SCTWA40N120G2VAlternatives & Equivalent Parts
About SCTWA40N120G2V
SCTWA40N120G2V is a MOSFET (P-Channel) component manufactured by STMicroelectronics. It comes in a Transistor Outline, Vertical package. Below you'll find known alternative and equivalent parts that can serve as replacements in your design.
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Specification Comparison
| Parameter | SCTWA40N120G2VSource | SCTWA40N120G2V-4 |
|---|---|---|
| Manufacturer | STMicroelectronics | STMicroelectronics |
| Package Type | Transistor Outline, Vertical | Other |
| Pin Count | 3 | 4 |
| Temperature Range | -55.0°C ~ 200.0°C | -55.0°C ~ 200.0°C |
| Price | $9.7500 | $13.9400 |
| Stock | In Stock | In Stock |
| Lifecycle | OBSOLETE | OBSOLETE |
| Electrical Parameters | ||
| Factory Lead Time | 32 Weeks | 32 Weeks |
| YTEOL | 0 | 0 |
| Case Connection | DRAIN | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 1200 V | 1200 V |
| Drain Current-Max (ID) | 36 A | 36 A |
| Drain-source On Resistance-Max | 0.1 Ω | 0.1 Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 15 pF | 15 pF |
| JESD-30 Code | R-PSFM-T3 | R-PSFM-T4 |
| Number of Elements | 1 | 1 |
| Operating Mode | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR | RECTANGULAR |
| Package Style | FLANGE MOUNT | FLANGE MOUNT |
| Polarity/Channel Type | N-CHANNEL | N-CHANNEL |
| Power Dissipation-Max (Abs) | 278 W | 277 W |
| Pulsed Drain Current-Max (IDM) | 108 A | 107 A |
| Surface Mount | NO | NO |
| Terminal Form | THROUGH-HOLE | THROUGH-HOLE |
| Terminal Position | SINGLE | SINGLE |
| Transistor Application | SWITCHING | SWITCHING |
| Transistor Element Material | SILICON CARBIDE | SILICON CARBIDE |
| JESD-609 Code | — | e3 |
| Terminal Finish | — | Matte Tin (Sn) - annealed |
Cells highlighted in yellow indicate differing values across parts. Always verify with official datasheets before substitution.
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Quick Links
Power Field-Effect Transistor, 36A I(D), 1200V, 0.1ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET
Why Look for Alternatives?
Finding alternatives for SCTWA40N120G2V is essential for supply chain resilience. Component shortages, long lead times, and end-of-life notices can disrupt production schedules. Having verified alternative parts ensures your designs remain manufacturable.
When evaluating SCTWA40N120G2V replacements, consider key parameters such as package compatibility, electrical specifications, and operating temperature range. Our engineering team can help verify pin-to-pin compatibility for your specific application.
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FAQ
What is equivalent to SCTWA40N120G2V?
Known equivalents for SCTWA40N120G2V include SCTWA40N120G2V-4. Contact FindMyChip for a full compatibility analysis for your specific application.
Can I use a different manufacturer's part instead of SCTWA40N120G2V?
In many cases, yes. Cross-manufacturer alternatives exist for most standard components. However, always verify pin compatibility, electrical specs, and package dimensions before substituting in production.
How do I verify SCTWA40N120G2V alternatives?
Compare the datasheet specifications including pinout, voltage ratings, timing parameters, and package dimensions. FindMyChip's engineering team can help with compatibility verification — submit an RFQ to get started.