CSD18532Q5BTIn StockTexas Instruments
60V, N ch NexFET MOSFET™, single SON5x6, 3.2mOhm
- Manufacturer
- Texas Instruments
- Package
- Other
- Pin Count
- 9
- Lifecycle
- ACTIVE
- Datasheet
- CSD18532Q5BT Datasheet PDF
- Category
- MOSFET (N-Channel)
- Temp Range
- -55.0°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Specifications
| Pbfree Code | Yes |
| YTEOL | 15 |
| Additional Feature | AVALANCHE RATED |
| Avalanche Energy Rating (Eas) | 320mJ |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 60V |
| Drain Current-Max (ID) | 100A |
| Drain-source On Resistance-Max | 0.0043Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 17pF |
| JESD-30 Code | R-PDSO-N8 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 156W |
| Pulsed Drain Current-Max (IDM) | 400A |
| Surface Mount | YES |
| Terminal Finish | Matte Tin (Sn) |
| Terminal Form | NO LEAD |
| Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| ## CSD18532Q5BT Alternates Showing results | Image |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Moisture Sensitivity Level | MSL 1 |
| ECCN | EAR99 |
| HTS Code | 8541.29.00.95 |
| Country of Origin | Philippines |
Alternate & Equivalent Parts
Compatible alternatives and drop-in replacements for CSD18532Q5BT:
suggested
suggested
Power Field-Effect Transistor, 100A I(D), 60V, 0.0058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Power Field-Effect Transistor, 50A I(D), 60V, 0.0124ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Power Field-Effect Transistor, 50A I(D), 60V, 0.017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Power Field-Effect Transistor, 100A I(D), 60V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220
Frequently Asked Questions
What is the price of CSD18532Q5BT?
CSD18532Q5BT is priced from competitive USD depending on quantity. Submit an RFQ on FindMyChip for the best current pricing from authorized China distributors.
Is CSD18532Q5BT in stock?
CSD18532Q5BT is currently available at FindMyChip. We maintain stock from authorized distributors and ship worldwide with typical 3-7 business day lead time.
Where can I buy CSD18532Q5BT?
You can buy CSD18532Q5BT from FindMyChip, a B2B electronic component platform sourcing from China distributors. We offer competitive pricing and low MOQ for CSD18532Q5BT from Texas Instruments.
What is the datasheet for CSD18532Q5BT?
The official CSD18532Q5BT datasheet from Texas Instruments contains full specifications including pin configuration, electrical characteristics, and application notes. Download it directly from the datasheet section above.
What package does CSD18532Q5BT come in?
CSD18532Q5BT is available in Other packaging. See the package diagram and pinout above for detailed dimensional information.
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About Texas Instruments
Texas Instruments (TI) is a global semiconductor company headquartered in Dallas, Texas. TI designs and manufactures analog and embedded processing chips used in industrial, automotive, consumer, communications, and enterprise systems.
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