STGWA40IH65DF STMicroelectronics Transistor IGBT (Transistor Outline, Vertical) In Stock
STMicroelectronics STGWA40IH65DF is a trench gate field-stop IGBT rated 650 V and 40 A continuous collector current with an integrated soft-recovery diode in a TO-247 long-leads package. Key specs include 80 A pulsed collector current, 20 V maximum gate-emitter voltage, and 7 V threshold voltage. Available from stock with worldwide shipping.
- Manufacturer
- STMicroelectronics
- Package
- Transistor Outline, Vertical
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- STGWA40IH65DF Datasheet PDF
- Category
- Transistor IGBT
- Price
- From $1.4347(MOQ 1)
- Temp Range
- -55.0°C to 175.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 650 V / 40 A trench gate field-stop IGBT with integrated soft-recovery anti-parallel diode optimized for soft-switching topologies
- 80 A pulsed collector current rating enabling high-peak-power operation in resonant and ZVS converter designs
- TO-247 long-leads package provides excellent thermal performance and easy through-hole mounting for high-power industrial applications
Applications
The STGWA40IH65DF is well suited for resonant and soft-switching power conversion stages such as LLC converters, phase-shifted full-bridge inverters, and induction heating systems where low switching losses are critical. Its 650 V blocking voltage and integrated fast diode make it an effective choice for three-phase motor drives and UPS systems. Industrial welding equipment and renewable energy inverters also benefit from its high pulsed current capability and robust TO-247 package.
Specifications
| Factory Lead Time | 15Weeks |
| YTEOL | 9 |
| Case Connection | COLLECTOR |
| Collector Current-Max (IC) | 80A |
| Collector-Emitter Voltage-Max | 650V |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Gate-Emitter Thr Voltage-Max | 7V |
| Gate-Emitter Voltage-Max | 20V |
| JEDEC-95 Code | TO-247 |
| JESD-30 Code | R-PSFM-T3 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 238W |
| Surface Mount | NO |
| Terminal Finish | Matte Tin (Sn) - annealed |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Element Material | SILICON |
| Turn-off Time-Nom (toff) | 263ns |
| VCEsat-Max | 2V |
| Package | Transistor Outline, Vertical |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What is the maximum continuous collector current and pulsed collector current of the STGWA40IH65DF?
The STGWA40IH65DF supports a continuous collector current of 40 A and a pulsed collector current of up to 80 A. These ratings allow the device to handle transient overload conditions in high-power applications such as induction heating and motor drive inverters without exceeding its safe operating area.
Which soft-switching converter topologies are best matched to the STGWA40IH65DF IH-series IGBT?
The IH series designation indicates optimization for soft-switching circuits. LLC resonant converters, zero-voltage-switching (ZVS) full-bridge stages, and phase-shifted PWM topologies operating at 650 V bus voltages benefit from the device's low tail-current behavior and the integrated soft-recovery diode, which reduces reverse-recovery losses at switching frequencies up to several tens of kHz.
How does the STGWA40IH65DF compare to a standard hard-switching IGBT when used in an induction heating design?
Unlike a standard hard-switching IGBT, the STGWA40IH65DF is specifically engineered for soft-switching operation, delivering lower turn-off energy (Eoff) at 650 V / 40 A. The integrated anti-parallel diode has a soft-recovery characteristic, minimizing voltage spikes and EMI. This translates to reduced heatsink requirements and higher efficiency in induction heating inverters running at 20 kHz to 100 kHz.
What gate drive voltage and threshold voltage should be used to ensure reliable switching of the STGWA40IH65DF?
The gate-emitter threshold voltage (VGE(th)) has a maximum of 7 V, so a gate drive of +15 V for turn-on and -8 V to -15 V for turn-off is recommended to achieve fast, reliable switching while keeping the device safely within its 20 V maximum gate-emitter voltage rating. A gate resistor of typically 4.7 Ω to 22 Ω is used to control dv/dt and di/dt.
What package does the STGWA40IH65DF use and what are the typical thermal management considerations?
The STGWA40IH65DF is housed in a TO-247 long-leads through-hole package with a maximum junction temperature of 150 °C. Effective thermal management requires a heatsink with sufficiently low thermal resistance to keep the junction below this limit at full 40 A load. Thermal interface material between the package and heatsink is essential given its power dissipation at high current levels.
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| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $2.5200 | $2.52 |
| 30+ | $2.2400 | $67.20 |
| 120+ | $2.0600 | $247.20 |
| 1020+ | $1.5808 | $1612.37 |
| 2010+ | $1.4833 | $2981.51 |
| 2400+ | $1.4347 | $3443.26 |
In Stock · 24h Response · Worldwide Shipping
Response within 24 hours · Worldwide shipping
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