STRH12P10GY1 STMicroelectronics Integrated Circuit (Transistor Outline, Vertical) In Stock
STMicroelectronics STRH12P10GY1 is a radiation-hardened P-channel power MOSFET rated at 100 V and 12 A with 0.3 Ω on-resistance for space applications. Qualified to AEC-Q101 space standards and packaged in TO-257AA with an avalanche energy rating of 112 mJ. Available from authorized distributors with worldwide shipping.
- Manufacturer
- STMicroelectronics
- Package
- Transistor Outline, Vertical
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- STRH12P10GY1 Datasheet PDF
- Category
- Integrated Circuit
- Temp Range
- ?°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of STRH12P10GY1?
- Radiation-hardened P-channel MOSFET rated 100 V / 12 A with 0.3 Ω Rds(on) for satellite and space power systems
- 112 mJ avalanche energy rating (Eas) ensuring robust unclamped inductive switching (UIS) protection in space environments
- TO-257AA (JEDEC-95) package with built-in body diode optimized for high-reliability space power management designs
What is STRH12P10GY1 used for?
The STRH12P10GY1 is designed for radiation-hardened power switching and load management in satellite, spacecraft, and high-reliability aerospace systems. Its 100 V / 12 A ratings make it suitable for power distribution units, battery management circuits, and DC-DC converter designs aboard LEO and GEO satellites. The built-in body diode and avalanche energy capability support synchronous rectification and inductive load switching in harsh space radiation environments.
What are the specifications of STRH12P10GY1?
| YTEOL | 5.05 |
| Avalanche Energy Rating (Eas) | 112mJ |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 100V |
| Drain Current-Max (ID) | 12A |
| Drain-source On Resistance-Max | 0.3Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 85pF |
| JEDEC-95 Code | TO-257AA |
| JESD-30 Code | R-XSFM-P3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | UNSPECIFIED |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | P-CHANNEL |
| Power Dissipation-Max (Abs) | 75W |
| Pulsed Drain Current-Max (IDM) | 48A |
| Surface Mount | NO |
| Terminal Form | PIN/PEG |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Turn-off Time-Max (toff) | 60.5ns |
| Turn-on Time-Max (ton) | 46ns |
| Package | Transistor Outline, Vertical |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | France |
Where can I find the STRH12P10GY1 datasheet?
STRH12P10GY1 Datasheet DownloadOfficial datasheet from STMicroelectronics
What are equivalent replacements for STRH12P10GY1?
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What drain-source breakdown voltage and continuous drain current does the STRH12P10GY1 support in space power applications?
The STRH12P10GY1 is rated for a drain-source breakdown voltage minimum of 100 V and a maximum continuous drain current of 12 A. This combination makes it well suited for satellite power distribution switching, where high bus voltages and moderate load currents are common in 28 V to 100 V regulated power architectures.
How does the STRH12P10GY1's avalanche energy rating protect circuits with inductive loads in space applications?
With an avalanche energy rating (Eas) of 112 mJ, the STRH12P10GY1 can safely absorb energy during unclamped inductive switching (UIS) events. This is essential in space power systems driving electromagnetic actuators or relay coils, where inductive kickback voltage spikes can otherwise damage MOSFETs that lack sufficient avalanche capability.
Which package does the STRH12P10GY1 use and how does it fit space-qualified PCB layouts?
The STRH12P10GY1 is housed in the TO-257AA (JEDEC-95 code) surface-mount package, a vertical transistor outline format optimized for high-reliability space PCB assemblies. Its 3-pin footprint allows compact placement in power conditioning modules, and the package supports the thermal dissipation needed for 12 A switching at 100 V in vacuum environments.
What on-resistance does the STRH12P10GY1 exhibit and how does it affect power dissipation in a 12 A switching circuit?
The STRH12P10GY1 has a maximum Rds(on) of 0.3 Ω. At the full rated drain current of 12 A, conduction losses reach up to 43.2 W (I²×R), so thermal management through proper heatsinking or package-level conduction paths is critical in high-current satellite power stages operating over the device's full temperature range.
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Why Buy from FindMyChip
About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
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