Transistor BJT NPN

Bipolar (BJT) Transistor NPN 100 V 3 A 3MHz 1.56 W Surface Mount DPAK

Use the download button to access the MJD3055T4G schematic symbol, PCB footprint, and 3D model.

HALOGEN FREE AND ROHS COMPLIANT, CASE 419B-02, SC-88, SC-70, 6 PIN

Simplifies Circuit Design; Reduces Board Space; Reduces Component Count; S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable; These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant

Use the download button to access the BF720T1G schematic symbol, PCB footprint, and 3D model.

BD677AG is a 3PIN 4W resistor by ON Semiconductor. Key specs: 3PIN, 4W, 4A. From quote-based pricing, in stock with worldwide shipping for production sourcing.

High DC Current Gain hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc; BD675, 675A, 677, 677A, 679, 679A, 681 are complementary with BD676, 676A, 678, 678A, 680, 680A, 682; Monolithic Construction; BD677, 677A, 679, 679A are equivalent to MJE 800, 801, 802, 803; Pb-Free Packages are Available

Obsolete - 15 A, 100 V NPN Darlington Bipolar Power Transistor

Use the download button to access the BCW32LT1G schematic symbol, PCB footprint, and 3D model.

Moisture Sensitivity Level: 1; ESD Rating - Human Body Model: >4000 V ESD Rating - Machine Model: >400 V; Pb-Free Packages are Available; S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

Moisture Sensitivity Level: 1; ESD Rating - Human Body Model: >4000 V ESD Rating - Machine Model: >400 V; Pb-Free Packages are Available; S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

Moisture Sensitivity Level: 1; ESD Rating - Human Body Model: >4000 V ESD Rating - Machine Model: >400 V; Pb-Free Packages are Available; S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

SC-70, SOT-323, 3 PIN

Moisture Sensitivity Level: 1; ESD Rating - Human Body Model: >4000 V ESD Rating - Machine Model: >400 V; Pb-Free Packages are Available; S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

Moisture Sensitivity Level: 1; ESD Rating - Human Body Model: >4000 V ESD Rating - Machine Model: >400 V; Pb-Free Packages are Available; S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

Moisture Sensitivity Level: 1; ESD Rating - Human Body Model: >4000 V ESD Rating - Machine Model: >400 V; S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable; These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant

Moisture Sensitivity Level: 1; ESD Rating - Human Body Model: >4000 V ESD Rating - Machine Model: >400 V; S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable; These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant

HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN

HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN

HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN

HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN

HALOGEN AND LEAD FREE, SC-63, 3/2 PIN

Use the download button to access the 2N4401G schematic symbol, PCB footprint, and 3D model.

Use the download button to access the 2N4401RLRAG schematic symbol, PCB footprint, and 3D model.

Bipolar Transistors - BJT BIP T03 NPN 15A 60V

BD135, BD137, BD139 are complementary with BD136, BD138, BD140; Mininum Current Gain - hFE = 40 @ IC = 150 mA; These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant

Minimum Gain - hFE = 63 @ IC = 150 mA; BD135, BD137, BD139 are complementary with BD136, BD138, BD140; These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

Use the download button to access the TIP141G schematic symbol, PCB footprint, and 3D model.

Monolithic Construction with Built-In Base-Emitter Shunt Resistor; High DC Current Gain Min hFE = 1000 @ IC = 5 A, VCE = 4 V; Collector-Emitter Sustaining Voltage @ 30 mA VCEO(sus) = 60 Vdc (Min) TIP140, TIP145 VCEO(sus) = 80 Vdc (Min) TIP141, TIP146 VCEO(sus) = 100 Vdc (Min) TIP142, TIP147; Pb-Free Packages are Available

Use the download button to access the BSR14 schematic symbol, PCB footprint, and 3D model.

SOT-23, 3 PIN

DMC264010R, Dual Digital Transistor, NPN 100 MA 50 V 10 kΩ, Ratio Of 1, 6-Pin Mini6 G4 B

1 A Rated Collector Current; 250 V to 400 V (Min) VCEO(sus); Popular TO-220 Plastic Package; This Device is Pb-Free and are RoHS Compliant

Compact TO-220 AB Package; Collector-Emitter Sustaining Voltage -VCEO(sus) = 60 Vdc (min) - TIP31A, TIP32A =80 Vdc (min) - TIP31B, TIP32B =100 Vdc (min) - TIP31C, TIP32C; Collector-Emitter Saturation Voltage - VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc; High Current Gain Bandwidth Product fT = 3.0 MHz (min) @ IC = 500 mAdc; Pb-Free Packages are Available

High DC Current Gain - hFE = 2500 (typ) @ IC = 4.0 mAdc; Monolithic Construction with Built-In Base-Emitter Shunt Resistors; TO-220 AB Compact Package; Collector-Emitter Sustaining Voltage--@ 30 mAdc VCEO(sus) = 60 Vdc (Min)-TIP100, TIP105 VCEO(sus) = 80 Vdc (Min)-TIP101, TIP106 VCEO(sus) = 100 Vdc (Min)-TIP102, TIP107; Low Collector-Emitter Saturation Voltage VCE(sat) = 2.0 Vdc (Max) @ IC= 3.0 Adc VCE(sat)= 2.5 Vdc (Max) @ IC= 8.0 Adc; Pb-Free Packages are Available

TO-3, 2 PIN

These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant; S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

DC Current Gain Specified to 10 Amperes; High Current Gain - Bandwidth Product - fT = 2.0 MHz (Min) @ IC fT = 500 mAdc; Pb-Free Packages are Available

Collector-Emitter Sustaining Voltage VCEO(sus) = 250 Vdc (Min) MJE15032, MJE15033; High Current Gain Bandwidth Product fT = 30 MHz (Min) @ IC = 500 mAdc; DC Current Gain Specified to 5.0 Amperes hFE = 50 (Min) @ IC = 0.5 Adc hFE = 10 (Min) @ IC = 2.0 Adc; TO-220AB Compact Package; Pb-Free Packages are Available*

For Low Distortion Complementary Designs; High Safe Operating Area (100% Tested) - 5.0 A @ 50 V; High DC Current Gain - hFE = 25 (Min) @ IC = 5 Adc

High Safe Operating Area (100% Tested) - 2 A @ 80 V; High DC Current Gain - hFE = 15 (Min) @ IC = 8 Adc

DC Current Gain Specified to 4.0 Amperes hFE = 40 (Min) @ IC = 3.0 Adc hFE = 20 (Min) @ IC = 4.0 Adc; TO-220AB Compact Package; Collector-Emitter Sustaining Voltage - VCEO(sus) = 120 Vdc (Min) MJE15028, MJE15029 VCEO(sus) = 150 Vdc (Min) - MJE15030, MJE15031; High Current Gain - Bandwidth Product fT = 30 MHz (Min) @ IC = 500 mAdc; Pb-Free Packages are Available

Fall time = 0.3 ms (typ) at IC = 1.0 A; VCES(sus) 1000 V; VCEO(sus) 450 V; VCE(sat) = 1.0 V (max) at IC = 1.0 A, IB = 0.2 A; Pb-Free Package is Available

Obsolete - 15 A, 80 V PNP Darlington Bipolar Power Transistor

BD135, BD137, BD139 are complementary with BD136, BD138, BD140; Minimum DC Current Gain - hFE = 40 @ IC = 0.15 A; These are Pb-Free Devices

CASE 340D-02, 3 PIN

Last Shipments - PNP Epitaxial Silicon Transistor

TO-92, 3 PIN

Use the download button to access the BC547CG schematic symbol, PCB footprint, and 3D model.

LEAD FREE, CASE 29-11, TO-226, 3 PIN