TPS1120DR Texas Instruments Integrated Circuit (Small Outline Packages) In Stock
The Texas Instruments TPS1120DR is a dual P-channel enhancement-mode MOSFET with logic-level gate compatibility, 15 V breakdown voltage, 1.17 A drain current, and 0.4 Ω RDS(on) in an 8-pin SOIC surface-mount package. Both channels are independent with integrated ESD protection and built-in body diodes for versatile load switching. Available from $0.80 in stock with worldwide shipping.
- Manufacturer
- Texas Instruments
- Package
- Small Outline Packages
- Pin Count
- 8
- Lifecycle
- ACTIVE
- Datasheet
- TPS1120DR Datasheet PDF
- Category
- Integrated Circuit
- Temp Range
- -40.0°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- Dual P-channel MOSFETs with logic-level compatible gates enable direct drive from 3.3 V or 5 V microcontroller GPIO without external gate resistors
- 0.4 Ω maximum RDS(on) per channel minimizes conduction losses when switching battery or supply rails up to 15 V
- ESD protection and built-in body diodes on both channels provide robust operation in hot-swap and battery management circuits
Applications
The TPS1120DR is used in portable electronics and battery-powered systems for load switching and reverse polarity protection, where low gate drive voltage and compact size are required. Its dual P-channel configuration makes it suitable for multiplexed power paths, USB power delivery switches, and backlight control in handheld devices. It is also employed in power management modules to isolate or sequence multiple supply rails under microcontroller control.
Specifications
| Pbfree Code | Yes |
| YTEOL | 15 |
| Additional Feature | LOGIC LEVEL COMPATIBLE, ESD PROTECTED |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 15V |
| Drain Current-Max (ID) | 1.17A |
| Drain-source On Resistance-Max | 0.4Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | MS-012AA |
| JESD-30 Code | R-PDSO-G8 |
| JESD-609 Code | e4 |
| Number of Elements | 2 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | P-CHANNEL |
| Power Dissipation-Max (Abs) | 0.84W |
| Qualification Status | Not Qualified |
| Surface Mount | YES |
| Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) |
| Terminal Form | GULL WING |
| Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Small Outline Packages |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 1 |
| ECCN | EAR99 |
| HTS Code | 8541.21.00.95 |
| Country of Origin | Taiwan |
Alternate & Equivalent Parts
Compatible alternatives and drop-in replacements for TPS1120DR:
Texas Instruments Small Signal Field-Effect Transistor, 1.17A I(D), 15V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Frequently Asked Questions
What is the drain-source breakdown voltage of the TPS1120DR?
The TPS1120DR has a minimum drain-source breakdown voltage of 15 V, making it suitable for load switching applications powered from single-cell lithium-ion batteries, 5V USB rails, or 12V supply rails commonly found in portable and consumer electronics.
What is the maximum drain current of the TPS1120DR?
Each P-channel MOSFET in the TPS1120DR supports a maximum continuous drain current of 1.17 A, which is adequate for switching loads such as LED arrays, small motors, or peripheral power supplies in battery-operated portable products.
Are the two MOSFETs in the TPS1120DR independent?
Yes, the TPS1120DR contains two electrically separate P-channel MOSFETs in a single 8-pin SOIC package, each with its own gate, drain, and source pins and individual body diodes, allowing them to be used in completely independent switching circuits.
Does the TPS1120DR require a level shifter to drive from a 3.3 V MCU?
No, the TPS1120DR features logic-level compatible gates that can be driven directly from 3.3 V or 5 V microcontroller output pins without any additional level-shifting or gate drive circuitry, simplifying PCB design and reducing component count.
What is the on-resistance of the TPS1120DR?
The maximum RDS(on) for the TPS1120DR is 0.4 Ω per channel at the rated gate drive voltage, resulting in low power dissipation when carrying loads up to 1 A and making it efficient for battery-powered applications where minimizing standby current is important.
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About Texas Instruments
Texas Instruments (TI) is a global semiconductor company headquartered in Dallas, Texas. TI designs and manufactures analog and embedded processing chips used in industrial, automotive, consumer, communications, and enterprise systems.
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