STRH12P10GY1 STMicroelectronics Integrated Circuit (Transistor Outline, Vertical) In Stock
STMicroelectronics STRH12P10GY1 is a radiation-hardened P-channel power MOSFET rated at 100 V and 12 A with 0.3 Ω on-resistance for space applications. Qualified to AEC-Q101 space standards and packaged in TO-257AA with an avalanche energy rating of 112 mJ. Available from authorized distributors with worldwide shipping.
- Manufacturer
- STMicroelectronics
- Package
- Transistor Outline, Vertical
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- STRH12P10GY1 Datasheet PDF
- Category
- Integrated Circuit
- Temp Range
- ?°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- Radiation-hardened P-channel MOSFET rated 100 V / 12 A with 0.3 Ω Rds(on) for satellite and space power systems
- 112 mJ avalanche energy rating (Eas) ensuring robust unclamped inductive switching (UIS) protection in space environments
- TO-257AA (JEDEC-95) package with built-in body diode optimized for high-reliability space power management designs
Applications
The STRH12P10GY1 is designed for radiation-hardened power switching and load management in satellite, spacecraft, and high-reliability aerospace systems. Its 100 V / 12 A ratings make it suitable for power distribution units, battery management circuits, and DC-DC converter designs aboard LEO and GEO satellites. The built-in body diode and avalanche energy capability support synchronous rectification and inductive load switching in harsh space radiation environments.
Specifications
| YTEOL | 5.05 |
| Avalanche Energy Rating (Eas) | 112mJ |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 100V |
| Drain Current-Max (ID) | 12A |
| Drain-source On Resistance-Max | 0.3Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 85pF |
| JEDEC-95 Code | TO-257AA |
| JESD-30 Code | R-XSFM-P3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | UNSPECIFIED |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | P-CHANNEL |
| Power Dissipation-Max (Abs) | 75W |
| Pulsed Drain Current-Max (IDM) | 48A |
| Surface Mount | NO |
| Terminal Form | PIN/PEG |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Turn-off Time-Max (toff) | 60.5ns |
| Turn-on Time-Max (ton) | 46ns |
| Package | Transistor Outline, Vertical |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | France |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What drain-source breakdown voltage and continuous drain current does the STRH12P10GY1 support in space power applications?
The STRH12P10GY1 is rated for a drain-source breakdown voltage minimum of 100 V and a maximum continuous drain current of 12 A. This combination makes it well suited for satellite power distribution switching, where high bus voltages and moderate load currents are common in 28 V to 100 V regulated power architectures.
How does the STRH12P10GY1's avalanche energy rating protect circuits with inductive loads in space applications?
With an avalanche energy rating (Eas) of 112 mJ, the STRH12P10GY1 can safely absorb energy during unclamped inductive switching (UIS) events. This is essential in space power systems driving electromagnetic actuators or relay coils, where inductive kickback voltage spikes can otherwise damage MOSFETs that lack sufficient avalanche capability.
Which package does the STRH12P10GY1 use and how does it fit space-qualified PCB layouts?
The STRH12P10GY1 is housed in the TO-257AA (JEDEC-95 code) surface-mount package, a vertical transistor outline format optimized for high-reliability space PCB assemblies. Its 3-pin footprint allows compact placement in power conditioning modules, and the package supports the thermal dissipation needed for 12 A switching at 100 V in vacuum environments.
What on-resistance does the STRH12P10GY1 exhibit and how does it affect power dissipation in a 12 A switching circuit?
The STRH12P10GY1 has a maximum Rds(on) of 0.3 Ω. At the full rated drain current of 12 A, conduction losses reach up to 43.2 W (I²×R), so thermal management through proper heatsinking or package-level conduction paths is critical in high-current satellite power stages operating over the device's full temperature range.
Related Guides
CL31A107MQHNNNE 1206 100 uF MLCC Selection Guide
How to choose CL31A107MQHNNNE and related 1206 MLCCs for low-voltage bulk capacitance and regulator stability.
Jul 2, 2026
CL05B103KB5NNNC 0402 10 nF X7R MLCC Selection Guide
How to choose CL05B103KB5NNNC and related 0402 MLCCs for bypassing, filtering, voltage derating, and sourcing.
Jul 2, 2026
ADAQ7768-1 Design Guide for Precision Vibration and Dynamic Signal Measurement
Design ADAQ7768-1 precision data acquisition channels for vibration and dynamic sensing with the right bandwidth, reference, clock, and layout choices.
Jun 30, 2026
AD5204BRZ10 Design Guide for SPI-Controlled Gain and Offset Calibration
Design AD5204BRZ10 digital potentiometer calibration loops with bounded trim span, safe wiper current, clean SPI routing, and reliable startup codes.
Jun 30, 2026
Why Buy from FindMyChip
About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
In Stock · 24h Response · Worldwide Shipping
Response within 24 hours · Worldwide shipping
“Their engineering team helped us find a pin-compatible alternative when our original MCU went EOL.”