STGWA40H120DF2Alternatives & Equivalent Parts

About STGWA40H120DF2

STGWA40H120DF2 is a Transistor IGBT component manufactured by STMicroelectronics. It comes in a Transistor Outline, Vertical package. Below you'll find known alternative and equivalent parts that can serve as replacements in your design.

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Specification Comparison

ParameterSTGWA40H120DF2SourceSTGWA40H120F2STGWA40H65DFB2STGWA40IH65DFSTGWA40H65DHFB2STGWA40HP65FBSTGWA40H65FBSTGWA40HP65FB2
ManufacturerSTMicroelectronicsSTMicroelectronicsSTMicroelectronicsSTMicroelectronicsSTMicroelectronicsSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Package TypeTransistor Outline, VerticalTransistor Outline, VerticalTransistor Outline, VerticalTransistor Outline, VerticalTransistor Outline, VerticalTransistor Outline, VerticalTransistor Outline, VerticalTransistor Outline, Vertical
Pin Count33333333
Temperature Range-55.0°C ~ 175.0°C-55.0°C ~ 175.0°C-55.0°C ~ 175.0°C-55.0°C ~ 175.0°C-55.0°C ~ 175.0°C-55.0°C ~ 175.0°C-55.0°C ~ 175.0°C-55.0°C ~ 175.0°C
Price$2.3125$3.0662$1.3500$1.4347$1.4019$1.6040$1.8625$1.5300
StockIn StockIn StockIn StockIn StockIn StockIn StockIn StockIn Stock
LifecycleACTIVEACTIVEACTIVEACTIVEOBSOLETEACTIVEACTIVEACTIVE
Electrical Parameters
Factory Lead Time15 Weeks15 Weeks15 Weeks15 Weeks15 Weeks15 Weeks15 Weeks15 Weeks
YTEOL45.355905.355.355
Collector Current-Max (IC)80 A80 A72 A80 A72 A80 A80 A72 A
Collector-Emitter Voltage-Max1200 V1200 V650 V650 V650 V650 V650 V650 V
ConfigurationSINGLE WITH BUILT-IN DIODESINGLESINGLE WITH BUILT-IN DIODESINGLE WITH BUILT-IN DIODESINGLE WITH BUILT-IN DIODESINGLE WITH BUILT-IN DIODESINGLESINGLE WITH BUILT-IN DIODE
Gate-Emitter Thr Voltage-Max7 V7 V7 V7 V7 V7 V7 V7 V
Gate-Emitter Voltage-Max20 V20 V20 V20 V20 V20 V20 V20 V
JEDEC-95 CodeTO-247TO-247TO-247TO-247TO-247TO-247TO-247TO-247
JESD-30 CodeR-PSFM-T3R-PSFM-T3R-PSFM-T3R-PSFM-T3R-PSFM-T3R-PSFM-T3R-PSFM-T3R-PSFM-T3
Number of Elements11111111
Package Body MaterialPLASTIC/EPOXYPLASTIC/EPOXYPLASTIC/EPOXYPLASTIC/EPOXYPLASTIC/EPOXYPLASTIC/EPOXYPLASTIC/EPOXYPLASTIC/EPOXY
Package ShapeRECTANGULARRECTANGULARRECTANGULARRECTANGULARRECTANGULARRECTANGULARRECTANGULARRECTANGULAR
Package StyleFLANGE MOUNTFLANGE MOUNTFLANGE MOUNTFLANGE MOUNTFLANGE MOUNTFLANGE MOUNTFLANGE MOUNTFLANGE MOUNT
Peak Reflow Temperature (Cel)NOT SPECIFIEDNOT SPECIFIEDNOT SPECIFIEDNOT SPECIFIEDNOT SPECIFIEDNOT SPECIFIED
Polarity/Channel TypeN-CHANNELN-CHANNELN-CHANNELN-CHANNELN-CHANNELN-CHANNELN-CHANNELN-CHANNEL
Power Dissipation-Max (Abs)468 W468 W230 W238 W230 W283 W283 W230 W
Surface MountNONONONONONONONO
Terminal FormTHROUGH-HOLETHROUGH-HOLETHROUGH-HOLETHROUGH-HOLETHROUGH-HOLETHROUGH-HOLETHROUGH-HOLETHROUGH-HOLE
Terminal PositionSINGLESINGLESINGLESINGLESINGLESINGLESINGLESINGLE
Time@Peak Reflow Temperature-Max (s)NOT SPECIFIEDNOT SPECIFIEDNOT SPECIFIEDNOT SPECIFIEDNOT SPECIFIEDNOT SPECIFIED
Transistor ApplicationPOWER CONTROLPOWER CONTROLPOWER CONTROLPOWER CONTROLPOWER CONTROLPOWER CONTROLPOWER CONTROL
Transistor Element MaterialSILICONSILICONSILICONSILICONSILICONSILICONSILICONSILICON
Turn-off Time-Nom (toff)351 ns351 ns158 ns263 ns183 ns202 ns202 ns189 ns
Turn-on Time-Nom (ton)56 ns56 ns34 ns24.6 ns169 ns52 ns
VCEsat-Max2.6 V2.6 V2 V2 V2 V2 V2 V2 V
Case ConnectionCOLLECTORCOLLECTORCOLLECTORCOLLECTORCOLLECTORCOLLECTOR
Date Of Intro2019-06-14
JESD-609 Codee3e3e3
Terminal FinishMatte Tin (Sn)Matte Tin (Sn) - annealedMatte Tin (Sn)

Cells highlighted in yellow indicate differing values across parts. Always verify with official datasheets before substitution.

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Quick Links

STGWA40H120F2by STMicroelectronics

Insulated Gate Bipolar Transistor, 80A I(C), 1200V V(BR)CES, N-Channel, TO-247

STGWA40H65DFB2by STMicroelectronics

Insulated Gate Bipolar Transistor, 72A I(C), 650V V(BR)CES, N-Channel, TO-247

STGWA40IH65DFby STMicroelectronics

Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel, TO-247

STGWA40H65DHFB2by STMicroelectronics

Insulated Gate Bipolar Transistor, 72A I(C), 650V V(BR)CES, N-Channel, TO-247

STGWA40HP65FBby STMicroelectronics

Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel, TO-247

STGWA40H65FBby STMicroelectronics

Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel, TO-247

STGWA40HP65FB2by STMicroelectronics

Insulated Gate Bipolar Transistor, 72A I(C), 650V V(BR)CES, N-Channel, TO-247

Why Look for Alternatives?

Finding alternatives for STGWA40H120DF2 is essential for supply chain resilience. Component shortages, long lead times, and end-of-life notices can disrupt production schedules. Having verified alternative parts ensures your designs remain manufacturable.

When evaluating STGWA40H120DF2 replacements, consider key parameters such as package compatibility, electrical specifications, and operating temperature range. Our engineering team can help verify pin-to-pin compatibility for your specific application.

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FAQ

What is equivalent to STGWA40H120DF2?

Known equivalents for STGWA40H120DF2 include STGWA40H120F2, STGWA40H65DFB2, STGWA40IH65DF. Contact FindMyChip for a full compatibility analysis for your specific application.

Can I use a different manufacturer's part instead of STGWA40H120DF2?

In many cases, yes. Cross-manufacturer alternatives exist for most standard components. However, always verify pin compatibility, electrical specs, and package dimensions before substituting in production.

How do I verify STGWA40H120DF2 alternatives?

Compare the datasheet specifications including pinout, voltage ratings, timing parameters, and package dimensions. FindMyChip's engineering team can help with compatibility verification — submit an RFQ to get started.