STP20N65M5Alternatives & Equivalent Parts

About STP20N65M5

STP20N65M5 is a JFET (N-Channel) component manufactured by STMicroelectronics. It comes in a Transistor Outline, Vertical package. Below you'll find known alternative and equivalent parts that can serve as replacements in your design.

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Specification Comparison

ParameterSTP20N65M5SourceM24128-BRMN6PM24C16-DFCU6TP/KM95320-DFMN6TPSTB18N55M5STF100N10F7STP20N60M2-EP
ManufacturerSTMicroelectronicsSTMicroelectronicsSTMicroelectronicsSTMicroelectronicsSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Package TypeTransistor Outline, VerticalSmall Outline PackagesBGASmall Outline PackagesOtherTransistor Outline, VerticalTransistor Outline, Vertical
Pin Count3848433
Temperature Range~ 150.0°C-40.0°C ~ 85.0°C-40.0°C ~ 85.0°C-40.0°C ~ 85.0°C~ 150.0°C~ 175.0°C-55.0°C ~ 150.0°C
Price$1.4038$0.1660$0.1607$0.2161$1.5125$0.8720—
StockIn StockIn StockIn StockIn StockIn StockIn StockIn Stock
LifecycleACTIVEACTIVE UNCONFIRMEDACTIVEACTIVEOBSOLETEACTIVEACTIVE
Electrical Parameters
Factory Lead Time14 Weeks4 Weeks10 Weeks8 Weeks—13 Weeks—
YTEOL6269066
Avalanche Energy Rating (Eas)270 mJ———200 mJ400 mJ138 mJ
Case ConnectionDRAIN————ISOLATEDDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE———SINGLE WITH BUILT-IN DIODESINGLE WITH BUILT-IN DIODESINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min650 V———550 V100 V600 V
Drain Current-Max (ID)18 A———13 A32 A13 A
Drain-source On Resistance-Max0.19 Ω———0.24 Ω0.008 Ω0.278 Ω
FET TechnologyMETAL-OXIDE SEMICONDUCTOR———METAL-OXIDE SEMICONDUCTORMETAL-OXIDE SEMICONDUCTORMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 CodeTO-220AB———TO-263ABTO-220ABTO-220AB
JESD-30 CodeR-PSFM-T3R-PDSO-G8R-PBGA-B4R-PDSO-G8R-PSSO-G2R-PSFM-T3R-PSFM-T3
JESD-609 Codee3e4—e4e3—e3
Number of Elements1———111
Operating ModeENHANCEMENT MODESYNCHRONOUSSYNCHRONOUS—ENHANCEMENT MODEENHANCEMENT MODEENHANCEMENT MODE
Package Body MaterialPLASTIC/EPOXYPLASTIC/EPOXYPLASTIC/EPOXYPLASTIC/EPOXYPLASTIC/EPOXYPLASTIC/EPOXYPLASTIC/EPOXY
Package ShapeRECTANGULARRECTANGULARRECTANGULARRECTANGULARRECTANGULARRECTANGULARRECTANGULAR
Package StyleFLANGE MOUNTSMALL OUTLINEGRID ARRAY, VERY THIN PROFILE, FINE PITCHSMALL OUTLINESMALL OUTLINEFLANGE MOUNTFLANGE MOUNT
Polarity/Channel TypeN-CHANNEL———N-CHANNELN-CHANNELN-CHANNEL
Power Dissipation-Max (Abs)130 W———90 W30 W110 W
Pulsed Drain Current-Max (IDM)72 A———52 A180 A52 A
Surface MountNOYESYESYESYESNONO
Terminal FinishMatte Tin (Sn) - annealedNickel/Palladium/Gold (Ni/Pd/Au)—NICKEL PALLADIUM GOLDMATTE TIN—Matte Tin (Sn)
Terminal FormTHROUGH-HOLEGULL WINGBALLGULL WINGGULL WINGTHROUGH-HOLETHROUGH-HOLE
Terminal PositionSINGLEDUALBOTTOMDUALSINGLESINGLESINGLE
Transistor ApplicationSWITCHING———SWITCHINGSWITCHINGSWITCHING
Transistor Element MaterialSILICON———SILICONSILICONSILICON
Clock Frequency-Max (fCLK)—0.4 MHz0.4 MHz————
Data Retention Time-Min—200—200———
Endurance—4000000 Write/Erase Cycles—4000000 Write/Erase Cycles———
I2C Control Byte—1010DDDR—————
Memory Density—131072 bit16384 bit32768 bit———
Memory IC Type—EEPROMEEPROMEEPROM———
Memory Width—888———
Number of Functions—11————
Number of Words—16384 words2048 words4096 words———
Number of Words Code—1600020004000———
Organization—16KX82KX84KX8———
Package Equivalence Code—SOP8,.25—SOP8,.25———
Parallel/Serial—SERIALSERIALSERIAL———
Qualification Status—Not Qualified—Not Qualified———
Serial Bus Type—I2CI2CSPI———
Standby Current-Max—0.000001 A—0.000001 A———
Supply Current-Max—0.0025 mA—0.005 mA———
Supply Voltage-Max (Vsup)—5.5 V5.5 V————
Supply Voltage-Min (Vsup)—1.8 V1.6 V————
Supply Voltage-Nom (Vsup)—2.5 V1.8 V————
Technology—CMOSCMOSCMOS———
Temperature Grade—INDUSTRIALINDUSTRIALINDUSTRIAL———
Terminal Pitch—1.27 mm0.4 mm1.27 mm———
Write Cycle Time-Max (tWC)—5 ms—————
Write Protection—HARDWARE—HARDWARE/SOFTWARE———
## M24128-BRMN6P Alternates Showing results—Image—————
Peak Reflow Temperature (Cel)——260260245NOT SPECIFIED—
Time@Peak Reflow Temperature-Max (s)——303030NOT SPECIFIED—
Additional Feature————ULTRA-LOW RESISTANCE—AVALANCHE RATED
Feedback Cap-Max (Crss)——————1.2 pF

Cells highlighted in yellow indicate differing values across parts. Always verify with official datasheets before substitution.

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Quick Links

STP20N60M2-EPby STMicroelectronics

Power Field-Effect Transistor, 13A I(D), 600V, 0.278ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Why Look for Alternatives?

Finding alternatives for STP20N65M5 is essential for supply chain resilience. Component shortages, long lead times, and end-of-life notices can disrupt production schedules. Having verified alternative parts ensures your designs remain manufacturable.

When evaluating STP20N65M5 replacements, consider key parameters such as package compatibility, electrical specifications, and operating temperature range. Our engineering team can help verify pin-to-pin compatibility for your specific application.

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FAQ

What is equivalent to STP20N65M5?

Known equivalents for STP20N65M5 include M24128-BRMN6P, M24C16-DFCU6TP/K, M95320-DFMN6TP. Contact FindMyChip for a full compatibility analysis for your specific application.

Can I use a different manufacturer's part instead of STP20N65M5?

In many cases, yes. Cross-manufacturer alternatives exist for most standard components. However, always verify pin compatibility, electrical specs, and package dimensions before substituting in production.

How do I verify STP20N65M5 alternatives?

Compare the datasheet specifications including pinout, voltage ratings, timing parameters, and package dimensions. FindMyChip's engineering team can help with compatibility verification — submit an RFQ to get started.