CSD18532Q5BTAlternatives & Equivalent Parts
About CSD18532Q5BT
CSD18532Q5BT is a MOSFET (N-Channel) component manufactured by Texas Instruments. It comes in a Other package. Below you'll find known alternative and equivalent parts that can serve as replacements in your design.
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Specification Comparison
| Parameter | CSD18532Q5BTSource | DRV8303DCA | SI2325DS-T1-E3 | UVZ2A331MHD | OPA365AIDBVR | CSD18532NQ5B | CSD18531Q5A | CSD18534Q5A | CSD18537NQ5A | CSD18535KTT | CSD18532KCS | CSD18535KTTT |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Manufacturer | Texas Instruments | Texas Instruments | Vishay | Nichicon | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments |
| Package Type | Other | Small Outline Packages | SOT23 (3-Pin) | Capacitor, Polarized Radial Diameter | SOT23 (5-Pin) | Other | Other | Other | Other | Other | Transistor Outline, Vertical | Other |
| Pin Count | 9 | 49 | 3 | 2 | 5 | 8 | 8 | 8 | 8 | 3 | 3 | 3 |
| Temperature Range | -55.0°C ~ 150.0°C | -40.0°C ~ 125.0°C | -55.0°C ~ 150.0°C | -55.0°C ~ 105.0°C | -40.0°C ~ 125.0°C | -55.0°C ~ 150.0°C | -55.0°C ~ 150.0°C | -55.0°C ~ 150.0°C | -55.0°C ~ 150.0°C | -55.0°C ~ 175.0°C | -55.0°C ~ 175.0°C | -55.0°C ~ 175.0°C |
| Price | $0.9180 | $2.6742 | $0.2771 | $0.5000 | $1.1100 | $1.0244 | $0.5740 | $0.2442 | $0.2412 | $1.7700 | $0.8750 | $2.2337 |
| Stock | In Stock | In Stock | In Stock | In Stock | In Stock | In Stock | In Stock | In Stock | In Stock | In Stock | In Stock | In Stock |
| Lifecycle | ACTIVE | ACTIVE | ACTIVE | ACTIVE | ACTIVE | ACTIVE | ACTIVE | ACTIVE | ACTIVE | ACTIVE | ACTIVE | ACTIVE |
| Electrical Parameters | ||||||||||||
| Pbfree Code | Yes | Yes | — | Yes | Yes | Yes | Yes | Yes | Yes | Yes | Yes | Yes |
| YTEOL | 15 | 15 | 7 | 6 | 15 | 15 | 15 | 15 | 15 | 15 | 15 | 15 |
| Additional Feature | AVALANCHE RATED | — | — | — | — | AVALANCHE RATED | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | AVALANCHE RATED | AVALANCHE RATED | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | AVALANCHE RATED |
| Avalanche Energy Rating (Eas) | 320 mJ | — | — | — | — | 360 mJ | 224 mJ | 80 mJ | 55 mJ | 616 mJ | 281 mJ | 616 mJ |
| Case Connection | DRAIN | — | — | — | — | DRAIN | DRAIN | DRAIN | DRAIN | DRAIN | DRAIN | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE | — | SINGLE WITH BUILT-IN DIODE | — | — | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE | SINGLE WITH BUILT-IN DIODE | SINGLE |
| DS Breakdown Voltage-Min | 60 V | — | 150 V | — | — | 60 V | 60 V | 60 V | 60 V | 60 V | 60 V | 60 V |
| Drain Current-Max (ID) | 100 A | — | 0.53 A | — | — | 100 A | 100 A | 50 A | 50 A | 200 A | 100 A | 200 A |
| Drain-source On Resistance-Max | 0.0043 Ω | — | 1.3 Ω | — | — | 0.0044 Ω | 0.0058 Ω | 0.0124 Ω | 0.017 Ω | 0.0029 Ω | 0.0053 Ω | 0.0029 Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | — | METAL-OXIDE SEMICONDUCTOR | — | — | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 17 pF | — | 16 pF | — | — | 21 pF | 14 pF | 6.5 pF | 5.2 pF | 31 pF | 14 pF | 31 pF |
| JESD-30 Code | R-PDSO-N8 | R-PDSO-G48 | R-PDSO-G3 | — | R-PDSO-G5 | R-PDSO-N5 | R-PDSO-F8 | R-PDSO-N8 | R-PDSO-N8 | R-PSSO-G3 | R-PSFM-T3 | R-PSSO-G3 |
| JESD-609 Code | e3 | e4 | e3 | e3 | e4 | e3 | e3 | e3 | e3 | e3 | e3 | e3 |
| Number of Elements | 1 | — | 1 | — | — | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| Operating Mode | ENHANCEMENT MODE | — | ENHANCEMENT MODE | — | — | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | — | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | CYLINDRICAL PACKAGE | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package Style | SMALL OUTLINE | SMALL OUTLINE, HEAT SINK/SLUG, THIN PROFILE, SHRINK PITCH | SMALL OUTLINE | Radial | SMALL OUTLINE, LOW PROFILE, SHRINK PITCH | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | FLANGE MOUNT | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 260 | 260 | 260 | — | 260 | 260 | 260 | 260 | 260 | 260 | — | 260 |
| Polarity/Channel Type | N-CHANNEL | — | P-CHANNEL | — | — | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| Power Dissipation-Max (Abs) | 156 W | — | 0.75 W | — | — | 156 W | 156 W | 77 W | 75 W | — | 216 W | — |
| Pulsed Drain Current-Max (IDM) | 400 A | — | — | — | — | 400 A | 300 A | 229 A | 151 A | 400 A | 400 A | 400 A |
| Surface Mount | YES | YES | YES | NO | YES | YES | YES | YES | YES | YES | NO | YES |
| Terminal Finish | Matte Tin (Sn) | Nickel/Palladium/Gold (Ni/Pd/Au) | Matte Tin (Sn) | Matte Tin (Sn) | Nickel/Palladium/Gold (Ni/Pd/Au) | Matte Tin (Sn) | Matte Tin (Sn) | Matte Tin (Sn) | Matte Tin (Sn) | Matte Tin (Sn) | Matte Tin (Sn) | Matte Tin (Sn) |
| Terminal Form | NO LEAD | GULL WING | GULL WING | — | GULL WING | NO LEAD | FLAT | NO LEAD | NO LEAD | GULL WING | THROUGH-HOLE | GULL WING |
| Terminal Position | DUAL | DUAL | DUAL | — | DUAL | DUAL | DUAL | DUAL | DUAL | SINGLE | SINGLE | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | 30 | 30 | 30 | — | 30 | 30 | 30 | 30 | 30 | 30 | — | 30 |
| Transistor Application | SWITCHING | — | — | — | — | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| Transistor Element Material | SILICON | — | SILICON | — | — | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| ## CSD18532Q5BT Alternates Showing results | Image | — | — | — | — | — | — | — | — | — | — | — |
| Analog IC - Other Type | — | 3-PHASE BRUSHLESS DC MOTOR CONTROLLER | — | — | — | — | — | — | — | — | — | — |
| Number of Functions | — | 1 | — | — | 1 | — | — | — | — | — | — | — |
| Output Current-Max | — | 1.7 A | — | — | — | — | — | — | — | — | — | — |
| Package Equivalence Code | — | TSSOP48,.3,20 | — | — | TSOP5/6,.11,37 | — | — | — | — | — | — | — |
| Supply Voltage-Max (Vsup) | — | 60 V | — | — | — | — | — | — | — | — | — | — |
| Supply Voltage-Min (Vsup) | — | 6 V | — | — | — | — | — | — | — | — | — | — |
| Supply Voltage-Nom (Vsup) | — | 8 V | — | — | 5 V | — | — | — | — | — | — | — |
| Temperature Grade | — | AUTOMOTIVE | — | — | AUTOMOTIVE | — | — | — | — | — | — | — |
| Terminal Pitch | — | 0.5 mm | — | 5 mm | 0.95 mm | — | — | — | — | — | — | — |
| ## DRV8303DCA Alternates Showing results | — | Image | — | — | — | — | — | — | — | — | — | — |
| Factory Lead Time | — | — | 12 Weeks | — | — | — | — | — | — | — | — | — |
| JEDEC-95 Code | — | — | TO-236AB | — | — | — | — | — | — | — | TO-220 | — |
| Qualification Status | — | — | Not Qualified | — | Not Qualified | — | — | — | — | — | — | — |
| Reach Compliance Code | — | — | — | Not Compliant | — | — | — | — | — | — | — | — |
| Capacitance | — | — | — | 330 µF | — | — | — | — | — | — | — | — |
| Capacitor Type | — | — | — | ALUMINUM ELECTROLYTIC CAPACITOR | — | — | — | — | — | — | — | — |
| Diameter | — | — | — | 12.5 mm | — | — | — | — | — | — | — | — |
| Dielectric Material | — | — | — | ALUMINUM (WET) | — | — | — | — | — | — | — | — |
| Leakage Current | — | — | — | 0.99 mA | — | — | — | — | — | — | — | — |
| Mounting Feature | — | — | — | THROUGH HOLE MOUNT | — | — | — | — | — | — | — | — |
| Negative Tolerance | — | — | — | 20% | — | — | — | — | — | — | — | — |
| Packing Method | — | — | — | BULK | TR | — | — | — | — | — | — | — |
| Polarity | — | — | — | POLARIZED | — | — | — | — | — | — | — | — |
| Positive Tolerance | — | — | — | 20% | — | — | — | — | — | — | — | — |
| Rated (DC) Voltage (URdc) | — | — | — | 100 V | — | — | — | — | — | — | — | — |
| Ripple Current | — | — | — | 540 mA | — | — | — | — | — | — | — | — |
| Tan Delta | — | — | — | 0.08 | — | — | — | — | — | — | — | — |
| Terminal Shape | — | — | — | WIRE | — | — | — | — | — | — | — | — |
| Amplifier Type | — | — | — | — | OPERATIONAL AMPLIFIER | — | — | — | — | — | — | — |
| Architecture | — | — | — | — | VOLTAGE-FEEDBACK | — | — | — | — | — | — | — |
| Average Bias Current-Max (IIB) | — | — | — | — | 0.00001 µA | — | — | — | — | — | — | — |
| Bias Current-Max (IIB) @25C | — | — | — | — | 0.00001 µA | — | — | — | — | — | — | — |
| Common-mode Reject Ratio-Min | — | — | — | — | 100 dB | — | — | — | — | — | — | — |
| Common-mode Reject Ratio-Nom | — | — | — | — | 120 dB | — | — | — | — | — | — | — |
| Frequency Compensation | — | — | — | — | YES | — | — | — | — | — | — | — |
| Input Offset Current-Max (IIO) | — | — | — | — | 0.00001 µA | — | — | — | — | — | — | — |
| Input Offset Voltage-Max | — | — | — | — | 200 µV | — | — | — | — | — | — | — |
| Low-Bias | — | — | — | — | YES | — | — | — | — | — | — | — |
| Low-Offset | — | — | — | — | YES | — | — | — | — | — | — | — |
| Micropower | — | — | — | — | NO | — | — | — | — | — | — | — |
| Power | — | — | — | — | NO | — | — | — | — | — | — | — |
| Programmable Power | — | — | — | — | NO | — | — | — | — | — | — | — |
| Slew Rate-Nom | — | — | — | — | 25 V/us | — | — | — | — | — | — | — |
| Supply Current-Max | — | — | — | — | 5 mA | — | — | — | — | — | — | — |
| Supply Voltage Limit-Max | — | — | — | — | 5.5 V | — | — | — | — | — | — | — |
| Technology | — | — | — | — | CMOS | — | — | — | — | — | — | — |
| Unity Gain BW-Nom | — | — | — | — | 50000 | — | — | — | — | — | — | — |
| Voltage Gain-Min | — | — | — | — | 50100 | — | — | — | — | — | — | — |
| Wideband | — | — | — | — | NO | — | — | — | — | — | — | — |
| ## OPA365AIDBVR Alternates Showing results | — | — | — | — | Image | — | — | — | — | — | — | — |
| ## CSD18534Q5A Alternates Showing results | — | — | — | — | — | — | — | Image | — | — | — | — |
| Date Of Intro | — | — | — | — | — | — | — | — | — | 2016-03-27 | — | 2016-03-27 |
| ## CSD18535KTTT Alternates Showing results | — | — | — | — | — | — | — | — | — | — | — | Image |
Cells highlighted in yellow indicate differing values across parts. Always verify with official datasheets before substitution.
Need pricing on these alternatives?
Get one quote covering all 11 alternatives for CSD18532Q5BT — response within 24 hours.
Quick Links
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Power Field-Effect Transistor, 100A I(D), 60V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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Why Look for Alternatives?
Finding alternatives for CSD18532Q5BT is essential for supply chain resilience. Component shortages, long lead times, and end-of-life notices can disrupt production schedules. Having verified alternative parts ensures your designs remain manufacturable.
When evaluating CSD18532Q5BT replacements, consider key parameters such as package compatibility, electrical specifications, and operating temperature range. Our engineering team can help verify pin-to-pin compatibility for your specific application.
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FAQ
What is equivalent to CSD18532Q5BT?
Known equivalents for CSD18532Q5BT include DRV8303DCA, SI2325DS-T1-E3, UVZ2A331MHD. Contact FindMyChip for a full compatibility analysis for your specific application.
Can I use a different manufacturer's part instead of CSD18532Q5BT?
In many cases, yes. Cross-manufacturer alternatives exist for most standard components. However, always verify pin compatibility, electrical specs, and package dimensions before substituting in production.
How do I verify CSD18532Q5BT alternatives?
Compare the datasheet specifications including pinout, voltage ratings, timing parameters, and package dimensions. FindMyChip's engineering team can help with compatibility verification — submit an RFQ to get started.