MMSS8050-L-TP Micro Commercial Components (MCC) Transistor BJT NPN (SOT23 (3-Pin)) In Stock
MCC MMSS8050-L-TP is a single NPN bipolar junction transistor in a 3-pin SOT23 package, rated for 25V collector-emitter voltage, 1.5A collector current, and minimum hFE of 120. Suitable for general-purpose switching and amplification. Available in stock with worldwide shipping.
- Manufacturer
- Micro Commercial Components (MCC)
- Package
- SOT23 (3-Pin)
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- MMSS8050-L-TP Datasheet PDF
- Category
- Transistor BJT NPN
- Temp Range
- ?°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 1.5A collector current and 25V VCE rating in a compact 3-pin SOT23 package for medium-power switching applications
- Minimum DC current gain (hFE) of 120 enabling efficient small-signal amplification and low-base-drive transistor switching
- RoHS and lead-free (JESD-609 e3) compliant plastic SOT23 package compatible with standard SMT reflow assembly processes
Applications
The MMSS8050-L-TP is widely used as a general-purpose NPN switching transistor in LED driver circuits, relay actuators, motor control signal stages, and low-side load switches operating at up to 25V and 1.5A. Its high hFE of 120 or greater allows microcontroller GPIO pins to drive base current efficiently, enabling reliable saturation switching with minimal drive current. The compact SOT23 package is suitable for space-constrained consumer electronics, IoT sensor nodes, and industrial control boards requiring surface-mount NPN transistors.
Specifications
| Pbfree Code | Yes |
| YTEOL | 7 |
| Collector Current-Max (IC) | 1.5A |
| Collector-Emitter Voltage-Max | 25V |
| Configuration | SINGLE |
| DC Current Gain-Min (hFE) | 120 |
| JESD-30 Code | R-PDSO-G3 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | NPN |
| Power Dissipation-Max (Abs) | 0.3W |
| Qualification Status | Not Qualified |
| Surface Mount | YES |
| Terminal Finish | Matte Tin (Sn) |
| Terminal Form | GULL WING |
| Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | 10 |
| Transistor Element Material | SILICON |
| Transition Frequency-Nom (fT) | 100MHz |
| Package | SOT23 (3-Pin) |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 1 |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Alternate & Equivalent Parts
Compatible alternatives and drop-in replacements for MMSS8050-L-TP:
Frequently Asked Questions
What are the key voltage and current ratings of the MMSS8050-L-TP NPN transistor?
The MMSS8050-L-TP is rated for a maximum collector-emitter voltage of 25V and a maximum collector current of 1.5A. With a minimum DC current gain (hFE) of 120, it requires only about 12mA of base drive current to fully saturate at 1.5A collector current, making it easy to drive from a 3.3V or 5V microcontroller GPIO pin through a 270Ω series base resistor.
For driving a 12V relay coil drawing 100mA, does the MMSS8050-L-TP provide adequate switching performance?
Yes. A 12V relay coil drawing 100mA is well within the MMSS8050-L-TP's 25V and 1.5A ratings. With hFE ≥ 120, only approximately 1mA of base current is needed to switch the transistor into saturation, which any 3.3V GPIO pin can supply through a 2.2kΩ series base resistor while keeping the GPIO current below its 8mA source limit.
How does the SOT23 package of the MMSS8050-L-TP simplify PCB layout compared to TO-92 through-hole alternatives?
The MMSS8050-L-TP SOT23 package occupies only about 3mm x 1.5mm of PCB area, roughly 5 times smaller than a TO-92 through-hole transistor. This allows placement in tight SMT designs near microcontrollers or connectors, and supports automated pick-and-place assembly, eliminating the need for through-hole drilled pads and reducing PCB layer stackup complexity.
When should an engineer choose the MMSS8050-L-TP over a MOSFET for a low-side switching application?
The MMSS8050-L-TP BJT is preferred over a MOSFET when the load current is below 1A, the supply voltage is under 25V, and the design priority is low cost and simplicity rather than minimal drive power. BJTs like the MMSS8050-L-TP are also better for audio amplifier bias stages or analog signal switching where the linear-region operating characteristics of an NPN transistor with hFE ≥ 120 are exploited.
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