SCTWA60N120G2AGAlternatives & Equivalent Parts
About SCTWA60N120G2AG
SCTWA60N120G2AG is a MOSFET (P-Channel) component manufactured by STMicroelectronics. It comes in a Transistor Outline, Vertical package. Below you'll find known alternative and equivalent parts that can serve as replacements in your design.
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Specification Comparison
| Parameter | SCTWA60N120G2AGSource | SCTWA60N120G2-4 | SCTWA60N12G2-4AG |
|---|---|---|---|
| Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Package Type | Transistor Outline, Vertical | Other | Other |
| Pin Count | 3 | 4 | 4 |
| Temperature Range | -55.0°C ~ 200.0°C | — | -55.0°C ~ 200.0°C |
| Price | — | $10.3488 | — |
| Stock | In Stock | In Stock | In Stock |
| Lifecycle | OBSOLETE | OBSOLETE | OBSOLETE |
| Electrical Parameters | |||
| YTEOL | 0 | 0 | 0 |
| Case Connection | DRAIN | — | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE | — | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 1200 V | — | 1200 V |
| Drain Current-Max (ID) | 52 A | — | 52 A |
| Drain-source On Resistance-Max | 0.058 Ω | — | 0.058 Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | — | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 18 pF | — | 18 pF |
| JESD-30 Code | R-PSFM-T3 | — | R-PSFM-T4 |
| Number of Elements | 1 | — | 1 |
| Operating Mode | ENHANCEMENT MODE | — | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY | — | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR | — | RECTANGULAR |
| Package Style | FLANGE MOUNT | — | FLANGE MOUNT |
| Polarity/Channel Type | N-CHANNEL | — | N-CHANNEL |
| Power Dissipation-Max (Abs) | 388 W | — | 388 W |
| Pulsed Drain Current-Max (IDM) | 156 A | — | 156 A |
| Reference Standard | AEC-Q101 | — | AEC-Q101 |
| Surface Mount | NO | — | NO |
| Terminal Form | THROUGH-HOLE | — | THROUGH-HOLE |
| Terminal Position | SINGLE | — | SINGLE |
| Transistor Application | SWITCHING | — | SWITCHING |
| Transistor Element Material | SILICON CARBIDE | — | SILICON CARBIDE |
| Factory Lead Time | — | 32 Weeks | — |
| JESD-609 Code | — | e3 | — |
| Terminal Finish | — | Matte Tin (Sn) - annealed | — |
Cells highlighted in yellow indicate differing values across parts. Always verify with official datasheets before substitution.
Need pricing on these alternatives?
Get one quote covering all 2 alternatives for SCTWA60N120G2AG — response within 24 hours.
Quick Links
Power Field-Effect Transistor, 52A I(D), 1200V, 0.058ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET
Why Look for Alternatives?
Finding alternatives for SCTWA60N120G2AG is essential for supply chain resilience. Component shortages, long lead times, and end-of-life notices can disrupt production schedules. Having verified alternative parts ensures your designs remain manufacturable.
When evaluating SCTWA60N120G2AG replacements, consider key parameters such as package compatibility, electrical specifications, and operating temperature range. Our engineering team can help verify pin-to-pin compatibility for your specific application.
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FAQ
What is equivalent to SCTWA60N120G2AG?
Known equivalents for SCTWA60N120G2AG include SCTWA60N120G2-4, SCTWA60N12G2-4AG. Contact FindMyChip for a full compatibility analysis for your specific application.
Can I use a different manufacturer's part instead of SCTWA60N120G2AG?
In many cases, yes. Cross-manufacturer alternatives exist for most standard components. However, always verify pin compatibility, electrical specs, and package dimensions before substituting in production.
How do I verify SCTWA60N120G2AG alternatives?
Compare the datasheet specifications including pinout, voltage ratings, timing parameters, and package dimensions. FindMyChip's engineering team can help with compatibility verification — submit an RFQ to get started.