mm Tape and Reel ("T4" Suffix); Straight Lead Version in Plastic Sleeves ("-1" Suffix); Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix); 250 and 400 V (Min) VCEO(sus); 1 A Rated Collector Current; NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable; These Devices are Pb-Free and are RoHS Compliant

Two Package Choices: Standard TO-220 or Isolated TO-220; Improved Efficiency Due to Low Base Drive Requirements: - High and Flat DC Current Gain hFE - Fast Switching - No Coil Required in Base Circuit for Turn-Off (No Current Tail); Tight Parametric Distributions are Consistent Lot-to-Lot; MJF18008, Case 221D, is UL Recognized at 3500 VRMS: File #E69369; Pb-Free Packages are Available

Annular Construction for Low Leakages - ICBO = 100 nA (Max) @ Rated VCB; DC Current Gain - hFE = 30 (Min) @ IC = 0.5 Adc hFE = 12 (Min) @ IC = 1.5 Adc; Current-Gain - Bandwidth Product - fT = 50 MHz (Min) @ IC = 100 mAdc; Collector-Emitter Sustaining Voltage - VCEO(sus) = 60 Vdc - MJE171, MJE181 VCEO(sus) = 80 Vdc - MJE172, MJE182; Pb-Free Packages are Available

VCEO(sus) 400 V; MJF13007 is UL Recognized to 3500 VRMS, File #E69369; SOA and Switching Applications Information; 700 V Blocking Capability; Two Package Choices: Standard TO-220 or Isolated TO-220; Reverse Bias SOA with Inductive Loads @ TC = 100°C; Pb-Free Package is Available

Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix); Lead Formed Version in 16 mm Tape and Reel ("T4G" Suffix); Electrically Similar to Popular TIP31 and TIP32 Series; NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable; These Devices are Pb−Free and are RoHS Compliant

Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix); Lead Formed Version in 16 mm Tape and Reel ("T4G" Suffix); Electrically Similar to Popular TIP31 and TIP32 Series; NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable; These Devices are Pb−Free and are RoHS Compliant

Complementary Pairs Simplifies Designs; Low Collector Emitter Saturation Voltage VCE(sat) = 1.0 Volt Max @ 8.0 Amperes; Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix); Straight Lead Version in Plastic Sleeves ("-1" Suffix); Lead Formed Version in 16 mm Tape and Reel for Surface Mount ("T4" Suffix); Electrically Similar to Popular D44H/D45H Series; Fast Switching Speeds; NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101

Straight Lead Version in Plastic Sleeves ("-1" Suffix); Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix); High DC Current Gain hFE = 2,500 (Typ) @ IC = 4.0 Adc; Surface Mount Replacements for 2N6040-2N6045 Series, TIP120-TIP122 Series, and TIP125-TIP127 Series; Monolithic Construction With Built-in Base-Emitter Shunt Resistors; Lead Formed Version Available in 16 mm Tape and Reel ("T4" Suffix); Complementary Pairs Simplifies Designs; NJV Prefix for Automotive and Other Applications

Complementary Pairs Simplifies Designs; Low Collector Emitter Saturation Voltage VCE(sat) = 1.0 Volt Max @ 8.0 Amperes; Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix); Straight Lead Version in Plastic Sleeves ("-1" Suffix); Lead Formed Version in 16 mm Tape and Reel for Surface Mount ("T4" Suffix); Electrically Similar to Popular D44H/D45H Series; Fast Switching Speeds; NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101

Annular Construction for Low Leakage - ICBO = 100 nAdc @ Rated VCB; Straight Lead Version in Plastic Sleeves ("-1" Suffix); Lead Formed Version in 16 mm Tape and Reel ("T4" Suffix); High Current-Gain - Bandwidth Product - fT = 65 MHz (Min) @ IC = 100 mAdc; Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix); Collector-Emitter Sustaining Voltage - VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc; Low Collector-Emitter Saturation Voltage - VCE(sat) = 0.3 Vdc (Max) @ I C = 500 mAdc = 0.75 Vdc (Max

Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix); Lead Formed Version in 16 mm Tape and Reel ("T4G" Suffix); Electrically Similar to Popular TIP31 and TIP32 Series; NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable; These Devices are Pb−Free and are RoHS Compliant

Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix); Straight Lead Version in Plastic Sleeves ("1G"Suffix); Lead Formed Version in 16 mm Tape and Reel ("T4G" Suffix); Electrically Similar to Popular TIP31 and TIP32 Series; NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable; These Devices are Pb−Free and are RoHS Compliant

Use the download button to access the MJD44H11T4G schematic symbol, PCB footprint, and 3D model.

MJD200 is the complementary NPN device; High Current-Gain - Bandwidth Product - fT = 65 MHz (Min) @ IC = 100 mAdc; Annular Construction for Low Leakage - ICBO = 100 nAdc @ Rated VCB; These Devices are Pb-Free and are RoHS Compliant; Low Collector-Emitter Saturation Voltage - VCE(sat) = 0.30 Vdc (Max) @ IC = 500 mAdc = 0.75 Vdc (Max) @ IC = 2.0 Adc; Collector-Emitter Sustaining Voltage - VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc; NJV Prefix for Automotive and Other Applications Requiring Unique Site and Contro

Bipolar (BJT) Transistor NPN 300 V 500 mA 10MHz 15 W Surface Mount DPAK , -65°C ~ 150°C (TJ)

Use the download button to access the MJD127T4G schematic symbol, PCB footprint, and 3D model.

Use the download button to access the MJD122T4G schematic symbol, PCB footprint, and 3D model.

Bipolar (BJT) Transistor NPN 100 V 3 A 3MHz 1.56 W Surface Mount DPAK

Use the download button to access the MJD3055T4G schematic symbol, PCB footprint, and 3D model.

Straight Lead Version in Plastic Sleeves ("-1" Suffix); Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix); High DC Current Gain hFE = 2500 (Typ) @ IC = 4.0 Adc; Surface Mount Replacements for 2N6040-2N6045 Series, TIP120-TIP122 Series, and TIP125-TIP127 Series; Monolithic Construction With Built-in Base-Emitter Shunt Resistors; Lead Formed Version Available in 16 mm Tape and Reel ("T4" Suffix); Complementary Pairs Simplifies Designs; NJV Prefix for Automotive and Other Applications R

High Current-Gain-Bandwith Product - fT = 40MHz (Min) @ IC = 100 mAdc; Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix); Collector-Emitter Sustaining Voltage VCEO(sus) = 100 Vdc (Min) @ IC = 10 mAdc; Low Collector-Emitter Saturation Voltage - VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Adc; Lead Formed Version in 16 mm Tape and Reel ("T4" Suffix); Straight Lead Version in Plastic Sleeves ("-1" Suffix); High DC Current Gain hFE = 40 (Min) @ IC= 200 mA

Lead Formed Version in 16 mm Tape and Reel ("T4" Suffix); High DC Current Gain hFE = 2500 (Typ) @ IC = 2.0 Adc; Monolithic Construction With Built-in Base-Emitter Shunt Resistors; Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix); Straight Lead Version in Plastic Sleeves ("1" Suffix); Surface Mount Replacements for TIP110-TIP117 Series; Complementary Pairs Simplifies Designs; NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q

Lead Formed Version in 16 mm Tape and Reel ("T4" Suffix); High DC Current Gain hFE = 2,500 (Typ) @ IC = 2.0 Adc; Monolithic Construction With Built-in Base-Emitter Shunt Resistors; Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix); Straight Lead Version in Plastic Sleeves ("1" Suffix); Surface Mount Replacements for TIP110-TIP117 Series; Complementary Pairs Simplifies Designs; NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-

Lead Formed Version in 16 mm Tape and Reel ("T4" Suffix); High DC Current Gain hFE = 2,500 (Typ) @ IC = 2.0 Adc; Monolithic Construction With Built-in Base-Emitter Shunt Resistors; Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix); Straight Lead Version in Plastic Sleeves ("1" Suffix); Surface Mount Replacements for TIP110-TIP117 Series; Complementary Pairs Simplifies Designs; NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-

Use the download button to access the MGSF1N03LT1G schematic symbol, PCB footprint, and 3D model.

TO-236, 3 PIN

Lead Formed Version in 16 mm Tape and Reel ("T4" Suffix); High DC Current Gain hFE = 2,500 (Typ) @ IC = 2.0 Adc; Monolithic Construction With Built-in Base-Emitter Shunt Resistors; Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix); Straight Lead Version in Plastic Sleeves ("1" Suffix); Surface Mount Replacements for TIP110-TIP117 Series; Complementary Pairs Simplifies Designs; NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-

SCR; TO-220AB; 80A ITSM; 8A; 2.2; 7 MA (TYP.) GATE TRIGGER; +125; -40; +125

Use the download button to access the MJB5742T4G schematic symbol, PCB footprint, and 3D model.

SCR; TO-220AB; 6 V (TYP.); 300A ITSM; 16A ON-STATE (AVG. MAX.); 25A; 1.5; +125

TO-3, 2 PIN

THYRISTOR, SCR 12A 50V TO220AB

0.8 A, 200 V, SCR, TO-261AA, LEAD FREE

SCR; TO-220AB; 2V; 100A ITSM; 8A; 22; 30 UA (TYP.) GATE TRIGGER; +110; -40; 60

SOT-23, 3 PIN

LDO Regulator, 500 mA, 5 V, Negative 4%; TJ = -40°C to +125°C

Obsolete - Single P-Channel Power MOSFET, -12V, -5A, 43mΩ

Last Shipments - Dual N-Channel Power MOSFET 20V, 2A, 160mΩ