CSD18531Q5A Texas Instruments MOSFET (N-Channel) (Other) In Stock
CSD18531Q5A is a 60 V N-channel NexFET power MOSFET in 5 mm × 6 mm SON-8 from Texas Instruments. Key specs: 100 A continuous ID, 5.8 mΩ Rds(on) max @ Vgs=10 V, logic-level gate, avalanche-rated. From $1.40, in stock with worldwide shipping.
- Manufacturer
- Texas Instruments
- Package
- Other
- Pin Count
- 8
- Lifecycle
- ACTIVE
- Datasheet
- CSD18531Q5A Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $0.5740(MOQ 1)
- Temp Range
- -55.0°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of CSD18531Q5A?
- Ultra-low Rds(on) of 5.8 mΩ max at Vgs = 10 V (and ~7.5 mΩ at Vgs = 4.5 V) for high-current synchronous-rectifier and OR-ing applications
- 60 V VDS rating with 100 A continuous drain current and 224 mJ avalanche energy headroom for inductive switching loads
- Logic-level threshold and 4.5 V-rated gate let modern MCUs and gate drivers control the device without level shifters
- NexFET silicon technology delivers a low gate charge / low Qg × Rds(on) figure-of-merit, reducing both switching and conduction losses in 12 V/24 V converters
- 5 mm × 6 mm SON-8 (DDPAK / TO-Less style) with exposed thermal pad, AEC-Q101-style production grade, RoHS / Pb-free compliant
What is CSD18531Q5A used for?
Used in 12 V/24 V brushless-DC motor drives, e-bike and power-tool inverters, telecom/server hot-swap controllers, OR-ing FETs for redundant power supplies, and synchronous-rectifier stages of mid-power buck converters. Also fits load-switch and reverse-polarity-protection roles in 24 V industrial backplanes thanks to the 60 V drain-source rating.
What are the specifications of CSD18531Q5A?
| Pbfree Code | Yes |
| YTEOL | 15 |
| Additional Feature | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE |
| Avalanche Energy Rating (Eas) | 224mJ |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 60V |
| Drain Current-Max (ID) | 100A |
| Drain-source On Resistance-Max | 0.0058Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 14pF |
| JESD-30 Code | R-PDSO-F8 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 156W |
| Pulsed Drain Current-Max (IDM) | 300A |
| Surface Mount | YES |
| Terminal Finish | Matte Tin (Sn) |
| Terminal Form | FLAT |
| Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 1 |
| ECCN | EAR99 |
| HTS Code | 8541.29.00.95 |
Where can I find the CSD18531Q5A datasheet?
CSD18531Q5A Datasheet DownloadOfficial datasheet from Texas Instruments
What are equivalent replacements for CSD18531Q5A?
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What is the Rds(on) and gate-drive voltage of CSD18531Q5A?
CSD18531Q5A has a maximum Rds(on) of 5.8 mΩ at Vgs = 10 V and approximately 7.5 mΩ at Vgs = 4.5 V (logic level). Threshold voltage is 1.0 V to 2.5 V, so the MOSFET fully enhances with any 5 V or 3.3 V driver capable of sourcing the gate-charge current at the desired switching frequency.
Is CSD18531Q5A avalanche-rated and what is its package?
Yes. CSD18531Q5A is avalanche-rated to 224 mJ (Eas) — relevant for clamping inductor recirculation in motor and solenoid applications without an external freewheel diode. The package is a 5 mm × 6 mm 8-pin SON (Q5A footprint) with exposed thermal pad on the bottom; MSL handling is required during reflow.
Is CSD18531Q5A RoHS compliant and what is its drain-source voltage rating?
Yes, CSD18531Q5A is RoHS compliant and Pb-free. Drain-source breakdown voltage (BVDSS) is 60 V minimum, making it well-matched for 12 V to 48 V power architectures with comfortable transient headroom for inductive spikes and load-dump events.
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About Texas Instruments
Texas Instruments (TI) is a global semiconductor company headquartered in Dallas, Texas. TI designs and manufactures analog and embedded processing chips used in industrial, automotive, consumer, communications, and enterprise systems.
More from Texas Instruments
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.1589 | $1.16 |
| 5+ | $1.0500 | $5.25 |
| 9+ | $0.6685 | $6.02 |
| 1000+ | $0.6310 | $631.00 |
| 2500+ | $0.5950 | $1487.50 |
| 5000+ | $0.5740 | $2870.00 |
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