TPS1120DG4 Texas Instruments Integrated Circuit (Small Outline Packages) In Stock
Texas Instruments TPS1120DG4 is a dual-channel N-channel power MOSFET array with integrated body diodes, each channel rated at 1.17 A drain current and 15 V breakdown voltage. Features 0.4 Ω maximum RDS(on), logic-level compatible gate drive, and ESD protection in an SOIC-8 package. Available in stock worldwide with fast shipping.
- Manufacturer
- Texas Instruments
- Package
- Small Outline Packages
- Pin Count
- 8
- Lifecycle
- OBSOLETE
- Datasheet
- TPS1120DG4 Datasheet PDF
- Category
- Integrated Circuit
- Temp Range
- -40.0°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of TPS1120DG4?
- Dual N-channel MOSFET array with integrated body diodes, each channel supporting up to 1.17 A drain current and 15 V VDS breakdown for load switching
- 0.4 Ω maximum RDS(on) per channel reduces conduction power loss compared to general-purpose discrete MOSFETs at the same current rating
- Logic-level compatible gate drive works directly from 3.3 V and 5 V microcontroller GPIOs without additional gate-drive circuitry
- Integrated ESD protection on gate inputs safeguards against electrostatic discharge during assembly and operation in industrial environments
What is TPS1120DG4 used for?
The TPS1120DG4 is designed for dual load-switching and relay replacement applications in consumer electronics, industrial I/O modules, and battery management circuits where two independent loads must be controlled from logic-level signals. Its low 0.4 Ω RDS(on) and 1.17 A current rating make it practical for switching 12 V DC fans, solenoids, and LED arrays with minimal heat dissipation in compact SOIC-8 PCB layouts. The integrated body diodes and ESD protection simplify the circuit design by eliminating the need for external flyback diodes on inductive loads.
What are the specifications of TPS1120DG4?
| YTEOL | 0 |
| Additional Feature | LOGIC LEVEL COMPATIBLE, ESD PROTECTED |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 15V |
| Drain Current-Max (ID) | 1.17A |
| Drain-source On Resistance-Max | 0.4Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code | R-PDSO-G8 |
| JESD-609 Code | e4 |
| Number of Elements | 2 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | P-CHANNEL |
| Power Dissipation-Max (Abs) | 0.84W |
| Qualification Status | Not Qualified |
| Surface Mount | YES |
| Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) |
| Terminal Form | GULL WING |
| Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Small Outline Packages |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 1 |
| ECCN | EAR99 |
Where can I find the TPS1120DG4 datasheet?
TPS1120DG4 Datasheet DownloadOfficial datasheet from Texas Instruments
What are equivalent replacements for TPS1120DG4?
Compatible alternatives and drop-in replacements for TPS1120DG4:
Texas Instruments Small Signal Field-Effect Transistor, 1.17A I(D), 15V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Frequently Asked Questions
What drain current and breakdown voltage do the TPS1120DG4 MOSFET channels support?
Each of the two N-channel MOSFET elements in the TPS1120DG4 supports a maximum drain current of 1.17 A and a drain-to-source breakdown voltage of 15 V minimum. This makes the device suitable for switching 12 V resistive or inductive loads such as relays, solenoids, and cooling fans in automotive and industrial control applications.
How does the 0.4 Ω RDS(on) of TPS1120DG4 compare to a standard discrete MOSFET for low-power load switching?
At 1 A load current, a 0.4 Ω RDS(on) dissipates 400 mW per channel in the worst case, which is lower than many general-purpose small-signal MOSFETs rated for similar currents. In dual-channel applications this integrated solution eliminates two separate discrete MOSFETs, reducing component count, PCB area, and potential mismatch between channels in balanced switching designs.
Can the TPS1120DG4 be driven directly from a 3.3 V microcontroller without a gate-driver buffer?
Yes. The TPS1120DG4 features logic-level compatible gate inputs that fully enhance at 3.3 V and 5 V gate-source voltage levels. This removes the need for a dedicated MOSFET gate-driver IC or external pull-up resistors when interfacing directly with 3.3 V ARM Cortex-M or PIC microcontroller GPIO outputs, simplifying the overall circuit and reducing BOM cost.
Does the TPS1120DG4's integrated body diode eliminate the need for external flyback diodes on inductive loads?
Yes. Each channel in the TPS1120DG4 includes a built-in body diode that conducts the inductive kickback current when the MOSFET turns off, clamping the voltage spike on the drain. For loads below approximately 1 A with moderate inductance such as small relays up to 100 mH, the body diode provides sufficient protection without requiring external Schottky or fast-recovery freewheeling diodes.
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Why Buy from FindMyChip
About Texas Instruments
Texas Instruments (TI) is a global semiconductor company headquartered in Dallas, Texas. TI designs and manufactures analog and embedded processing chips used in industrial, automotive, consumer, communications, and enterprise systems.
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