ON Semiconductor

ON Semiconductor

ON Semiconductor (onsemi) provides intelligent power and sensing technologies for automotive, industrial, IoT, and cloud infrastructure applications.

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All ON Semiconductor Components

Showing 801850 of 4,313

EMI7204MUTAGSmall Outline No-lead
EMI7204MUTAGIntegrated Circuit

±16 kV ESD Protection on Each Channel (IEC6100042 Level 4, Contact Discharge); L/C Values of 17 nH and 12 pF Deliver Exceptional S21 Performance Characteristics of 250 MHz f3dB and -23 dB Stop Band Attenuation from 800 MHz to 6.0 GHz ; Integrated EMI/ESD System Solution in UDFN Package Offers Exceptional Cost, System Reliability and Space Savings; These are PbFree Devices

EMG2DXV5T5GSOT23 (5-Pin)
EMG2DXV5T5GTransistor BJT NPN

Simplifies Circuit Design; Reduces Board Space; Reduces Component Count

ECH8660-TL-HSO Transistor Flat Lead
ECH8660-TL-HMOSFET (N-Channel)

Use the download button to access the ECH8660-TL-H schematic symbol, PCB footprint, and 3D model.

ECH8315-TL-HSO Transistor Flat Lead
ECH8315-TL-HMOSFET (P-Channel)

SOT-28FL, 8 PIN

ECH8310-TL-HSO Transistor Flat Lead
ECH8310-TL-HMOSFET (P-Channel)

SOT-28FL, 8 PIN

DAN222GSOT23 (3-Pin)
DAN222GDiode

CASE 463-01, SC-75, 3 PIN

CS5173EDR8GSmall Outline Packages
CS5173EDR8GIntegrated Circuit

SOIC-8

CPH6445-TL-ESOT23 (6-Pin)
CPH6445-TL-EMOSFET (N-Channel)

SC-74, SOT-26, SOT-457, 6 PIN

CPH3448-TL-HSOT23 (3-Pin)
CPH3448-TL-HMOSFET (N-Channel)

ON Semiconductor CPH3448-TL-H N-channel MOSFET Transistor, 4 A, 30 V, 3-Pin CPH

CPH3245-TL-ESOT23 (3-Pin)
CPH3245-TL-ETransistor BJT NPN

Use the download button to access the CPH3245-TL-E schematic symbol, PCB footprint, and 3D model.

CPH3216-TL-ESOT23 (3-Pin)
CPH3216-TL-ETransistor BJT NPN

Adoption of MBIT processes; Large current capacity; Low collector-to-emitter saturation voltage; High-speed switching; Ultrasmall package facilitates miniaturization in end products (mounting height : 0.9mm); High allowable power dissipation

CM1293A-02SROther
CM1293A-02SRTVS Diode (Uni-directional)

Two and four channels of ESD protection up to ±8kV contact discharge; Low loading capacitance of 2.0pF max.; Channel I/O to I/O capacitance 1.5pF typical; Zener diode protects supply rail and eliminates the need for external by-pass capacitors

CM1231-02SOSOT23 (6-Pin)
CM1231-02SOTVS Diode (Uni-directional)

SOT-23, 6 PIN

CM1216-08MRSmall Outline Packages
CM1216-08MRIntegrated Circuit

MSOP-10

CM1213A-01SOSOT23 (3-Pin)
CM1213A-01SODiode

SOT-23, 3 PIN

CM1213-06MRSmall Outline Packages
CM1213-06MRIntegrated Circuit

6 or 8 channels of ESD protection; Channel input capacitance matching of 0.02pF typical is ideal for differential signals; Available in SOIC and MSOP, lead-free packaging

CAX803TTBI-T3SOT23 (3-Pin)
CAX803TTBI-T3Integrated Circuit

ON Semiconductor CAX803TTBI-T3, Voltage Supervisor, 2.5 → 5 V, 3-Pin SOT-23

CAT93C56VI-GOther
CAT93C56VI-GIntegrated Circuit

Use the download button to access the CAT93C56VI-G schematic symbol, PCB footprint, and 3D model.

CAT93C46WI-GT3Small Outline Packages
CAT93C46WI-GT3Integrated Circuit

0.150 INCH, HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8

CAT8900C250TBGT3SOT23 (3-Pin)
CAT8900C250TBGT3Integrated Circuit

Obsolete - Precision Analog Voltage Reference

CAT811LTBI-GT3Other
CAT811LTBI-GT3Integrated Circuit

Precision monitoring of +5.0 V (±5%, ±10%, ±20%), +3.3 V (±5%, ±10%), +3.0 V (±10%) and +2.5 V (±5%) power supplies; Offered in two output configurations: - CAT811: Active LOW reset - CAT812: Active HIGH reset; Manual reset input; Direct replacements for the MAX811 and MAX812 in applications operating over the industrial temperature range; Reset valid down to VCC = 1.0 V; 6 µA power supply current; Power supply transient immunity; Industrial temperature range: -40°C to +85°C; Compact 4-pin SOT143 package

CAT6243-ADJMT5T3Small Outline No-lead
CAT6243-ADJMT5T3Integrated Circuit

WDFN-6

CAT6202VP2-GT3Small Outline No-lead
CAT6202VP2-GT3Integrated Circuit

Obsolete - 150 mA LDO Regulator

CAT4137TD-GT3SOT23 (5-Pin)
CAT4137TD-GT3Power Supply

SOT-23, 5 PIN

CAT4002ASD-GT3SOT23 (6-Pin)
CAT4002ASD-GT3Integrated Circuit

Low Dropout Driver 50 mV at 20 mA; No Switching Noise; Shutdown Current less than 1 µA; LED Current set by External Resistor; Dimming via 1-wire EZDim Interface; Thermal Shutdown Protection; 2 LED Current Sinks with Tight Matching; 32 Dimming Levels

CAT3604VHV4-GT2Quad Flat No-Lead
CAT3604VHV4-GT2Integrated Circuit

TQFN-16

CAT25640VI-GT3Small Outline Packages
CAT25640VI-GT3Integrated Circuit

20 MHz (5 V) SPI Compatible; 1.8 V to 5.5 V Supply Voltage Range; SPI Modes (0,0) & (1,1); 64-byte Page Write Buffer; Self-timed Write Cycle; Hardware and Software Protection; Block Write Protection - Protect 1/4, 1/2 or Entire EEPROM Array; Industrial Temperature Range; 100 Year Data Retention; 1,000,000 Program/Erase Cycles; Low Power CMOS Technology; SOIC, TSSOP 8-lead and UDFN 8-pad Packages; This Device is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant

CAT25320VI-GT3Small Outline Packages
CAT25320VI-GT3Integrated Circuit

10 MHz SPI compatible; 1.8 V to 5.5 V supply voltage range; SPI modes (0,0) & (1,1); 32-Byte page write buffer; Self-timed write cycle; Hardware and software protection; 1,000,000 program/erase cycles; 100 year data retention; Industrial temperature range; Block write protection - Protect 1/4, 1/2 or all of EEPROM array; Low power CMOS technology; RoHS-compliant SOIC, TSSOP 8-lead and UDFN 8-pad packages

CAT25256XI-T2Small Outline Packages
CAT25256XI-T2Integrated Circuit

20 MHz (5 V) SPI Compatible; 1.8 V to 5.5 V Supply Voltage Range; SPI Modes (0,0) & (1,1); 64-byte Page Write Buffer; Additional Identification Page with Permanent Write Protection (New Product); Self-timed Write Cycle; Hardware and Software Protection; Block Write Protection - Protect 1/4, 1/2 or Entire EEPROM Array; Low Power CMOS Technology; 1,000,000 Program/Erase Cycles; 100 Year Data Retention; Industrial Temperature Range; 8-lead SOIC, TSSOP and 8-pad UDFN Packages; This Device is Pb-Free, Halogen Fr

CAT25256XIOther
CAT25256XIIntegrated Circuit

ON Semiconductor CAT25256XI EEPROM Memory, 256kbit, 40ns, 1.8 → 5.5 V 8-Pin SOIC

CAT25160YI-GT3Small Outline Packages
CAT25160YI-GT3Integrated Circuit

32-byte page write buffer; SPI modes (0,0 & 1,1); 1.8 V to 5.5 V supply voltage range; 10 MHz SPI compatible; Self-timed write cycle; Hardware and software protection; Block write protection - Protect 1/4, 1/2 or all of EEPROM array; Low power CMOS technology; RoHS-compliant 8 lead SOIC, TSSOP and 8-pad UDFN packages; Industrial temperature range; 100 year data retention; 1,000,000 program/erase cycles

CAT25128VI-GT3Small Outline Packages
CAT25128VI-GT3Integrated Circuit

20 MHz SPI Compatible; 1.8 V to 5.5 V Operation; Hardware and Software Protection; Low Power CMOS Technology; Industrial Temperature Range; Self-Timed Write Cycle; 64-Byte Page Write Buffer; SPI Modes (0,0 & 1,1); Block Write Protection - Protect 1/4, 1/2 or all of EEPROM Array; 1,000,000 Program/Erase Cycles; 100 Year Data Retention; 8-lead SOIC, TSSOP and 8-pad TDFN, UDFN Packages; This Device is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant; Additional Identification Page with Permanent Write Protec

CAT25080VI-GT3Small Outline Packages
CAT25080VI-GT3Integrated Circuit

32-byte page write buffer; SPI modes (0,0 & 1,1); 1.8 V to 5.5 V supply voltage range; 10 MHz SPI compatible; Self-timed write cycle; Hardware and software protection; Block write protection - Protect 1/4, 1/2 or all of EEPROM array; Low power CMOS technology; RoHS-compliant 8 lead SOIC and TSSOP, UDFN 8-pad packages; Industrial temperature range; 100 year data retention; 1,000,000 program/erase cycles

CAT25020LI-GDual-In-Line Packages
CAT25020LI-GIntegrated Circuit

ON Semiconductor CAT25020LI-G EEPROM Memory, 2kbit, 2μs, 1.8 → 5.5 V 8-Pin PDIP

CAT25010HU4I-GT3Small Outline No-lead
CAT25010HU4I-GT3Integrated Circuit

20 MHz (5 V) SPI Compatible; 1.8 V to 5.5 V Supply Voltage Range; SPI Modes (0,0 and 1,1); 16-byte Page Write Buffer; Self-timed Write Cycle; Hardware and Software Protection; Block Write Protection - Protect 1/4, 1/2 or Entire EEPROM Array; Low Power CMOS Tchnology; 8-lead SOIC and TSSOP and 8-pad UDFN packages; Industrial Temperature Range; 100 year Data Retention; 1,000,000 Program/Erase Cycles; These Devices are Pb-Free, Halogen Free/BFR Free and RoHS Compliant

CAT24C256XI-T2Small Outline Packages
CAT24C256XI-T2Integrated Circuit

ON Semiconductor CAT24C256XI-T2 EEPROM Memory, 256kbit, 1000ns, 1.8 → 5.5 V 8-Pin SOIC

CAT24C16LI-GDual-In-Line Packages
CAT24C16LI-GIntegrated Circuit

DIP-8

BZX84C75LT1GSOT23 (3-Pin)
BZX84C75LT1GZener Diode

250 mW Rating on FR-4 or FR-5 Board; Zener Breakdown Voltage Range - 2.4 V to 75 V; Package Designed for Optimal Automated Board Assembly; Small Package Size for High Density Applications; ESD Rating of Class 3 (>16 KV) per Human Body Model; Mechanical Characteristics:; CASE: Void-free, transfer-molded, thermosetting plastic case; FINISH: Corrosion resistant finish, easily solderable; MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260°C for 10 Seconds; POLARITY: Cathode indicated by polarity band; FLAMMAB

BZX84C68LT1GSOT23 (3-Pin)
BZX84C68LT1GZener Diode

250 mW Rating on FR-4 or FR-5 Board; Zener Breakdown Voltage Range - 2.4 V to 75 V; Package Designed for Optimal Automated Board Assembly; Small Package Size for High Density Applications; ESD Rating of Class 3 (>16 KV) per Human Body Model; Mechanical Characteristics:; CASE: Void-free, transfer-molded, thermosetting plastic case; FINISH: Corrosion resistant finish, easily solderable; MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260°C for 10 Seconds; POLARITY: Cathode indicated by polarity band; FLAMMAB

BZX84C62LT1GSOT23 (3-Pin)
BZX84C62LT1GZener Diode

250 mW Rating on FR-4 or FR-5 Board; Zener Breakdown Voltage Range - 2.4 V to 75 V; Package Designed for Optimal Automated Board Assembly; Small Package Size for High Density Applications; ESD Rating of Class 3 (>16 KV) per Human Body Model; Mechanical Characteristics:; CASE: Void-free, transfer-molded, thermosetting plastic case; FINISH: Corrosion resistant finish, easily solderable; MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260°C for 10 Seconds; POLARITY: Cathode indicated by polarity band; FLAMMAB

BZX84C56LT1GSOT23 (3-Pin)
BZX84C56LT1GZener Diode

250 mW Rating on FR-4 or FR-5 Board; Zener Breakdown Voltage Range - 2.4 V to 75 V; Package Designed for Optimal Automated Board Assembly; Small Package Size for High Density Applications; ESD Rating of Class 3 (>16 KV) per Human Body Model; Mechanical Characteristics:; CASE: Void-free, transfer-molded, thermosetting plastic case; FINISH: Corrosion resistant finish, easily solderable; MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260°C for 10 Seconds; POLARITY: Cathode indicated by polarity band; FLAMMAB

BZX84C51LT1GSOT23 (3-Pin)
BZX84C51LT1GZener Diode

250 mW Rating on FR-4 or FR-5 Board; Zener Breakdown Voltage Range - 2.4 V to 75 V; Package Designed for Optimal Automated Board Assembly; Small Package Size for High Density Applications; ESD Rating of Class 3 (>16 KV) per Human Body Model; Mechanical Characteristics:; CASE: Void-free, transfer-molded, thermosetting plastic case; FINISH: Corrosion resistant finish, easily solderable; MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260°C for 10 Seconds; POLARITY: Cathode indicated by polarity band; FLAMMAB

BZX84C4V3LT1GSOT23 (3-Pin)
BZX84C4V3LT1GZener Diode

250 mW Rating on FR-4 or FR-5 Board; Zener Breakdown Voltage Range - 2.4 V to 75 V; Package Designed for Optimal Automated Board Assembly; Small Package Size for High Density Applications; ESD Rating of Class 3 (>16 KV) per Human Body Model; Mechanical Characteristics:; CASE: Void-free, transfer-molded, thermosetting plastic case; FINISH: Corrosion resistant finish, easily solderable; MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260°C for 10 Seconds; POLARITY: Cathode indicated by polarity band; FLAMMAB

BZX84C47LT1GSOT23 (3-Pin)
BZX84C47LT1GZener Diode

250 mW Rating on FR-4 or FR-5 Board; Zener Breakdown Voltage Range - 2.4 V to 75 V; Package Designed for Optimal Automated Board Assembly; Small Package Size for High Density Applications; ESD Rating of Class 3 (>16 KV) per Human Body Model; Mechanical Characteristics:; CASE: Void-free, transfer-molded, thermosetting plastic case; FINISH: Corrosion resistant finish, easily solderable; MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260°C for 10 Seconds; POLARITY: Cathode indicated by polarity band; FLAMMAB

BZX84C43LT1GSOT23 (3-Pin)
BZX84C43LT1GZener Diode

250 mW Rating on FR-4 or FR-5 Board; Zener Breakdown Voltage Range - 2.4 V to 75 V; Package Designed for Optimal Automated Board Assembly; Small Package Size for High Density Applications; ESD Rating of Class 3 (>16 KV) per Human Body Model; Mechanical Characteristics:; CASE: Void-free, transfer-molded, thermosetting plastic case; FINISH: Corrosion resistant finish, easily solderable; MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260°C for 10 Seconds; POLARITY: Cathode indicated by polarity band; FLAMMAB

BZX84C3V6LT1GSOT23 (3-Pin)
BZX84C3V6LT1GZener Diode

250 mW Rating on FR-4 or FR-5 Board; Zener Breakdown Voltage Range - 2.4 V to 75 V; Package Designed for Optimal Automated Board Assembly; Small Package Size for High Density Applications; ESD Rating of Class 3 (>16 KV) per Human Body Model; Mechanical Characteristics:; CASE: Void-free, transfer-molded, thermosetting plastic case; FINISH: Corrosion resistant finish, easily solderable; MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260°C for 10 Seconds; POLARITY: Cathode indicated by polarity band; FLAMMAB

BZX84C3V0LT1GSOT23 (3-Pin)
BZX84C3V0LT1GZener Diode

250 mW Rating on FR-4 or FR-5 Board; Zener Breakdown Voltage Range - 2.4 V to 75 V; Package Designed for Optimal Automated Board Assembly; Small Package Size for High Density Applications; ESD Rating of Class 3 (>16 KV) per Human Body Model; Mechanical Characteristics:; CASE: Void-free, transfer-molded, thermosetting plastic case; FINISH: Corrosion resistant finish, easily solderable; MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260°C for 10 Seconds; POLARITY: Cathode indicated by polarity band; FLAMMAB

BZX84C30LT1GSOT23 (3-Pin)
BZX84C30LT1GZener Diode

250 mW Rating on FR-4 or FR-5 Board; Zener Breakdown Voltage Range - 2.4 V to 75 V; Package Designed for Optimal Automated Board Assembly; Small Package Size for High Density Applications; ESD Rating of Class 3 (>16 KV) per Human Body Model; Mechanical Characteristics:; CASE: Void-free, transfer-molded, thermosetting plastic case; FINISH: Corrosion resistant finish, easily solderable; MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260°C for 10 Seconds; POLARITY: Cathode indicated by polarity band; FLAMMAB

BZX84C2V7LT1GSOT23 (3-Pin)
BZX84C2V7LT1GZener Diode

250 mW Rating on FR-4 or FR-5 Board; Zener Breakdown Voltage Range - 2.4 V to 75 V; Package Designed for Optimal Automated Board Assembly; Small Package Size for High Density Applications; ESD Rating of Class 3 (>16 KV) per Human Body Model; Mechanical Characteristics:; CASE: Void-free, transfer-molded, thermosetting plastic case; FINISH: Corrosion resistant finish, easily solderable; MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260°C for 10 Seconds; POLARITY: Cathode indicated by polarity band; FLAMMAB

BZX84C2V4LT1GSOT23 (3-Pin)
BZX84C2V4LT1GZener Diode

250 mW Rating on FR-4 or FR-5 Board; Zener Breakdown Voltage Range - 2.4 V to 75 V; Package Designed for Optimal Automated Board Assembly; Small Package Size for High Density Applications; ESD Rating of Class 3 (>16 KV) per Human Body Model; Mechanical Characteristics:; CASE: Void-free, transfer-molded, thermosetting plastic case; FINISH: Corrosion resistant finish, easily solderable; MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260°C for 10 Seconds; POLARITY: Cathode indicated by polarity band; FLAMMAB

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