STRH12P10GYTAlternatives & Equivalent Parts

About STRH12P10GYT

STRH12P10GYT is a MOSFET (P-Channel) component manufactured by STMicroelectronics. It comes in a Transistor Outline, Vertical package. Below you'll find known alternative and equivalent parts that can serve as replacements in your design.

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Specification Comparison

ParameterSTRH12P10GYTSourceSTRH12P10GY1STRH12P10GYG
ManufacturerSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Package TypeTransistor Outline, VerticalTransistor Outline, VerticalTransistor Outline, Vertical
Pin Count333
Temperature Range~ 150.0°C~ 150.0°C~ 150.0°C
Price———
StockIn StockIn StockIn Stock
LifecycleACTIVEACTIVEACTIVE
Electrical Parameters
YTEOL5.055.055.05
Avalanche Energy Rating (Eas)112 mJ112 mJ112 mJ
ConfigurationSINGLE WITH BUILT-IN DIODESINGLE WITH BUILT-IN DIODESINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min100 V100 V100 V
Drain Current-Max (ID)12 A12 A12 A
Drain-source On Resistance-Max0.3 Ω0.3 Ω0.3 Ω
FET TechnologyMETAL-OXIDE SEMICONDUCTORMETAL-OXIDE SEMICONDUCTORMETAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)85 pF85 pF85 pF
JEDEC-95 CodeTO-257AATO-257AATO-257AA
JESD-30 CodeR-XSFM-P3R-XSFM-P3R-XSFM-P3
Number of Elements111
Operating ModeENHANCEMENT MODEENHANCEMENT MODEENHANCEMENT MODE
Package Body MaterialUNSPECIFIEDUNSPECIFIEDUNSPECIFIED
Package ShapeRECTANGULARRECTANGULARRECTANGULAR
Package StyleFLANGE MOUNTFLANGE MOUNTFLANGE MOUNT
Peak Reflow Temperature (Cel)NOT SPECIFIEDNOT SPECIFIEDNOT SPECIFIED
Polarity/Channel TypeP-CHANNELP-CHANNELP-CHANNEL
Power Dissipation-Max (Abs)75 W75 W75 W
Pulsed Drain Current-Max (IDM)48 A48 A48 A
Reference StandardEUROPEAN SPACE AGENCY; RH - 100K Rad(Si)—EUROPEAN SPACE AGENCY; RH - 100K Rad(Si)
Surface MountNONONO
Terminal FormPIN/PEGPIN/PEGPIN/PEG
Terminal PositionSINGLESINGLESINGLE
Time@Peak Reflow Temperature-Max (s)NOT SPECIFIEDNOT SPECIFIEDNOT SPECIFIED
Transistor ApplicationSWITCHINGSWITCHINGSWITCHING
Transistor Element MaterialSILICONSILICONSILICON
Turn-off Time-Max (toff)60.5 ns60.5 ns60.5 ns
Turn-on Time-Max (ton)46 ns46 ns46 ns

Cells highlighted in yellow indicate differing values across parts. Always verify with official datasheets before substitution.

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Get one quote covering all 2 alternatives for STRH12P10GYT — response within 24 hours.

Quick Links

STRH12P10GY1by STMicroelectronics

Power Field-Effect Transistor, 12A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA

STRH12P10GYGby STMicroelectronics

Power Field-Effect Transistor, 12A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA

Why Look for Alternatives?

Finding alternatives for STRH12P10GYT is essential for supply chain resilience. Component shortages, long lead times, and end-of-life notices can disrupt production schedules. Having verified alternative parts ensures your designs remain manufacturable.

When evaluating STRH12P10GYT replacements, consider key parameters such as package compatibility, electrical specifications, and operating temperature range. Our engineering team can help verify pin-to-pin compatibility for your specific application.

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FAQ

What is equivalent to STRH12P10GYT?

Known equivalents for STRH12P10GYT include STRH12P10GY1, STRH12P10GYG. Contact FindMyChip for a full compatibility analysis for your specific application.

Can I use a different manufacturer's part instead of STRH12P10GYT?

In many cases, yes. Cross-manufacturer alternatives exist for most standard components. However, always verify pin compatibility, electrical specs, and package dimensions before substituting in production.

How do I verify STRH12P10GYT alternatives?

Compare the datasheet specifications including pinout, voltage ratings, timing parameters, and package dimensions. FindMyChip's engineering team can help with compatibility verification — submit an RFQ to get started.