SCTWA60N12G2-4AGAlternatives & Equivalent Parts
About SCTWA60N12G2-4AG
SCTWA60N12G2-4AG is a MOSFET (P-Channel) component manufactured by STMicroelectronics. It comes in a Other package. Below you'll find known alternative and equivalent parts that can serve as replacements in your design.
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Specification Comparison
| Parameter | SCTWA60N12G2-4AGSource | SCTWA60N120G2AG | SCTWA60N120G2-4 |
|---|---|---|---|
| Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Package Type | Other | Transistor Outline, Vertical | Other |
| Pin Count | 4 | 3 | 4 |
| Temperature Range | -55.0°C ~ 200.0°C | -55.0°C ~ 200.0°C | — |
| Price | — | — | $10.3488 |
| Stock | In Stock | In Stock | In Stock |
| Lifecycle | OBSOLETE | OBSOLETE | OBSOLETE |
| Electrical Parameters | |||
| YTEOL | 0 | 0 | 0 |
| Case Connection | DRAIN | DRAIN | — |
| Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | — |
| DS Breakdown Voltage-Min | 1200 V | 1200 V | — |
| Drain Current-Max (ID) | 52 A | 52 A | — |
| Drain-source On Resistance-Max | 0.058 Ω | 0.058 Ω | — |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | — |
| Feedback Cap-Max (Crss) | 18 pF | 18 pF | — |
| JESD-30 Code | R-PSFM-T4 | R-PSFM-T3 | — |
| Number of Elements | 1 | 1 | — |
| Operating Mode | ENHANCEMENT MODE | ENHANCEMENT MODE | — |
| Package Body Material | PLASTIC/EPOXY | PLASTIC/EPOXY | — |
| Package Shape | RECTANGULAR | RECTANGULAR | — |
| Package Style | FLANGE MOUNT | FLANGE MOUNT | — |
| Polarity/Channel Type | N-CHANNEL | N-CHANNEL | — |
| Power Dissipation-Max (Abs) | 388 W | 388 W | — |
| Pulsed Drain Current-Max (IDM) | 156 A | 156 A | — |
| Reference Standard | AEC-Q101 | AEC-Q101 | — |
| Surface Mount | NO | NO | — |
| Terminal Form | THROUGH-HOLE | THROUGH-HOLE | — |
| Terminal Position | SINGLE | SINGLE | — |
| Transistor Application | SWITCHING | SWITCHING | — |
| Transistor Element Material | SILICON CARBIDE | SILICON CARBIDE | — |
| Factory Lead Time | — | — | 32 Weeks |
| JESD-609 Code | — | — | e3 |
| Terminal Finish | — | — | Matte Tin (Sn) - annealed |
Cells highlighted in yellow indicate differing values across parts. Always verify with official datasheets before substitution.
Need pricing on these alternatives?
Get one quote covering all 2 alternatives for SCTWA60N12G2-4AG — response within 24 hours.
Quick Links
Power Field-Effect Transistor, 52A I(D), 1200V, 0.058ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET
Why Look for Alternatives?
Finding alternatives for SCTWA60N12G2-4AG is essential for supply chain resilience. Component shortages, long lead times, and end-of-life notices can disrupt production schedules. Having verified alternative parts ensures your designs remain manufacturable.
When evaluating SCTWA60N12G2-4AG replacements, consider key parameters such as package compatibility, electrical specifications, and operating temperature range. Our engineering team can help verify pin-to-pin compatibility for your specific application.
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FAQ
What is equivalent to SCTWA60N12G2-4AG?
Known equivalents for SCTWA60N12G2-4AG include SCTWA60N120G2AG, SCTWA60N120G2-4. Contact FindMyChip for a full compatibility analysis for your specific application.
Can I use a different manufacturer's part instead of SCTWA60N12G2-4AG?
In many cases, yes. Cross-manufacturer alternatives exist for most standard components. However, always verify pin compatibility, electrical specs, and package dimensions before substituting in production.
How do I verify SCTWA60N12G2-4AG alternatives?
Compare the datasheet specifications including pinout, voltage ratings, timing parameters, and package dimensions. FindMyChip's engineering team can help with compatibility verification — submit an RFQ to get started.