MOSFET (N-Channel)

Vishay IRFL210TRPBF N-channel MOSFET Transistor, 0.96 A, 200 V, 3-Pin SOT-223

Vishay IRFL014TRPBF N-channel MOSFET Transistor, 2.7 A, 60 V, 3-Pin SOT-223

Use the download button to access the IRFI620GPBF schematic symbol, PCB footprint, and 3D model.

Use the download button to access the IRFI510GPBF schematic symbol, PCB footprint, and 3D model.

Use the download button to access the IRFDC20PBF schematic symbol, PCB footprint, and 3D model.

Use the download button to access the IRF730APBF schematic symbol, PCB footprint, and 3D model.

Panasonic MTM232230LBF N-channel MOSFET Transistor, 4.5 A, 20 V Depletion, 3-Pin SMini3-G1-B

SC-85, 3 PIN

Panasonic DSK5J01P0L N-channel JFET Transistor, Idss 1 → 3mA, 3-Pin SMini3 F2 B

MOSFET MOSFET BVDSS: 8V-24V  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability

N-Channel Enhancement MOSFET SOT-23 Diodes Inc DMG2302U-7 N-channel MOSFET Transistor, 4.2 A, 20 V, 3-Pin SOT-23

Infineon BSS138NH6327XTSA2 N-channel MOSFET, 230 mA, 60 V SIPMOS, 3-Pin SOT-23

RF Mosfet 15 V 400MHz SOT-23-3

Use the download button to access the IRFB3077PBF schematic symbol, PCB footprint, and 3D model.

Use the download button to access the IPP020N08N5AKSA1 schematic symbol, PCB footprint, and 3D model.

TO-220, 3 PIN

Use the download button to access the IRLIZ34NPBF schematic symbol, PCB footprint, and 3D model.

Use the download button to access the IRFB3306PBF schematic symbol, PCB footprint, and 3D model.

GREEN, PLASTIC, TDSON-8

Use the download button to access the DMN2004DWK-7 schematic symbol, PCB footprint, and 3D model.

Use the download button to access the SSM6L61NU,LF schematic symbol, PCB footprint, and 3D model.

Use the download button to access the IRFP250NPBF schematic symbol, PCB footprint, and 3D model.

SOP-8

SOT-23, 3 PIN

VISHAY - SI2302CDS-T1-E3 - MOSFET Transistor, N Channel, 2.6 A, 20 V, 0.045 ohm, 4.5 V, 400 mV

SOT-23, 3 PIN

N-Channel MOSFET, 21 mA, 600 V, 3-Pin SOT-23 Infineon BSS127H6327XTSA2

GREEN, PLASTIC, SC-59, 3 PIN

GREEN, PLASTIC, 3 PIN

SOP-8

DMN4027SSD-13 from Diodes Inc. is a dual N-channel MOSFET in an 8-pin SOIC package, rated 40 V drain-source voltage and 5.4 A continuous drain current with on-resistance as low as 27 mΩ. It integrates two independent FETs with built-in diodes for compact load-switch and motor-drive designs. Available from global distributors with competitive pricing and short lead times.

Infineon IRFL4310TRPBF is a single N-channel power MOSFET rated at 100 V drain-source breakdown voltage and 1.6 A maximum drain current with 0.2 Ω on-resistance in a SOT-223 3-pin package. Suitable for high-reliability switching and load management. RoHS-compliant and available in tape-and-reel with worldwide shipping.

International Rectifier IRFL4310PBF is an N-channel power MOSFET rated at 100 V and 2.2 A in a compact SOT-223 surface-mount package, featuring an on-resistance of 0.2 Ω maximum. Built-in body diode and high-reliability construction make it suitable for switching and load management applications. Available worldwide through authorized distributors with fast shipping.

Infineon IPU80R1K4P7AKMA1 is a superjunction N-channel MOSFET in IPAK-3 package rated at 800 V breakdown and 4 A drain current, featuring 1.4 Ω on-resistance with built-in body diode for efficient switching in high-voltage power conversion circuits.

MOSFET N-ch 30V 0.1A 8Ohm SC-75-3 ROHM 2SK3019TL N-channel MOSFET Transistor, 0.1 A, 30 V, 3-Pin EMT

ROHM Semiconductor RTR040N03TL is an N-channel MOSFET with 30V drain-source breakdown voltage and 4A maximum drain current in a compact SOT-23 3-pin package. Its 66 mΩ on-resistance and built-in diode make it efficient for low-power switching. Available worldwide with fast shipping.

2.5V Drive Nch MOSFET: Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

Toshiba RFM12U7X(TE12L,Q) is an N-channel power MOSFET in a compact PW-X package designed for efficient switching in DC-DC converters and motor drive circuits. It offers low on-resistance and fast switching characteristics suitable for mobile and consumer electronics power management. Available from authorized distributors with worldwide shipping.

Infineon AUIRFP4568 is a single N-channel power MOSFET rated at 150 V drain-source breakdown voltage and 171 A maximum drain current with ultra-low on-resistance of 5.9 mΩ in a TO-247 package. Available worldwide with fast shipping.

Panasonic MTM232270LBF is an N-channel MOSFET in a 3-pin SMini3-G1-B package, rated at 20 V drain-source breakdown voltage and 2 A maximum drain current with a built-in diode configuration. Suitable for low-voltage switching and load control applications in compact SMD designs, available with worldwide shipping.

Infineon IPAW60R190CEXKSA1 is a 600V N-channel CoolMOS MOSFET with 26.7A drain current, 0.19Ω on-resistance, and 418mJ avalanche energy rating in a 3-pin TO-220FP isolated package for high-efficiency power conversion.

Infineon IPD320N20N3GATMA1 is an N-channel power MOSFET rated at 200 V drain-source breakdown voltage with 34 A maximum drain current and ultra-low 32 mΩ on-resistance in a TO-252 (DPAK) 3-pin package. Features a built-in body diode and 190 mJ avalanche energy rating for robust motor and switching applications; available from stock with worldwide shipping.

ON Semiconductor FCP125N60E is a 600 V, 29 A N-channel power MOSFET with 0.125 Ω RDS(on) and built-in body diode in a TO-220AB 3-pin package. Features 720 mJ avalanche energy rating for rugged PFC and switching power supply designs. From $2.20 in stock with worldwide shipping.

Cree C2M0045170D is a 1700 V, 75 A silicon carbide (SiC) N-channel MOSFET with 45 mΩ max on-resistance and integrated body diode, packaged in TO-247 for high-efficiency power conversion. Key specs: 1700 V VDS, 75 A ID, 45 mΩ RDS(on). Available in stock with worldwide shipping.

Use the download button to access the DMN2400UV-7 schematic symbol, PCB footprint, and 3D model.

GREEN, PLASTIC PACKAGE-3

Use the download button to access the DMN601TK-7 schematic symbol, PCB footprint, and 3D model.

Use the download button to access the IRLML2502TRPBF schematic symbol, PCB footprint, and 3D model.

SIHU5N50D-GE3 is a Vishay MOSFET (N-Channel) for load switching, amplification, level shifting, and discrete power stages. It combines 0°C to 0°C with Transistor Outline, Vertical with 3 pins. FindMyChip supports technical sourcing, stock checks, and worldwide shipping for this part.

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